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11. 发明授权

EP1603697B1 SUBMERGED ENTRY NOZZLE WITH DYNAMIC STABILIZATION 有权
标题翻译：喷嘴淹没摄入和动态稳定
公开(公告)号：EP1603697B1
公开(公告)日：2006-08-16
申请号：EP04718823.0
申请日：2004-03-09
申请人： VESUVIUS CRUCIBLE COMPANY
发明人： XU, Dong , HEASLIP, Lawrence , RICHAUD, Johan , DORRICOTT, James
IPC分类号： B22D41/50 , B22D11/00
CPC分类号： B22D41/50
摘要： The present invention relates to a pour tube for casting molten metal. The pour tube is adapted to reduce turbulence and mold disturbances, thereby producing a more stable, uniform outflow. The pour tube includes an exit port with at least one tongue to provide at least two slots on either side of the tongue. The slots generate counter-rotating flows, which result in a more diffusive and more homogeneous outflow. Advantageously, such an outflow can reduce detrimental asymmetry and alumina clogging in the pour tube.

12. 发明公开

EP1603697A1 SUBMERGED ENTRY NOZZLE WITH DYNAMIC STABILIZATION 有权
标题翻译：喷嘴淹没摄入和动态稳定
公开(公告)号：EP1603697A1
公开(公告)日：2005-12-14
申请号：EP04718823.0
申请日：2004-03-09
申请人： VESUVIUS CRUCIBLE COMPANY
发明人： XU, Dong , HEASLIP, Lawrence , RICHAUD, Johan , DORRICOTT, James
IPC分类号： B22D41/50 , B22D11/00
CPC分类号： B22D41/50
摘要： The present invention relates to a pour tube for casting molten metal. The pour tube is adapted to reduce turbulence and mold disturbances, thereby producing a more stable, uniform outflow. The pour tube includes an exit port with at least one tongue to provide at least two slots on either side of the tongue. The slots generate counter-rotating flows, which result in a more diffusive and more homogeneous outflow. Advantageously, such an outflow can reduce detrimental asymmetry and alumina clogging in the pour tube.

13. 发明授权

EP1296786B1 SLIDING GATE FOR LIQUID METAL FLOW CONTROL 有权
标题翻译：滑动盖用于调节液体金属的浇注流
公开(公告)号：EP1296786B1
公开(公告)日：2005-11-16
申请号：EP01928311.8
申请日：2001-03-16
申请人： VESUVIUS CRUCIBLE COMPANY
发明人： XU, Dong , HEASLIP, Lawrence, J. , DORRICOTT, James, D.
IPC分类号： B22D41/22
CPC分类号： B22D41/24
摘要： A metering gate for liquid metal flow control (1010) with reduced clogging with a top plate (1030), having a first flow channel bore (1031) with an inlet (1032) having an inlet axis (1015) and an outlet(1038) having an outlet axis (1033). The inlet axis (1015) and the outlet axis (1033) are offset (1036). A throttle plate (1040) slidably mounted on the top (1030) plate selectably receives flow from the top plate (1030). The metering gate (1010) provides a less tortuous and more symmetrical flow path when the gate is partially open, but provides a relatively straight downward flow channel allowing full flow when the gate is fully open.

14. 发明公开

EP1296786A1 SLIDING GATE FOR LIQUID METAL FLOW CONTROL 有权
标题翻译：滑动盖用于调节液体金属的浇注流
公开(公告)号：EP1296786A1
公开(公告)日：2003-04-02
申请号：EP01928311.8
申请日：2001-03-16
申请人： Vesuvius Crucible Company
发明人： XU, Dong , HEASLIP, Lawrence, J. , DORRICOTT, James, D.
IPC分类号： B22D41/22
CPC分类号： B22D41/24
摘要： A metering gate for liquid metal flow control (1010) with reduced clogging with a top plate (1030), having a first flow channel bore (1031) with an inlet (1032) having an inlet axis (1015) and an outlet(1038) having an outlet axis (1033). The inlet axis (1015) and the outlet axis (1033) are offset (1036). A throttle plate (1040) slidably mounted on the top (1030) plate selectably receives flow from the top plate (1030). The metering gate (1010) provides a less tortuous and more symmetrical flow path when the gate is partially open, but provides a relatively straight downward flow channel allowing full flow when the gate is fully open.

