专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明专利

JP2012178450A Cmp apparatus, polishing pad and cmp method 有权
标题翻译： CMP装置，抛光垫和CMP方法
公开(公告)号：JP2012178450A
公开(公告)日：2012-09-13
申请号：JP2011040468
申请日：2011-02-25
申请人： Toshiba Corp , 株式会社東芝
发明人： KAWASE AKIFUMI , MATSUI YUKITERU
IPC分类号： H01L21/304 , B24B37/00 , B24B37/015 , B24B37/20 , B24B49/14 , B24B49/16
CPC分类号： B24B37/24 , B24B37/015
摘要： PROBLEM TO BE SOLVED: To propose a CMP technique capable of ensuring high flatness and reducing polishing flaws compatibly.SOLUTION: A CMP apparatus comprises a supplying section 15 which supplies a slurry to a surface portion of a polishing pad 12 containing water soluble particles, a holding section 13 which brings an object 14 to be polished into contact with the surface portion of the polishing pad 12 while holding the object 14 to be polished, a temperature setting section 17 which is disposed in the surface portion of the polishing pad 12 and sets a temperature in the surface portion of the polishing pad 12, and a control section 18 which controls operations of the supplying section 15, the holding section 13 and the temperature setting section 17. The control section 18 executes a first polishing process of polishing the object 14 to be polished while setting the temperature in the surface portion of the polishing pad 12 within a first temperature range, and then executes a second polishing process of polishing the object 14 to be polished while setting the temperature in the surface portion of the polishing pad 12 within a second temperature range.
摘要翻译：要解决的问题：提出一种能够确保高平坦度并相应地减少抛光缺陷的CMP技术。解决方案：CMP设备包括供应部分15，该供应部分15向包含水溶性颗粒的抛光垫12的表面部分提供浆料;保持部分13，其使待研磨物体14与表面部分接触; 抛光垫12同时保持要被抛光的物体14，设置在抛光垫12的表面部分中并设置抛光垫12的表面部分中的温度的温度设定部分17以及控制部分18，对供给部15，保持部13以及温度设定部17的动作进行控制。控制部18执行将抛光对象物14抛光的第一研磨处理，同时将抛光垫12的表面部的温度设定在第一温度范围，然后执行抛光对象物14的第二抛光处理，同时设定t的表面部分中的温度他在第二温度范围内的抛光垫12。版权所有（C）2012，JPO＆INPIT

12. 发明专利

JP2012124258A Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2012124258A
公开(公告)日：2012-06-28
申请号：JP2010272590
申请日：2010-12-07
申请人： Jsr Corp , Jsr株式会社 , Toshiba Corp , 株式会社東芝
发明人： MORI YASUMASA , SHIDA HIROTAKA , KAWAGUCHI TORU , EDA HAJIME , MINAMI FUKUGAKU , KODERA MASAKO , MATSUI YUKITERU
IPC分类号： H01L21/304 , C09K3/14
摘要： PROBLEM TO BE SOLVED: To provide a CMP (chemical mechanical polishing) method using general-purpose polishing solution, by which recesses and seams in a wiring part can be minified, and which can finish a surface with oxidation resistance, and to provide a method of manufacturing a semiconductor device.SOLUTION: A method of manufacturing a semiconductor device includes: a processed body manufacturing step of burying a conductive material into a groove to form a wiring part, and forming a conductive film made of the conductive material, on an insulating film having the groove provided on a semiconductor substrate; a first polishing processing step of performing chemical mechanical polishing to the conductive film while leaving the wiring part buried in the groove; and a second polishing processing step of polishing the insulating film and the wiring part while supplying a chemical mechanical polishing slurry and a water solution of a compound represented by the following formula (1).
摘要翻译：要解决的问题：提供一种使用通用抛光液的CMP（化学机械抛光）方法，通过该方法可以使布线部分中的凹陷和接缝变细，并且可以使其具有抗氧化性的表面，并且提供制造半导体器件的方法。解决方案：一种制造半导体器件的方法包括：将导电材料埋入沟槽中以形成布线部分的加工体制造步骤，以及由导电材料制成的导电膜，在具有凹槽设置在半导体衬底上; 对导电膜进行化学机械抛光同时将布线部分埋入槽中的第一抛光处理步骤; 以及第二抛光处理步骤，同时提供化学机械抛光浆料和由下式（1）表示的化合物的水溶液，来研磨绝缘膜和布线部分。版权所有（C）2012，JPO＆INPIT

