专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US06420197B1 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06420197B1
公开(公告)日：2002-07-16
申请号：US09511371
申请日：2000-02-23
申请人： Masahiro Ishida , Masaaki Yuri , Osamu Imafuji , Shinji Nakamura , Kenji Orita
发明人： Masahiro Ishida , Masaaki Yuri , Osamu Imafuji , Shinji Nakamura , Kenji Orita
IPC分类号： H01L2100
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/02381 , H01L21/0242 , H01L21/0245 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L33/0079 , H01S5/32341
摘要： A semiconductor device comprises a substrate having a first thermal expansion coefficient T1, a strain reducing layer formed on the substrate and having a second thermal expansion coefficient T2, and a semiconductor layer formed on the strain reducing layer, having a third thermal expansion coefficient T3, and made of a nitride compound represented by AlyGa1−y−zInzN (0≦y≦1, 0≦z ≦1). The second thermal expansion coefficient T2 is lower than the first thermal expansion coefficient T1. The third thermal expansion coefficient T3 is lower than the first thermal expansion coefficient T1 and higher than the second thermal expansion coefficient T2.
摘要翻译：半导体器件包括具有第一热膨胀系数T1的基板和形成在基板上并具有第二热膨胀系数T2的应变减小层，以及形成在应变减小层上的具有第三热膨胀系数T3的半导体层，并由由Al y Ga 1-y-z In z N（0≤y≤1,0<= z <= 1）表示的氮化物组成。第二热膨胀系数T2低于第一热膨胀系数T1。第三热膨胀系数T3比第一热膨胀系数T1低，高于第二热膨胀系数T2。

12. 发明授权

US06593159B1 Semiconductor substrate, semiconductor device and method of manufacturing the same 失效
标题翻译：半导体衬底，半导体器件及其制造方法
公开(公告)号：US06593159B1
公开(公告)日：2003-07-15
申请号：US09532063
申请日：2000-03-21
申请人： Tadao Hashimoto , Osamu Imafuji , Masaaki Yuri , Masahiro Ishida
发明人： Tadao Hashimoto , Osamu Imafuji , Masaaki Yuri , Masahiro Ishida
IPC分类号： H01L2100
CPC分类号： H01L33/007 , B82Y20/00 , C30B25/18 , H01S5/0207 , H01S5/021 , H01S5/2231 , H01S5/3201 , H01S5/34333 , H01S2301/173
摘要： A sapphire substrate, a buffer layer of undoped GaN and a compound semiconductor crystal layer successively formed on the sapphire substrate together form a substrate of a light emitting diode. A first cladding layer of n-type GaN, an active layer of undoped In0.2Ga0.8N and a second cladding layer successively formed on the compound semiconductor crystal layer together form a device structure of the light emitting diode. On the second cladding layer, a p-type electrode is formed, and on the first cladding layer, an n-type electrode is formed. In a part of the sapphire substrate opposing the p-type electrode, a recess having a trapezoidal section is formed, so that the thickness of an upper portion of the sapphire substrate above the recess can be substantially equal to or smaller than the thickness of the compound semiconductor crystal layer.
摘要翻译：蓝宝石衬底，未掺杂GaN的缓冲层和连续形成在蓝宝石衬底上的化合物半导体晶体层一起形成发光二极管的衬底。 n型GaN的第一包层，未掺杂的In 0.2 Ga 0.8 N的有源层和连续形成在化合物半导体晶体层上的第二覆层一起形成发光二极管的器件结构。在第二包层上形成p型电极，在第一包层上形成n型电极。在与p型电极相对的蓝宝石衬底的一部分中，形成具有梯形截面的凹部，使得凹部上方的蓝宝石衬底的上部的厚度可以基本上等于或小于化合物半导体晶体层。

