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11. 发明授权

US5234527A Liquid level detecting device and a processing apparatus 失效
标题翻译：液面检测装置和处理装置
公开(公告)号：US5234527A
公开(公告)日：1993-08-10
申请号：US731473
申请日：1991-07-17
申请人： Toshihisa Nozawa , Junichi Arami , Yukimasa Yoshida , Keiji Horioka
发明人： Toshihisa Nozawa , Junichi Arami , Yukimasa Yoshida , Keiji Horioka
IPC分类号： C23C14/54 , B01J3/00 , C23C16/46 , C23F4/00 , G01F23/22 , G01F23/24 , H01L21/302 , H01L21/3065
CPC分类号： B01J3/002 , G01F23/22 , H01J2237/2001
摘要： A liquid level detecting device used in a vacuum processing apparatus, the device comprising a liquid container section, an inlet pipe for liquid supply connected to the liquid container section, and outlet pipe for discharging the liquid when the liquid in the liquid container section overflows a predetermined liquid level, a temperature measurement terminal provided in the liquid container section, for detecting the temperature of the liquid in the container section, means for heating or cooling the temperature measurement terminal, and a liquid level detecting section for detecting the surface level of the liquid on the basis of the difference between two temperatures of the liquid measured when the heating or cooling means is in contact with the liquid and when not in contact.
摘要翻译：一种用于真空处理装置的液位检测装置，该装置包括液体容器部分，与液体容器部分连接的液体供给入口管，以及当液体容器部分中的液体溢出时排出液体的出口管预定液位，设置在液体容器部分中的用于检测容器部分中的液体的温度的温度测量端子，用于加热或冷却温度测量端子的装置，以及液位检测部分，用于检测基于当加热或冷却装置与液体接触时和当不接触时测量的液体的两个温度之间的差异的液体。

12. 发明申请

US20130344244A1 METHOD FOR CLEANING GAS CONVEYING DEVICE, AND METHOD AND REACTION DEVICE FOR FILM GROWTH 审中-公开
标题翻译：清洁气体输送装置的方法，以及用于膜生长的方法和反应装置
公开(公告)号：US20130344244A1
公开(公告)日：2013-12-26
申请号：US14003787
申请日：2012-03-23
申请人： Zhiyou Du , Junichi Arami , Yijun Sun
发明人： Zhiyou Du , Junichi Arami , Yijun Sun
IPC分类号： C23C16/44
CPC分类号： C23C16/4407 , B08B1/04
摘要： A method for cleaning a gas conveying device in a film growth reaction chamber is provided. The gas conveying device comprises a gas conveying surface for releasing reaction gas to the film growth reaction chamber. The film growth reaction chamber comprises a support device. The method comprises that a) a cleaning device is provided and separably installed on the support device, said cleaning device comprising a surface which is facing to the gas conveying surface and on which multiple scraping structures are distributed; b) a rotation drive device is provided, which is connected to the support device and can selectively drive the support device to rotate; c) the position of the cleaning device is adjusted so that the scraping structures contact with, at least in part, the gas conveying surface of the gas conveying device; and d) the rotation drive device is rotated to drive the cleaning device to rotate, and the scraping structures contact the gas conveying surface and remove attachments from the gas conveying surface.
摘要翻译：提供一种清洗膜生长反应室中的气体输送装置的方法。气体输送装置包括用于将反应气体释放到膜生长反应室的气体输送表面。膜生长反应室包括支撑装置。该方法包括：a）提供清洁装置并可分离地安装在支撑装置上，所述清洁装置包括面向气体输送表面并在其上分布有多个刮削结构的表面; b）提供旋转驱动装置，其连接到支撑装置并且可以选择性地驱动支撑装置旋转; c）调节清洁装置的位置，使得刮擦结构至少部分地与气体输送装置的气体输送表面接触; 以及d）旋转驱动装置旋转以驱动清洁装置旋转，并且刮削结构接触气体输送表面并从气体输送表面移除附件。