13. 发明专利

JP2011071215A Polishing method and semiconductor-device manufacturing method 审中-公开
标题翻译：抛光方法和半导体器件制造方法
公开(公告)号：JP2011071215A
公开(公告)日：2011-04-07
申请号：JP2009219331
申请日：2009-09-24
申请人： Toshiba Corp , 株式会社東芝
发明人： MATSUI YUKITERU , SETA SATOKO , ONO TAKATOSHI , EDA HAJIME
IPC分类号： H01L21/304 , B24B37/00 , B24B37/20 , B24B53/017 , B24B53/02 , B24B53/095
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： PROBLEM TO BE SOLVED: To provide a polishing method that achieves high flatness of a polished surface of a polishing body after CMP processing, and further reduces the defect density of scratches or the like on the polishing surface of the polishing body compared with the conventional one. SOLUTION: The polishing method includes: a conditioning step for spraying a conditioning agent, containing liquid, at a prescribed pressure on the surface of a non-foaming polishing pad 22 arranged on a polishing table 21; and a polishing step for polishing the surface of a polishing body 20 by supplying polishing slurry, containing cerium oxide particles and a surfactant, to the polishing pad 22 and by sliding the polishing body 20 and the polishing pad 22 relative to each other. The cross-section of the polishing pad 22 after the conditioning step is configured such that an average value of an amount of residual cerium when measuring several points in a measuring region of 200 μm 2 including the surface of the polishing pad 22 is set to ≤0.35 at%. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供在CMP处理之后实现抛光体的抛光表面的高平整度的抛光方法，并且进一步降低了抛光体的抛光表面上的划痕等的缺陷密度，常规的。解决方案：抛光方法包括：调节步骤，用于在布置在抛光台21上的非发泡抛光垫22的表面上以规定的压力喷涂含有液体的调理剂; 以及抛光步骤，通过将抛光浆料（含有氧化铈颗粒和表面活性剂）供给到抛光垫22并通过相对于彼此滑动抛光体20和抛光垫22来抛光抛光体20的表面。在调整步骤之后的抛光垫22的横截面被构造成使得在包括表面的200μm 2 的测量区域中测量多个点时残留的铈的平均值抛光垫22设定为≤0.35at％。版权所有（C）2011，JPO＆INPIT

14. 发明专利

JP2004247605A Cmp slurry and manufacturing method of semiconductor device 审中-公开
标题翻译：半导体器件的CMP浆料和制造方法
公开(公告)号：JP2004247605A
公开(公告)日：2004-09-02
申请号：JP2003037179
申请日：2003-02-14
申请人： Toshiba Corp , 株式会社東芝
发明人： MATSUI YUKITERU , MINAMI FUKUGAKU , YANO HIROYUKI
IPC分类号： B24B37/00 , C09G1/02 , H01L21/02 , H01L21/304 , H01L21/3205 , H01L21/321 , H01L21/768 , H01L23/522
CPC分类号： H01L21/02074 , C09G1/02 , H01L21/3212 , H01L21/7684
摘要： PROBLEM TO BE SOLVED: To provide a CMP slurry capable of forming damascene wiring having high flatness and reduced defect density and a surface impurity concentration. SOLUTION: The CMP slurry contains a solvent, polishing particles, and a silicone detergent having a 7≥ and 20≤ HLB value. COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：提供能够形成具有高平坦度和降低的缺陷密度和表面杂质浓度的镶嵌布线的CMP浆料。解决方案：CMP浆料含有溶剂，抛光颗粒和具有7≥和20≤HBB值的硅氧烷洗涤剂。版权所有（C）2004，JPO＆NCIPI

15. 发明专利

JP2004055615A Polishing member and method of manufacturing semiconductor device 有权
标题翻译：抛光构件及制造半导体器件的方法
公开(公告)号：JP2004055615A
公开(公告)日：2004-02-19
申请号：JP2002207323
申请日：2002-07-16
申请人： Toshiba Corp , 株式会社東芝
发明人： MATSUI YUKITERU , YANO HIROYUKI
IPC分类号： B24B37/00 , B24B37/20 , B24B37/24 , B24D3/00 , B24D3/28 , B24D3/34 , H01L21/304 , H01L21/321
CPC分类号： B24B37/24 , B24D3/28 , B24D3/346 , H01L21/3212
摘要： PROBLEM TO BE SOLVED: To provide a polishing member, to which chips are hard to stick, and to provide a method of manufacturing a semiconductor device, which carries out flattening process using the polishing member. SOLUTION: The polishing member 10 is composed of photocatalytic particles 11, which display photocatalytic action by irradiation with light and a support material 12 which supports the photocatalytic particles 11. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种抛光件，其中芯片难以粘附，并提供一种使用该抛光部件进行平坦化处理的半导体器件的制造方法。解决方案：抛光构件10由光催化作用的光催化剂颗粒11和支撑光催化颗粒11的载体材料12组成。（C）2004，JPO

