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11. 发明授权

US07771618B2 Liquid crystal material and optical compensated bend mode liquid crystal display 有权
标题翻译：液晶材料和光学补偿弯曲模式液晶显示
公开(公告)号：US07771618B2
公开(公告)日：2010-08-10
申请号：US12331432
申请日：2008-12-10
申请人： Hong-Cheu Lin , Ling-Yung Wang , Hsin-Yi Tsai , Chieh-Yin Tang , Chi-Neng Mo , Shau-Lin Lyu
发明人： Hong-Cheu Lin , Ling-Yung Wang , Hsin-Yi Tsai , Chieh-Yin Tang , Chi-Neng Mo , Shau-Lin Lyu
IPC分类号： C09K19/20 , C09K19/34 , C09K19/30 , G02F1/1333
CPC分类号： C09K19/2007 , C09K19/3444 , C09K19/348 , C09K19/3491 , C09K19/3497 , C09K2019/0481 , G02F1/1395
摘要： A liquid crystal material including an optical compensated bend mode liquid crystal molecule and a bend molecule is provided. The bend molecule has a structure presented as formula (1): In formula (1), the symbol A represents one of the following formulas: The symbol L represents hydrogen or fluorine, and the value r is one, two, three, four, five, six, seven or eight. Besides, the symbol X represents carboxyl group or cyano group. The symbol B represents one of the following formulas: The symbol L represents hydrogen or fluorine, and the value r is one, two, three, four, five, six, seven or eight. The symbol C represents alkyl, alkoxyl, alkylcarbonyl or alkoxycarbonyl group with 1 to 12 carbon atoms.
摘要翻译：提供了包括光学补偿弯曲模式液晶分子和弯曲分子的液晶材料。弯曲分子具有如式（1）所示的结构：在式（1）中，符号A表示下式之一：符号L表示氢或氟，值r为1，2，3，4，五六，七八。此外，符号X表示羧基或氰基。符号B表示下列公式之一：符号L表示氢或氟，值r为1,2,3,4,5,6,7或8。符号C表示具有1至12个碳原子的烷基，烷氧基，烷基羰基或烷氧基羰基。

12. 发明授权

US06746970B2 Method of forming a fluorocarbon polymer film on a substrate using a passivation layer 有权
标题翻译：使用钝化层在基板上形成碳氟聚合物膜的方法
公开(公告)号：US06746970B2
公开(公告)日：2004-06-08
申请号：US10178795
申请日：2002-06-24
申请人： Ming-Chung Liang , Chung Tai Chen , Hsin-Yi Tsai
发明人： Ming-Chung Liang , Chung Tai Chen , Hsin-Yi Tsai
IPC分类号： H01L2131
CPC分类号： B05D1/62 , B05D3/142 , B05D5/083
摘要： A passivation layer is deposited onto the surface of a substrate followed by deposition of a polymer layer, through the application of a plasma enhanced chemical vapor deposition process, in which the substrate is placed on a chuck within a reaction chamber and fluorocarbon gas is introduced into the reaction chamber under the influence of at least one plasma source. The fluorocarbon gas can be a CFX gas. The at least one plasma source can include a first plasma source that ionizes the fluorocarbon gas by applying RF plasma energy, and a second plasma source that applies a near-zero self-bias to the substrate at an RF frequency during deposition of the passivation layer and a greater bias during deposition of the polymer layer. The passivation layer is deposited prior to the polymer layer to protect the surface of the substrate from damage during the deposition of the polymer layer.
摘要翻译：通过施加等离子体增强化学气相沉积工艺将钝化层沉积在基底的表面上，随后沉积聚合物层，其中将基底放置在反应室内的卡盘上，将碳氟化合物气体引入反应室在至少一个等离子体源的影响下。碳氟化合物气体可以是CFX气体。所述至少一个等离子体源可以包括通过施加RF等离子体能量使碳氟化合物气体电离的第一等离子体源和在钝化层沉积期间以RF频率向衬底施加近零自偏压的第二等离子体源并且在沉积聚合物层期间具有较大的偏压。在聚合物层之前沉积钝化层以保护基材的表面免于在聚合物层沉积期间的损坏。

