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11. 发明专利

JP2008034888A Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：JP2008034888A
公开(公告)日：2008-02-14
申请号：JP2007277180
申请日：2007-10-25
申请人： Toshiba Corp , Toshiba Electronic Engineering Corp , 東芝電子エンジニアリング株式会社 , 株式会社東芝
发明人： NITTA KOICHI , OKAZAKI HARUHIKO , WATANABE YUKIO , FURUKAWA CHISATO
IPC分类号： G02B6/12 , H01L33/06 , H01L33/10 , H01L33/12 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device to improve light extracting efficiency and to actualize high luminance. SOLUTION: The semiconductor light emitting device includes a photonic crystal 801, a first conducting type contact layer 802 mounted on the photonic crystal, an electrode 807 mounted on one portion field of the contact layer, a first conducting type clad layer 803 mounted on the other portion field of the contact layer, an active layer 804 mounted on the clad layer, a second conducting type clad layer 805 mounted on the active layer, a second conducting type contact layer 809 mounted on the clad layer, and an electrode 806 mounted on the contact layer, extracting light outside through the photonic crystal, the light having been emitted from the active layer. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种提高光提取效率并实现高亮度的半导体发光器件。解决方案：半导体发光器件包括光子晶体801，安装在光子晶体上的第一导电类型接触层802，安装在接触层的一个部分场上的电极807，安装在第一导电类型覆盖层803 在接触层的另一部分场上，安装在包覆层上的有源层804，安装在有源层上的第二导电型覆盖层805，安装在覆盖层上的第二导电型接触层809和电极806 安装在接触层上，通过光子晶体提取外部的光，所述光已经从有源层发射。版权所有（C）2008，JPO＆INPIT

12. 发明专利

JP2007019262A Semiconductor light-emitting device and manufacturing method thereof 审中-公开
标题翻译：半导体发光装置及其制造方法
公开(公告)号：JP2007019262A
公开(公告)日：2007-01-25
申请号：JP2005199042
申请日：2005-07-07
申请人： Toshiba Corp , Toshiba Discrete Technology Kk , 東芝ディスクリートテクノロジー株式会社 , 株式会社東芝
发明人： FURUKAWA CHISATO , NAKAMURA TAKAFUMI
IPC分类号： H01L33/06 , H01L33/22 , H01L33/30 , H01L33/40
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device that has a simple manufacturing process and excellent stability in mounting, and can improve light extraction efficiency. SOLUTION: There are provided: a luminous layer configuration section 20 having a pn junction capable of emitting light at a specified wavelength; rectangular, opposing, and inclined planes 13a, 13b that are joined to a p-type main surface at the luminous layer configuration section 20 where irregularities are formed on a surface comprising a cleavage plane; a vertical surface 11a and an opposite face that do not include the rectangle where the irregularities are formed on the surface comprising the cleavage plane are formed in a parallelogram, and oppose each other; a p-type GaP substrate 10 that is substantially transparent to a luminous wavelength; a p-side electrode 41 formed on the p-type GaP substrate 10; and an n-side electrode 31 formed on an n-type surface at the luminous layer configuration section 20. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种具有简单的制造工艺和优异的安装稳定性的半导体发光器件，并且可以提高光提取效率。解决方案：提供：具有能够发射指定波长的光的pn结的发光层配置部分20; 矩形，相对和倾斜的平面13a，13b，其在发光层构造部分20处连接到p型主表面，其中在包括解理面的表面上形成不规则; 在包括解理面的表面上形成不包括凹凸的矩形的垂直面11a和相对面形成为平行四边形，并且彼此相对; 对于发光波长基本透明的p型GaP基板10; 形成在p型GaP基板10上的p侧电极41; 以及形成在发光层配置部分20的n型表面上的n侧电极31.版权所有：（C）2007，JPO＆INPIT

