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11. 发明授权

US07748138B2 Particle removal method for a substrate transfer mechanism and apparatus 有权
标题翻译：用于基板转印机构和装置的颗粒去除方法
公开(公告)号：US07748138B2
公开(公告)日：2010-07-06
申请号：US11128256
申请日：2005-05-13
申请人： Tsuyoshi Moriya , Hiroyuki Nakayama , Kikuo Okuyama , Manabu Shimada
发明人： Tsuyoshi Moriya , Hiroyuki Nakayama , Kikuo Okuyama , Manabu Shimada
IPC分类号： F26B3/00 , B65H1/00 , C23F1/00 , C23C16/00
CPC分类号： H01L21/67248 , H01L21/67103 , H01L21/67742
摘要： A substrate transfer mechanism for transferring a substrate includes a mounting table on which the substrate is mounted; an arm member connected to the mounting table and moving it. The substrate transfer mechanism further includes a temperature control unit for controlling temperature of the mounting table, wherein the temperature control unit forms a temperature gradient in the mounting table. The temperature control unit includes a detector for detecting temperature in an environment or a chamber in which the substrate transfer mechanism is installed a heater for heating the mounting table and a controller for controlling an operation of the heater based on the temperature in the environment or the chamber detected by the detector.
摘要翻译：用于转印衬底的衬底传送机构包括：安装台，其上安装有衬底; 连接到安装台并将其移动的臂构件。基板传送机构还包括用于控制安装台的温度的温度控制单元，其中温度控制单元在安装台中形成温度梯度。温度控制单元包括用于检测环境或室内温度的检测器，其中基板传送机构安装有用于加热安装台的加热器和用于基于环境中的温度控制加热器的操作的控制器检测器检测到室。

12. 发明申请

US20090223450A1 MEMBER OF SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工装置和基板加工装置的成员
公开(公告)号：US20090223450A1
公开(公告)日：2009-09-10
申请号：US12396712
申请日：2009-03-03
申请人： Tsuyoshi Moriya , Hiroyuki Nakayama , Toshiya Matsuda
发明人： Tsuyoshi Moriya , Hiroyuki Nakayama , Toshiya Matsuda
IPC分类号： C23C14/14
CPC分类号： C23C16/4404 , C23C16/52
摘要： A member of a substrate processing apparatus, which can prevent minute particles from becoming attached to a wafer. The substrate processing apparatus has a chamber in which the wafer is accommodated, and the wafer is subjected to plasma processing in the chamber. The member is disposed in the chamber and comprised of a base material and an yttria coating that coats the base material. The yttria coating is comprised of an yttria base layer coated on the base material, and an yttria upper layer laminated on at least a part of the yttria base layer, and the structure of the yttria upper layer is looser than that of the yttria base layer.
摘要翻译：能够防止微粒附着在晶片上的基板处理装置的构件。基板处理装置具有容纳晶片的室，并且在该室中进行等离子体处理。该构件设置在腔室中并且由基材和涂覆基材的氧化钇涂层组成。氧化钇涂层由涂覆在基材上的氧化钇基层和层叠在氧化钇基层的至少一部分上的氧化钇上层组成，并且氧化钇上层的结构比氧化钇底层的结构松散。

13. 发明申请

US20080245388A1 METHOD FOR CLEANING ELEMENTS IN VACUUM CHAMBER AND APPARATUS FOR PROCESSING SUBSTRATES 审中-公开
公开(公告)号：US20080245388A1
公开(公告)日：2008-10-09
申请号：US12131827
申请日：2008-06-02
申请人： Tsuyoshi Moriya , Hiroshi Nagaike , Hiroyuki Nakayama
发明人： Tsuyoshi Moriya , Hiroshi Nagaike , Hiroyuki Nakayama
IPC分类号： B08B6/00
CPC分类号： H01L21/67028 , B08B3/12 , H01J37/32862 , H01L21/6831
摘要： To clean an element in a vacuum chamber by causing particles sticking to the element to scatter, the present invention uses a means for applying a voltage to the element and causing the particles to scatter by utilizing Maxwell's stress, a means for electrically charging the particles and causing the particles to scatter by utilizing the Coulomb force, a means for introducing a gas into the vacuum chamber and causing the particles sticking to the element to scatter by causing a gas shock wave to hit the element, a means for heating the element and causing the particles to scatter by utilizing the thermal stress and thermophoretic force, or a means for causing the particles to scatter by applying mechanical vibrations to the element. The thus scattered particles are removed by carrying them in a gas flow in a relatively high pressure atmosphere.

