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11. 发明申请

US20130043632A1 RAPID THERMAL PROCESSING CHAMBER WITH MICRO-POSITIONING SYSTEM 有权
公开(公告)号：US20130043632A1
公开(公告)日：2013-02-21
申请号：US13656150
申请日：2012-10-19
申请人： Khurshed Sorabji , Joseph M. Ranish , Wolfgang Aderhold , Aaron M. Hunter , Blake R. Koelmel , Alexander N. Lemer , Nir Merry
发明人： Khurshed Sorabji , Joseph M. Ranish , Wolfgang Aderhold , Aaron M. Hunter , Blake R. Koelmel , Alexander N. Lemer , Nir Merry
IPC分类号： B23Q1/25
CPC分类号： H01L21/67259 , C23C16/46 , H01L21/324 , H01L21/67115 , H01L21/68 , H01L21/681 , H01L21/6835 , H01L21/68742
摘要： Methods and apparatus for rapid thermal processing of a planar substrate including axially aligning the substrate with a substrate support or with an empirically determined position are described. The methods and apparatus include a sensor system that determines the relative orientations of the substrate and the substrate support.

12. 发明申请

US20130043235A1 RAPID THERMAL PROCESSING CHAMBER WITH MICRO-POSITIONING SYSTEM 有权
标题翻译：具有微定位系统的快速热处理室
公开(公告)号：US20130043235A1
公开(公告)日：2013-02-21
申请号：US13656158
申请日：2012-10-19
申请人： Khurshed Sorabji , Joseph M. Ranish , Wolfgang Aderhold , Aaron M. Hunter , Blake R. Koelmel , Alexander N. Lerner , Nir Merry
发明人： Khurshed Sorabji , Joseph M. Ranish , Wolfgang Aderhold , Aaron M. Hunter , Blake R. Koelmel , Alexander N. Lerner , Nir Merry
IPC分类号： F27D11/00
CPC分类号： H01L21/67259 , C23C16/46 , H01L21/324 , H01L21/67115 , H01L21/68 , H01L21/681 , H01L21/6835 , H01L21/68742
摘要： Methods and apparatus for rapid thermal processing of a planar substrate including axially aligning the substrate with a substrate support or with an empirically determined position are described. The methods and apparatus include a sensor system that determines the relative orientations of the substrate and the substrate support.
摘要翻译：描述了包括将衬底轴向对准衬底支撑件或经验确定的位置的用于快速热处理平面衬底的方法和装置。所述方法和装置包括确定衬底和衬底支撑件的相对取向的传感器系统。

13. 发明授权

US08109669B2 Temperature uniformity measurement during thermal processing 有权
标题翻译：热处理期间的温度均匀性测量
公开(公告)号：US08109669B2
公开(公告)日：2012-02-07
申请号：US12273842
申请日：2008-11-19
申请人： Wolfgang Aderhold , Jallepally Ravi , Balasubramanian Ramachandran , Aaron M. Hunter , Ilias Iliopoulos
发明人： Wolfgang Aderhold , Jallepally Ravi , Balasubramanian Ramachandran , Aaron M. Hunter , Ilias Iliopoulos
IPC分类号： H01L21/66 , H01L21/324
CPC分类号： G01J5/0003 , G01J5/0007 , G01J5/08 , G01J5/0846 , G01J2005/0081
摘要： Methods and systems for determining a radial differential metrology profile of a substrate heated in a process chamber is provided. Methods and systems for determining an angular or azimuthal differential metrology profile of a rotating substrate in a processing chamber are also provided. The radial and azimuthal differential metrology profiles are applied to adjust a reference metrology profile to provide a Virtual metrology of the process chamber. The virtual metrology is applied to control the performance of the process chamber.
摘要翻译：提供了用于确定在处理室中加热的衬底的径向微分计量学轮廓的方法和系统。还提供了用于确定处理室中的旋转衬底的角度或方位差分测量轮廓的方法和系统。应用径向和方位角微分计量分析来调整参考计量学概况，以提供处理室的虚拟计量。应用虚拟计量来控制处理室的性能。