13. 发明授权

US06566231B2 Method of manufacturing high performance semiconductor device with reduced lattice defects in the active region 失效
标题翻译：制造有源区域中具有减小的晶格缺陷的高性能半导体器件的方法
公开(公告)号：US06566231B2
公开(公告)日：2003-05-20
申请号：US09790908
申请日：2001-02-23
申请人： Masahiro Ogawa , Kenji Orita , Masahiro Ishida , Shinji Nakamura , Osamu Imafuji , Masaaki Yuri
发明人： Masahiro Ogawa , Kenji Orita , Masahiro Ishida , Shinji Nakamura , Osamu Imafuji , Masaaki Yuri
IPC分类号： H01L2176
CPC分类号： H01L33/007 , H01L21/02381 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02546 , H01L21/02642 , H01L21/02647
摘要： A first semiconductor layer is epitaxially grown on a semiconductor substrate and patterned to form concave and convex portions. A second semiconductor layer is formed on the first semiconductor layer using a top epitaxial mask covering the top surface of the convex portion. Lattice defects D propagating from the first semiconductor layer exist only in a region located above the center of the concave portion (a defect region Ra), while in the other region (a low defect region Rb) lattice defects D propagating from the first semiconductor layer hardly exist.
摘要翻译：第一半导体层在半导体衬底上外延生长并图案化以形成凹凸部分。使用覆盖凸部的顶面的顶部外延掩模，在第一半导体层上形成第二半导体层。从第一半导体层传播的晶格缺陷D仅存在于位于凹部的中心以上的区域（缺陷区域Ra），而在另一区域（低缺陷区域Rb）中，从第一半导体层传播的缺陷D 几乎不存在

14. 发明授权

US06563140B1 Semiconductor light emitting device and method for producing the same 失效
公开(公告)号：US06563140B1
公开(公告)日：2003-05-13
申请号：US09392376
申请日：1999-09-09
申请人： Shinji Nakamura , Masahiro Ishida , Masaaki Yuri , Osamu Imafuji , Kenji Orita
发明人： Shinji Nakamura , Masahiro Ishida , Masaaki Yuri , Osamu Imafuji , Kenji Orita
IPC分类号： H01L3300
CPC分类号： H01S5/2231 , H01S5/32341 , Y10S438/956
摘要： A semiconductor light emitting device of the present invention includes: a substrate; a light emitting layer; a semiconductor layer of a hexagonal first III-group nitride crystal; and a cladding layer of a second III-group nitride crystal. A stripe groove is provided in the semiconductor layer along a direction.

15. 发明授权

US06546035B2 Semiconductor laser diode array and method of fabricating the same 有权
标题翻译：半导体激光二极管阵列及其制造方法
公开(公告)号：US06546035B2
公开(公告)日：2003-04-08
申请号：US09794085
申请日：2001-02-28
申请人： Osamu Imafuji , Masaaki Yuri
发明人： Osamu Imafuji , Masaaki Yuri
IPC分类号： H01S500
CPC分类号： H01S5/4031 , H01S5/4087
摘要： A semiconductor laser diode array of this invention contains a first laser diode including a first cladding layer of a first conductivity type formed on a substrate, a first active layer formed on the first cladding layer and a second cladding layer of a second conductivity type formed on the active layer; and a second laser diode including a third cladding layer of the first conductivity type formed on the substrate with a space from the first laser diode, a second active layer formed on the third cladding layer and having a larger energy gap than the first active layer and a fourth cladding layer of the second conductivity type formed on the second active layer. The second laser diode further includes a height adjusting buffer layer of the first conductivity type formed between the substrate and the third cladding layer and having a thickness set for placing the second active layer at substantially the same height from the substrate surface as the height from the substrate surface of the first active layer.
摘要翻译：本发明的半导体激光二极管阵列包括：第一激光二极管，包括形成在基板上的第一导电类型的第一包层，形成在第一包层上的第一有源层和形成在第一包层上的第二导电类型的第二包层活性层; 以及第二激光二极管，其包括形成在所述基板上的第一导电类型的第三包层，其具有来自所述第一激光二极管的空间;第二有源层，形成在所述第三包层上并且具有比所述第一有源层更大的能隙; 形成在第二有源层上的第二导电类型的第四覆层。第二激光二极管还包括第一导电类型的高度调节缓冲层，其形成在基板和第三包覆层之间，并且具有设置用于将第二有源层与基板表面基本相同的高度设置的厚度，第一有源层的衬底表面。

