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1. 发明申请

US20070010033A1 Method and system for deposition tuning in an epitaxial film growth apparatus 失效
公开(公告)号：US20070010033A1
公开(公告)日：2007-01-11
申请号：US11178973
申请日：2005-07-11
申请人： Wolfgang Aderhold , Ali Zojaji
发明人： Wolfgang Aderhold , Ali Zojaji
IPC分类号： H01L21/66 , H01L21/20
CPC分类号： C23C16/52 , C30B23/02 , C30B25/02 , C30B25/165 , Y10T117/10
摘要： A method of calculating a process parameter for a deposition of an epitaxial layer on a substrate. The method includes the steps of measuring an effect of the process parameter on a thickness of the epitaxial layer to determine a gain curve for the process parameter, and calculating, using the gain curve, a value for the process parameter to achieve a target thickness of the epitaxial layer. The value is calculated to minimize deviations from the target thickness in the layer. Also, a substrate processing system comprising that includes a processor to calculate a value for the process parameter to achieve a substantially uniform epitaxial layer of a target thickness on the substrate, where the value is calculated using a gain curve derived from measurements of layer uniformity as a function of the value of the process parameter.

2. 发明申请

US20070128780A1 METHOD AND SYSTEM FOR DEPOSITION TUNING IN AN EPITAXIAL FILM GROWTH APPARATUS 审中-公开
标题翻译：一种外来膜生长装置沉积调节方法与系统
公开(公告)号：US20070128780A1
公开(公告)日：2007-06-07
申请号：US11671375
申请日：2007-02-05
申请人： Wolfgang Aderhold , Ali Zojaji
发明人： Wolfgang Aderhold , Ali Zojaji
IPC分类号： H01L21/338 , C30B11/00
CPC分类号： C23C16/52 , C30B23/02 , C30B25/02 , C30B25/165 , Y10T117/10
摘要： A method of calculating a process parameter for a deposition of an epitaxial layer on a substrate. The method includes the steps of measuring an effect of the process parameter on a thickness of the epitaxial layer to determine a gain curve for the process parameter, and calculating, using the gain curve, a value for the process parameter to achieve a target thickness of the epitaxial layer. The value is calculated to minimize deviations from the target thickness in the layer. Also, a substrate processing system comprising that includes a processor to calculate a value for the process parameter to achieve a substantially uniform epitaxial layer of a target thickness on the substrate, where the value is calculated using a gain curve derived from measurements of layer uniformity as a function of the value of the process parameter.
摘要翻译：计算用于在衬底上沉积外延层的工艺参数的方法。该方法包括以下步骤：测量工艺参数对外延层的厚度的影响，以确定工艺参数的增益曲线，以及使用增益曲线计算工艺参数的值以实现目标厚度外延层。计算该值以最小化与层中目标厚度的偏差。而且，一种衬底处理系统，包括一个处理器，用于计算工艺参数的值，以在衬底上实现目标厚度的基本上均匀的外延层，其中使用从均匀度测量得到的增益曲线来计算该值过程参数值的函数。

3. 发明授权

US07651948B2 Pre-cleaning of substrates in epitaxy chambers 有权
标题翻译：在外延室中预清洗底物
公开(公告)号：US07651948B2
公开(公告)日：2010-01-26
申请号：US11480134
申请日：2006-06-30
申请人： Yihwan Kim , Jean R. Vatus , Lori D. Washington , Arkadii Samoilov , Ali Zojaji
发明人： Yihwan Kim , Jean R. Vatus , Lori D. Washington , Arkadii Samoilov , Ali Zojaji
IPC分类号： H01L21/302
CPC分类号： C23C16/0236 , C30B25/02 , C30B29/52
摘要： A method for processing a substrate including a pre-cleaning etch and reduced pressure process is disclosed. The pre-cleaning process involves introducing a substrate into a processing chamber; flowing an etching gas into the processing chamber; processing at least a portion of the substrate with the etching gas to remove a contaminated or damaged layer from a substrate surface; stopping flow of the etching gas; evacuating the processing chamber to achieve a reduced pressure in the chamber; and processing the substrate surface at the reduced pressure. Epitaxial deposition is then used to form an epitaxial layer on the substrate surface.
摘要翻译：公开了一种用于处理包括预清洗蚀刻和减压工艺的衬底的方法。预清洗过程包括将衬底引入处理室; 使蚀刻气体流入处理室; 用蚀刻气体处理至少一部分基板以从基板表面去除污染或损坏的层; 停止蚀刻气体的流动; 排空处理室以在室中实现减压; 并在减压下处理衬底表面。然后使用外延沉积在衬底表面上形成外延层。