13. 发明专利

JP2006310771A Semiconductor light emitting device 审中-公开
标题翻译：半导体发光器件
公开(公告)号：JP2006310771A
公开(公告)日：2006-11-09
申请号：JP2006025785
申请日：2006-02-02
申请人： Toshiba Corp , Toshiba Discrete Technology Kk , 東芝ディスクリートテクノロジー株式会社 , 株式会社東芝
发明人： FURUKAWA CHISATO , NAKAMURA TAKAFUMI
IPC分类号： H01L33/32 , H01L33/54 , H01L33/56
CPC分类号： H01L25/0753 , H01L24/32 , H01L33/44 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/8592 , H01L2224/92247 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a light emitting device which can suppress deterioration due to UV rays.
SOLUTION: The semiconductor light emitting device is equipped with a semiconductor light emitting element 2 having emission spectrum 400 nm or less, an ultraviolet absorption layer 6 which covers at least the light extraction surface of the semiconductor light emitting device 2, and a sealing resin 7 which seals at least the semiconductor light emitting device 2 covered by the ultraviolet absorption layer 6.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够抑制由于紫外线引起的劣化的发光装置。解决方案：半导体发光器件配备有发射光谱为400nm以下的半导体发光元件2，至少覆盖半导体发光元件2的光取出面的紫外线吸收层6和至少密封由紫外线吸收层6覆盖的半导体发光器件2的密封树脂7.版权所有（C）2007，JPO＆INPIT

14. 发明专利

JP2005123364A Optical semiconductor device and its manufacturing method 审中-公开
标题翻译：光学半导体器件及其制造方法
公开(公告)号：JP2005123364A
公开(公告)日：2005-05-12
申请号：JP2003355939
申请日：2003-10-16
申请人： Toshiba Corp , Toshiba Electronic Engineering Corp , 東芝電子エンジニアリング株式会社 , 株式会社東芝
发明人： MATSUYAMA TAKAYUKI , FURUKAWA CHISATO
IPC分类号： G02F1/015 , G02F1/025 , H01L21/66 , H01S5/028 , H01S5/12
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device in which a non-reflection film having a desired reflection factor and a high reliability is fabricated by a simple manufacturing process, and also to provide its manufacturing method. SOLUTION: On the surface of an emission end face, a silicon nitride film 5 is formed by plasma CVD and then a silicon dioxide film 6, a zirconium oxide film 7, and another silicon dioxide film 8 are formed in order. Where refractive indices of the films 5-8 are n1, n2, n3, and n4 respectively and thicknesses are d1, d2, d3, and d4 respectively, the sum of nd products, that is, n1×d1+n2×d2+n3×d3+n4×d4, is set to 1/4 of a wavelength of light source, with an error within ±10%. Because of this structure, the refractive index of the non-reflection film is reduced to 1E-4 or less over a wide range of band. Moreover, the non-reflection film thus-fabricated is physically strong, and hence is prevented from such problems as film separation, falling-off, and current leakage on an interface with the emission face of the semiconductor. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供一种光学半导体器件，其中通过简单的制造工艺制造具有期望的反射系数和高可靠性的非反射膜，并且还提供其制造方法。解决方案：在发射端面的表面上，通过等离子体CVD形成氮化硅膜5，然后依次形成二氧化硅膜6，氧化锆膜7和另一个二氧化硅膜8。其中膜5-8的折射率分别为n1，n2，n3和n4，厚度分别为d1，d2，d3和d4，nd产物的和，即n1×d1 + n2×d2 + n3 ×d3 + n4×d4设定为光源的波长的1/4，误差在±10％以内。由于这种结构，在宽范围的带内，非反射膜的折射率降低到1E-4以下。此外，如此制造的非反射膜在物理上很强，因此防止了与半导体的发射面的界面上的膜分离，脱落和电流泄漏等问题。版权所有（C）2005，JPO＆NCIPI

15. 发明专利

JP2013197151A Semiconductor light-emitting element and manufacturing method of the same 审中-公开
标题翻译：半导体发光元件及其制造方法
公开(公告)号：JP2013197151A
公开(公告)日：2013-09-30
申请号：JP2012060075
申请日：2012-03-16
申请人： Toshiba Corp , 株式会社東芝
发明人： FURUKAWA CHISATO
IPC分类号： H01L33/20 , H01L33/30 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a thin semiconductor light-emitting element and a manufacturing method of the same.SOLUTION: A semiconductor light-emitting element 10 comprises: a substrate 11 which has a Mohs hardness of 8 and over and a thickness of greater than 0 and not greater than 100 μm; a junction layer 12 provided on the substrate 11; a semiconductor laminate 13 which includes a lamination part 13c in which a first semiconductor layer 14 of a first conductivity type, a semiconductor light-emitting layer 15 and a second semiconductor layer 16 of a second conductivity type are sequentially laminated, and a first semiconductor layer part 13d, and which is provided on the junction layer 12; a first electrode 17 provided on the exposed first semiconductor layer 14; and a second electrode 18 provided on the second semiconductor layer 16.
摘要翻译：要解决的问题：提供一种薄的半导体发光元件及其制造方法。解决方案：一种半导体发光元件10包括：具有莫氏硬度为8以上且厚度更大的基板11 大于0且不大于100μm; 设置在基板11上的接合层12; 半导体层叠体13，其具有依次层叠有第一导电型的第一半导体层14，半导体发光层15和第二导电型的第二半导体层16的层叠部13c，以及第一半导体层部分13d，并且设置在接合层12上; 设置在暴露的第一半导体层14上的第一电极17; 以及设置在第二半导体层16上的第二电极18。

