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11. 发明专利

JP2012064903A Magnetoresistance effect element, magnetic memory and method of manufacturing magnetoresistance effect element 有权
标题翻译：磁阻效应元件，磁记忆和制造磁阻效应元件的方法
公开(公告)号：JP2012064903A
公开(公告)日：2012-03-29
申请号：JP2010210180
申请日：2010-09-17
申请人： National Institute Of Advanced Industrial & Technology , Toshiba Corp , 株式会社東芝 , 独立行政法人産業技術総合研究所
发明人： KITAGAWA EIJI , DAIBO TATATOMI , HASHIMOTO YUTAKA , TOKO MASARU , KAI TADASHI , NAGAMINE MAKOTO , NAGASE TOSHIHIKO , NISHIYAMA KATSUYA , UEDA KOJI , YODA HIROAKI , YAKUSHIJI KEI , YUASA SHINJI , KUBOTA HITOSHI , NAGAHAMA TARO , FUKUSHIMA AKIO , ANDO KOJI
IPC分类号： H01L27/105 , H01F10/14 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L43/08
CPC分类号： H01L43/10 , B82Y40/00 , G11C11/161 , H01F10/133 , H01F10/3286 , H01F41/307 , H01L27/228 , H01L29/82 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To improve the device characteristics of a magnetoresistance effect element.SOLUTION: The magnetoresistance effect element includes a second magnetic layer 92 having magnetic anisotropy in the direction perpendicular to the film surface and an invariable orientation of magnetization, a first magnetic layer 91 having magnetic anisotropy in the direction perpendicular to the film surface and a variable orientation of magnetization, and a nonmagnetic layer 93 provided between the first and second magnetic layers 91, 92. The first magnetic layer 91 has a magnetization film 21 containing at least one element selected from a first group consisting of Tb, Gd and Dy, and at least one element selected from a second group consisting of Co and Fe. The magnetization film 21 contains an amorphous phase 29 and a crystal 28 having a particle size of 1 nm or less.
摘要翻译：要解决的问题：提高磁阻效应元件的器件特性。解决方案：磁阻效应元件包括在垂直于膜表面的方向上具有磁各向异性的第二磁性层92和磁化的不变取向，在垂直于膜表面的方向上具有磁各向异性的第一磁性层91和磁化的可变取向以及设置在第一和第二磁性层91,92之间的非磁性层93.第一磁性层91具有包含至少一种选自Tb，Gd和Dy的元素的磁化膜21 ，以及选自Co和Fe组成的第二组中的至少一种元素。磁化膜21包含非晶相29和粒径为1nm以下的晶体28。版权所有（C）2012，JPO＆INPIT

12. 发明专利

JP2013243220A Magnetic memory element and method for manufacturing the same 有权
标题翻译：磁记忆元件及其制造方法
公开(公告)号：JP2013243220A
公开(公告)日：2013-12-05
申请号：JP2012114951
申请日：2012-05-18
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA EIJI , KAMATA SHINGI , KASHIWADA SAORI , KATO YUSHI , DAIBO TATATOMI
IPC分类号： H01L43/12 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10
CPC分类号： H01L29/82 , H01L29/66007 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a magnetic memory element capable of suppressing insulation failure, and a method for manufacturing the magnetic memory element.SOLUTION: A magnetic memory element according to an embodiment includes: a first magnetic layer 13; a second magnetic layer 15; an intermediate layer 14 disposed between the first magnetic layer and the second magnetic layer; a layer 12 which is disposed on a face of the first magnetic layer, the face being opposite of a face where the intermediate layer is disposed, and includes B and one or more elements selected from among Hf, Al and Mg; and an insulation layer 20 which is disposed on a side wall of the intermediate layer and includes one or more elements selected from among Hf, Al and Mg included in the layer.
摘要翻译：要解决的问题：提供一种能够抑制绝缘破坏的磁存储元件及其制造方法。根据实施例的磁存储元件包括：第一磁性层13; 第二磁性层15; 设置在第一磁性层和第二磁性层之间的中间层14; 布置在第一磁性层的表面上的层12，其表面与设置有中间层的面相反，并且包括B和选自Hf，Al和Mg中的一种或多种元素; 以及绝缘层20，其设置在中间层的侧壁上，并且包括从层中包括的Hf，Al和Mg中选择的一种或多种元素。