16. 发明专利

JP2017092215A 半導体装置の製造方法および化学機械研磨用スラリ有权
公开(公告)号：JP2017092215A
公开(公告)日：2017-05-25
申请号：JP2015219680
申请日：2015-11-09
申请人：株式会社東芝 , Toshiba Corp
发明人： KAWASAKI TAKAHIKO , MATSUI YUKITERU , IWADE KENJI , KAWASE AKIFUMI
IPC分类号： H01L21/304 , B24B37/00 , C09G1/02 , C09K3/14
CPC分类号： H01L21/3212 , B24B37/20 , C09G1/02 , C23F3/04 , H01L21/31053
摘要：【課題】金属膜の占有率に局所的なばらつきがある被研磨膜についても良好な平坦化性能を得ることができる半導体製造方法および化学機械研磨用スラリを提供する。【解決手段】実施の一形態による半導体装置の製造方法は、(A)カチオン性水溶性重合体と(B)硝酸鉄と(C)砥粒とを含有するスラリを用い、絶縁膜と前記絶縁膜内に設けられた溝または孔を埋め込む第1タングステン膜とを含む被研磨膜を化学機械研磨する工程を持つ。前記化学機械研磨工程は、前記第1タングステン膜を研磨する第1研磨工程と、第1研磨工程後に実施され、前記第1タングステン膜と前記絶縁膜をともに研磨する第2研磨工程を有し、前記第2研磨工程で使用される前記スラリ中の(A)成分の含有量は300ppm未満であり、かつ(B)成分の含有量は100ppm以下である。【選択図】図11

17. 发明专利

JP2013258213A Semiconductor device manufacturing method 审中-公开
标题翻译：半导体器件制造方法
公开(公告)号：JP2013258213A
公开(公告)日：2013-12-26
申请号：JP2012132384
申请日：2012-06-11
申请人： Toshiba Corp , 株式会社東芝
发明人： KAWASE AKIFUMI , MINAMI FUKUGAKU , EDA HAJIME , MATSUI YUKITERU
IPC分类号： H01L21/304
CPC分类号： B24B53/017 , B24B53/095
摘要： PROBLEM TO BE SOLVED: To improve polishing characteristics in a CMP (Chemical Mechanical Polishing) process.SOLUTION: A semiconductor device manufacturing method comprises a step of performing a CMP method on a polishing target film 23 formed on a semiconductor substrate 20. The CMP method includes a step of conditioning the polishing cloth by making a dresser 15 come in contact with a surface of the polishing cloth; and a step of polishing the polishing target film by making a surface of the polishing target film come in contact with a surface of a polishing cloth having a negative Rsk value. In the step of conditioning the polishing cloth, a surface temperature of the polishing cloth is 40°C and over.
摘要翻译：要解决的问题：改善CMP（化学机械抛光）工艺中的抛光特性。解决方案：半导体器件制造方法包括在形成在半导体衬底20上的抛光对象膜23上执行CMP方法的步骤.CCP方法包括通过使修整器15与抛光布的表面接触来调节抛光布的步骤; 以及通过使研磨对象膜的表面与具有负Rsk值的研磨布的表面接触来研磨抛光对象膜的工序。在调理抛光布的步骤中，抛光布的表面温度为40℃以上。

18. 发明专利

JP2009267367A Semiconductor device manufacturing method 审中-公开
标题翻译：半导体器件制造方法
公开(公告)号：JP2009267367A
公开(公告)日：2009-11-12
申请号：JP2009039548
申请日：2009-02-23
申请人： Toshiba Corp , 株式会社東芝
发明人： MATSUI YUKITERU , EDA HAJIME , ONO TAKATOSHI , SETA SATOKO , TATEYAMA YOSHIKUNI
IPC分类号： H01L21/304 , B24B37/00 , B24B37/10 , B24B37/24
CPC分类号： H01L21/31053 , B24B37/044 , C09G1/02
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method, capable of applying planarization processing with high planarity to a pattern of a silicon oxide film. SOLUTION: In the semiconductor device manufacturing method for chemico-mechanically polishing and planarizing a substance to be polished, made of a silicon oxide film formed on a semiconductor substrate by relatively sliding the substance to be polished and a polishing pad arranged on a polishing table, in a state where a polishing slurry is supplied to the polishing pad; and the substance to be polished is abutted against the polishing pad, under the condition that polishing pressure lie within a range of 50 to 200 hPa, and that the rotational frequency of the polishing pad lie within a range of 10 to 80 rpm, in a state where the polishing slurry-containing cerium oxide grains, and an anionic surface active agent be supplied to the polishing pad which has a modulus of elasticity within a range of 300 to 600 MPa. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种半导体器件制造方法，能够将高平坦化的平坦化处理应用于氧化硅膜的图案。解决方案：在用于化学机械抛光和平面化待抛光物质的半导体器件制造方法中，通过相对滑动待抛光物质和在其上布置的抛光垫，在半导体衬底上形成的氧化硅膜在抛光浆料被供给到抛光垫的状态下的抛光台; 并且在抛光压力在50〜200hPa的范围内，抛光垫的旋转频率在10〜80rpm的范围内的状态下，将待研磨物质与抛光垫抵接，向具有300〜600MPa的弹性模量的研磨垫供给含有研磨浆料的二氧化铈粒子和阴离子表面活性剂的状态。版权所有（C）2010，JPO＆INPIT