4. 发明申请

US20070256627A1 METHOD OF ULTRA-SHALLOW JUNCTION FORMATION USING SI FILM ALLOYED WITH CARBON 有权
标题翻译：使用与碳合金制成的超薄结块形成方法
公开(公告)号：US20070256627A1
公开(公告)日：2007-11-08
申请号：US11742932
申请日：2007-05-01
申请人： YIHWAN KIM , Majeed Foad , Yonah Cho , Zhiyuan Ye , Ali Zojaji , Errol Sanchez
发明人： YIHWAN KIM , Majeed Foad , Yonah Cho , Zhiyuan Ye , Ali Zojaji , Errol Sanchez
IPC分类号： C30B23/00 , C23C16/00 , B05D3/02 , C30B25/00
CPC分类号： H01L29/7848 , H01L21/02378 , H01L21/02381 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02664 , H01L21/2233 , H01L21/26513 , H01L29/165 , H01L29/66287 , H01L29/6656 , H01L29/66628 , H01L29/66636
摘要： A method for forming an ultra shallow junction on a substrate is provided. In certain embodiments a method of forming an ultra shallow junction on a substrate is provided. The substrate is placed into a process chamber. A silicon carbon layer is deposited on the substrate. The silicon carbon layer is exposed to a dopant. The substrate is heated to a temperature greater than 950° C. so as to cause substantial annealing of the dopant within the silicon carbon layer. In certain embodiments the substrate is heated to a temperature between about 1000° C. and about 1100°. In certain embodiments the substrate is heated to a temperature between about 1030° C. and 1050° C. In certain embodiments, a structure having an abrupt p-n junction is provided.
摘要翻译：提供了一种在基板上形成超浅结的方法。在某些实施例中，提供了在衬底上形成超浅结的方法。将基底放置在处理室中。硅基层沉积在基底上。硅碳层暴露于掺杂剂。将基板加热至大于950℃的温度，以使硅碳层内的掺杂剂发生实际退火。在某些实施方案中，将基材加热至约1000℃至约1100℃之间的温度。在某些实施方案中，将衬底加热至约1030℃至1050℃之间的温度。在某些实施方案中，提供具有突变p-n结的结构。

5. 发明申请

US20060115933A1 Use of CL2 and/or HCL during silicon epitaxial film formation 有权
标题翻译：在硅外延膜形成期间使用CL2和/或HCL
公开(公告)号：US20060115933A1
公开(公告)日：2006-06-01
申请号：US11227974
申请日：2005-09-14
申请人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas Dalida , Jinsong Tang , Xiao Chen , Arkadii Samoilov
发明人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas Dalida , Jinsong Tang , Xiao Chen , Arkadii Samoilov
IPC分类号： H01L21/332 , H01L21/336
CPC分类号： H01L21/02639 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： In a first aspect, a first method of forming an epitaxial film on a substrate is provided. The first method includes (a) providing a substrate; (b) exposing the substrate to at least a silicon source so as to form an epitaxial film on at least a portion of the substrate; and (c) exposing the substrate to HCl and Cl2 so as to etch the epitaxial film and any other films formed during step (b). Numerous other aspects are provided.
摘要翻译：在第一方面，提供了在基板上形成外延膜的第一种方法。第一种方法包括（a）提供基底; （b）将所述衬底暴露于至少硅源，以在所述衬底的至少一部分上形成外延膜; 和（c）将衬底暴露于HCl和Cl2，以蚀刻外延膜和在步骤（b）中形成的任何其它膜。提供了许多其他方面。

6. 发明授权

US08445389B2 Etchant treatment processes for substrate surfaces and chamber surfaces 有权
标题翻译：底物表面和室表面的蚀刻处理工艺
公开(公告)号：US08445389B2
公开(公告)日：2013-05-21
申请号：US13346503
申请日：2012-01-09
申请人： Ali Zojaji , Arkadii V. Samoilov
发明人： Ali Zojaji , Arkadii V. Samoilov
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/02019 , B08B7/0035 , H01L21/02046 , H01L21/02057 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/02658 , H01L21/3065 , H01L21/823425 , H01L21/823807 , H01L21/823814
摘要： Embodiments of the invention generally relate to methods for treating a silicon-containing material on a substrate surface and performing a chamber clean process. In one embodiment, a method includes positioning a substrate containing a silicon material having a contaminant thereon within a process chamber and exposing the substrate to an etching gas containing chlorine gas and a silicon source gas while removing the contaminant and maintaining a temperature of the substrate within a range from about 500° C. to less than about 800° C. during an etching process. The method further includes exposing the substrate to a deposition gas after the etching process during a deposition process and exposing the process chamber to a chamber clean gas containing chlorine gas and the silicon source gas after the deposition process during a chamber clean process. The chamber clean process limits the etching of quartz and metal surfaces within the process chamber.
摘要翻译：本发明的实施方案一般涉及在基材表面处理含硅材料并进行室清洁工艺的方法。在一个实施例中，一种方法包括将含有其上具有污染物的硅材料的衬底定位在处理室内，并将衬底暴露于含有氯气和硅源气体的蚀刻气体，同时除去污染物并保持衬底的温度在蚀刻过程中约500℃至小于约800℃的范围。该方法还包括在沉积工艺期间在蚀刻工艺之后将衬底暴露于沉积气体，并且在室清洁过程中在沉积过程之后将处理室暴露于含有氯气的室清洁气体和沉积工艺之后的硅源气体。室清洁过程限制了处理室内的石英和金属表面的蚀刻。