14. 发明申请

US20060099457A1 Method of producing ceramic spray-coated member, program for conducting the method, storage medium and ceramic spray-coated member 审中-公开
标题翻译：陶瓷喷涂构件的制造方法，导电方法程序，储存介质和陶瓷喷涂构件
公开(公告)号：US20060099457A1
公开(公告)日：2006-05-11
申请号：US11266355
申请日：2005-11-04
申请人： Tsuyoshi Moriya , Hiroyuki Nakayama , Hiroshi Nagaike , Keigo Kobayashi , Kaname Yasuda
发明人： Tsuyoshi Moriya , Hiroyuki Nakayama , Hiroshi Nagaike , Keigo Kobayashi , Kaname Yasuda
IPC分类号： B32B9/00 , B32B19/00
CPC分类号： C23C16/4404
摘要： A ceramic spray-coated member capable of surely controlling adhesion and detachment of water is produced by spraying a given ceramic onto a surface of a base material, in which an organic matter adsorbed on a surface of the ceramic spray-coated member is removed and the surface of the ceramic spray-coated member is stabilized by chemically bonding to water.
摘要翻译：通过将给定的陶瓷喷涂到基材的表面上，除去吸附在陶瓷喷涂构件的表面上的有机物质，从而产生能够可靠地控制水的附着和分离的陶瓷喷涂构件，通过化学键合到水来稳定陶瓷喷涂构件的表面。

15. 发明申请

US20060011213A1 Substrate transfer device and cleaning method thereof and substrate processing system and cleaning method thereof 审中-公开
标题翻译：基板转印装置及其清洗方法及其基板处理系统及其清洗方法
公开(公告)号：US20060011213A1
公开(公告)日：2006-01-19
申请号：US11115357
申请日：2005-04-27
申请人： Tsuyoshi Moriya , Hiroyuki Nakayama
发明人： Tsuyoshi Moriya , Hiroyuki Nakayama
IPC分类号： B08B6/00 , B08B9/00
CPC分类号： H01L21/67028 , B08B7/0035 , H01L21/67742
摘要： A substrate transfer device includes an accommodating chamber for accommodating a substrate; a substrate transfer unit installed in the accommodating chamber for transferring the substrate; a gas exhaust unit for exhausting the accommodating chamber; and a gas introducing unit for introducing a gas into the accommodating chamber. The substrate transfer unit has a mounting subunit for mounting the substrate thereon, an arm subunit one end of which is connected to the mounting subunit to move the mounting subunit, and an electrode installed in the mounting subunit to which a voltage is applied, and a high voltage is applied to the electrode while the gas is being introduced into the accommodating chamber and the accommodating chamber is being exhausted.
摘要翻译：基板转印装置包括容纳基板的容纳室; 安装在所述容纳室中用于转移所述基板的基板传送单元; 用于排出容纳室的排气单元; 以及用于将气体引入容纳室的气体引入单元。基板转印单元具有用于在其上安装基板的安装子单元，其一端连接到安装子单元以移动安装子单元的臂子单元和安装在施加有电压的安装子单元中的电极，以及当气体被引入容纳室并且容纳室正在被排出时，高压被施加到电极。

16. 发明授权

US08449715B2 Internal member of a plasma processing vessel 有权
标题翻译：等离子体处理容器的内部构件
公开(公告)号：US08449715B2
公开(公告)日：2013-05-28
申请号：US12838096
申请日：2010-07-16
申请人： Kouji Mitsuhashi , Hiroyuki Nakayama , Nobuyuki Nagayama , Tsuyoshi Moriya , Hiroshi Nagaike
发明人： Kouji Mitsuhashi , Hiroyuki Nakayama , Nobuyuki Nagayama , Tsuyoshi Moriya , Hiroshi Nagaike
IPC分类号： C23C16/00 , C23C4/00 , C23F1/00 , H01L21/306 , H05H1/26
CPC分类号： H05H1/24 , C23C16/4404 , H01J37/32477 , Y10T428/249969 , Y10T428/24997 , Y10T428/31544 , Y10T428/31663 , Y10T428/31721
摘要： An internal member of a plasma processing vessel includes a base material and a film formed by thermal spraying of ceramic on a surface of the base material. The film is formed of ceramic which includes at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd. In addition, at least a portion of the film is sealed by a resin.
摘要翻译：等离子体处理容器的内部构件包括基材和通过在基材的表面上热喷涂陶瓷而形成的膜。该膜由包括选自B，Mg，Al，Si，Ca，Cr，Y，Zr，Ta，Ce和Nd中的至少一种元素的陶瓷形成。此外，膜的至少一部分被树脂密封。

17. 发明授权

US08231800B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US08231800B2
公开(公告)日：2012-07-31
申请号：US12359691
申请日：2009-01-26
申请人： Tsuyoshi Moriya , Hiroyuki Nakayama
发明人： Tsuyoshi Moriya , Hiroyuki Nakayama
IPC分类号： B44C1/22
CPC分类号： H01J37/32431 , H01J2237/022
摘要： There is provided a plasma processing apparatus including a plasma generating unit for generating a plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed. The plasma processing apparatus further includes a particle moving unit for electrostatically driving particles in a region above the substrate to be removed out of the region above the substrate in the processing chamber while the processing on the substrate is performed by using the plasma. In addition, there is provided a plasma processing method of a plasma processing apparatus including the steps of generating plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed; and performing the processing on the substrate by the plasma.
摘要翻译：提供了一种等离子体处理装置，其包括等离子体产生单元，用于在处理室中产生等离子体，其中对作为待处理对象的基板进行设定处理。等离子体处理装置还包括一个粒子移动单元，用于在通过使用等离子体进行基板上的处理的同时，在处理室中的基板上方的区域中，将基板上方的区域中的颗粒静电驱动。此外，提供了一种等离子体处理装置的等离子体处理方法，其包括以下步骤：在对作为被处理对象的基板进行设定处理的处理室中产生等离子体; 并通过等离子体对衬底进行处理。

