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11. 发明授权

US5426330A Refractory metal capped low resistivity metal conductor lines and vias 失效
$Refractory metal capped low resistivity metal conductor lines and vias$
标题翻译：耐火金属封盖的低电阻金属导线和通孔
公开(公告)号：US5426330A
公开(公告)日：1995-06-20
申请号：US125107
申请日：1993-09-21
申请人： Rajiv V. Joshi , Jerome J. Cuomo , Hormazdyar M. Dalal , Louis L. Hsu
发明人： Rajiv V. Joshi , Jerome J. Cuomo , Hormazdyar M. Dalal , Louis L. Hsu
IPC分类号： H01L21/28 , H01L21/312 , H01L21/316 , H01L21/318 , H01L21/768 , H01L23/498 , H01L23/522 , H01L23/532 , H01L29/40
CPC分类号： H01L21/76843 , H01L21/76838 , H01L21/7684 , H01L21/76847 , H01L21/76849 , H01L21/76852 , H01L21/76877 , H01L23/49866 , H01L23/53223 , H01L23/53228 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/09701 , Y10S148/015 , Y10S257/915 , Y10S438/959
摘要： A device includes a substrate, at least one dielectric layer positioned on said substrate, and metalization positioned in an opening in the at least one dielectric layer and extending a predetermined distance towards the substrate from a surface which is substantially coplanar with a surface of the at least one dielectric layer. The metalization includes a low resistivity metal or alloy encapsulated by a refractory metal or alloy having a resistivity greater than that of the low resistivity metal or alloy and having a columnar structure. The metalization has a plurality of sides in cross-section, at least three sides of the plurality of sides being substantially formed of a refractory metal or alloy having a common composition, at least two sides of the plurality of sides extending substantially the predetermined distance, and all of the plurality of sides being formed within the opening in the at least one dielectric layer.
摘要翻译：一种器件包括衬底，位于所述衬底上的至少一个电介质层和位于所述至少一个介电层中的开口中的金属化，并且从与所述衬底的表面基本上共面的表面向所述衬底延伸预定距离至少一个介电层。金属化包括由难熔金属或合金包覆的低电阻率金属或合金，其电阻率大于低电阻率金属或合金的电阻率，并具有柱状结构。金属化具有多个横截面，多个侧面的至少三个边基本上由具有共同成分的难熔金属或合金形成，多个侧面的至少两侧基本上延伸预定距离，并且所述多个侧面中的所有多个侧面形成在所述至少一个介电层中的开口内。

12. 发明授权

US5403619A Solid state ionic polishing of diamond 失效
标题翻译：钻石的固态离子抛光
公开(公告)号：US5403619A
公开(公告)日：1995-04-04
申请号：US6343
申请日：1993-01-19
申请人： Jerome J. Cuomo , Joseph E. Yehoda
发明人： Jerome J. Cuomo , Joseph E. Yehoda
IPC分类号： B24B1/00 , C23C16/56 , C30B33/00 , G11B7/26 , G11B23/00 , C23C16/22 , B05D3/06
CPC分类号： C30B33/00 , B24B1/00 , C23C16/56 , C30B29/04 , G11B7/263 , G11B23/0064 , Y02T50/67 , Y10T428/24355 , Y10T428/30
摘要： A process and apparatus for polishing diamond or carbon nitride. A reaction and polishing take place at the interface between an oxygen superionic conductor (yittria-stabilized zirconia) and the diamond or carbon nitride. Oxygen anions are transported to the interface under the influence of a chemical gradient and react with the diamond or carbon nitride. Other mechanisms, such as an electric field and/or heat, that increase the partial pressure of oxygen on the opposing side of the interface of reaction can be used to accelerate the reaction time. The process may be undertaken at low temperatures and without mechanical motion, making it an attractive and useful polishing method. In addition, there is no residue of the polishing process which needs to be removed and polishing can be accomplished in ambient air.
摘要翻译：用于抛光金刚石或碳氮化物的方法和设备。反应和抛光发生在氧离子导体（氧化钇稳定的氧化锆）和金刚石或碳氮化物之间的界面处。氧化阴离子在化学梯度的影响下运送到界面，并与金刚石或碳氮化物反应。可以使用增加反应界面的相对侧上的氧的分压的诸如电场和/或热的其它机理来加速反应时间。该方法可以在低温和无机械运动下进行，使其成为有吸引力和有用的抛光方法。此外，不需要去除抛光工艺的残留物并且可以在环境空气中进行抛光。