16. 发明专利

JP2009289801A Light-emitting device and method of manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：JP2009289801A
公开(公告)日：2009-12-10
申请号：JP2008137945
申请日：2008-05-27
申请人： Toshiba Corp , Toshiba Discrete Technology Kk , 東芝ディスクリートテクノロジー株式会社 , 株式会社東芝
发明人： FURUKAWA CHISATO , NAKAMURA TAKAFUMI
IPC分类号： H01L33/06 , H01L33/14 , H01L33/22 , H01L33/30 , H01L33/38 , H01L33/40
CPC分类号： H01L33/14 , H01L33/20 , H01L33/38 , H01L2933/0016
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting device, wherein optical absorption is reduced, for high brightness; and to provide a method of manufacturing the same.
SOLUTION: The light-emitting device includes: a light-emitting layer comprised of a semiconductor; an upper side electrode comprising a bonding electrode that can be connected to a wire and a thin wire electrode which is away from the bonding electrode while enclosing it and includes a connection part to the bonding electrode; and a current diffusion layer which is provided between the light-emitting layer and the upper side electrode and includes a recess for emitting light emitted from the light-emitting layer formed in the region having no upper side electrode.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供高亮度的光吸收降低的发光装置; 并提供其制造方法。解决方案：发光器件包括：由半导体构成的发光层; 上侧电极，其包括可以连接到导线的接合电极和细线电极，所述细线电极在封闭所述电极的同时远离所述接合电极并且包括与所述接合电极的连接部分; 以及电流扩散层，其设置在发光层和上侧电极之间，并且包括用于发射从在没有上侧电极的区域中形成的发光层发射的光的凹部。版权所有（C）2010，JPO＆INPIT

17. 发明专利

JP2007019263A Semiconductor light-emitting device and manufacturing method thereof 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：JP2007019263A
公开(公告)日：2007-01-25
申请号：JP2005199043
申请日：2005-07-07
申请人： Toshiba Corp , Toshiba Discrete Technology Kk , 東芝ディスクリートテクノロジー株式会社 , 株式会社東芝
发明人： FURUKAWA CHISATO , NAKAMURA TAKAFUMI
IPC分类号： H01L33/06 , H01L33/22 , H01L33/24 , H01L33/30
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device capable of improving light extraction efficiency. SOLUTION: There are provided: an active layer 24 where there are irregularities on a first main surface, and a second main surface opposite to the first one; an n-type cladding layer 25 that is connected to the side of the first main surface where a surface far from the first main surface forms an irregular surface having the same cycle of irregularities as those of the irregular surfaces; a p-type adhesive layer 22 that is connected to the side of the second main surface where a surface far from the second main surface becomes a plane surface substantially; a luminous layer configuration section 20 that can emit light at a specified wavelength; an n-side electrode 41 formed on a surface opposite to the active layer 24 in the n-type cladding layer 25; a p-type GaP substrate 10 that is joined to the adhesive layer 22 at the luminous layer configuration section 20, and substantially transparent to a luminous wavelength; and a p-side electrode 43 formed on a surface opposite to the adhesive layer 22 of the p-type GaP substrate 10. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供能够提高光提取效率的半导体发光装置。解决方案：提供：活性层24，其在第一主表面上具有不规则性，第二主表面与第一主表面相反; 连接到第一主表面的远离第一主表面的表面形成具有与不规则表面相同的不规则循环的不规则表面的n型包覆层25; 连接到第二主表面的远离第二主表面的表面基本上成为平面的p型粘合剂层22; 可以发射指定波长的光的发光层配置部20; 形成在与n型包层25中的有源层24相反的表面上的n侧电极41; p型GaP基板10，其在发光层配置部20处接合到粘合剂层22，并且对于发光波长基本透明; 以及形成在与p型GaP基板10的粘合层22相反的表面上的p侧电极43.版权所有（C）2007，JPO＆INPIT