15. 发明申请

WO2011034502A1 TEXTUAL QUERY BASED MULTIMEDIA RETRIEVAL SYSTEM 审中-公开
标题翻译：基于文本查询的多媒体检索系统
公开(公告)号：WO2011034502A1
公开(公告)日：2011-03-24
申请号：PCT/SG2010/000343
申请日：2010-09-16
申请人： XU, Dong , TSANG, Wai Hung , LIU, Yiming , NANYANG TECHNOLOGICAL UNIVERSITY
发明人： XU, Dong , TSANG, Wai Hung , LIU, Yiming
IPC分类号： G06F17/30
CPC分类号： G06F17/30017 , G06F17/30253 , G06F17/30648 , G06F17/3071
摘要： A system and method are proposed for identifying multimedia files in a first database which are related to a textual term specified by a user. The textual term is used to search a second database of multimedia files, each of which is associated with a portion of text. The "second database" is usually composed of files from the databases of a very large number of servers connected via the internet. The multimedia files identified in the search are ones for which the corresponding associated text is relevant to the textual term. The identified multimedia files are used to generate a classifier engine. The classifier engine is then applied to the first database of multimedia files, thereby retrieving multimedia files in the first database which are relevant to the textual term. The user can optionally specify whether the retrieved multimedia files are relevant or not, and this permits a feedback process to improve the classifier engine.
摘要翻译：提出了一种用于识别第一数据库中与用户指定的文本词相关的多媒体文件的系统和方法。文本术语用于搜索多媒体文件的第二个数据库，其中每个文件与一部分文本相关联。 “第二数据库” 通常由通过互联网连接的大量服务器的数据库中的文件组成。搜索中标识的多媒体文件是对应的相关文本与文本词语相关的文件。所识别的多媒体文件被用于生成分类器引擎。然后将分类器引擎应用到多媒体文件的第一数据库，从而检索第一数据库中与文本术语相关的多媒体文件。用户可以选择指定检索到的多媒体文件是否相关，这允许反馈过程改进分类器引擎。

16. 发明申请

WO2007147168A2 ATTENUATION OF HYPEROXIA-INDUCED CELL DEATH WITH MITOCHONDRIAL ALDEHYDE DEHYDROGENASE 审中-公开
标题翻译：超氧化物歧化酶诱导的细胞死亡与麻醉醛糖脱氢酶的衰减
公开(公告)号：WO2007147168A2
公开(公告)日：2007-12-21
申请号：PCT/US2007/071492
申请日：2007-06-18
申请人： THE CHILDREN'S MERCY HOSPITAL , XU, Dong , TRUOG, William, E.
发明人： XU, Dong , TRUOG, William, E.
IPC分类号： C12N15/09
CPC分类号： C12N9/0008 , A61K48/00 , C12N2510/00
摘要： Oxygen toxicity is one of the major risk factors in Jhe development of the chronic lung disease or bronchopulmonary dysplasia in premature infants. Using proteoraic analysis, we discovered mitochondria! aldehyde dehydrogenase (mtALDR or ALDB2) was down-regulated in neonatal rat lung after hyperoxic exposure. To study the role of mtALDH in hyperoxie lung injury, we overexpressed ratALDH in human lung epithelial ceils (A549) and found thai mtALDH significantly reduced hyperoxia-induced cell death. Compared to control cells (Neo- A549), the.necrotic cell death in mtALDH overexpressing cells (mtALDH-A549) decreased from 25.3% to 6.5%, 50.5% to 9.1% and 52,4% to 15.06% after 24-, 48- and 72-hour hyperoxic exposure, respectively. The levels of intracellular and mitochondria-derived reactive oxygen species (ROS) in ratALDH-A549 cells after hyperoxic exposure were significantly lowered compared to Nεo-A549 cells. mtALDH overexpreasion significantly stimulated extracellular signal regulated kinase (HRK) phosphorylation, under nontoxic and hyperoxic conditions. inhibition of ERK phosphorylation partially eliminated the protective effect of mtALDH in hyperoxia-induced cell death, suggesting ERK activation by ratALDH conferred cellular resistance to hyperoxia. mtALDH overexpresaion augmented Akt phosphorylation and maintained She total Akt level in mt ALDH- A549 cells under.nonnoxie and hyperoxic conditions. Inhibition of FBK activation by LY294002 in miALüH-A549 cells significantly increased necrotic cell death after hyperoxic exposure, indicating that. POKVAkt activation by mtALDH played an important role in cell survival after hyperoxia. Taken together, these data demonstrate that πuALDH overexpression attenuates hyperøxia-induced cell death in lung epithelial cells through reduction of ROS, activation of ERK/MAPK and PBK/Akt cell survival signaling pathways.
摘要翻译：氧气毒性是早产儿慢性肺部疾病或支气管肺发育异常的主要危险因素之一。使用蛋白质分析，我们发现线粒体！醛脱氢酶（mtALDR或ALDB2）在高氧暴露后新生大鼠肺中下调。为了研究mtALDH在高氧肺损伤中的作用，我们在人肺上皮细胞（A549）中过表达大鼠ALDH，发现mtALDH显着降低高氧诱导的细胞死亡。与对照细胞（Neo-A549）相比，mtALDH过表达细胞（mtALDH-A549）中坏死性细胞死亡率从24.3％下降到25.3％，分别为25.5％，9.1％和52.4％，降幅达到15.06％ - 和72小时高氧暴露。与Neo-A549细胞相比，高氧暴露后大鼠HDH-A549细胞中细胞内和线粒体来源的活性氧（ROS）水平显着降低。在无毒和高氧条件下，mtALDH过表达显着刺激细胞外信号调节激酶（HRK）磷酸化。抑制ERK磷酸化部分消除了mtALDH在高氧诱导的细胞死亡中的保护作用，表明大鼠ALD的ERK活化赋予细胞对高氧的抗性。 mtALDH过表达增强Akt磷酸化，并维持她在无氧和高氧条件下的总ALDH-A549细胞中的总Akt水平。在miALüH-A549细胞中LY294002对FBK活化的抑制显着增加了高氧暴露后的坏死细胞死亡，表明。 mtALDH的POKVAkt激活在高氧后细胞存活中起重要作用。总之，这些数据表明，puALDH过表达通过减少ROS，激活ERK / MAPK和PBK / Akt细胞存活信号通路来减弱肺上皮细胞中的眼眶诱导的细胞死亡。