13. 发明授权

US06764575B1 Magnetron plasma processing apparatus 有权
标题翻译：磁控管等离子体处理装置
公开(公告)号：US06764575B1
公开(公告)日：2004-07-20
申请号：US10069512
申请日：2002-03-04
申请人： Tomomi Yamasaki , Hidetoshi Kimura , Junichi Arami , Hiroo Ono , Akira Koshiishi , Koji Miyata
发明人： Tomomi Yamasaki , Hidetoshi Kimura , Junichi Arami , Hiroo Ono , Akira Koshiishi , Koji Miyata
IPC分类号： C23C1434
CPC分类号： H01J37/3266 , H01J37/3408
摘要： When a substrate 30 is to be subjected to a magnetron plasma process, a dipole ring magnet 21 is provided, in which a large number of anisotropic segment magnets 22 are arranged in a ring-like shape around the outer wall of a chamber 1. A magnetic field gradient, wherein the magnetic field strength decreases from the E pole side toward the W pole side in a direction perpendicular to a magnetic field direction B, is formed in a plane perpendicular to the direction of an electric field between a pair of electrodes separated from each other. The anisotropic segment magnets have a first section a including anisotropic segment magnets arranged in the vicinity of a region A located outside an E pole side end of the process substrate with an N pole thereof being directed toward this region, and a second portion b including anisotropic segment magnets arranged with an S pole thereof being directed toward this region, to locally increase the magnetic field strengths of the first and second regions.
摘要翻译：当对基板30进行磁控管等离子体处理时，设置偶极环磁体21，其中大量的各向异性磁体22围绕室1的外壁排列成环状。其磁场强度在与磁场方向B垂直的方向从E极侧朝向W极侧的磁场强度形成在与分离的一对电极之间的电场方向垂直的面内从彼此。各向异性区段磁体具有第一区段a，其包括各向异性区段磁体，其布置在位于处理衬底的E极侧端外侧的区域A的附近，其N极指向该区域，第二部分b包括各向异性将其S极布置的段磁体指向该区域，以局部地增加第一和第二区域的磁场强度。

14. 发明授权

US5665260A Ceramic electrostatic chuck with built-in heater 失效
标题翻译：陶瓷静电吸盘内置加热器
公开(公告)号：US5665260A
公开(公告)日：1997-09-09
申请号：US364196
申请日：1994-12-27
申请人： Nobuo Kawada , Shoji Kano , Koji Hagiwara , Nobuo Arai , Junichi Arami , Kenji Ishikawa
发明人： Nobuo Kawada , Shoji Kano , Koji Hagiwara , Nobuo Arai , Junichi Arami , Kenji Ishikawa
IPC分类号： B23Q3/15 , C04B37/00 , C04B41/89 , H01L21/027 , H01L21/265 , H01L21/324 , H01L21/683 , H01L23/34 , H02N13/00 , H05B3/14 , H05B3/68 , H05B3/44
CPC分类号： H01L23/345 , H01L21/6833 , H05B3/143 , H01L2924/0002
摘要： A ceramic electrostatic chuck with a built-in heater having electrodes of an electroconductive ceramic bonded to a surface of a supporting substrate of an electrically conducting ceramic. A heat generating layer of an electroconductive ceramic is bonded to the other surface of the supporting substrate and a covering layer of an electrically insulating ceramic is provided thereon. Each of the supporting substrate, electrode for the electrostatic chuck and heat generating layer has a surface roughness Rmax of 5 .mu.m or larger.
摘要翻译：一种具有内置加热器的陶瓷静电卡盘，其具有与导电陶瓷的支撑基板的表面结合的导电陶瓷电极。导电陶瓷的发热层与支撑基板的另一个表面接合，并且在其上提供电绝缘陶瓷的覆盖层。支撑基板，静电卡盘和发热层用电极的表面粗糙度Rmax为5μm以上。