18. 发明授权

US08206513B2 Method for cleaning elements in vacuum chamber and apparatus for processing substrates 有权
公开(公告)号：US08206513B2
公开(公告)日：2012-06-26
申请号：US12131803
申请日：2008-06-02
申请人： Tsuyoshi Moriya , Hiroshi Nagaike , Hiroyuki Nakayama
发明人： Tsuyoshi Moriya , Hiroshi Nagaike , Hiroyuki Nakayama
IPC分类号： B08B5/00 , B08B7/00
CPC分类号： H01L21/67028 , B08B3/12 , H01J37/32862 , H01L21/6831
摘要： To clean an element in a vacuum chamber by causing particles sticking to the element to scatter, the present invention uses a means for applying a voltage to the element and causing the particles to scatter by utilizing Maxwell's stress, a means for electrically charging the particles and causing the particles to scatter by utilizing the Coulomb force, a means for introducing a gas into the vacuum chamber and causing the particles sticking to the element to scatter by causing a gas shock wave to hit the element, a means for heating the element and causing the particles to scatter by utilizing the thermal stress and thermophoretic force, or a means for causing the particles to scatter by applying mechanical vibrations to the element. The thus scattered particles are removed by carrying them in a gas flow in a relatively high pressure atmosphere.

19. 发明授权

US08137473B2 Method for cleaning elements in vacuum chamber and apparatus for processing substrates 有权
标题翻译：用于清洁真空室中的元件的方法和用于处理衬底的装置
公开(公告)号：US08137473B2
公开(公告)日：2012-03-20
申请号：US10921947
申请日：2004-08-20
申请人： Tsuyoshi Moriya , Hiroshi Nagaike , Hiroyuki Nakayama
发明人： Tsuyoshi Moriya , Hiroshi Nagaike , Hiroyuki Nakayama
IPC分类号： B08B5/00 , B08B7/00
CPC分类号： H01L21/67028 , B08B3/12 , H01J37/32862 , H01L21/6831
摘要： To clean an element in a vacuum chamber by causing particles sticking to the element to scatter, the present invention uses a means for applying a voltage to the element and causing the particles to scatter by utilizing Maxwell's stress, a means for electrically charging the particles and causing the particles to scatter by utilizing the Coulomb force, a means for introducing a gas into the vacuum chamber and causing the particles sticking to the element to scatter by causing a gas shock wave to hit the element, a means for heating the element and causing the particles to scatter by utilizing the thermal stress and thermophoretic force, or a means for causing the particles to scatter by applying mechanical vibrations to the element. The thus scattered particles are removed by carrying them in a gas flow in a relatively high pressure atmosphere.
摘要翻译：为了通过使颗粒粘附到元件上来清洁真空室中的元件散射，本发明使用了一种用于向元件施加电压并且通过利用麦克斯韦应力使颗粒散射的装置，用于对颗粒进行充电的装置和通过利用库仑力使颗粒散射，用于将气体引入真空室中并通过使气体冲击波撞击元件而使颗粒粘附到元件上的装置，用于加热元件并引起通过利用热应力和热压力来散射的颗粒，或通过对元件施加机械振动来使颗粒散射的装置。通过在相对高压气氛中的气流中携带它们来除去如此散落的颗粒。

20. 发明申请

US20090134121A1 PLASMA PROCESSING APPARATUS AND METHOD 有权
标题翻译：等离子体加工设备和方法
公开(公告)号：US20090134121A1
公开(公告)日：2009-05-28
申请号：US12359691
申请日：2009-01-26
申请人： Tsuyoshi MORIYA , Hiroyuki Nakayama
发明人： Tsuyoshi MORIYA , Hiroyuki Nakayama
IPC分类号： H05H1/24 , C23C14/34 , B44C1/22 , C23C16/44
CPC分类号： H01J37/32431 , H01J2237/022
摘要： There is provided a plasma processing apparatus including a plasma generating unit for generating a plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed. The plasma processing apparatus further includes a particle moving unit for electrostatically driving particles in a region above the substrate to be removed out of the region above the substrate in the processing chamber while the processing on the substrate is performed by using the plasma. In addition, there is provided a plasma processing method of a plasma processing apparatus including the steps of generating plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed; and performing the processing on the substrate by the plasma.
摘要翻译：提供了一种等离子体处理装置，其包括等离子体产生单元，用于在处理室中产生等离子体，其中对作为待处理对象的基板进行设定处理。等离子体处理装置还包括一个粒子移动单元，用于在通过使用等离子体进行基板上的处理的同时，在处理室中的基板上方的区域中，将基板上方的区域中的颗粒静电驱动。此外，提供了一种等离子体处理装置的等离子体处理方法，其包括以下步骤：在对作为被处理对象的基板进行设定处理的处理室中产生等离子体; 并通过等离子体对衬底进行处理。

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