13. 发明专利

JP2013069788A Magnetoresistance effect element, magnetic memory and method for manufacturing magnetoresistance effect element 有权
标题翻译：磁阻效应元件，磁记忆和制造磁阻效应元件的方法
公开(公告)号：JP2013069788A
公开(公告)日：2013-04-18
申请号：JP2011206386
申请日：2011-09-21
申请人： Toshiba Corp , 株式会社東芝
发明人： OSAWA YUICHI , DAIBO TATATOMI , KATO YUSHI , KITAGAWA EIJI , KASHIWADA SAORI , AMANO MINORU , ITO JUNICHI
IPC分类号： H01L43/08 , G11B5/39 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/10 , H01L43/12
CPC分类号： H01L29/82 , B82Y40/00 , G11C11/161 , H01F10/126 , H01F10/3286 , H01F41/303 , H01L27/228 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To suppress characteristic deterioration in a magnetoresistance effect element.SOLUTION: A magnetoresistance effect element of the present embodiment comprises: a first magnetic body 30 having a magnetic anisotropy and an invariable magnetization direction in the vertical direction relative to a film surface; and a second magnetic body 10 having a magnetic anisotropy and a variable magnetization direction in the vertical direction relative to the film surface; and a nonmagnetic body 20 formed between the magnetic layers 10, 30. At least one of the first and second magnetic bodies comprises a magnetic layer 301 including boron (B), rare earth metal and transition metal. In the magnetic layer 301, the content of the rare earth metal is 20 at.% or more, the content of the transition metal is 30 at.% or more and the content of boron is 1 at.% or more and 50 at.% or less.
摘要翻译：要解决的问题：抑制磁阻效应元件的特性劣化。解决方案：本实施例的磁阻效应元件包括：具有相对于膜表面的垂直方向上的磁各向异性和不变磁化方向的第一磁体30; 以及相对于膜表面在垂直方向上具有磁各向异性和可变磁化方向的第二磁体10; 以及形成在磁性层10,30之间的非磁性体20.第一和第二磁性体中的至少一个包括包含硼（B），稀土金属和过渡金属的磁性层301。在磁性层301中，稀土金属的含量为20原子％以上，过渡金属的含量为30原子％以上，硼的含量为1原子％以上且50原子。％或更少。版权所有（C）2013，JPO＆INPIT

14. 发明专利

JP2012064905A Magnetoresistance effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁记忆
公开(公告)号：JP2012064905A
公开(公告)日：2012-03-29
申请号：JP2010210183
申请日：2010-09-17
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA EIJI , DAIBO TATATOMI , KAI TADASHI , NAGASE TOSHIHIKO , NISHIYAMA KATSUYA , UEDA KOJI , YODA HIROAKI
IPC分类号： H01L27/105 , H01L21/8246 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To improve the characteristics of a magnetoresistance effect element.SOLUTION: The magnetoresistance effect element comprises: a recording layer 10 having magnetic anisotropy in the direction normal to a film surface and a variable orientation of magnetization; a reference layer 20 having magnetic anisotropy in the direction normal to a film surface and a variable orientation of magnetization; a non-magnetic layer 30 provided between the recording layer 10 and the reference layer 20; an underlying layer 40 provided on the side of the recording layer 10 opposite from the side where the non-magnetic layer 30 is provided; and an underlying layer 11 provided between the recording layer 10 and the underlying layer 40. The second underlying layer is a Pd film having a concentration of 3×10atms/cmor less.
摘要翻译：要解决的问题：提高磁阻效应元件的特性。解决方案：磁阻效应元件包括：在垂直于膜表面的方向上具有磁各向异性的记录层10和磁化的可变取向; 在垂直于膜表面的方向上具有磁各向异性的参考层20和磁化的可变取向; 设置在记录层10和参考层20之间的非磁性层30; 设置在与设置非磁性层30的一侧相反的记录层10侧的下层40; 以及设置在记录层10和下面的层40之间的下层11.第二底层是浓度为3×10 6 / s的Pd膜。 POS =“POST”> 2 或更少。版权所有（C）2012，JPO＆INPIT