13. 发明授权

US09496217B2 Method and apparatus of forming a via 有权
标题翻译：形成通孔的方法和装置
公开(公告)号：US09496217B2
公开(公告)日：2016-11-15
申请号：US12478619
申请日：2009-06-04
申请人： Hsin-Yi Tsai , Chih-Hao Chen , Ming-Chung Liang , Chii-Ping Chen , Lai Chien Wen , Yuh-Jier Mii
发明人： Hsin-Yi Tsai , Chih-Hao Chen , Ming-Chung Liang , Chii-Ping Chen , Lai Chien Wen , Yuh-Jier Mii
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L23/5226 , H01L21/76804 , H01L21/76811 , H01L21/76813 , H01L21/76816 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： The present disclosure provides a semiconductor device that includes, a substrate; a first conductive line located over the substrate and extending along a first axis, the first conductive line having a first length and a first width, the first length being measured along the first axis; a second conductive line located over the first conductive line and extending along a second axis different from the first axis, the second conductive line having a second length and a second width, the second length being measured along the second axis; and a via coupling the first and second conductive lines, the via having an upper surface that contacts the second conductive line and a lower surface that contacts the first conductive line. The via has an approximately straight edge at the upper surface, the straight edge extending along the second axis and being substantially aligned with the second conductive line.
摘要翻译：本公开提供一种半导体器件，其包括：衬底; 第一导电线，位于所述衬底上并且沿着第一轴线延伸，所述第一导电线具有第一长度和第一宽度，所述第一长度沿着所述第一轴线被测量; 第二导电线，位于第一导电线之上并沿着不同于第一轴的第二轴延伸，第二导线具有第二长度和第二宽度，第二长度沿第二轴线测量; 以及耦合所述第一和第二导线的通孔，所述通孔具有接触所述第二导电线的上表面和接触所述第一导线的下表面。通孔在上表面具有大致直边，直边沿第二轴线延伸并与第二导线基本对准。

14. 发明授权

US08222151B2 Double patterning strategy for contact hole and trench in photolithography 有权
标题翻译：光刻中接触孔和沟槽的双重图案化策略
公开(公告)号：US08222151B2
公开(公告)日：2012-07-17
申请号：US13185067
申请日：2011-07-18
申请人： Ming-Chung Liang , Chih-Hao Chen , Yu-Yu Chen , Hsin-Yi Tsai
发明人： Ming-Chung Liang , Chih-Hao Chen , Yu-Yu Chen , Hsin-Yi Tsai
IPC分类号： H01L21/311
CPC分类号： H01L21/31144 , H01L21/0338 , H01L21/76808 , H01L21/76813 , H01L21/76816
摘要： A method of lithography patterning includes forming a hard mask layer on a material layer and forming a capping layer on the hard mask layer. The capping layer does not react with oxygen gas during a photoresist ashing process. The capping layer is patterned by using a first resist pattern and a second resist pattern as etch masks. After the capping layer is patterned, the hard mask layer is patterned by using the patterned capping layer as an etch mask.
摘要翻译：光刻图案的方法包括在材料层上形成硬掩模层，并在硬掩模层上形成覆盖层。在光刻胶灰化过程中，封盖层不与氧气反应。通过使用第一抗蚀剂图案和第二抗蚀剂图案作为蚀刻掩模来对覆盖层进行图案化。在图案化覆盖层之后，通过使用图案化覆盖层作为蚀刻掩模来对硬掩模层进行图案化。

15. 发明授权

US08105947B2 Post etch dielectric film re-capping layer 有权
标题翻译：后蚀刻介质膜覆盖层
公开(公告)号：US08105947B2
公开(公告)日：2012-01-31
申请号：US12547232
申请日：2009-08-25
申请人： Shwang-Ming Jeng , Kin-Weng Wang , Hsin-Yi Tsai , Keng-Chu Lin , Chung-Chi Ko
发明人： Shwang-Ming Jeng , Kin-Weng Wang , Hsin-Yi Tsai , Keng-Chu Lin , Chung-Chi Ko
IPC分类号： H01L21/302 , H01L21/311 , H01L21/31
CPC分类号： H01L21/31144 , H01L21/76808 , H01L2221/1063
摘要： Methods for improving post etch in via or trench formation in semiconductor devices. A preferred embodiment comprises forming a re-capping layer over a dielectric film following an initial etch to form a feature in the dielectric film, followed by additional etch and etch back processing steps. The re-capping method provides protection for underlying films and prevents film damage post etch. Uniform feature profiles are maintained and critical dimension uniformity is obtained by use of the methods of the invention. The time dependent dielectric breakdown performance is increased.
摘要翻译：用于改善半导体器件中的通孔或沟槽形成中的后蚀刻的方法。优选实施例包括在初始蚀刻之后在电介质膜上形成覆盖层，以在电介质膜中形成特征，随后进行另外的蚀刻和回蚀处理步骤。重新覆盖方法为底层膜提供保护，并防止蚀刻后的膜损伤。通过使用本发明的方法维持均匀的特征轮廓并获得临界尺寸均匀性。时间依赖介电击穿性能提高。