15. 发明授权

US5240556A Surface-heating apparatus and surface-treating method 失效
标题翻译：表面处理装置和表面处理方法
公开(公告)号：US5240556A
公开(公告)日：1993-08-31
申请号：US893018
申请日：1992-06-03
申请人： Yoshio Ishikawa , Junichi Arami , Towl Ikeda , Teruo Iwata
发明人： Yoshio Ishikawa , Junichi Arami , Towl Ikeda , Teruo Iwata
IPC分类号： C23C16/54 , H01L21/00
CPC分类号： H01L21/67207 , C23C16/54 , H01L21/67069 , H01L21/67115
摘要： According to this invention, a surface-treating apparatus capable of etching an object to be treated with high accuracy, suppressing discharging of a harmful gas deposited on the etched object in the air, and preventing the surface of the object from deposition/ attachment of reaction products and droplets is disclosed. The surface-treating apparatus includes a first process chamber for etching a loaded object to be treated by an activated etching gas, an exhausting member for setting the first process chamber at a low pressure, a cooling means for cooling the object loaded in the first process chamber, a second process chamber in which the object etched by the first process chamber is loaded, an exhausting member for setting the second process chamber at a low pressure, and an heating member for annealing the object loaded in the second process chamber.
摘要翻译：根据本发明，能够高精度地蚀刻被处理物的表面处理装置，抑制在空气中沉积在被蚀刻物上的有害气体的排出，防止物体的表面沉积/附着反应产品和液滴被公开。表面处理装置包括用于蚀刻被激活的蚀刻气体处理的被加载物体的第一处理室，用于将第一处理室设置在低压的排出构件，用于冷却在第一处理中加载的物体的冷却装置第二处理室，其中装载有由第一处理室蚀刻的物体，用于将第二处理室设置在低压的排气构件，以及用于对装载在第二处理室中的物体进行退火的加热构件。

16. 发明授权

US07481902B2 Substrate processing apparatus and method, high speed rotary valve and cleaning method 失效
标题翻译：基板加工装置及方法，高速旋转阀及清洗方法
公开(公告)号：US07481902B2
公开(公告)日：2009-01-27
申请号：US10946511
申请日：2004-09-20
申请人： Hiroshi Shinriki , Junichi Arami
发明人： Hiroshi Shinriki , Junichi Arami
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： H01L21/0228 , B08B7/0035 , C23C16/4405 , C23C16/4412 , C23C16/45504 , C23C16/45536 , C23C16/45548 , F16K5/0407 , F16K5/0414 , F16K51/02 , H01L21/02277 , H01L21/31691
摘要： A substrate processing apparatus includes a processing vessel provided with a stage holding thereon a substrate to be processed and evacuated at an evacuation port, and a source gas supplying system that supplies plural source gases to the processing vessel separately in the form of a laminar flow, wherein the evacuation port has a slit-form shape extending in a direction generally intersecting perpendicularly to a direction of the laminar flow, the evacuation port is engaged with a valve having a valve body formed with a slit-form opening corresponding to the slit-form shape of the evacuation port, the slit-form opening being provided so as to cause a displacement with respect to the evacuation port in a direction generally intersecting perpendicularly to an extending direction of the evacuation port, the valve changing a degree of valve opening thereof via displacement of said slit-form opening.
摘要翻译：基板处理装置包括：处理容器，其设置有在其上排出的待处理和抽真空基板的台，以及以层流形式分别供给到处理容器中的多个源气体的源气体供给系统，其特征在于，所述排气口具有沿着与所述层流方向大致垂直的方向延伸的狭缝形状，所述排气口与具有形成有与所述狭缝形状对应的狭缝状开口的阀体的阀卡合排气口的形状，狭缝形状的开口被设置成在垂直于抽空口的延伸方向大致相交的方向上引起相对于排气口的位移，阀改变其开阀程度，经由所述狭缝形开口的位移。

