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11. 发明授权

US07843131B2 Light emitting device and method for manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07843131B2
公开(公告)日：2010-11-30
申请号：US12049690
申请日：2008-03-17
申请人： Masahiro Konishi , Makoto Agatani , Toshio Hata
发明人： Masahiro Konishi , Makoto Agatani , Toshio Hata
IPC分类号： H01J1/62
CPC分类号： H01L33/502 , F21K9/00 , F21K9/20 , F21K9/232 , F21V23/002 , F21Y2101/00 , F21Y2105/10 , F21Y2115/10 , H01L24/45 , H01L25/0753 , H01L33/32 , H01L33/36 , H01L33/38 , H01L33/56 , H01L33/60 , H01L33/62 , H01L33/641 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45169 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01L2924/01015 , H01L2924/01047 , H01L2924/01068 , H01L2924/01087 , H01L2924/09701 , H01L2924/12041 , H01L2924/181 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： By using a light emitting device including an insulating substrate and a light emitting unit formed on the insulating substrate, the light emitting unit including: a plurality of linear wiring patterns disposed on the insulating substrate in parallel with one another, a plurality of light emitting elements that are mounted between the wiring patterns while being electrically connected to the wiring patterns, and a sealing member for sealing the light emitting elements, as well as a method for manufacturing thereof, it becomes possible to provide a light emitting device that achieves sufficient electrical insulation and has simple manufacturing processes so that it can be manufactured at a low cost, and a method for manufacturing the same.
摘要翻译：通过使用包括绝缘基板和形成在绝缘基板上的发光单元的发光装置，发光单元包括：彼此平行地布置在绝缘基板上的多个线性布线图案，多个发光元件安装在布线图案之间，同时电连接到布线图案，以及用于密封发光元件的密封构件及其制造方法，可以提供实现足够的电绝缘的发光器件并且具有简单的制造工艺，从而可以以低成本制造它们及其制造方法。

12. 发明授权

US07538360B2 Nitride-based semiconductor light-emitting device and manufacturing method thereof 有权
标题翻译：氮化物系半导体发光元件及其制造方法
公开(公告)号：US07538360B2
公开(公告)日：2009-05-26
申请号：US10413856
申请日：2003-04-14
申请人： Mayuko Fudeta , Toshio Hata
发明人： Mayuko Fudeta , Toshio Hata
IPC分类号： H01L27/15
CPC分类号： H01L33/42 , H01L27/156 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A nitride-based semiconductor light-emitting device and a manufacturing method thereof are provided. The nitride-based light-emitting device includes a first conductivity type nitride-based semiconductor layer, a light-emitting layer and a second conductivity type nitride-based semiconductor layer, that are successively layered above a translucent base. A first conductivity type electrode layer is electrically connected to the first conductivity type nitride-based semiconductor layer, and a second conductivity type electrode layer is electrically connected to the second conductivity type nitride-based semiconductor layer.
摘要翻译：提供一种氮化物系半导体发光元件及其制造方法。氮化物系发光器件包括在半透明基底上连续层叠的第一导电型氮化物基半导体层，发光层和第二导电型氮化物基半导体层。第一导电型电极层与第一导电型氮化物系半导体层电连接，第二导电型电极层与第二导电型氮化物系半导体层电连接。

13. 发明申请

US20090108282A1 CHIP-TYPE LED AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：芯片型LED及其制造方法
公开(公告)号：US20090108282A1
公开(公告)日：2009-04-30
申请号：US12260742
申请日：2008-10-29
申请人： Makoto MATSUDA , Toshio Hata
发明人： Makoto MATSUDA , Toshio Hata
IPC分类号： H01L33/00
CPC分类号： H01L33/486 , H01L33/508 , H01L33/54 , H01L33/62 , H01L2224/45144 , H01L2224/48227 , H01L2224/48228 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： In a chip-type LED according to an embodiment of the present invention, a first recess hole for mounting an LED chip and a second recess hole for connecting a fine metal wire are formed in an insulating substrate, a metal sheet serving as a first wiring pattern is formed at a portion that includes the first recess hole, a metal sheet serving as a second wiring pattern is formed at a portion that includes the second recess hole, an LED chip is mounted on the metal sheet within the first recess hole, the LED chip is electrically connected to the metal sheet within the second recess hole via a fine metal wire, the LED chip including the first recess hole and the fine metal wire including the second recess hole are encapsulated in a first transparent resin that contains a fluorescent material, a surface of the insulating substrate including the first transparent resin is encapsulated in a second transparent resin.
摘要翻译：在根据本发明的实施例的芯片型LED中，在绝缘基板中形成用于安装LED芯片的第一凹部孔和用于连接细金属丝的第二凹部孔，用作第一布线在包括第一凹槽的部分形成图案，在包括第二凹槽的部分形成用作第二布线图案的金属片，在第一凹槽内的金属片上安装LED芯片， LED芯片通过细金属线电连接到第二凹槽内的金属片，包括第一凹部孔和包括第二凹部孔的细金属线的LED芯片封装在包含荧光材料的第一透明树脂中包含第一透明树脂的绝缘基板的表面被封装在第二透明树脂中。

