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11. 发明授权

US08314371B2 Rapid thermal processing chamber with micro-positioning system 有权
标题翻译：具有微型定位系统的快速热处理室
公开(公告)号：US08314371B2
公开(公告)日：2012-11-20
申请号：US12611958
申请日：2009-11-04
申请人： Khurshed Sorabji , Joseph M. Ranish , Wolfgang Aderhold , Aaron M. Hunter , Blake R. Koelmel , Alexander N. Lerner , Nir Merry
发明人： Khurshed Sorabji , Joseph M. Ranish , Wolfgang Aderhold , Aaron M. Hunter , Blake R. Koelmel , Alexander N. Lerner , Nir Merry
IPC分类号： H01B1/00
CPC分类号： H01L21/67259 , C23C16/46 , H01L21/324 , H01L21/67115 , H01L21/68 , H01L21/681 , H01L21/6835 , H01L21/68742
摘要： Methods and apparatus for rapid thermal processing of a planar substrate including axially aligning the substrate with a substrate support or with an empirically determined position are described. The methods and apparatus include a sensor system that determines the relative orientations of the substrate and the substrate support.
摘要翻译：描述了包括将衬底轴向对准衬底支撑件或经验确定的位置的用于快速热处理平面衬底的方法和装置。所述方法和装置包括确定衬底和衬底支撑件的相对取向的传感器系统。

12. 发明申请

US20090041443A1 Backside Rapid Thermal Processing of Patterned Wafers 审中-公开
标题翻译：背面快速热处理图案化的晶圆
公开(公告)号：US20090041443A1
公开(公告)日：2009-02-12
申请号：US12193439
申请日：2008-08-18
申请人： Wolfgang Aderhold , Sundar Ramamurthy , Aaron Hunter
发明人： Wolfgang Aderhold , Sundar Ramamurthy , Aaron Hunter
IPC分类号： F26B19/00
CPC分类号： H01L21/67115 , F27B17/0025 , F27D19/00 , F27D21/0014
摘要： Apparatus and methods of thermally treating a wafer or other substrate, such as rapid thermal processing (RTP) apparatus and methods are disclosed. An array of radiant lamps directs radiation to the back side of a wafer to heat the wafer. In one or more embodiments, the front side of the wafer on which the patterned integrated circuits are being formed faces a radiant reflector. In one or more embodiments, the wafer is thermally monitored for temperature and reflectivity from the side of the reflector.
摘要翻译：公开了诸如快速热处理（RTP）装置和方法的晶片或其它基板的热处理的装置和方法。辐射灯阵列将辐射引导到晶片的背面以加热晶片。在一个或多个实施例中，其上形成图案化集成电路的晶片的正面面向辐射反射器。在一个或多个实施例中，从反射器一侧热温度地监测晶片的温度和反射率。

13. 发明申请

US20070010033A1 Method and system for deposition tuning in an epitaxial film growth apparatus 失效
公开(公告)号：US20070010033A1
公开(公告)日：2007-01-11
申请号：US11178973
申请日：2005-07-11
申请人： Wolfgang Aderhold , Ali Zojaji
发明人： Wolfgang Aderhold , Ali Zojaji
IPC分类号： H01L21/66 , H01L21/20
CPC分类号： C23C16/52 , C30B23/02 , C30B25/02 , C30B25/165 , Y10T117/10
摘要： A method of calculating a process parameter for a deposition of an epitaxial layer on a substrate. The method includes the steps of measuring an effect of the process parameter on a thickness of the epitaxial layer to determine a gain curve for the process parameter, and calculating, using the gain curve, a value for the process parameter to achieve a target thickness of the epitaxial layer. The value is calculated to minimize deviations from the target thickness in the layer. Also, a substrate processing system comprising that includes a processor to calculate a value for the process parameter to achieve a substantially uniform epitaxial layer of a target thickness on the substrate, where the value is calculated using a gain curve derived from measurements of layer uniformity as a function of the value of the process parameter.

14. 发明授权

US5343293A Ellipsometer 失效
标题翻译：椭圆计
公开(公告)号：US5343293A
公开(公告)日：1994-08-30
申请号：US940903
申请日：1992-10-23
申请人： Rudolf Berger , Heiner Ryssel , Claus Schneider , Wolfgang Aderhold
发明人： Rudolf Berger , Heiner Ryssel , Claus Schneider , Wolfgang Aderhold
IPC分类号： G01B11/06 , G01N21/21 , H01L21/205 , H01L21/66 , G01B11/00
CPC分类号： G01B11/065
摘要： An ellipsometer, used in particular for measuring the thickness of oxide films on silicon wafers inside an oven, comprising an analyzer unit (3), a beam deflection device, a paddle and a ploarizer unit (2). In order to increase the measurement precision, the ellipsometer is designed so that the beam deflection device comprises two prisms (6, 9), the prisms (6,9), the analyzer unit (3) and the polarizer unit (2) are mounted on the paddle (11), and two tubes (4, 10) are provided for guiding the beam from the polarizer unit (2) to the first prism (6) and from the second prism (9) to the analyzer unit (3) .
摘要翻译： PCT No.PCT / DE91 / 00345 Sec。 371日期：1992年10月23日 102（e）日期1992年10月23日PCT 1991年4月24日提交PCT公布。 WO91 / 16600 PCT出版物日期：1991年10月31日。一种椭圆光度计，特别用于测量烘箱内硅晶片上的氧化膜的厚度，包括分析器单元（3），光束偏转装置，桨叶和扩散器单元（2）。为了提高测量精度，椭圆光度计被设计成使得光束偏转装置包括两个棱镜（6,9），棱镜（6,9），分析器单元（3）和偏振器单元（2）被安装在所述桨叶（11）上设置有两个管（4,10），用于将所述光束从所述偏振器单元（2）引导到所述第一棱镜（6）并且从所述第二棱镜（9）引导到所述分析器单元（3）。