17. 发明申请

US20050074983A1 Substrate processing apparatus and substrate processing method, high speed rotary valve, and cleaning method 失效
标题翻译：基板加工装置和基板处理方法，高速旋转阀和清洗方法
公开(公告)号：US20050074983A1
公开(公告)日：2005-04-07
申请号：US10946511
申请日：2004-09-20
申请人： Hiroshi Shinriki , Junichi Arami
发明人： Hiroshi Shinriki , Junichi Arami
IPC分类号： H01L21/31 , B08B7/00 , C23C16/44 , C23C16/455 , F16K5/04 , F16K51/02 , H01L21/316 , C23C16/00
CPC分类号： H01L21/0228 , B08B7/0035 , C23C16/4405 , C23C16/4412 , C23C16/45504 , C23C16/45536 , C23C16/45548 , F16K5/0407 , F16K5/0414 , F16K51/02 , H01L21/02277 , H01L21/31691
摘要： A substrate processing apparatus includes a processing vessel provided with a stage holding thereon a substrate to be processed and evacuated at an evacuation port, and a source gas supplying system that supplies plural source gases to the processing vessel separately in the form of a laminar flow, wherein the evacuation port has a slit-form shape extending in a direction generally intersecting perpendicularly to a direction of the laminar flow, the evacuation port is engaged with a valve having a valve body formed with a slit-form opening corresponding to the slit-form shape of the evacuation port, the slit-form opening being provided so as to cause a displacement with respect to the evacuation port in a direction generally intersecting perpendicularly to an extending direction of the evacuation port, the valve changing a degree of valve opening thereof via displacement of said slit-form opening.
摘要翻译：基板处理装置包括：处理容器，其设置有在其上排出的待处理和抽真空基板的台，以及以层流形式分别供给到处理容器中的多个源气体的源气体供给系统，其特征在于，所述排气口具有沿着与所述层流方向大致垂直的方向延伸的狭缝形状，所述排气口与具有形成有与所述狭缝形状对应的狭缝状开口的阀体的阀卡合排气口的形状，狭缝形状的开口被设置成在垂直于抽空口的延伸方向大致相交的方向上引起相对于排气口的位移，阀改变其开阀程度，经由所述狭缝形开口的位移。

18. 发明授权

US6014943A Plasma process device 失效
标题翻译：等离子体处理装置
公开(公告)号：US6014943A
公开(公告)日：2000-01-18
申请号：US928026
申请日：1997-09-11
申请人： Junichi Arami , Hiroo Ono , Tomomi Kondo , Koji Miyata
发明人： Junichi Arami , Hiroo Ono , Tomomi Kondo , Koji Miyata
IPC分类号： H01J37/32 , C23C16/00
CPC分类号： H01J37/32082 , H01J37/32623 , H01J37/3266
摘要： A plasma process device includes a process vessel having a plasma generating area therein, a susceptor provided in the process vessel for supporting a substrate having a process surface, and a gas inlet means for introducing a process gas into the plasma generating area. A dipole ring magnet is arranged around the outer periphery of the process vessel, for generating a magnetic field having a magnetic line of force in the plasma generating area, so that a plasma of the process gas is generated in the plasma generating area. The dipole ring magnet has a plurality of anisotropic segment magnets arranged on an oval track, which are cylindrical permanent magnets having the same shape and size and magnetized in the diameter direction.
摘要翻译：等离子体处理装置包括其中具有等离子体产生区域的处理容器，设置在处理容器中的基座，用于支撑具有工艺表面的衬底，以及用于将工艺气体引入等离子体产生区域的气体入口装置。偶极环磁体布置在处理容器的外周周围，用于在等离子体产生区域中产生具有磁力线的磁场，从而在等离子体产生区域中产生处理气体的等离子体。偶极环磁体具有设置在椭圆形轨道上的多个各向异性分段磁体，它们是具有相同形状和尺寸的圆柱形永磁体，并且在直径方向上被磁化。