16. 发明授权

US06556606B2 HIGH-POWERED SEMICONDUCTOR LASER ARRAY APPARATUS IN WHICH THE WAVELENGTH AND PHASE OF LASER BEAMS FROM SEMICONDUCTOR LASER UNITS ABOVE CAN BE MATCHED THOSE OF LASER BEAMS FROM SEMICONDUCTOR LASER UNITS BELOW, MANUFACTURING METHOD OF THE SEMICONDUCTOR LASER ARRAY APPARATUS AND MULTI-WAVELENGTH LASER EMITTING APPARATUS USING THE SEMICONDUCTOR LASER ARRAY APPARATUSES 有权
标题翻译：高功率半导体激光器阵列，其中来自半导体激光器单元的波长和相位的激光器单元可以与下面的半导体激光器单元匹配激光束，半导体激光阵列设备和多波长激光发射设备的制造方法半导体激光阵列设备
公开(公告)号：US06556606B2
公开(公告)日：2003-04-29
申请号：US09824470
申请日：2001-04-02
申请人： Toru Takayama , Masaaki Yuri , Seiichiro Tamai , Kunio Ito , Masaru Kazumura
发明人： Toru Takayama , Masaaki Yuri , Seiichiro Tamai , Kunio Ito , Masaru Kazumura
IPC分类号： H01S319
CPC分类号： H01S5/4068 , A61B18/20 , A61F9/008 , A61F9/00802 , A61F9/00825 , A61F2009/00863 , A61F2009/00872 , H01S5/005 , H01S5/2218 , H01S5/4025 , H01S5/405 , H01S5/4062
摘要： A semiconductor laser array apparatus, comprising: a first laser array structure which includes a plurality of first laser oscillation units arranged side by side at an interval, and a first current blocking material filling a space between each pair of adjacent laser oscillation units and, a second laser array structure which includes a plurality of second laser array structure arranged side by side at an interval and a second current blocking material filling a space between each pair of adjacent second laser oscillation units. Here, laser beams from the activated first and second laser array structures leak to the outside of those laser array structure so as to form first and second distribution regions of the laser beams respectively, and the first and second laser array structures are close to each other so that the first and second distribution regions contact or overlap with each other.
摘要翻译：一种半导体激光阵列装置，包括：第一激光阵列结构，其包括以间隔并排布置的多个第一激光振荡单元和填充每对相邻激光振荡单元之间的空间的第一电流阻挡材料，第二激光阵列结构，其包括以间隔并排布置的多个第二激光器阵列结构，以及填充每对相邻的第二激光振荡单元之间的空间的第二电流阻挡材料。这里，来自激活的第一和第二激光器阵列结构的激光束分别泄漏到那些激光阵列结构的外部，以分别形成激光束的第一和第二分布区域，并且第一和第二激光器阵列结构彼此靠近使得第一和第二分配区域彼此接触或重叠。

17. 发明授权

US06292500B1 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US06292500B1
公开(公告)日：2001-09-18
申请号：US09292013
申请日：1999-04-15
申请人： Yasuyuki Kouchi , Hideyuki Nakanishi , Masaaki Yuri , Akio Yoshikawa , Hisanori Ishiguro
发明人： Yasuyuki Kouchi , Hideyuki Nakanishi , Masaaki Yuri , Akio Yoshikawa , Hisanori Ishiguro
IPC分类号： H01S300
CPC分类号： H01S5/042 , H01L2224/48091 , H01L2224/48137 , H01L2224/49109 , H01L2224/73265 , H01L2924/1305 , H01S5/02248 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor laser device of the present invention includes: a semiconductor laser chip including an anode and a cathode; and a field effect transistor. The anode of the semiconductor laser chip is connected to the drain of the field effect transistor. The gate of the field effect transistor is connected to the drain of the field effect transistor. And the cathode of the semiconductor laser chip is connected to the source of the field effect transistor.
摘要翻译：本发明的半导体激光器件包括：包括阳极和阴极的半导体激光器芯片; 和场效应晶体管。半导体激光芯片的阳极连接到场效应晶体管的漏极。场效应晶体管的栅极连接到场效应晶体管的漏极。并且半导体激光芯片的阴极连接到场效应晶体管的源极。