13. 发明授权

US5300813A Refractory metal capped low resistivity metal conductor lines and vias 失效
$Refractory metal capped low resistivity metal conductor lines and vias$
标题翻译：耐火金属封盖的低电阻金属导线和通孔
公开(公告)号：US5300813A
公开(公告)日：1994-04-05
申请号：US841967
申请日：1992-02-26
申请人： Rajiv V. Joshi , Jerome J. Cuomo , Hormazdyar M. Dalal , Louis L. Hsu
发明人： Rajiv V. Joshi , Jerome J. Cuomo , Hormazdyar M. Dalal , Louis L. Hsu
IPC分类号： H01L21/28 , H01L21/312 , H01L21/316 , H01L21/318 , H01L21/768 , H01L23/498 , H01L23/522 , H01L23/532 , H01L29/440 , H01L29/460
CPC分类号： H01L21/76843 , H01L21/76838 , H01L21/7684 , H01L21/76847 , H01L21/76849 , H01L21/76852 , H01L21/76877 , H01L23/49866 , H01L23/53223 , H01L23/53228 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/09701 , Y10S148/015 , Y10S257/915 , Y10S438/959
摘要： A contact structure for a semiconductor device having a first refractory metal layer formed only at the bottom of a contact hole. The first refractory metal is selected from a group comprising titanium (Ti), titanium alloys or compounds such as Ti/TiN, tungsten (W), titanium/tungsten (Ti/W) alloys, or chromium (Cr) or tantalum (Ta) and their alloys or some other suitable material. A low resistivity layer comprising a single, binary or ternary metalization is deposited over the first refractory metal layer in the contact hole by a method such as PVD using evaporation or collimated sputtering. The low resistivity layer has side walls which taper inwardly toward one another with increasing height of the layer and the low resistivity layer does not contact the side walls of the contact hole. The low resistivity layer may be Al.sub.x Cu.sub.y (x+y=1; x.gtoreq.0, y.gtoreq.0), ternary alloys such as Al-Pd-Cu or multicomponent alloys such as Al-Pd-Nb-Au. A second refractory metal layer is deposited over the low resistivity layer. The second refractory metal layer may be tungsten, cobalt, nickel, molybdenum or alloys/compounds such as Ti/TiN. The first and second refractory metal layers completely encapsulate the low resistivity layer. The first and second refractory metal layers can comprise an alloy containing silicon with a higher incorporated silicon content near the top of the contact hold present as a distinct or graded composition than at a location closer to the bottom of the contact hole.
摘要翻译：一种用于半导体器件的接触结构，其具有仅在接触孔的底部形成的第一难熔金属层。第一难熔金属选自钛（Ti），钛合金或Ti / TiN，钨（W），钛/钨（Ti / W）合金或铬（Cr）或钽（Ta）及其合金或其他合适的材料。包含单一二元或三元金属化的低电阻率层通过诸如使用蒸发或准直溅射的PVD的方法沉积在接触孔中的第一难熔金属层上。低电阻率层具有随着层的高度逐渐向内逐渐向内逐渐变细的侧壁，低电阻层不接触接触孔的侧壁。低电阻率层可以是AlxCuy（x + y = 1; x> = 0，y> = 0），诸如Al-Pd-Cu的三元合金或诸如Al-Pd-Nb-Au的多组分合金。在低电阻率层上沉积第二难熔金属层。第二耐火金属层可以是钨，钴，镍，钼或诸如Ti / TiN的合金/化合物。第一和第二难熔金属层完全封装低电阻率层。第一和第二难熔金属层可以包含含有硅的合金，其中接合保持层的顶部附近具有更高的掺入硅含量，作为不同或分级的组成，而不是靠近接触孔底部的位置。