14. 发明申请

US20060267033A1 Nitride-based semiconductor light emitting device and manufacturing method thereof 有权
标题翻译：氮化物系半导体发光元件及其制造方法
公开(公告)号：US20060267033A1
公开(公告)日：2006-11-30
申请号：US11494845
申请日：2006-07-27
申请人： Norikatsu Koide , Toshio Hata , Mayuko Fudeta , Daigaku Kimura
发明人： Norikatsu Koide , Toshio Hata , Mayuko Fudeta , Daigaku Kimura
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/38 , H01L33/42
摘要： The nitride-based semiconductor light-emitting device and manufacturing method thereof are disclosed: the nitride-based semiconductor light-emitting device includes a reflective layer formed on a support substrate, a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer, wherein irregularities are formed on a light extracting surface located above the n-type nitride-based semiconductor layer.
摘要翻译：公开了氮化物系半导体发光元件及其制造方法：氮化物系半导体发光元件具备形成在支撑基板上的反射层，p型氮化物系半导体层，发光层以及依次形成在所述反射层上的n型氮化物系半导体层，其中在位于所述n型氮化物基半导体层上方的光提取面上形成凹凸。

15. 发明授权

US06936861B2 Nitride-based compound semiconductor light-emitting element and method for producing same 失效
标题翻译：氮化物系化合物半导体发光元件及其制造方法
公开(公告)号：US06936861B2
公开(公告)日：2005-08-30
申请号：US10309942
申请日：2002-12-03
申请人： Toshio Hata , Mayuko Fudeta
发明人： Toshio Hata , Mayuko Fudeta
IPC分类号： H01L33/42 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/38 , H01L33/62 , H01L33/00
CPC分类号： H01L33/387 , H01L24/05 , H01L33/32 , H01L33/42 , H01L2224/02166 , H01L2224/04042 , H01L2224/05552 , H01L2224/05556 , H01L2224/45144 , H01L2224/48463 , H01L2933/0016 , H01L2924/00
摘要： A nitride-based compound semiconductor light-emitting element of the present invention includes: a P-type electrode; a P-type nitride-based compound semiconductor layer disposed on the P-type electrode; a light-emitting layer disposed on the P-type nitride-based compound semiconductor layer and emitting light; a nitride-based compound semiconductor layer disposed on the light-emitting layer and transmitting light emitted by the light-emitting layer therethrough; a buffer layer disposed on the nitride-based compound semiconductor layer and transmitting the light therethrough, wherein the buffer layer is made of a nitride-based compound semiconductor material and a trench is formed in the buffer layer so as to expose portions of the nitride-based compound semiconductor layer; and an N-type electrode disposed so as to cover the trench and electrically connected to the nitride-based compound semiconductor layer.
摘要翻译：本发明的氮化物系化合物半导体发光元件包括：P型电极; 设置在P型电极上的P型氮化物系化合物半导体层; 设置在P型氮化物系化合物半导体层上并发光的发光层; 设置在所述发光层上的氮化物系化合物半导体层，透射由所述发光层发射的光; 缓冲层，其设置在所述氮化物系化合物半导体层上并透过所述氮化物系化合物半导体层，其中，所述缓冲层由氮化物系化合物半导体材料形成，并且在所述缓冲层中形成沟槽，基复合半导体层; 以及N型电极，被设置为覆盖沟槽并与氮化物基化合物半导体层电连接。

