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11. 发明授权

US09304346B2 Display device including seal material with improved adhesion strength for bonding two substrates together 有权
标题翻译：显示装置包括具有改善的粘合强度的密封材料，用于将两个基板粘合在一起
公开(公告)号：US09304346B2
公开(公告)日：2016-04-05
申请号：US14112877
申请日：2012-04-16
申请人： Teruhiko Ichimura , Hideaki Sakai , Shigeki Kitamura , Hiroaki Ito
发明人： Teruhiko Ichimura , Hideaki Sakai , Shigeki Kitamura , Hiroaki Ito
IPC分类号： G02F1/1333 , G02F1/1339 , G02F1/1343
CPC分类号： G02F1/133345 , G02F1/1339 , G02F2001/134372 , G02F2201/503 , G02F2202/28
摘要： A display device includes: a first substrate and a second substrate which are located so that inner main surfaces thereof face each other; a liquid crystal layer located between the first substrate and the second substrate; a seal material located between the first substrate and the second substrate so as to surround the liquid crystal layer, the seal material bonding the first substrate and the second substrate to each other; an organic insulation film located in a seal formation area on the inner main surface of the second substrate, the organic insulation film having an opening section in the seal formation area; and an inorganic insulation film located to continue from an inside of the opening section to a surface of the organic insulation film through an inner wall surface of the opening section, the inorganic insulation film being directly covered with the seal material.
摘要翻译：显示装置包括：第一基板和第二基板，其内表面彼此面对; 位于第一基板和第二基板之间的液晶层; 位于所述第一基板和所述第二基板之间以围绕所述液晶层的密封材料，所述密封材料将所述第一基板和所述第二基板彼此接合; 有机绝缘膜，位于所述第二基板的内主表面上的密封形成区域中，所述有机绝缘膜在所述密封形成区域中具有开口部; 以及无机绝缘膜，其通过所述开口部的内壁面从所述开口部的内部延伸到所述有机绝缘膜的表面，所述无机绝缘膜直接被所述密封材料覆盖。

12. 发明授权

US5496749A Method of manufacturing thin film transistors in a liquid crystal display apparatus 失效
标题翻译：在液晶显示装置中制造薄膜晶体管的方法
公开(公告)号：US5496749A
公开(公告)日：1996-03-05
申请号：US456836
申请日：1995-06-01
申请人： Yasuhiro Nasu , Teruhiko Ichimura , Tomotaka Matsumoto
发明人： Yasuhiro Nasu , Teruhiko Ichimura , Tomotaka Matsumoto
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1368 , H01L21/22 , H01L21/223 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/78 , H01L29/786 , H01L21/786
CPC分类号： H01L29/78696 , H01L21/2236 , H01L27/1214 , H01L29/66757 , G02F1/1368 , Y10S148/15
摘要： A first sheet of photomask is used when a gate electrode and a gate bus line are formed, a second sheet of photomask is used when patterning is applied to a semiconductor film which becomes an active layer of a transistor on the gate electrode, a third sheet of photomask is used when a pixel electrode, a source electrode, a drain electrode, a drain bus line and a drain bus terminal portion are formed, and a fourth sheet of photomask is used when a film on the drain bus terminal portion, the gate bus terminal .portion and pixel portion is removed, thereby to form thin film transistors arranged in a matrix form.
摘要翻译：当形成栅电极和栅极总线时，使用第一片光掩模，当在栅电极上成为晶体管的有源层的半导体膜上进行构图时，使用第二片光掩模，第三片当形成像素电极，源电极，漏电极，漏极总线和漏极总线端子部分时使用光掩模，并且当漏极总线端子部分上的膜，栅极总线端子部分和像素部分被去除，从而形成以矩阵形式布置的薄膜晶体管。