14. 发明授权

US4849079A Process for preparing low electrical contact resistance composition 失效
标题翻译：制备低电接触电阻组合物的方法
公开(公告)号：US4849079A
公开(公告)日：1989-07-18
申请号：US186403
申请日：1988-04-26
申请人： Jerome J. Cuomo , Eric P. Dibble , Solomon L. Levine
发明人： Jerome J. Cuomo , Eric P. Dibble , Solomon L. Levine
IPC分类号： C23C14/06 , C23C14/34 , H01H1/023
CPC分类号： H01H1/023 , C23C14/0688 , C23C14/3414
摘要： A composition of a metallic compound represented by the formula MT, and G is provided by sputtering an M.sub.x G.sub.100-x target. M is a metal selected from the group of titanium, hafnium, zirconium, and mixtures thereof. T is selected from the group of N, C, and mixtures thereof. G is a metal selected from the group of gold, platinum, and palladium. X is an integer from about 65 to about 95. Also provided are substances coated with the composition and process for depositing the composition on substrates.
摘要翻译：通过溅射MxG100-x靶来提供由式MT表示的金属化合物的组成和G。 M是选自钛，铪，锆及其混合物的金属。 T选自N，C及其混合物。 G是选自金，铂和钯的金属。 X是约65至约95的整数。还提供了涂覆有组合物的物质和用于将组合物沉积在基底上的方法。

15. 发明授权

US4448487A Photon energy conversion 失效
标题翻译：光子能量转换
公开(公告)号：US4448487A
公开(公告)日：1984-05-15
申请号：US43398
申请日：1979-05-29
申请人： Jerome J. Cuomo , Thomas H. DiStefano , Jerry M. Woodall
发明人： Jerome J. Cuomo , Thomas H. DiStefano , Jerry M. Woodall
IPC分类号： F24J2/48 , G02B1/10
CPC分类号： F24J2/487 , Y02E10/40 , Y10S126/908
摘要： Photon energy can be efficiently absorbed by a material having a reflectivity control surface region wherein the index of refraction, the thickness, and the contour of the external surface of the reflecting control surface region operate to curtail all reradiation components.
摘要翻译：可以通过具有反射控制表面区域的材料有效地吸收光子能量，其中反射控制表面区域的外表面的折射率，厚度和轮廓操作以限制所有再辐射分量。

16. 发明授权

US4236946A Amorphous magnetic thin films with highly stable easy axis 失效
标题翻译：非晶磁性薄膜具有高度稳定的易轴
公开(公告)号：US4236946A
公开(公告)日：1980-12-02
申请号：US886020
申请日：1978-03-13
申请人： Joseph A. Aboaf , Jerome J. Cuomo , Amitava Gangulee , Robert J. Kobliska
发明人： Joseph A. Aboaf , Jerome J. Cuomo , Amitava Gangulee , Robert J. Kobliska
IPC分类号： C23C14/00 , C21D6/00 , C22F1/00 , C23C14/14 , C23C14/58 , H01F10/12 , H01F10/13 , H01F10/14 , H01F41/14 , C21D1/04
CPC分类号： C23C14/5806 , C23C14/14 , C23C14/58 , C23C14/584 , H01F10/132 , Y10S428/90
摘要： A sputtered thin film of an amorphous material composed of a magnetic transition metal X and element Y plus possibly an element Z has low coercivity for domains in the plane, has a well defined and stable magnetic easy axis which is extremely stable without heating above the Curie point, with a high and flat value of permeability from low frequencies to greater than 10 megahertz. Metal X can include at least one of Fe, Ni, and Co. Element Y can include at least one of Si and B. Element Z can be included composed of Cr, for example.
摘要翻译：由磁性过渡金属X和元素Y以及可能的元素Z组成的非晶材料的溅射薄膜对于平面中的畴具有低矫顽力，具有良好限定且稳定的易磁化轴，其非常稳定而不加热居里具有从低频到大于10兆赫的高平坦的磁导率值。金属X可以包括Fe，Ni和Co中的至少一种。元素Y可以包括Si和B中的至少一种。元素Z可以包括例如由Cr构成。