19. 发明专利

JP2009071062A Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：JP2009071062A
公开(公告)日：2009-04-02
申请号：JP2007238364
申请日：2007-09-13
申请人： Toshiba Corp , 株式会社東芝
发明人： DOI SHUNSUKE , MATSUI YUKITERU
IPC分类号： H01L21/304 , B24B37/00
CPC分类号： H01L21/31053 , H01L21/76229
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of semiconductor device including a polishing step for preventing generation of a defect of insulating film after the polishing process, controlling the polishing of a stopper film and readily detecting the final point of the polishing process. SOLUTION: The manufacturing method includes a step of forming an insulating film for filling a concave part on a semiconductor substrate having the concave part and a stopper film to the part other than the concave part; a first polishing step of polishing the insulating film for achieving the flat surface thereof with a chemical mechanical polishing method, by using a first polishing liquid including cerium oxide and first anionic surface active agent; and a second polishing step of polishing the insulating film, under the polishing condition that differs from that of the first polishing step to expose the stopper film, by using a second polishing liquid that contains cerium oxide and a second anionic surface active agent of a molecular weight which is smaller than that of the first anionic surface active agent. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体器件的制造方法，其包括：抛光步骤，用于在抛光处理之后防止产生绝缘膜的缺陷的抛光步骤，控制停止膜的抛光并容易地检测抛光的最终点处理。解决方案：制造方法包括：将具有凹部的半导体基板上的凹部填充绝缘膜和止动膜的工序，除了凹部以外的部分; 通过使用包括氧化铈和第一阴离子表面活性剂的第一抛光液，用化学机械抛光方法抛光用于实现其平坦表面的绝缘膜的第一抛光步骤; 以及第二抛光步骤，在与第一抛光步骤不同的抛光条件下，通过使用包含二氧化铈的第二抛光液和分子中的第二阴离子表面活性剂来研磨绝缘膜，以暴露阻挡膜重量小于第一阴离子表面活性剂的重量。版权所有（C）2009，JPO＆INPIT

20. 发明专利

JP2007258735A Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2007258735A
公开(公告)日：2007-10-04
申请号：JP2007127268
申请日：2007-05-11
申请人： Toshiba Corp , 株式会社東芝
发明人： MATSUI YUKITERU , YANO HIROYUKI , MINAMI FUKUGAKU
IPC分类号： H01L21/304 , B24B37/00 , C09K3/14
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor devices capable of executing precise polishing at high polishing speed. SOLUTION: In the method, an insulating film having a recess is formed on a semiconductor substrate, a barrier layer is formed on the insulating film to cover the bottom surface and sidewall of the recess, a metal layer containing copper is formed on the barrier layer to embed the recess, and the metal layer is polished chemically and mechanically. The polishing supplies slurry onto a polishing member, where the slurry contains a polishing particle for showing photo catalyst operation, and a resin particle containing a mixture containing a methacryl resin, a phenol resin, a urea resin, a melanin resin, a polystyrene resin, a polyacetal resin, a polycarbonate resin, or at least one type of them. Light is applied to the slurry, the slurry is interposed between the polishing member and the metal layer, and the polishing member and the semiconductor substrate are moved relatively. The polishing particle is charged with a positive electrical charge, the resin particle contains a functional group electrified to a negative charge in a molecule or is surface-treated by silica. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够以高抛光速度执行精确抛光的半导体器件的制造方法。解决方案：在该方法中，在半导体衬底上形成具有凹部的绝缘膜，在绝缘膜上形成阻挡层以覆盖凹部的底面和侧壁，在铜上形成含有铜的金属层嵌入凹部的阻挡层，并且化学和机械地抛光金属层。抛光剂将浆料供给到抛光构件上，其中浆料包含用于显示光催化剂操作的抛光颗粒，以及含有甲基丙烯酸树脂，酚醛树脂，尿素树脂，黑色素树脂，聚苯乙烯树脂，聚缩醛树脂，聚碳酸酯树脂或它们中的至少一种。将光施加到浆料上，将浆料插入在抛光构件和金属层之间，并且抛光构件和半导体衬底相对移动。抛光颗粒带有正电荷，树脂颗粒含有在分子中带电的负电荷的官能团或用二氧化硅进行表面处理。版权所有（C）2008，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式