15. 发明专利

JP2009239120A Magnetoresistive element, and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2009239120A
公开(公告)日：2009-10-15
申请号：JP2008084938
申请日：2008-03-27
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA EIJI , YOSHIKAWA MASAHISA , NAGASE TOSHIHIKO , DAIBO TATATOMI , NAGAMINE MAKOTO , NISHIYAMA KATSUYA , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , G11C11/15 , H01F10/16 , H01F10/26 , H01L21/8246 , H01L27/105 , H01L43/10
CPC分类号： H01L43/08 , G11C11/161 , H01L27/222
摘要： PROBLEM TO BE SOLVED: To reduce variations in inversion current density upon magnetic reversal.
SOLUTION: A magnetoresistive element 10 includes an underlying layer 12 having a cubic or tetragonal crystal structure oriented in a (001) plane, a recording layer 13 provided on the underlying layer 12, having magnetic anisotropy perpendicular to a film surface, and having an fct (face-centered tetragonal) structure oriented in a (001) plane, a non-magnetic layer 14 provided on the recording layer 13, and a reference layer 15 provided on the non-magnetic layer 14, and having magnetic anisotropy perpendicular to the film surface. An in-plane lattice constant a1 of the underlying layer 12 and the in-plane lattice constant a2 of the recording layer 13 satisfy the following relation of |√2×a1/2-a2|/a2
摘要翻译：要解决的问题：为了减少反转电流密度的变化。解决方案：磁阻元件10包括具有在（001）面取向的立方或四方晶体结构的下层12，设置在下层12上的具有垂直于膜表面的磁各向异性的记录层13，以及具有在（001）面取向的fct（面心四边形）结构，设置在记录层13上的非磁性层14和设置在非磁性层14上的参考层15，具有垂直于磁性的各向异性到电影表面。下层12的面内晶格常数a1和记录层13的面内晶格常数a2满足¾√2×a1 / 2-a2¾/ a2

16. 发明专利

JP2013197345A Magnetoresistance effect element and magnetic memory 审中-公开
标题翻译：磁阻效应元件和磁记忆
公开(公告)号：JP2013197345A
公开(公告)日：2013-09-30
申请号：JP2012063485
申请日：2012-03-21
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA EIJI , DAIBO TATATOMI , KATO YUSHI
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： H01L27/228 , H01F10/123 , H01F10/3254 , H01F10/3286 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To enhance the characteristics of a magnetoresistance effect element.SOLUTION: The magnetoresistance effect element comprises: a first magnetic film 10 having a variable direction of magnetization; a second magnetic film 11 having an invariable direction of magnetization; and a nonmagnetic film 12 provided between the first and second magnetic films in contact with at least one of them, and containing a magnesium oxide film to which at least one element, selected from a first group including copper, silver and gold, is added.
摘要翻译：要解决的问题：提高磁阻效应元件的特性。解决方案：磁阻效应元件包括：具有可变方向磁化的第一磁膜10; 具有不变磁化方向的第二磁性膜11; 以及设置在与其中的至少一个接触的第一和第二磁性膜之间并且包含氧化镁膜的非磁性膜12，其中添加了至少一种选自包括铜，银和金的第一组的元素。