17. 发明申请

WO2006083383A2 LOW-TEMPERATURE-GROWN (LTG) INSULATED-GATE PHEMT DEVICE AND METHOD 审中-公开
标题翻译：低温成型（LTG）绝缘栅型PHEMT装置和方法
公开(公告)号：WO2006083383A2
公开(公告)日：2006-08-10
申请号：PCT/US2005/043357
申请日：2005-12-01
申请人： BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION, INC. , NICHOLS, Kirby, B , ACTIS, Robert , XU, Dong , KONG, Wendell, M., T.
发明人： NICHOLS, Kirby, B , ACTIS, Robert , XU, Dong , KONG, Wendell, M., T.
IPC分类号： H01L29/24
CPC分类号： H01L29/42376 , H01L21/02395 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/02631 , H01L21/314 , H01L29/66462 , H01L29/7784
摘要： A pseudomorphic-high-electron-mobility-transistor (PHEMT) includes a substrate, a low-temperature-grown (LTG) GaAs gate-insulator layer disposed on the substrate, and a gate electrode disposed on the gate-insulator layer.
摘要翻译：假晶高电子迁移率晶体管（PHEMT）包括衬底，设置在衬底上的低温生长（LTG）GaAs栅极绝缘层和设置在衬底上的栅电极栅绝缘层。

18. 发明申请

WO2013055423A2 METHOD AND DESIGN OF AN RF THRU-VIA INTERCONNECT 审中-公开
标题翻译：射频三相互连接的方法与设计
公开(公告)号：WO2013055423A2
公开(公告)日：2013-04-18
申请号：PCT/US2012/047135
申请日：2012-07-18
申请人： BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC. , ACTIS, Robert , CHAO, Pane-Chane , LENDER, Robert, J. , CHU, Kanin , SCHMANSKI, Bernard, J. , JESSUP, Sue, May , XU, Dong , IMMORLICA, Anthony, A.
发明人： ACTIS, Robert , CHAO, Pane-Chane , LENDER, Robert, J. , CHU, Kanin , SCHMANSKI, Bernard, J. , JESSUP, Sue, May , XU, Dong , IMMORLICA, Anthony, A.
IPC分类号： H01L27/14
CPC分类号： H01L23/373 , H01L23/481 , H01L23/66 , H01L2223/6622 , H01L2223/6627 , H01L2224/4847 , H01L2924/10272 , H01L2924/1033 , H01L2924/1421 , H01L2924/3011 , H01L2924/30111 , H01L2924/00
摘要： In summary, a vertical metalized transition in the form of a via goes from the back side of a high thermal conductivity substrate and through any semiconductor layers thereon to a patterned metalized strip, with the substrate having a patterned metalized layer on the back side that is provided with a keep away zone dimensioned to provide impedance matching for RF energy coupled through the substrate to the semiconductor device while at the same time permitting the heat generated by the semiconductor device to flow through the high thermal conductivity substrate, through the back side of the substrate and to a heat sink.
摘要翻译：总而言之，以通孔形式的垂直金属化转变从高导热性衬底的背面开始并通过其上的任何半导体层到图案化的金属化带，衬底在背面具有图案化的金属化层，具有保留区，其尺寸设置成为通过衬底耦合到半导体器件的RF能量提供阻抗匹配，同时允许由半导体器件产生的热量流过高导热性衬底，通过该衬底的背面衬底和散热片。