15. 发明授权

US09640412B2 Apparatus and method for enhancing the cool down of radiatively heated substrates 有权
公开(公告)号：US09640412B2
公开(公告)日：2017-05-02
申请号：US12622736
申请日：2009-11-20
申请人： Wolfgang Aderhold , Joseph M. Ranish , Blake R. Koelmel
发明人： Wolfgang Aderhold , Joseph M. Ranish , Blake R. Koelmel
IPC分类号： A21B2/00 , H01L21/324 , H01L21/67
CPC分类号： H01L21/324 , H01L21/67109 , H01L21/67115
摘要： The present invention generally relates to methods and apparatus for processing substrates. Embodiments of the invention include apparatuses for processing a substrate comprising a dynamic heat sink that is substantially transparent to light from a radiant heat source, the dynamic heat sink being positioned near the substrate so the two are coupled. Additional embodiments of the invention are directed to methods of processing a substrate using the apparatuses described.

16. 发明授权

US08104951B2 Temperature uniformity measurements during rapid thermal processing 有权
标题翻译：快速热处理期间的温度均匀性测量
公开(公告)号：US08104951B2
公开(公告)日：2012-01-31
申请号：US11830845
申请日：2007-07-30
申请人： Wolfgang Aderhold , Andreas G. Hegedus , Nir Merry
发明人： Wolfgang Aderhold , Andreas G. Hegedus , Nir Merry
IPC分类号： G01K3/06 , G01N25/00 , G01J5/00 , H01L21/02
CPC分类号： G01J5/0022 , G01J2005/0081
摘要： Methods and apparatus for measuring substrate uniformity is provided. The invention includes placing a substrate in a thermal processing chamber, rotating the substrate while the substrate is heated, measuring a temperature of the substrate at a plurality of radial locations as the substrate rotates, correlating each temperature measurement with a location on the substrate, and generating a temperature contour map for the substrate based on the correlated temperature measurements. Numerous other aspects are provided.
摘要翻译：提供了测量基板均匀性的方法和装置。本发明包括将衬底放置在热处理室中，在衬底被加热的同时旋转衬底，在衬底旋转时在多个径向位置测量衬底的温度，使每个温度测量与衬底上的位置相关，以及基于相关的温度测量产生用于衬底的温度轮廓图。提供了许多其他方面。

17. 发明申请

US20080090393A1 ULTRA SHALLOW JUNCTION WITH RAPID THERMAL ANNEAL 审中-公开
标题翻译：超快速热连接的超声波接头
公开(公告)号：US20080090393A1
公开(公告)日：2008-04-17
申请号：US11867748
申请日：2007-10-05
申请人： Wolfgang Aderhold , Susan Felch
发明人： Wolfgang Aderhold , Susan Felch
IPC分类号： H01L21/265
CPC分类号： H01L21/26506 , H01L21/26513 , H01L21/324 , H01L29/6659 , H01L29/7833
摘要： Embodiments of the invention generally provide a method for forming an ultra shallow junction in a semiconductor device. In one embodiment, the method includes providing a silicon containing layer disposed on a substrate, implanting carbon and an elemental dopant into the silicon containing layer on the substrate, and annealing the implanted silicon containing layer. In another embodiment, the method includes providing a silicon containing layer on a substrate, implanting carbon and an elemental dopant into the silicon containing layer to form source and drain regions on the substrate, annealing the silicon containing layer, and forming an ultra shallow junction between the source and drain regions on the substrate having a junction depth less than 20 nm.
摘要翻译：本发明的实施例通常提供了一种在半导体器件中形成超浅结的方法。在一个实施例中，该方法包括提供设置在衬底上的含硅层，将碳和元素掺杂剂注入到衬底上的含硅层中，以及退火注入的含硅层。在另一个实施方案中，该方法包括在衬底上提供含硅层，将碳和元素掺杂剂注入到含硅层中，以在衬底上形成源区和漏区，退火含硅层，以及在含硅层之间形成超浅结衬底上的源极和漏极区域的结深度小于20nm。