16. 发明申请

US20050051788A1 Nitride-based semiconductor light-emitting device and manufacturing method thereof 有权
标题翻译：氮化物系半导体发光元件及其制造方法
公开(公告)号：US20050051788A1
公开(公告)日：2005-03-10
申请号：US10146412
申请日：2002-05-14
申请人： Masaki Tatsumi , Toshio Hata , Mayuko Fudeta
发明人： Masaki Tatsumi , Toshio Hata , Mayuko Fudeta
IPC分类号： H01L21/28 , H01L33/32 , H01L33/40 , H01L33/56 , H01L33/62 , H01S5/02 , H01S5/022 , H01S5/042 , H01S5/22 , H01S5/223 , H01S5/323 , H01L33/00
CPC分类号： H01L33/32 , H01L24/32 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/351 , H01S5/0202 , H01S5/02244 , H01S5/0425 , H01S5/2201 , H01S5/2231 , H01S5/32341 , H01L2924/00014 , H01L2924/00
摘要： A nitride-based semiconductor light-emitting device includes a light-emitting element having an n-GaN substrate and a nitride-based semiconductor multilayer film formed on the n-GaN substrate. The n-GaN substrate of the light-emitting element is fixed to a mount surface. The n-GaN substrate has one surface with the nitride-based semiconductor multilayer film formed thereon and an opposite surface with a metal layer and an ohmic electrode formed thereon. The metal layer contains a first metal and a second metal and the ohmic electrode is formed of the second metal. The adhesion between the ohmic electrode and the n-GaN substrate is thus improved. Accordingly, the semiconductor light-emitting device which is highly reliable with respect to the thermal strain from the mount surface can be provided.
摘要翻译：氮化物系半导体发光器件包括具有n-GaN衬底的发光元件和形成在n-GaN衬底上的氮化物基半导体多层膜。发光元件的n-GaN衬底固定到安装表面。 n-GaN衬底具有在其上形成有氮化物基半导体多层膜的一个表面，并且与其上形成有金属层和欧姆电极的相反表面。金属层包含第一金属和第二金属，欧姆电极由第二金属形成。因此，提高了欧姆电极和n-GaN衬底之间的粘合性。因此，可以提供相对于来自安装面的热应变高度可靠的半导体发光装置。

17. 发明授权

US06417525B1 Semiconductor light emitter with current block region formed over the semiconductor layer and electrode connection portion for connecting the pad electrode to the translucent electrode 有权
标题翻译：具有形成在半导体层上的电流块区域的半导体发光体和用于将焊盘电极连接到透光性电极的电极连接部分
公开(公告)号：US06417525B1
公开(公告)日：2002-07-09
申请号：US09381563
申请日：2000-02-01
申请人： Toshio Hata
发明人： Toshio Hata
IPC分类号： H01L3300
CPC分类号： H01L33/42 , H01L33/145 , H01L33/32 , H01L33/38
摘要： A semiconductor light emitter characterized by including a semiconductor layer for providing an electric current block region and an electric current injection region on a surface thereof, an electric current block layer formed on the semiconductor layer for defining the electric current block region, a pad electrode formed on the electric current block layer, and a light-transmissive electrode formed on the semiconductor layer for defining the electric current injection region, wherein the pad electrode has an electrode connection portion for connection with the light-transmissive electrode. Such a semiconductor light emitter can prevent failure in electric current introduction into the light emitter owing to disconnection of the light-transmissive electrode and increase of the resistance of the light-transmissive electrode. It is possible to produce light emitters with good behavior in a good yield.
摘要翻译：一种半导体发光体，其特征在于包括在其表面上设置电流阻挡区域和电流注入区域的半导体层，形成在用于限定电流阻挡区域的半导体层上的电流阻挡层，形成的焊盘电极以及形成在半导体层上的用于限定电流注入区域的透光电极，其中焊盘电极具有用于与透光电极连接的电极连接部分。这样的半导体发光体能够防止由于透光性电极的断开而引起的发光体的电流的故障，透光电极的电阻的增加。可以以良好的产率生产具有良好行为的发光体。

