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    • 2. 发明申请
    • PIXEL STRUCTURE AND FABRICATING METHOD THEREOF
    • 像素结构及其制作方法
    • US20090085032A1
    • 2009-04-02
    • US12014098
    • 2008-01-15
    • Hsien-Kun ChiuChin-Chuan LaiShau-Lin Lyu
    • Hsien-Kun ChiuChin-Chuan LaiShau-Lin Lyu
    • H01L33/00H01L21/00
    • H01L27/1288H01L27/1214
    • A method of fabricating a pixel structure is provided. First, a semiconductor material layer and a first conductive layer are sequentially formed on a substrate. Next, a first patterned photoresist layer with a fillister is formed on the first conductive layer by a first mask. A semiconductor layer, a drain, and a source are formed by the first patterned photoresist layer. After removing the first patterned photoresist layer, a dielectric material layer covering the source, the drain, and the semiconductor layer is formed. A second conductive layer is formed on the dielectric material layer. Then, a second patterned photoresist layer with a salient is formed on the second conductive layer by a second mask. A gate and a dielectric layer are formed by the second patterned photoresist layer. After removing the second patterned photoresist layer, a pixel electrode electrically connected to the drain is formed above the substrate.
    • 提供了一种制造像素结构的方法。 首先,在衬底上依次形成半导体材料层和第一导电层。 接下来,通过第一掩模在第一导电层上形成具有填充物的第一图案化光致抗蚀剂层。 半导体层,漏极和源极由第一图案化光致抗蚀剂层形成。 在去除第一图案化光致抗蚀剂层之后,形成覆盖源极,漏极和半导体层的电介质材料层。 在介电材料层上形成第二导电层。 然后,通过第二掩模在第二导电层上形成具有凸起的第二图案化光致抗蚀剂层。 栅极和电介质层由第二图案化光致抗蚀剂层形成。 在去除第二图案化光致抗蚀剂层之后,在衬底上形成电连接到漏极的像素电极。