19. 发明授权

US5904872A Heating device, method of manufacturing the same, and processing apparatus using the same 失效
标题翻译：加热装置及其制造方法以及使用其的加工装置
公开(公告)号：US5904872A
公开(公告)日：1999-05-18
申请号：US534312
申请日：1995-09-27
申请人： Junichi Arami , Kenji Ishikawa , Harunori Ushikawa , Isao Yanagisawa , Nobuo Kawada , Hiroshi Mogi
发明人： Junichi Arami , Kenji Ishikawa , Harunori Ushikawa , Isao Yanagisawa , Nobuo Kawada , Hiroshi Mogi
IPC分类号： C23C16/46 , H01L21/00 , H05B3/26 , H05B3/28 , H05B3/68 , C23C16/00 , H05B3/00
CPC分类号： C23C16/466 , C23C16/46 , H01L21/67103 , H05B3/265 , H05B3/283 , Y10T29/49083
摘要： A heating device is formed by a heating plate formed of silica and having a heating surface for heating an object to be heated, a heating element having a predetermined pattern and fixed to a surface opposing the heating surface of the heating plate, and a reflecting plate formed of silica and brought into tight contact with the surface of the heating plate on which the heating element is formed. This heating device is arranged in a processing vessel in a CVD apparatus, and a semiconductor wafer is placed on the heating device. A process gas is supplied into the processing vessel while the semiconductor wafer is heated, thereby forming a predetermined film on the semiconductor wafer.
摘要翻译：加热装置由二氧化硅形成的加热板形成，具有用于加热待加热物体的加热面，具有预定图案的加热元件，并固定在与加热板的加热面相对的面上，反射板由二氧化硅形成并与形成有加热元件的加热板的表面紧密接触。该加热装置配置在CVD装置的处理容器中，将半导体晶片放置在加热装置上。在加热半导体晶片的同时，将处理气体供给到处理容器中，从而在半导体晶片上形成规定的膜。

20. 发明授权

US5575853A Vacuum exhaust system for processing apparatus 失效
标题翻译：用于加工设备的真空排气系统
公开(公告)号：US5575853A
公开(公告)日：1996-11-19
申请号：US496480
申请日：1995-06-29
申请人： Junichi Arami , Masayuki Kitamura , Mitsuaki Komino
发明人： Junichi Arami , Masayuki Kitamura , Mitsuaki Komino
IPC分类号： F04B37/16 , C23C16/44 , H01L21/205 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： C23C16/4412
摘要： A main pump having a wide range of vacuum exhaust capabilities and a high exhaust speed is connected adjacent to a processing chamber and an auxiliary pump having a low exhaust speed is connected by a small-diameter auxiliary pipeline to the exhaust side of the main pump. Since a main pump having a wide range of vacuum exhaust capabilities and a high exhaust speed is connected adjacent to the processing chamber in this manner, not only can improvements in the exhaust characteristics be expected, but it is also possible to reduce the diameter of the auxiliary pipeline from the main pump onward and make the auxiliary pump smaller. Since the auxiliary pump having a low exhaust speed is connected by a small-diameter auxiliary pipeline to the exhaust side of the main pump, the size and cost of the entire system can be reduced.
摘要翻译：具有广泛的真空排气能力和高排气速度的主泵连接在处理室附近，并且具有低排气速度的辅助泵通过小直径辅助管道连接到主泵的排气侧。由于具有广泛的真空排气能力和高排气速度的主泵以这种方式连接在处理室附近，所以不仅可以预期排气特性的改善，而且还可以减小直径辅助管路从主泵向前，使辅助泵更小。由于具有低排气速度的辅助泵通过小直径辅助管道连接到主泵的排气侧，所以可以减小整个系统的尺寸和成本。

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