17. 发明授权

US4132571A Growth of polycrystalline semiconductor film with intermetallic nucleating layer 失效
标题翻译：具有金属间成核层的多晶半导体膜的生长
公开(公告)号：US4132571A
公开(公告)日：1979-01-02
申请号：US765497
申请日：1977-02-03
申请人： Jerome J. Cuomo , Thomas H. DiStefano , Robert Rosenberg
发明人： Jerome J. Cuomo , Thomas H. DiStefano , Robert Rosenberg
IPC分类号： C23C14/02 , C23C16/00 , C30B11/12 , C30B23/02 , C30B25/02 , C30B25/18 , B01J17/26
CPC分类号： C30B29/06 , C23C14/02 , C23C16/003 , C30B11/12 , C30B23/02 , C30B25/18 , Y10S148/061 , Y10S148/154
摘要： A method is disclosed for fabricating a thin elemental semiconductor, e.g., Si or Ge, film with columnar grains in a filamentary structure, by the use of an intermetallic compound incorporating the elemental semiconductor to form a nucleating layer for the growth of the semiconducting film. The semiconductor is grown from vapor phase by the technique of either vacuum evaporation or chemical vapor deposition, e.g., by decomposition of SiH.sub.4. The semiconductor e.g., Si, is initially deposited onto a thin film of a specific metal, e.g., Pt or Ni, on any inert substrate, e.g., SiO.sub.2 or Al.sub.2 O.sub.3, which is held at a temperature, e.g., 900.degree. C, above the eutectic point, i.e., 830.degree. C, of an intermetallic compound and the metallic film, and below the eutectic point, i.e., 979.degree. C, of another intermetallic compound and the semiconductor.Deposition of the semiconductor onto the metallic film produces a layer of liquid comprising the semiconductor and metal, which increases in thickness until the metallic layer is completely consumed. Additional deposition of the semiconductor produces a supersaturated liquid from which large crystallites of the intermetallic precipitate. With increasing deposition of semiconductor, the crystallites of intermetallic material continue to grow until they consume all of the metal in the liquid, at which point no liquid remains. Continuing deposition of semiconductor material results in the growth of filamentary crystallites of the semiconductor out of the intermetallic surface. The result is a columnar film of the semiconductor with a filamentary structure originating from the crystallites of intermetallic nucleating material.
摘要翻译：公开了通过使用掺入元素半导体的金属间化合物形成用于半导体膜的生长的成核层来制造薄元素半导体的方法，例如具有丝状结构的柱状晶粒的Si或Ge薄膜。通过真空蒸发或化学气相沉积的技术，例如通过SiH 4的分解，从气相生长半导体。半导体例如Si最初沉积在特定金属（例如Pt或Ni）的薄膜上，任何惰性基底上，例如SiO 2或Al 2 O 3，其保持在例如900℃以上的温度共晶点，即830℃的金属间化合物和金属膜，低于另一种金属间化合物和半导体的共晶点，即979℃。

18. 发明授权

US3965463A Apparatus using amorphous magnetic compositions 失效
标题翻译：使用无定形磁性组合物的装置
公开(公告)号：US3965463A
公开(公告)日：1976-06-22
申请号：US581078
申请日：1975-05-27
申请人： Praveen Chaudhari , Jerome J. Cuomo , Richard J. Gambino
发明人： Praveen Chaudhari , Jerome J. Cuomo , Richard J. Gambino
IPC分类号： G02F1/00 , G11B11/10 , G11B11/105 , G11C13/06 , G11C19/08 , H01F10/13 , G11C11/14
CPC分类号： G02F1/0036 , G11B11/10 , G11B11/10582 , G11B11/10591 , G11C13/06 , G11C19/08 , G11C19/0808 , G11C19/085 , G11C19/0866 , H01F10/135 , G11C13/0004
摘要： Apparatus using amorphous magnetic compositions having uniaxial anisotropy include bubble domain apparatus, light modulating apparatus, permanent magnet systems, and tape and disc information handling systems. The amorphous magnetic composition can be prepared in thin film or bulk form or as particles in a binder. The anisotropy can be parallel to the plane of a film of this material or perpendicular to the film plane. The amorphous material is comprised of a single element or is a multicomponent system where as at least one of the components has an unimpaired spin so that the composition has a net magnetic moment. The amorphous composition exists as a microcrystalline structure having localized atomic ordering over a distance 25-100 A, or as a substantially amorphous structure where localized atomic ordering is over distances less than 25A. Binary and ternary compositions, either alloys or compounds, are suitable. The magnetic properties of the compositions can be changed during fabrication or after fabrication, and the compositions can be doped readily without adversely affecting magnetic properties.
摘要翻译：使用具有单轴各向异性的非晶磁性组合物的装置包括气泡域装置，光调制装置，永磁体系统以及磁带和盘信息处理系统。非晶磁性组合物可以以薄膜或本体形式或作为粘合剂中的颗粒制备。各向异性可以平行于该材料的膜的平面或垂直于膜平面。无定形材料由单一元件组成或是多组分系统，其中至少一个组分具有未受损的自旋，使得组合物具有净磁矩。无定形组合物存在为在距离25-100A处具有局部原子排序的微晶结构，或者作为基本上非晶体结构，其中局部原子排序超过距离小于25A。二元和三元组合物，合金或化合物都是合适的。组合物的磁性能可以在制造期间或制造后改变，并且可以容易地掺杂组合物而不会不利地影响磁性。