18. 发明授权

US06369506B1 Light emitting apparatus and method for mounting light emitting device 失效
标题翻译：发光装置及其发光装置的安装方法
公开(公告)号：US06369506B1
公开(公告)日：2002-04-09
申请号：US09448899
申请日：1999-11-29
申请人： Toshio Hata
发明人： Toshio Hata
IPC分类号： H01S162
CPC分类号： H01L33/62 , H01L2224/16 , H01L2224/16245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49107 , H01L2924/01039 , H01L2924/12041 , H01S5/02244 , H01L2924/00014 , H01L2924/00
摘要： According to one aspect of the present invention, there is provided a light emitting apparatus including: a light emitting device for emitting light; and a first lead frame and a second lead frame on which the light emitting device is mounted. In this apparatus, the light emitting device includes: a substrate which is light transmissive, the substrate defining an output surface; a semiconductor layer formed on the substrate which includes a light emitting layer made of a nitride semiconductor; a first electrode provided lower than a plane running parallel through the light emitting layer with respect to the substrate; and a second electrode provided higher than the plane running parallel through the light emitting layer with respect to the substrate; the first lead frame includes a first lead pad section to which the first electrode is connected; the second lead frame includes a second lead pad section to which the second electrode is connected; at least one of the first and second lead frames includes a die pad section on which the substrate is mounted; and the die pad section does not substantially cover the first output surface.
摘要翻译：根据本发明的一个方面，提供了一种发光装置，包括：发光装置; 以及安装有发光装置的第一引线框架和第二引线框架。在该装置中，发光装置包括：基板，其是透光的，所述基板限定输出表面; 形成在基板上的半导体层，其包括由氮化物半导体构成的发光层; 设置在相对于所述基板平行于所述发光层延伸的平面的第一电极; 以及第二电极，其设置成高于平行于所述发光层相对于所述衬底延伸的平面; 第一引线框架包括第一引线焊盘部分，第一电极连接到第一引线焊盘部分; 所述第二引线框架包括连接所述第二电极的第二引线焊盘部分; 所述第一引线框架和所述第二引线框架中的至少一个包括其上安装所述基板的管芯焊盘部分; 并且芯片焊盘部分基本上不覆盖第一输出表面。

19. 发明授权

US06320209B1 Epitaxial lateral overgrowth of gallium nitride based semiconductive oxide selective growth mask and method for fabricating the same 有权
标题翻译：氮化镓基半导体氧化物选择性生长掩模的外延横向过度生长及其制造方法
公开(公告)号：US06320209B1
公开(公告)日：2001-11-20
申请号：US09301152
申请日：1999-04-28
申请人： Toshio Hata , Shigetoshi Ito
发明人： Toshio Hata , Shigetoshi Ito
IPC分类号： H01L3300
CPC分类号： H01L33/24 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L33/007 , H01L33/0075 , H01L33/32 , H01S5/0213 , H01S5/0421 , H01S5/2206 , H01S5/2224 , H01S5/2232 , H01S5/2272 , H01S5/34333 , H01S2301/173 , H01S2304/04 , H01S2304/12
摘要： A semiconductor light emitting device includes: a substrate; a contact layer made of a gallium nitride based compound semiconductor formed on the substrate; a stripe-shaped conductive selective growth mask formed above the contact layer; and a layered structure made of a gallium nitride based compound semiconductor. The layered structure includes at least a pair of cladding layers, formed on the conductive selective growth mask, and an active layer, including at least one layer, sandwiched by the cladding layers.
摘要翻译：一种半导体发光器件，包括：衬底; 形成在基板上的由氮化镓系化合物半导体构成的接触层; 形成在接触层上方的条状导电选择生长掩模; 以及由氮化镓系化合物半导体构成的层叠结构。层状结构包括形成在导电性选择性生长掩模上的至少一对包覆层，以及包含至少一层被有源层夹持的有源层。

20. 发明授权

US5780876A Compound semiconductor light emitting device and manufacturing method thereof 失效
标题翻译：化合物半导体发光器件及其制造方法
公开(公告)号：US5780876A
公开(公告)日：1998-07-14
申请号：US635648
申请日：1996-04-22
申请人： Toshio Hata
发明人： Toshio Hata
IPC分类号： H01L33/00 , H01L33/06 , H01L33/12 , H01L33/32 , H01S5/00 , H01S5/223 , H01S5/323 , H01S5/343 , H01L29/205
CPC分类号： H01L33/32 , H01L33/007 , H01S5/2231 , H01S5/32341 , Y10S148/095
摘要： After the active layer including indium is formed, the evaporation preventing layer is formed at a temperature which does not cause liberation of indium. The p-type Al.sub.x Ga.sub.1-x N (0.ltoreq.X.ltoreq.1) or the like is used for the evaporation preventing layer. Increasing the substrate temperature to as high as 1020.degree. C. for forming the upper cladding layer does not cause liberation of indium from the active layer because the evaporation preventing layer is provided. As a result, the composition ratio of indium can be easily controlled and the high-quality active layer and the high-quality interface between the active layer and the upper cladding layer can be provided.
摘要翻译：在形成包含铟的有源层之后，在不会导致铟释放的温度下形成防蒸镀层。对于蒸发防止层使用p型Al x Ga 1-x N（0

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