18. 发明专利

JP2006295215A Semiconductor light emitting device 审中-公开
标题翻译：半导体发光器件
公开(公告)号：JP2006295215A
公开(公告)日：2006-10-26
申请号：JP2006190556
申请日：2006-07-11
申请人： Toshiba Corp , Toshiba Electronic Engineering Corp , 東芝電子エンジニアリング株式会社 , 株式会社東芝
发明人： SUGAWARA HIDETO , FURUKAWA CHISATO
IPC分类号： H01L33/32 , H01L33/50 , H01L33/54 , H01L33/60 , H01L33/62
CPC分类号： H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/8592 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device capable of eliminating "non-uniformity" in light emission. SOLUTION: The semiconductor light emitting device includes a mounting member, a light emitting element mounted on the mounting member, a resin layer formed on the light emitting element and including a substantially flat upper surface, a first rein layer formed on the resin layer, including a first phosphor which absorbs primary light emitted from the light emitting element and discharges secondary light whose wavelength differs from that of the primary light, and having a fixed thickness on the substantially flat upper surface, and a second resin layer formed on the first resin layer, including a second phosphor, differing from the first phosphor, which absorbs primary light emitted from the light emitting element and discharges the secondary light whose wavelength differs from that of the primary light, and having a fixed thickness on the substantially flat upper surface. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够消除发光中的“不均匀”的半导体发光器件。解决方案：半导体发光器件包括安装构件，安装在安装构件上的发光元件，形成在发光元件上的树脂层，并且包括基本上平坦的上表面，形成在树脂上的第一调节层层，其包括吸收从发光元件发射的一次光的第一荧光体，并且放出与一次光的波长不同的二次光，并且在大致平坦的上表面上具有固定的厚度，以及形成在第二荧光体上的第二树脂层第一树脂层，包括与第一荧光体不同的第二荧光体，其吸收从发光元件发射的初级光，并且排出与一次光的波长不同的二次光，并且在基本上平坦的上部具有固定的厚度表面。版权所有（C）2007，JPO＆INPIT

19. 发明专利

JP2006041553A Light emitting device 有权
标题翻译：发光装置
公开(公告)号：JP2006041553A
公开(公告)日：2006-02-09
申请号：JP2005290438
申请日：2005-10-03
申请人： Toshiba Corp , Toshiba Electronic Engineering Corp , 東芝電子エンジニアリング株式会社 , 株式会社東芝
发明人： FURUKAWA CHISATO , NITTA KOICHI
IPC分类号： H01L33/32 , G09F9/33 , H01L33/50 , H01L33/56 , H01L33/60 , H01L33/62
CPC分类号： H01L2224/16145 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To enable a light emitting device LED, which combines a semiconductor LED and phosphor, to extract the optical output efficiently.
SOLUTION: The structure of this LED is as follows. UV light emitted by the UV-LED11 is injected into a phosphor layer 18. Then, the luminous light generated by this phosphor layer 18 penetrates the UV-LED11, without passing through the phosphor layer 18, which can be extracted from the side of a plate 12.
COPYRIGHT: (C)2006,JPO&NCIPI

20. 发明专利

JP2005340860A Semiconductor light-emitting element 审中-公开
标题翻译：半导体发光元件
公开(公告)号：JP2005340860A
公开(公告)日：2005-12-08
申请号：JP2005234711
申请日：2005-08-12
申请人： Toshiba Corp , Toshiba Electronic Engineering Corp , 東芝電子エンジニアリング株式会社 , 株式会社東芝
发明人： OKAZAKI HARUHIKO , NOZAKI CHIHARU , FURUKAWA CHISATO
IPC分类号： H01L29/872 , H01L29/47 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/00
CPC分类号： H01L33/42 , H01L33/38
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that has improved ohmic characteristics and has improved reliability, and to provide a method for manufacturing the semiconductor light-emitting element. SOLUTION: As a contact metal that comes into contact with a p-type contact layer, silver or a mixture of silver and gold is used, thus greatly improving the ohmic contact with the p-type contact layer. By forming a tungsten layer on an n-side contact metal layer at the n-side of an element, a barrier effect is maintained, and ohmic contact can be improved. Further, by performing heat treatment in a reducing atmosphere after forming a p-side contact electrode layer, the ohmic contact can be improved. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供一种具有改善的欧姆特性并具有提高的可靠性的半导体发光元件，并提供一种制造半导体发光元件的方法。解决方案：作为与p型接触层接触的接触金属，使用银或银和金的混合物，因此极大地改善了与p型接触层的欧姆接触。通过在元件的n侧的n侧接触金属层上形成钨层，可以保持屏障效果，能够提高欧姆接触。此外，通过在形成p侧接触电极层之后在还原气氛中进行热处理，可以提高欧姆接触。版权所有（C）2006，JPO＆NCIPI

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