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1. 发明申请

US20090235036A1 PHASE-CHANGE RANDOM ACCESS MEMORY AND METHOD OF SETTING BOOT BLOCK THEREIN 有权
标题翻译：相变随机访问存储器和设置引导块的方法
公开(公告)号：US20090235036A1
公开(公告)日：2009-09-17
申请号：US12402006
申请日：2009-03-11
申请人： Yu-hwan RO , Kwang-ho Kim , Kwang-jin Lee , Joon-yong Choi
发明人： Yu-hwan RO , Kwang-ho Kim , Kwang-jin Lee , Joon-yong Choi
IPC分类号： G06F12/16 , G06F12/00 , G06F12/02
CPC分类号： G06F12/0238 , G06F12/0223 , Y02D10/13
摘要： A semiconductor memory device includes a memory cell array and the memory cell array includes: a plurality of memory blocks and at least one setting unit. The at least one setting unit stores a location and a size of a boot data storage region within the plurality of memory blocks that stores boot data. The at least one setting units may include a register for setting usage of each memory block as a boot block. The semiconductor device may be a phase-change memory.
摘要翻译：半导体存储器件包括存储单元阵列，存储单元阵列包括：多个存储块和至少一个设置单元。所述至少一个设置单元将存储引导数据的多个存储块内的引导数据存储区域的位置和大小存储起来。至少一个设置单元可以包括用于将每个存储器块的使用设置为引导块的寄存器。半导体器件可以是相变存储器。

2. 发明授权

US08250289B2 Phase-change random access memory and method of setting boot block therein 有权
标题翻译：相变随机存取存储器及其中设置引导块的方法
公开(公告)号：US08250289B2
公开(公告)日：2012-08-21
申请号：US12402006
申请日：2009-03-11
申请人： Yu-hwan Ro , Kwang-ho Kim , Kwang-jin Lee , Joon-yong Choi
发明人： Yu-hwan Ro , Kwang-ho Kim , Kwang-jin Lee , Joon-yong Choi
IPC分类号： G06F12/00 , G06F12/02
CPC分类号： G06F12/0238 , G06F12/0223 , Y02D10/13
摘要： A semiconductor memory device includes a memory cell array and the memory cell array includes: a plurality of memory blocks and at least one setting unit. The at least one setting unit stores a location and a size of a boot data storage region within the plurality of memory blocks that stores boot data. The at least one setting units may include a register for setting usage of each memory block as a boot block. The semiconductor device may be a phase-change memory.
摘要翻译：半导体存储器件包括存储单元阵列，存储单元阵列包括：多个存储块和至少一个设置单元。所述至少一个设置单元将存储引导数据的多个存储块内的引导数据存储区域的位置和大小存储起来。至少一个设置单元可以包括用于将每个存储器块的使用设置为引导块的寄存器。半导体器件可以是相变存储器。

3. 发明授权

US07499306B2 Phase-change memory device and method that maintains the resistance of a phase-change material in a set state within a constant resistance range 有权
标题翻译：相变存储器件和方法，其将相变材料的电阻保持在恒定电阻范围内的置位状态
公开(公告)号：US07499306B2
公开(公告)日：2009-03-03
申请号：US11772569
申请日：2007-07-02
申请人： Byung-gil Choi , Choong-keun Kwak , Sang-beom Kang , Joon-yong Choi
发明人： Byung-gil Choi , Choong-keun Kwak , Sang-beom Kang , Joon-yong Choi
IPC分类号： G11C11/00
CPC分类号： G11C7/1006 , G11C13/0004 , G11C13/0069 , G11C2013/0076 , G11C2211/5647
摘要： Provided are a phase-change memory device and method that maintains a resistance of a phase-change material in a set state within a constant resistance range. In the method, data is provided to a first phase-change memory cell and then it is first determined whether data stored in the first phase-change memory cell and the data provided to the first phase-change memory cell are identical. If the data stored in the first phase-change memory cell and the data provided to the first phase-change memory cell are not identical, a complementary write current is provided to the first phase-change memory cell and it is second determined whether the data stored in the first phase-change memory cell and the data provided to the first phase-change memory cell are identical. If the data stored in the first phase-change memory cell and the data provided to the first phase-change memory cell are identical, data is provided to a second phase-change memory cell.
摘要翻译：提供一种将相变材料的电阻维持在恒定电阻范围内的置换状态的相变存储器件和方法。在该方法中，将数据提供给第一相变存储器单元，然后首先确定存储在第一相变存储单元中的数据和提供给第一相变存储单元的数据是否相同。如果存储在第一相变存储单元中的数据和提供给第一相变存储单元的数据不相同，则向第一相变存储单元提供互补写入电流，并且第二相位变换存储单元是否将数据存储在第一相变存储单元中，提供给第一相变存储单元的数据相同。如果存储在第一相变存储单元中的数据和提供给第一相变存储单元的数据相同，则将数据提供给第二相变存储单元。

4. 发明申请

US20080013362A1 PHASE-CHANGE MEMORY DEVICE AND METHOD THAT MAINTAINS THE RESISTANCE OF A PHASE-CHANGE MATERIAL IN A SET STATE WITHIN A CONSTANT RESISTANCE RANGE 有权
标题翻译：相变存储器件和在恒定电阻范围内保持相变材料在电阻状态下的电阻的方法
公开(公告)号：US20080013362A1
公开(公告)日：2008-01-17
申请号：US11772569
申请日：2007-07-02
申请人： Byung-gil Choi , Choong-keun Kwak , Sang-beom Kang , Joon-yong Choi
发明人： Byung-gil Choi , Choong-keun Kwak , Sang-beom Kang , Joon-yong Choi
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C7/1006 , G11C13/0004 , G11C13/0069 , G11C2013/0076 , G11C2211/5647
摘要： Provided are a phase-change memory device and method that maintains a resistance of a phase-change material in a set state within a constant resistance range; In the method, data is provided to a first phase-change memory cell and then it is first determined whether data stored in the first phase-change memory cell and the data provided to the first phase-change memory cell are identical. If the data stored in the first phase-change memory cell and the data provided to the first phase-change memory cell are not identical, a complementary write current is provided to the first phase-change memory cell and it is second determined whether the data stored in the first phase-change memory cell and the data provided to the first phase-change memory cell are identical; If the data stored in the first phase-change memory cell and the data provided to the first phase-change memory cell are identical, data is provided to a second phase-change memory cell;
摘要翻译：提供一种将相变材料的电阻维持在恒定电阻范围内的相变存储器件和方法，在该方法中，将数据提供给第一相变存储器单元，然后首先确定存储在第一相变存储单元中的数据和提供给第一相变存储单元的数据是否相同。如果存储在第一相变存储单元中的数据和提供给第一相变存储单元的数据不相同，则向第一相变存储单元提供互补写入电流，并且第二相位变换存储单元是否将数据存储在第一相变存储单元中，提供给第一相变存储单元的数据相同; 如果存储在第一相变存储单元中的数据和提供给第一相变存储单元的数据相同，则将数据提供给第二相变存储单元;

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