18. 发明授权

US07826512B2 Semiconductor laser device including transparent electrode 有权
标题翻译：半导体激光器件包括透明电极
公开(公告)号：US07826512B2
公开(公告)日：2010-11-02
申请号：US11850603
申请日：2007-09-05
申请人： Tetsuzo Ueda , Masaaki Yuri
发明人： Tetsuzo Ueda , Masaaki Yuri
IPC分类号： H01S5/00 , H01S3/097
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0208 , H01S5/0425 , H01S5/2009 , H01S5/2214 , H01S5/2231 , H01S5/3214 , H01S2304/12 , Y10S438/973 , Y10S438/977
摘要： It is an object of the present invention to provide a semiconductor laser device with high-yielding in which a clack generated in an epitaxial growth layer is restrained and to the manufacturing method thereof, the semiconductor laser device includes a GaN substrate 1, an n-type GaN layer 2, an n-type AlGaN cladding layer 3, a n-type GaN guide layer 4, an InGaN multiple quantum well active layer 5, an undoped-GaN guide layer 6, a p-type AlGaN electron overflow suppression layer 7, a p-type GaN guide layer 8, a SiO2 blocking layer 9, an Ni/ITO cladding layer electrode 10 as a transparent electrode, a Ti/Au pad electrode 11, and a Ti/Al/Ni/Au electrode 12. The SiO2 blocking layer 9 is formed above the InGaN multiple quantum well active layer 5 so as to have an opening. The Ni/ITO cladding layer electrode 10 is formed inside the opening, and which is transparent for the light from the InGaN multiple quantum well active layer, and serves as a cladding layer.
摘要翻译：本发明的目的是提供一种具有高产量的半导体激光器件，其中在外延生长层中产生的夹克被抑制，并且其制造方法，半导体激光器件包括GaN衬底1，型GaN层2，n型AlGaN包覆层3，n型GaN引导层4，InGaN多量子阱有源层5，未掺杂GaN引导层6，p型AlGaN电子溢出抑制层7 p型GaN引导层8，SiO 2阻挡层9，作为透明电极的Ni / ITO包层电极10，Ti / Au焊盘电极11和Ti / Al / Ni / Au电极12。在InGaN多量子阱活性层5的上方形成SiO 2阻挡层9，以具有开口。 Ni / ITO包层电极10形成在开口内部，对于来自InGaN多量子阱有源层的光是透明的，并且用作覆层。

19. 发明授权

US07773646B2 Semiconductor light source and light-emitting device drive circuit 有权
标题翻译：半导体光源和发光装置驱动电路
公开(公告)号：US07773646B2
公开(公告)日：2010-08-10
申请号：US12280603
申请日：2007-03-14
申请人： Daisuke Ueda , Masaaki Yuri , Katsumi Sugiura , Kenichi Matsuda
发明人： Daisuke Ueda , Masaaki Yuri , Katsumi Sugiura , Kenichi Matsuda
IPC分类号： H01S3/00
CPC分类号： H01S5/042
摘要： A semiconductor light source includes a light-emitting device 101 having a plurality of semiconductor layers made of nitride semiconductors, and a drive circuit 102 for driving the light-emitting device 101. The drive circuit 102 performs forward drive operation, in which a forward current is supplied to the light-emitting device to make the light-emitting device 101 emit light, and reverse drive operation, in which a reverse bias is applied to the light-emitting device. The magnitude of the reverse bias is limited by the value of a reverse current flowing through the light-emitting device.
摘要翻译：半导体光源包括具有由氮化物半导体构成的多个半导体层的发光器件101和用于驱动发光器件101的驱动电路102.驱动电路102执行正向驱动操作，其中正向电流被提供给发光装置以使发光装置101发光，并且对发光装置施加反向偏压的反向驱动操作。反向偏压的大小受流过发光器件的反向电流的值的限制。

20. 发明授权

US07738525B2 Semiconductor laser and method for fabricating the same 有权
标题翻译：半导体激光器及其制造方法
公开(公告)号：US07738525B2
公开(公告)日：2010-06-15
申请号：US12065991
申请日：2007-07-09
申请人： Daisuke Ueda , Masaaki Yuri , Yoshiaki Hasegawa , Kenichi Matsuda
发明人： Daisuke Ueda , Masaaki Yuri , Yoshiaki Hasegawa , Kenichi Matsuda
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0021 , H01S5/162 , H01S5/2009 , H01S5/2201 , H01S5/305 , H01S5/3063 , H01S5/3404
摘要： A semiconductor laser (101) includes a first cladding layer (103), an active layer (105) and a second cladding layer (108). A window region (115) including fluorine, that is, an impurity element with higher electronegativity than nitrogen, is formed in the vicinity of a front end face (113) and a rear end face (114) of a laser resonator. The window region (115) is formed by exposing the front end face (113) and the rear end face (114) to carbon fluoride (CF4) plasma. The effective band gap of a portion of the active layer (105) disposed in the window region (115) is larger than the effective band gap of another portion of the active layer, and hence, it functions as an end face window structure for suppressing COD.
摘要翻译：半导体激光器（101）包括第一包层（103），有源层（105）和第二覆层（108）。在激光谐振器的前端面（113）和后端面（114）附近形成有包含氟（即，具有比氮更高的电负性的杂质元素）的窗口区域（115）。窗口区域115通过将前端面113和后端面114暴露于氟化碳（CF4）等离子体而形成。布置在窗口区域（115）中的有源层（105）的一部分的有效带隙大于有源层的另一部分的有效带隙，因此，其用作用于抑制 COD。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式