16. 发明授权

US08008206B2 Double patterning strategy for contact hole and trench in photolithography 有权
标题翻译：光刻中接触孔和沟槽的双重图案化策略
公开(公告)号：US08008206B2
公开(公告)日：2011-08-30
申请号：US12873429
申请日：2010-09-01
申请人： Ming-Chung Liang , Chih-Hao Chen , Yu-Yu Chen , Hsin-Yi Tsai
发明人： Ming-Chung Liang , Chih-Hao Chen , Yu-Yu Chen , Hsin-Yi Tsai
IPC分类号： H01L21/311
CPC分类号： H01L21/31144 , H01L21/0338 , H01L21/76808 , H01L21/76813 , H01L21/76816
摘要： A method of lithography patterning includes forming a hard mask layer on a material layer and forming a capping layer on the hard mask layer. The capping layer does not react with oxygen gas during a photoresist ashing process. The capping layer is patterned by using a first resist pattern and a second resist pattern as etch masks. After the capping layer is patterned, the hard mask layer is patterned by using the patterned capping layer as an etch mask.
摘要翻译：光刻图案的方法包括在材料层上形成硬掩模层，并在硬掩模层上形成覆盖层。在光刻胶灰化过程中，封盖层不与氧气反应。通过使用第一抗蚀剂图案和第二抗蚀剂图案作为蚀刻掩模来对覆盖层进行图案化。在图案化覆盖层之后，通过使用图案化覆盖层作为蚀刻掩模来对硬掩模层进行图案化。

17. 发明申请

US20110076845A1 Method Of Forming An Interconnect Of A Semiconductor Device 有权
标题翻译：形成半导体器件互连的方法
公开(公告)号：US20110076845A1
公开(公告)日：2011-03-31
申请号：US12569146
申请日：2009-09-29
申请人： Hsin-Yi Tsai , Yu-Yu Chen
发明人： Hsin-Yi Tsai , Yu-Yu Chen
IPC分类号： H01L21/768 , G03F7/20
CPC分类号： H01L21/7681 , H01L21/31144 , H01L21/76813
摘要： A method for fabricating an integrated circuit device is provided. In one embodiment, the method includes providing a substrate. A first photolithography process is performed to define a first pattern on the substrate. The first pattern includes a first trench segment. A second photolithography process is performed which defines a second pattern on the substrate. The second pattern includes a second trench segment. The second trench segment includes an overlap area with the first trench segment. The embodiment of the method further includes etching the substrate according the first and second patterns; the etching includes forming a via hole defined by the overlap area. The first trench segment, second trench segment, and via hole may be used to form a dual damascene interconnect structure.
摘要翻译：提供一种制造集成电路器件的方法。在一个实施例中，该方法包括提供基底。执行第一光刻工艺以在衬底上限定第一图案。第一图案包括第一沟槽段。执行在衬底上限定第二图案的第二光刻工艺。第二图案包括第二沟槽段。第二沟槽段包括与第一沟槽段重叠的区域。该方法的实施例还包括根据第一和第二图案蚀刻衬底; 蚀刻包括形成由重叠区域限定的通孔。第一沟槽段，第二沟槽段和通孔可用于形成双镶嵌互连结构。

18. 发明申请

US20100252078A1 Apparatus for Recycling Noble Metals 审中-公开
标题翻译：回收贵金属的设备
公开(公告)号：US20100252078A1
公开(公告)日：2010-10-07
申请号：US12487800
申请日：2009-06-19
申请人： Chin-Hsiung YANG , Hsin-Yi Tsai
发明人： Chin-Hsiung YANG , Hsin-Yi Tsai
IPC分类号： B01J19/00 , B01D11/02
CPC分类号： C22B3/02 , C22B7/006 , C22B11/042 , C22B11/046 , Y02P10/214 , Y02P10/234
摘要： The present invention provides an apparatus for recycling noble metals, which comprises one or more conveyers, one or more carriers, an immersion device, one or more dissolution devices, and one or more rinse devices. The carriers, the immersion device, the dissolution devices, and the rinse devices are arranged in U-shape. Thereby, adding an object containing noble metals or pouring the object containing noble metals can be performed on the same side of the apparatus for recycling noble metals. Hence, a user needs not to operate on both sides of the apparatus for recycling noble metals, enhancing ease of operation. The carriers carry objects containing noble metals. The conveyer is used for conveying the carriers to the immersion device, the dissolution devices, and the rinse devices sequentially for recycling noble metals from the objects containing noble metals. The apparatus according to the present invention can recycle noble metals continuously. Thereby, the speed of recycling is enhanced, and the amount of recycled noble metals is increased as well.
摘要翻译：本发明提供了一种用于再循环贵金属的装置，其包括一个或多个输送机，一个或多个载体，浸没装置，一个或多个溶解装置以及一个或多个冲洗装置。载体，浸没装置，溶解装置和冲洗装置被布置成U形。由此，可以在贵金属的再循环装置的同一侧进行含有贵金属的物质的投入或含有贵金属的物品的投入。因此，用户不需要在用于回收贵金属的设备的两侧上操作，增强操作的便利性。载体携带含有贵金属的物体。输送机用于将载体输送到浸没装置，溶解装置和冲洗装置，用于从含有贵金属的物体中回收贵金属。根据本发明的装置可以连续地回收贵金属。因此，回收速度提高，回收贵金属的量也增加。

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