14. 发明授权

US08111978B2 Rapid thermal processing chamber with shower head 有权
标题翻译：带淋浴头的快速热处理室
公开(公告)号：US08111978B2
公开(公告)日：2012-02-07
申请号：US12171994
申请日：2008-07-11
申请人： Khurshed Sorabji , Joseph Michael Ranish , Wolfgang Aderhold , Aaron Muir Hunter , Alexander N. Lerner
发明人： Khurshed Sorabji , Joseph Michael Ranish , Wolfgang Aderhold , Aaron Muir Hunter , Alexander N. Lerner
IPC分类号： A21B2/00
CPC分类号： H01L21/67109 , C23C16/4404 , C23C16/45512 , C23C16/45565 , C23C16/4557 , C23C16/45572 , C23C16/4584 , C23C16/481 , F27B17/0025 , H01L21/67098 , H01L21/67115 , H01L21/67167 , H01L21/67207
摘要： Apparatus and methods for thermally processing a substrate are provided. A chamber containing a levitating support assembly configured to position the substrate at different distances from a plate during the heating and cooling of a substrate. In one embodiment a plurality of openings on the surface of the plate are configured to evenly distribute gas across a radial surface of the substrate. The distribution of gas may couple radiant energy not reflected back to the substrate during thermal processing with an absorptive region of the plate to begin the cooling of the substrate. The method and apparatus provided within allows for a controllable and effective means for thermally processing a substrate rapidly.
摘要翻译：提供了用于热处理基板的设备和方法。包含悬浮支撑组件的腔室，其构造成在衬底的加热和冷却期间将衬底定位在与板不同的距离处。在一个实施例中，板的表面上的多个开口构造成均匀地分布气体穿过衬底的径向表面。气体的分布可以在热处理期间将与反射回衬底的辐射能耦合到板的吸收区域以开始冷却衬底。所提供的方法和装置允许用于快速热处理基板的可控和有效的装置。

15. 发明申请

US20100008656A1 RAPID THERMAL PROCESSING CHAMBER WITH SHOWER HEAD 有权
标题翻译：具有淋浴头的快速热处理室
公开(公告)号：US20100008656A1
公开(公告)日：2010-01-14
申请号：US12171994
申请日：2008-07-11
申请人： KHURSHED SORABJI , Joseph Michael Ranish , Wolfgang Aderhold , Aaron Muir Hunter , Alexander N. Lerner
发明人： KHURSHED SORABJI , Joseph Michael Ranish , Wolfgang Aderhold , Aaron Muir Hunter , Alexander N. Lerner
IPC分类号： F26B19/00 , F26B3/28 , F21V7/00
CPC分类号： H01L21/67109 , C23C16/4404 , C23C16/45512 , C23C16/45565 , C23C16/4557 , C23C16/45572 , C23C16/4584 , C23C16/481 , F27B17/0025 , H01L21/67098 , H01L21/67115 , H01L21/67167 , H01L21/67207
摘要： Apparatus and methods for thermally processing a substrate are provided. A chamber containing a levitating support assembly configured to position the substrate at different distances from a plate during the heating and cooling of a substrate. In one embodiment a plurality of openings on the surface of the plate are configured to evenly distribute gas across a radial surface of the substrate. The distribution of gas may couple radiant energy not reflected back to the substrate during thermal processing with an absorptive region of the plate to begin the cooling of the substrate. The method and apparatus provided within allows for a controllable and effective means for thermally processing a substrate rapidly.
摘要翻译：提供了用于热处理基板的设备和方法。包含悬浮支撑组件的腔室，其构造成在衬底的加热和冷却期间将衬底定位在与板不同的距离处。在一个实施例中，板的表面上的多个开口构造成均匀地分布气体穿过衬底的径向表面。气体的分布可以在热处理期间将具有未反射回衬底的辐射能量与板的吸收区域耦合以开始冷却衬底。所提供的方法和装置允许用于快速热处理基板的可控和有效的装置。

16. 发明申请

US20070215049A1 Transfer of wafers with edge grip 审中-公开
标题翻译：转移晶圆与边缘抓地力
公开(公告)号：US20070215049A1
公开(公告)日：2007-09-20
申请号：US11375709
申请日：2006-03-14
申请人： Wolfgang Aderhold , Teresa Trowbridge
发明人： Wolfgang Aderhold , Teresa Trowbridge
IPC分类号： B32B3/02 , C23C16/00
CPC分类号： H01L21/68707 , H01L21/67115 , Y10T428/21
摘要： Three wafer support fixtures transfer a wafer for thermal processing in an inverted orientation within a heating chamber. Two co-planar support fixtures grab the wafer edge inside the chamber from a blade within a 1.5 mm wafer exclusion zone and hold it above the edge ring during heat-up and then withdraw thermal processing. A third support fixture chucks the wafer backside and transfers it to sloping support areas of the edge ring. The three support fixtures inside the chamber are individually controlled from outside. Alternatively, an arm connected to a controller is connected to the three support fixtures
摘要翻译：三个晶片支撑固定装置在加热室内以反向取向转移用于热处理的晶片。两个共面支撑固定装置从1.5mm晶圆排除区域内的叶片抓住室内的晶片边缘，并在加热期间将其保持在边缘环上方，然后退回热处理。第三支撑夹具夹住晶片背面并将其转移到边缘环的倾斜支撑区域。室内的三个支撑固定装置从外部单独控制。或者，连接到控制器的臂连接到三个支撑固定装置

