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    • 11. 发明授权
    • Testing apparatus for carrying out inspection of a semiconductor device
    • 用于对半导体器件进行检查的测试装置
    • US06952110B2
    • 2005-10-04
    • US10934046
    • 2004-09-03
    • Ryuji KohnoHideo MiuraMasatoshi KanamaruHiroya ShimizuHideyuki Aoki
    • Ryuji KohnoHideo MiuraMasatoshi KanamaruHiroya ShimizuHideyuki Aoki
    • G01R1/06G01R1/073G01R31/28H01L21/66G01R31/02
    • G01R1/07314
    • A method of manufacturing a semiconductor device has forming process for forming a semiconductor device on a major surface of a wafer, and testing process for testing defect of the semiconductor device. The testing process includes bringing a testing apparatus into contact with test electrodes of the semiconductor device. The testing apparatus has a contactor including probes that come into contact with the test electrodes of the semiconductor device, and secondary electrodes electrically connected to the probes and disposed on a surface opposite to the probes; and a substrate on which electrodes electrically communicated to the contactor by a conducting device. The conducting device is so formed that stress applied to the conducting device in the state where the probes are in contact with the test electrodes is larger than stress applied to the conducting device in the state where the probes are not in contact with the test electrodes.
    • 制造半导体器件的方法具有在晶片的主表面上形成半导体器件的形成工艺和用于测试半导体器件的缺陷的测试过程。 测试过程包括使测试设备与半导体器件的测试电极接触。 测试装置具有接触器,其包括与半导体器件的测试电极接触的探针,以及与探针电连接并设置在与探针相对的表面上的次级电极; 以及电极通过导电装置与接触器电连通的基板。 导电装置形成为在探针与测试电极接触的状态下施加到导电装置的应力大于在探针不与测试电极接触的状态下施加到导电装置的应力。
    • 15. 发明申请
    • Measuring method and apparatus of thin film thickness
    • 薄膜厚度的测量方法和装置
    • US20050073323A1
    • 2005-04-07
    • US10902132
    • 2004-07-30
    • Ryuji KohnoTatsuya NagataNaoki WataseMichihiro Watanabe
    • Ryuji KohnoTatsuya NagataNaoki WataseMichihiro Watanabe
    • G01B7/06G01R27/26H01L21/66
    • G01R27/2605
    • In an apparatus for measuring thickness of a thin film, which is formed through a conductor, preventing the measurement from an error due to the curve or bend on a substrate surface or a moving surface of a stage, but without necessity of a large-scaled facility, an electric filed is applied between a probe 10 and a stage 8, so as to obtain an electrostatic capacitance of the substrate 3, an electrostatic capacitance of an insulating film, which is formed between the substrate 3, and an electrostatic capacitance defined starting from the substrate 3 to the thin film 4. The electrostatic capacitance between the substrate 3 and the thin film 4 is measured at plural numbers of places covering over the entire surface of the thin film 4. The probe 10 is so supported that the contact load “P” comes to be constant, by the probe 10 onto the thin film 4. A contact area of the probe 10 between the thin film 4 is calculated out through a predetermined equation, assuming the load “P” is constant. From respective electrostatic capacitances and the contact area measured, a distribution of thickness of the thin film 4 over the entire area thereof.