18. 发明申请

US20050191044A1 Backside rapid thermal processing of patterned wafers 有权
标题翻译：图案化晶片的背面快速热处理
公开(公告)号：US20050191044A1
公开(公告)日：2005-09-01
申请号：US10788979
申请日：2004-02-27
申请人： Wolfgang Aderhold , Sundar Ramamurthy , Aaron Hunter
发明人： Wolfgang Aderhold , Sundar Ramamurthy , Aaron Hunter
IPC分类号： F26B19/00 , F27B5/14 , F27B17/00 , F27D11/00 , F27D19/00 , F27D21/00 , H01L21/00
CPC分类号： H01L21/67115 , F27B17/0025 , F27D19/00 , F27D21/0014
摘要： A apparatus and method of thermally treating a wafer or other substrate, such as rapid thermal processing (RTP). An array of radiant lamps directs radiation to the back side of a wafer to heat the wafer. The front side of the wafer on which the patterned integrated circuits are being formed faces a radiant reflector. The wafer is thermally monitored for temperature and reflectivity from the side of the reflector. When the lamps are above the wafer, an edge ring supports the wafer in its edge exclusion zone. Alternatively, a reactor includes upwardly directed lamps and a reflector above and facing the front side of the wafer.
摘要翻译：热处理晶片或其它基板的设备和方法，例如快速热处理（RTP）。辐射灯阵列将辐射引导到晶片的背面以加热晶片。其上形成图案化集成电路的晶片的正面面向辐射反射器。对来自反射器侧的温度和反射率进行热监测晶片。当灯在晶片之上时，边缘环在其边缘排除区域中支撑晶片。或者，反应器包括向上定向的灯和在晶片的正面上方并面向晶片前侧的反射器。

19. 发明授权

US06803546B1 Thermally processing a substrate 失效
标题翻译：热处理基材
公开(公告)号：US06803546B1
公开(公告)日：2004-10-12
申请号：US09611349
申请日：2000-07-06
申请人： Ryan C Boas , Ajit Balakrishna , Benjamin Bierman , Brian L Haas , Dean Jennings , Wolfgang Aderhold , Sundar Ramamurthy , Abhilash Mayur
发明人： Ryan C Boas , Ajit Balakrishna , Benjamin Bierman , Brian L Haas , Dean Jennings , Wolfgang Aderhold , Sundar Ramamurthy , Abhilash Mayur
IPC分类号： F27B514
CPC分类号： C30B25/10 , C30B31/12 , H01L21/67109 , H01L21/67115 , H01L21/67248
摘要： A thermal processing method is described in which a temperature response of a substrate may be controlled during a heat-up phase or a cool-down phase, or during both phases. This reduces the thermal budget of the substrate and improves the quality and performance of devices formed on the substrate. In particular, by controlling the rate of heat transfer between the substrate and a thermal reservoir (e.g., a water-cooled reflector plate assembly), the temperature response of the substrate may be controlled during the thermal process. The rate of heat transfer may be changed by changing the thermal conductivity between the substrate and the thermal reservoir, by changing the emissivity of a surface of the thermal reservoir, or by changing the distance between the substrate and the thermal reservoir.
摘要翻译：描述了一种热处理方法，其中可以在加热阶段或冷却阶段期间或在两个阶段期间控制衬底的温度响应。这降低了基板的热预算，并改善了在基板上形成的器件的质量和性能。特别地，通过控制基板和热储存器（例如，水冷反射板组件）之间的热传递速率，可以在热处理期间控制基板的温度响应。可以通过改变基底和热储层之间的热导率，改变热储层表面的发射率，或通过改变基底和热储层之间的距离来改变传热速率。

20. 发明授权

US08658945B2 Backside rapid thermal processing of patterned wafers 有权
标题翻译：图案化晶片的背面快速热处理
公开(公告)号：US08658945B2
公开(公告)日：2014-02-25
申请号：US10788979
申请日：2004-02-27
申请人： Wolfgang Aderhold , Sundar Ramamurthy , Aaron Hunter
发明人： Wolfgang Aderhold , Sundar Ramamurthy , Aaron Hunter
IPC分类号： F27B5/14 , C23C16/00
CPC分类号： H01L21/67115 , F27B17/0025 , F27D19/00 , F27D21/0014
摘要： A apparatus and method of thermally treating a wafer or other substrate, such as rapid thermal processing (RTP). An array of radiant lamps directs radiation to the back side of a wafer to heat the wafer. The front side of the wafer on which the patterned integrated circuits are being formed faces a radiant reflector. The wafer is thermally monitored for temperature and reflectivity from the side of the reflector. When the lamps are above the wafer, an edge ring supports the wafer in its edge exclusion zone. Alternatively, a reactor includes upwardly directed lamps and a reflector above and facing the front side of the wafer.
摘要翻译：热处理晶片或其它基板的设备和方法，例如快速热处理（RTP）。辐射灯阵列将辐射引导到晶片的背面以加热晶片。其上形成图案化集成电路的晶片的正面面向辐射反射器。对来自反射器侧的温度和反射率进行热监测晶片。当灯在晶片之上时，边缘环在其边缘排除区域中支撑晶片。或者，反应器包括向上定向的灯和在晶片的正面上方并面向晶片前侧的反射器。

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