17. 发明授权

US08314371B2 Rapid thermal processing chamber with micro-positioning system 有权
标题翻译：具有微型定位系统的快速热处理室
公开(公告)号：US08314371B2
公开(公告)日：2012-11-20
申请号：US12611958
申请日：2009-11-04
申请人： Khurshed Sorabji , Joseph M. Ranish , Wolfgang Aderhold , Aaron M. Hunter , Blake R. Koelmel , Alexander N. Lerner , Nir Merry
发明人： Khurshed Sorabji , Joseph M. Ranish , Wolfgang Aderhold , Aaron M. Hunter , Blake R. Koelmel , Alexander N. Lerner , Nir Merry
IPC分类号： H01B1/00
CPC分类号： H01L21/67259 , C23C16/46 , H01L21/324 , H01L21/67115 , H01L21/68 , H01L21/681 , H01L21/6835 , H01L21/68742
摘要： Methods and apparatus for rapid thermal processing of a planar substrate including axially aligning the substrate with a substrate support or with an empirically determined position are described. The methods and apparatus include a sensor system that determines the relative orientations of the substrate and the substrate support.
摘要翻译：描述了包括将衬底轴向对准衬底支撑件或经验确定的位置的用于快速热处理平面衬底的方法和装置。所述方法和装置包括确定衬底和衬底支撑件的相对取向的传感器系统。

18. 发明申请

US20070010033A1 Method and system for deposition tuning in an epitaxial film growth apparatus 失效
公开(公告)号：US20070010033A1
公开(公告)日：2007-01-11
申请号：US11178973
申请日：2005-07-11
申请人： Wolfgang Aderhold , Ali Zojaji
发明人： Wolfgang Aderhold , Ali Zojaji
IPC分类号： H01L21/66 , H01L21/20
CPC分类号： C23C16/52 , C30B23/02 , C30B25/02 , C30B25/165 , Y10T117/10
摘要： A method of calculating a process parameter for a deposition of an epitaxial layer on a substrate. The method includes the steps of measuring an effect of the process parameter on a thickness of the epitaxial layer to determine a gain curve for the process parameter, and calculating, using the gain curve, a value for the process parameter to achieve a target thickness of the epitaxial layer. The value is calculated to minimize deviations from the target thickness in the layer. Also, a substrate processing system comprising that includes a processor to calculate a value for the process parameter to achieve a substantially uniform epitaxial layer of a target thickness on the substrate, where the value is calculated using a gain curve derived from measurements of layer uniformity as a function of the value of the process parameter.

19. 发明授权

US5343293A Ellipsometer 失效
标题翻译：椭圆计
公开(公告)号：US5343293A
公开(公告)日：1994-08-30
申请号：US940903
申请日：1992-10-23
申请人： Rudolf Berger , Heiner Ryssel , Claus Schneider , Wolfgang Aderhold
发明人： Rudolf Berger , Heiner Ryssel , Claus Schneider , Wolfgang Aderhold
IPC分类号： G01B11/06 , G01N21/21 , H01L21/205 , H01L21/66 , G01B11/00
CPC分类号： G01B11/065
摘要： An ellipsometer, used in particular for measuring the thickness of oxide films on silicon wafers inside an oven, comprising an analyzer unit (3), a beam deflection device, a paddle and a ploarizer unit (2). In order to increase the measurement precision, the ellipsometer is designed so that the beam deflection device comprises two prisms (6, 9), the prisms (6,9), the analyzer unit (3) and the polarizer unit (2) are mounted on the paddle (11), and two tubes (4, 10) are provided for guiding the beam from the polarizer unit (2) to the first prism (6) and from the second prism (9) to the analyzer unit (3) .
摘要翻译： PCT No.PCT / DE91 / 00345 Sec。 371日期：1992年10月23日 102（e）日期1992年10月23日PCT 1991年4月24日提交PCT公布。 WO91 / 16600 PCT出版物日期：1991年10月31日。一种椭圆光度计，特别用于测量烘箱内硅晶片上的氧化膜的厚度，包括分析器单元（3），光束偏转装置，桨叶和扩散器单元（2）。为了提高测量精度，椭圆光度计被设计成使得光束偏转装置包括两个棱镜（6,9），棱镜（6,9），分析器单元（3）和偏振器单元（2）被安装在所述桨叶（11）上设置有两个管（4,10），用于将所述光束从所述偏振器单元（2）引导到所述第一棱镜（6）并且从所述第二棱镜（9）引导到所述分析器单元（3）。

20. 发明授权

US09640412B2 Apparatus and method for enhancing the cool down of radiatively heated substrates 有权
公开(公告)号：US09640412B2
公开(公告)日：2017-05-02
申请号：US12622736
申请日：2009-11-20
申请人： Wolfgang Aderhold , Joseph M. Ranish , Blake R. Koelmel
发明人： Wolfgang Aderhold , Joseph M. Ranish , Blake R. Koelmel
IPC分类号： A21B2/00 , H01L21/324 , H01L21/67
CPC分类号： H01L21/324 , H01L21/67109 , H01L21/67115
摘要： The present invention generally relates to methods and apparatus for processing substrates. Embodiments of the invention include apparatuses for processing a substrate comprising a dynamic heat sink that is substantially transparent to light from a radiant heat source, the dynamic heat sink being positioned near the substrate so the two are coupled. Additional embodiments of the invention are directed to methods of processing a substrate using the apparatuses described.

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