19. 发明授权

US08133324B2 Methods for removal of polymeric coating layers from coated substrates 有权
标题翻译：从涂覆的基材上去除聚合物涂层的方法
公开(公告)号：US08133324B2
公开(公告)日：2012-03-13
申请号：US11154924
申请日：2005-06-16
申请人： James A. Claar , Jerome J. Cuomo , David A. Diehl , Christopher J. Oldham , Roger C. Sanwald , Truman F. Wilt , Peter J. Yancey
发明人： James A. Claar , Jerome J. Cuomo , David A. Diehl , Christopher J. Oldham , Roger C. Sanwald , Truman F. Wilt , Peter J. Yancey
IPC分类号： B08B7/00
CPC分类号： B08B7/0035 , B44D3/16
摘要： The invention provides a method for the at least partial removal of one or more polymeric coating layers from a coated substrate having at least one coated surface. The method includes generating at least one reactive species in an ionized gas stream discharged at atmospheric pressure; and placing the coated surface in the ionized gas stream. The at least one reactive species reacts with the one or more polymeric coating layers such that one or more coating layers is at least partially removed from the coated surface of the substrate at atmospheric pressure.
摘要翻译：本发明提供了一种用于从具有至少一个涂覆表面的涂覆基材至少部分去除一个或多个聚合物涂层的方法。该方法包括在大气压下排出的电离气流产生至少一种反应性物质; 并将涂覆的表面放置在电离气流中。至少一种反应性物质与一种或多种聚合物涂层反应，使得一个或多个涂层在大气压力下至少部分地从基底的涂覆表面除去。

20. 发明授权

US06787010B2 Non-thermionic sputter material transport device, methods of use, and materials produced thereby 有权
标题翻译：非热离子溅射材料输送装置，使用方法和由此生产的材料
公开(公告)号：US06787010B2
公开(公告)日：2004-09-07
申请号：US09997162
申请日：2001-11-29
申请人： Jerome J. Cuomo , N. Mark Williams
发明人： Jerome J. Cuomo , N. Mark Williams
IPC分类号： C23C1435
CPC分类号： C30B23/02 , C23C14/0063 , C23C14/3428 , C23C14/354 , C23C14/355 , C30B29/403 , C30B29/406 , H01J37/3408
摘要： A sputter transport device comprises a sealed chamber, a negatively-biased target cathode holder disposed in the chamber, and a substrate holder disposed in the chamber and spaced at a distance from the target cathode. A target cathode is bonded to the target cathode holder. A magnetron assembly is disposed in the chamber proximate to the target cathode. A negatively-biased, non-thermionic electron/plasma injector assembly is disposed between the target cathode and the substrate holder. The injector assembly fluidly communicates with a gas source and includes a plurality of hollow cathodes. Each hollow cathode includes an orifice communicating with the chamber. The device can be used to produce thin-films and ultra-thick materials in polycrystalline, single-crystal and epitaxial forms, and thus to produce articles and devices that are useful as metallic or insulating coatings, and as bulk semiconductor and optoelectronic materials.
摘要翻译：溅射输送装置包括密封室，设置在室中的负偏压目标阴极保持器和设置在室中并与靶阴极间隔一定距离的衬底保持器。目标阴极与目标阴极保持器结合。磁控管组件设置在靠近目标阴极的腔室中。负极偏置的非热电子/等离子体注入器组件设置在目标阴极和衬底保持器之间。喷射器组件与气体源流体连通并且包括多个空心阴极。每个空心阴极包括与腔连通的小孔。该器件可用于以多晶，单晶和外延形式生产薄膜和超厚材料，从而生产可用作金属或绝缘涂层以及作为体半导体和光电子材料的制品和器件。

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