19. 发明申请

WO2011002945A1 SOYBEAN TRANSCRIPTION FACTORS AND OTHER GENES AND METHODS OF THEIR USE 审中-公开
标题翻译：大豆转录因子及其使用的基因及方法
公开(公告)号：WO2011002945A1
公开(公告)日：2011-01-06
申请号：PCT/US2010/040687
申请日：2010-06-30
申请人： THE CURATORS OF THE UNIVERSITY OF MISSOURI , NGUYEN, Henry, T. , STACEY, Gary , XU, Dong , CHENG, Jianlin , JOSHI, Trupti , LIBAULT, Marc , VALLIYODAN, Babu
发明人： NGUYEN, Henry, T. , STACEY, Gary , XU, Dong , CHENG, Jianlin , JOSHI, Trupti , LIBAULT, Marc , VALLIYODAN, Babu
IPC分类号： C07H21/02 , A01H5/00
CPC分类号： C07K14/415
摘要： Gene expression is controlled at the transcriptional level by very diverse group of proteins called transcription factors (TFs). 5671 soybean (Glycine max) genes have been identified and disclosed as putative transcription factors through mining of soybean genome sequences. Distinct classes of the TFs are also disclosed which may be expressed and or function in a manner that is tissue specific, developmental stage specific, biotic and/or abiotic stress specific. Manipulation and/or genetic engineering of specific transcription factors may improve the agronomic performance or nutritional quality of plants. Transgenic plants expressing a select number of these TFs are disclosed. These transgenic plants show some promising traits, such as improving the capability of the plant to grow and reproduce under drought conditions.
摘要翻译：基因表达通过称为转录因子（TF）的非常多样化的蛋白质组在转录水平下控制。已经通过大豆基因组序列的开采，鉴定了5671个大豆（Glycine max）基因并将其公开为推定的转录因子。还公开了TF的不同类别，其可以以组织特异性，发育阶段特异性，生物和/或非生物胁迫特异性的方式表达和/或起作用。特定转录因子的操作和/或遗传工程可以改善植物的农艺性能或营养品质。公开了表达选择数目的这些TF的转基因植物。这些转基因植物显示出一些有希望的性状，例如提高植物在干旱条件下生长和繁殖的能力。

20. 发明申请

WO2010138364A1 ASYMMETRICALLY RECESSED HIGH-POWER AND HIGH-GAIN ULTRA-SHORT GATE HEMT DEVICE 审中-公开
标题翻译：不相称的大功率和高增益超短门控制器
公开(公告)号：WO2010138364A1
公开(公告)日：2010-12-02
申请号：PCT/US2010/035507
申请日：2010-05-20
申请人： BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC. , XU, Dong , YANG, Xiaoping, S. , KONG, Wendell , MOHNKERN, Lee, M. , SMITH, Phillip, M. , CHAO, Pane-chane
发明人： XU, Dong , YANG, Xiaoping, S. , KONG, Wendell , MOHNKERN, Lee, M. , SMITH, Phillip, M. , CHAO, Pane-chane
IPC分类号： H01L29/778
CPC分类号： H01L29/66431 , H01L29/7784 , H01L29/7785
摘要： A high-power and high-gain ultra-short gate HEMT device has exceptional gain and an exceptionally high breakdown voltage provided b) an increased width asymmetric recess for the gate electrode, by a composite channel iaycr including a thin indium arsenide layer embedded in the indium gallium arsenide channel layer and by double doping through the use of an additional silicon doping spike. The improved transistor has an exceptional 14 dB gain at 1 10 GI iz and exhibits an exceptionally high 3.5-4 V breakdown voltage, thus to provide high gain, high-power and ultra-high frequency in an ultra-short gate device.
摘要翻译：大功率和高增益超短栅极HEMT器件具有出色的增益和特别高的击穿电压，b）用于栅电极的增加的宽度非对称凹槽，通过复合沟道iaycr，其包括嵌入在栅极电极中的薄的砷化铟层砷化铟镓沟道层，并通过双掺杂使用额外的硅掺杂尖峰。改进的晶体管在1 10 GI iz处具有超凡的14 dB增益，表现出极高的3.5-4 V击穿电压，从而在超短路器件中提供高增益，大功率和超高频。

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