7. 发明授权

US07960256B2 Use of CL2 and/or HCL during silicon epitaxial film formation 有权
标题翻译：在硅外延膜形成期间使用CL2和/或HCL
公开(公告)号：US07960256B2
公开(公告)日：2011-06-14
申请号：US12779022
申请日：2010-05-12
申请人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
发明人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02639 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
摘要翻译：在第一方面中，提供了在基板上形成外延膜的方法。该方法包括（a）提供衬底; （b）将衬底暴露于硅源和碳源以形成含碳硅外延膜; （c）用封装膜封装含碳硅外延膜; 和（d）将衬底暴露于Cl2以蚀刻封装膜。提供了许多其他方面。

8. 发明申请

US20100221902A1 USE OF CL2 AND/OR HCL DURING SILICON EPITAXIAL FILM FORMATION 有权
标题翻译：在硅胶膜形成过程中使用CL2和/或HCL
公开(公告)号：US20100221902A1
公开(公告)日：2010-09-02
申请号：US12779022
申请日：2010-05-12
申请人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
发明人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
IPC分类号： H01L21/20
CPC分类号： H01L21/02639 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
摘要翻译：在第一方面中，提供了在基板上形成外延膜的方法。该方法包括（a）提供衬底; （b）将衬底暴露于硅源和碳源以形成含碳硅外延膜; （c）用封装膜封装含碳硅外延膜; 和（d）将衬底暴露于Cl2以蚀刻封装膜。提供了许多其他方面。

9. 发明申请

US20060260538A1 Use of Cl2 and/or HCl during silicon epitaxial film formation 有权
标题翻译：在硅外延膜形成期间使用Cl2和/或HCl
公开(公告)号：US20060260538A1
公开(公告)日：2006-11-23
申请号：US11494903
申请日：2006-07-28
申请人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas Dalida , Jinsong Tang , Xiao Chen , Arkadii Samoilov
发明人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas Dalida , Jinsong Tang , Xiao Chen , Arkadii Samoilov
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L21/02639 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
摘要翻译：在第一方面中，提供了在基板上形成外延膜的方法。该方法包括（a）提供衬底; （b）将衬底暴露于硅源和碳源以形成含碳硅外延膜; （c）用封装膜封装含碳硅外延膜; 和（d）将衬底暴露于Cl2以蚀刻封装膜。提供了许多其他方面。

10. 发明申请

US20120103263A1 PRE-HEAT RING DESIGNS TO INCREASE DEPOSITION UNIFORMITY AND SUBSTRATE THROUGHPUT 有权
标题翻译：预热环设计增加沉积物的均匀性和基底
公开(公告)号：US20120103263A1
公开(公告)日：2012-05-03
申请号：US13250906
申请日：2011-09-30
申请人： NYI O. MYO , John S. Webb , Masato Ishii , Xuebin Li , Zhiyuan Ye , Ali Zojaji
发明人： NYI O. MYO , John S. Webb , Masato Ishii , Xuebin Li , Zhiyuan Ye , Ali Zojaji
IPC分类号： C23C16/455 , C23C16/458
CPC分类号： C23C16/45591 , C23C16/45502 , C23C16/4584 , C23C16/4585 , H01L21/67386 , H01L21/687 , H01L21/68792
摘要： Embodiments of the present invention generally relates to apparatus for use in film depositions. The apparatus generally include pre-heat rings adapted to be positioned in a processing chamber. In one embodiment, a pre-heat ring includes a ring having an inner edge and an outer edge. The outer edge has a constant radius. The inner edge is oblong-shaped and may have a first portion having a constant radius measured from a center of a circle defined by an outer circumference of the ring. A second portion may have a constant radius measured from a location other than the center of the outer circumference. In another embodiment, a processing chamber includes a pre-heat ring positioned around the periphery of a substrate support. The pre-heat ring includes an inner edge having a first portion, a second portion, and one or more linear portions positioned between the first portion and the second portion.
摘要翻译：本发明的实施例一般涉及用于膜沉积的装置。该设备通常包括适于定位在处理室中的预热环。在一个实施例中，预热环包括具有内边缘和外边缘的环。外边缘具有恒定的半径。内边缘是长圆形的，并且可以具有从由环的外圆周限定的圆的中心测量的具有恒定半径的第一部分。第二部分可以具有从除了外圆周的中心之外的位置测量的恒定的半径。在另一个实施例中，处理室包括围绕衬底支撑件的周边定位的预热环。预热环包括具有第一部分，第二部分和位于第一部分和第二部分之间的一个或多个直线部分的内边缘。

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