17. 发明专利

JP2013053324A Sputtering target and method of manufacturing magnetic memory using the same 有权
标题翻译：溅射目标和使用其制造磁记忆的方法
公开(公告)号：JP2013053324A
公开(公告)日：2013-03-21
申请号：JP2011190868
申请日：2011-09-01
申请人： Toshiba Corp , 株式会社東芝 , Ube Material Industries Ltd , 宇部マテリアルズ株式会社
发明人： KITAGAWA EIJI , DAIBO TATATOMI , NOMA KENJI , KAI TADASHI , YAMAKAWA KOJI , NAGASE TOSHIHIKO , NISHIYAMA KATSUYA , UEDA KOJI , WATANABE DAISUKE , YODA HIROAKI , SANO SATOSHI , NISHIMURA YOSHIHIRO , WATANABE TAKAYUKI , KATO YUZO , UEKI AKIRA
IPC分类号： C23C14/34 , C04B35/053 , C23C14/08 , H01L21/8246 , H01L27/105 , H01L43/10 , H01L43/12
CPC分类号： C23C14/082 , C23C14/3414 , G11C11/161 , H01L27/228 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target that can improve an MR ratio of a magnet tunnel junction element, and to provide a method of manufacturing a magnetic memory using the same.SOLUTION: There are provided the sputtering target including a target body 10 that has MgO as a main component and a thickness of 3 mm or smaller, and also the method of manufacturing a magnetic memory using the sputtering target which can improve an MR ratio.

18. 发明专利

JP2012204688A Magnetic element and nonvolatile storage device 有权
标题翻译：磁性元件和非易失存储器件
公开(公告)号：JP2012204688A
公开(公告)日：2012-10-22
申请号：JP2011068928
申请日：2011-03-25
申请人： Toshiba Corp , 株式会社東芝
发明人： SAIDA DAISUKE , AMANO MINORU , ITO JUNICHI , OSAWA YUICHI , KASHIWADA SAORI , KAMATA SHINGI , DAIBO TATATOMI
IPC分类号： H01L27/105 , G11C11/15 , H01L21/8246 , H01L29/82 , H01L43/08
CPC分类号： G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic element and a nonvolatile storage device which inhibit write disturb in read time.SOLUTION: According to an embodiment, a magnetic element comprises a first conductive layer, a second conductive layer, intermediate wiring, a first lamination part and a second lamination part. The intermediate wiring is provided between the first conductive layer and the second conductive layer. The first lamination part is provided between the first conductive layer and the intermediate wiring. The first lamination part includes a first ferromagnetic layer having magnetization fixed in a first direction, a second ferromagnetic layer laminated on the first ferromagnetic layer and having a variable magnetization direction and a first non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer. The second lamination part is provided between the second conductive layer and the intermediate wiring. The second lamination part includes a third ferromagnetic layer having a variable magnetization direction, a fourth ferromagnetic layer laminated on the third ferromagnetic layer and having magnetization fixed in a second direction and a second non-magnetic layer provided between the third ferromagnetic layer and the fourth ferromagnetic layer.
摘要翻译：要解决的问题：提供一种在读取时间内抑制写入干扰的磁性元件和非易失性存储装置。解决方案：根据实施例，磁性元件包括第一导电层，第二导电层，中间布线，第一层叠部分和第二层压部分。中间布线设置在第一导电层和第二导电层之间。第一层叠部件设置在第一导电层和中间布线之间。第一层压部件包括具有沿第一方向固定的磁化的第一铁磁层，层压在第一铁磁层上并具有可变磁化方向的第二铁磁层和设置在第一铁磁层和第二铁磁层之间的第一非磁性层层。第二层压部件设置在第二导电层和中间布线之间。第二层压部件包括具有可变磁化方向的第三铁磁层，层压在第三铁磁层上并具有沿第二方向固定的磁化的第四铁磁层和设置在第三铁磁层和第四铁磁层之间的第二非磁性层层。版权所有（C）2013，JPO＆INPIT

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