    • 在用于测量通过导体形成的薄膜厚度的装置中,防止测量由于基板表面或台的移动表面上的曲线或弯曲引起的误差,而不需要大尺寸 在探针10和载物台8之间施加电场,以获得基板3的静电电容,形成在基板3之间的绝缘膜的静电电容与开始定义的静电电容 从基板3到薄膜4.在覆盖在薄膜4的整个表面上的多个位置处测量基板3和薄膜4之间的静电电容。探针10被支撑为接触负载 假定负载“P”是恒定的,则通过探针10将薄膜4固定在薄膜4上的探针10的接触区域。 从相应的静电电容和测量的接触面积,薄膜4的整个面积的厚度分布。
    • 17. 发明申请
    • Fuel cell and electronic device equipped with the same
    • 燃料电池和电子设备配备相同
    • US20060003196A1
    • 2006-01-05
    • US11171218
    • 2005-07-01
    • Ryuji KohnoTatsuya NagataMakoto Kitano
    • Ryuji KohnoTatsuya NagataMakoto Kitano
    • H01M8/00
    • H01M8/04201H01M8/04186H01M8/04208H01M8/1011Y02E60/523
    • It is an object of the present invention to provide a fuel cell which can supply a liquid fuel, without changing its composition, to every corner of the membrane electrode assemblies arranged two- dimensionally over a wide area, to generate power at a high efficiency. The fuel cell 10A comprises the membrane electrode assembly modules 20 which consume the liquid fuel 40 to generate power, and the fuel chamber 30 which holds the liquid fuel 40 inside and has the principal plane on which the membrane electrode assembly modules 20 are arranged, wherein the fuel chamber 30 is provided with the fuel injection hole 33 inside, through which the liquid fuel 40 is supplied under pressure from the outside, and the fuel supply gear 42 inside, which is located to come close to the membrane electrode assembly modules 20, the fuel supply gear 42 being provided, on the surface, with the fine pores 43 through which the liquid fuel 40 can pass.
    • 本发明的一个目的是提供一种燃料电池,其可以在不改变其组成的情况下将液体燃料供应到在广泛区域上二维布置的膜电极组件的每个角部,以高效率发电。 燃料电池10A包括消耗液体燃料40以产生动力的膜电极组件模块20和将液体燃料40保持在内部并且具有其上布置有膜电极组件模块20的主平面的燃料室30, 其中燃料室30内设有燃料喷射孔33,液体燃料40通过该燃料喷射孔33从外部受到压力供给,燃料供给齿轮42位于靠近膜电极组件模块20的位置 燃料供给齿轮42在表面上设置有液体燃料40可以通过的细孔43。
    • 20. 发明授权
    • Semiconductor inspection apparatus
    • 半导体检测仪器
    • US06714030B2
    • 2004-03-30
    • US10390412
    • 2003-03-18
    • Ryuji KohnoHideo MiuraYoshishige EndoMasatoshi KanamaruAtsushi HosoganeHideyuki AokiNaoto Ban
    • Ryuji KohnoHideo MiuraYoshishige EndoMasatoshi KanamaruAtsushi HosoganeHideyuki AokiNaoto Ban
    • G01R3102
    • H01L22/32G01R1/06711G01R1/06738G01R1/07314G01R3/00H01L23/13H01L2924/0002H01L2924/13091H01L2924/00
    • A semiconductor inspection apparatus which is possible to inspect a plurality of semiconductor devices collectively at one time, which has conventionally been difficult because of precision or the like of probes. A method of manufacturing the semiconductor inspection apparatus comprises the steps of forming a cover film on a surface of the silicon substrate and forming a plurality of probes of a polygonal cone shape or a circular cone shape through etching after patterning by photolithography, after the cover film is removed, again forming a cover film on the surface of the silicon substrate and forming a beam or a diaphragm for each probe through etching after patterning by photolithography, after the cover film is removed, again forming a cover film on the surface of the silicon substrate and forming a through hole corresponding to the probe through etching after patterning by photolithography, and after the cover film is removed, forming an insulating film on the surface of the silicon substrate, forming a metal film on a surface of the insulating film, and forming a wiring lead through etching after patterning by photolithography.
    • 可以一次共同地检查多个半导体器件的半导体检查装置,由于探针的精度等,以前难以进行。 一种制造半导体检查装置的方法包括以下步骤:在硅衬底的表面上形成覆盖膜,并通过光刻图案化之后通过蚀刻形成多个锥形或圆锥形的多个探针, 被去除,再次在硅衬底的表面上形成覆盖膜,并且通过光刻在图案化之后通过蚀刻形成用于每个探针的光束或隔膜,在除去覆盖膜之后,再次在硅表面上形成覆盖膜 在通过光刻图案化之后通过蚀刻形成与探针对应的通孔,并且在除去覆盖膜之后,在硅衬底的表面上形成绝缘膜,在绝缘膜的表面上形成金属膜,以及 通过光刻在图案化之后通过蚀刻形成布线引线。