13. 发明授权

US5480818A Method for forming a film and method for manufacturing a thin film transistor 失效
标题翻译：薄膜晶体管的制造方法和薄膜晶体管的制造方法
公开(公告)号：US5480818A
公开(公告)日：1996-01-02
申请号：US15512
申请日：1993-02-09
申请人： Tomotaka Matsumoto , Jun Inoue , Teruhiko Ichimura , Yuji Murata , Junichi Watanabe , Yoshio Nagahiro , Mari Hodate , Kenichi Oki , Masahiro Okabe
发明人： Tomotaka Matsumoto , Jun Inoue , Teruhiko Ichimura , Yuji Murata , Junichi Watanabe , Yoshio Nagahiro , Mari Hodate , Kenichi Oki , Masahiro Okabe
IPC分类号： H01L21/205 , H01L21/336 , H01L21/86 , H01L29/78 , H01L29/786
CPC分类号： C23C16/45525 , C23C16/403 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L21/86 , H01L29/66757 , H01L29/66765 , H01L29/7833 , H01L29/78621 , H01L29/78675 , H01L29/78678 , Y10S148/15 , Y10S148/169
摘要： A crystal silicon film deposited on an insulating film made of a binary system material or a binary system semiconductor film formed by an atomic layer deposition method has a grain as large as approximately 200 nm. Thus, the mobility of carriers is increased. The crystal silicon thereof is grown within a temperature range of 250.degree. C. to 400.degree. C. Accordingly, when a planar type thin film transistor, an inverted stagger type thin film transistor or a stagger type thin film transistor is formed using crystal silicon formed on these films made of a binary system material, transistor characteristics thereof are improved. Further, when an impurity containing silicon film is formed by a chemical vapor deposition method between a source electrode and a drain electrode of a thin film transistor and a silicon film connected to these electrodes, and a flow rate of impurity containing gas is regulated so that impurity density becomes larger as approaching to the source electrode and the drain electrode, a leakage current in an OFF-state of the transistor is reduced. Since the impurity containing silicon film is grown by a chemical vapor deposition method in this case, the impurity density thereof can be controlled easily and the control accuracy is also improved.
摘要翻译：沉积在由二元系材料制成的绝缘膜上的晶体硅膜或通过原子层沉积法形成的二元系统半导体膜具有大至约200nm的晶粒。因此，载波的移动性增加。其晶体硅在250℃至400℃的温度范围内生长。因此，当使用形成的晶体硅形成平面型薄膜晶体管，反向交错型薄膜晶体管或交错型薄膜晶体管时在由二元系材料制成的这些膜上，其晶体管特性得到改善。此外，当通过化学气相沉积法在薄膜晶体管的源电极和漏电极与连接到这些电极的硅膜之间形成含硅膜的杂质时，调节含杂质气体的流量，使得随着接近源电极和漏电极的杂质密度变大，晶体管截止状态下的漏电流减小。由于在这种情况下通过化学气相沉积法生长含有杂质的硅膜，因此可以容易地控制其杂质浓度，并且还提高了控制精度。

14. 发明申请

US20140043574A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20140043574A1
公开(公告)日：2014-02-13
申请号：US14112877
申请日：2012-04-16
申请人： Teruhiko Ichimura , Hideaki Sakai , Shigeki Kitamura , Hiroaki Ito
发明人： Teruhiko Ichimura , Hideaki Sakai , Shigeki Kitamura , Hiroaki Ito
IPC分类号： G02F1/1333
CPC分类号： G02F1/133345 , G02F1/1339 , G02F2001/134372 , G02F2201/503 , G02F2202/28
摘要： A display device includes: a first substrate and a second substrate which are located so that inner main surfaces thereof face each other; a liquid crystal layer located between the first substrate and the second substrate; a seal material located between the first substrate and the second substrate so as to surround the liquid crystal layer, the seal material bonding the first substrate and the second substrate to each other; an organic insulation film located in a seal formation area on the inner main surface of the second substrate, the organic insulation film having an opening section in the seal formation area; and an inorganic insulation film located to continue from an inside of the opening section to a surface of the organic insulation film through an inner wall surface of the opening section, the inorganic insulation film being directly covered with the seal material.
摘要翻译：显示装置包括：第一基板和第二基板，其内表面彼此面对; 位于第一基板和第二基板之间的液晶层; 位于所述第一基板和所述第二基板之间以围绕所述液晶层的密封材料，所述密封材料将所述第一基板和所述第二基板彼此接合; 有机绝缘膜，位于所述第二基板的内主表面上的密封形成区域中，所述有机绝缘膜在所述密封形成区域中具有开口部; 以及无机绝缘膜，其通过所述开口部的内壁面从所述开口部的内部延伸到所述有机绝缘膜的表面，所述无机绝缘膜直接被所述密封材料覆盖。

15. 发明授权

US06425809B1 Polishing apparatus 失效
标题翻译：抛光设备
公开(公告)号：US06425809B1
公开(公告)日：2002-07-30
申请号：US09504619
申请日：2000-02-15
申请人： Teruhiko Ichimura
发明人： Teruhiko Ichimura
IPC分类号： B24B500
CPC分类号： B24B37/30 , B24B37/26 , B24B49/16
摘要： A polishing apparatus for polishing a plate-like member such as semiconductor wafer with a high degree of polished surface flatness is provided. The apparatus comprises a turntable having a surface provided on its upper surface with a polishing pad having an upper or polishing surface, and a carrier having an article holding surface for holding thereon a plate-like article. The carrier is adapted to press a surface of the plate-like article against the polishing surface of the polishing pad to polish and flatten the surface of the plate-like article by relative movement between the article and the polishing surface. An annular member is provided along the peripheral edge of the plate-like article between the article holding surface and the plate-like article to form a chamber therebetween, and a pressurized fluid source is fluidly connected to the chamber for supplying a pressurized fluid into the chamber. The polishing surface of the polishing pad is provided with grooves to divide the polishing surface into a number of sections. The chamber may be divided into outer and inner chamber sections so that the pressures in those chamber sections can be controlled, respectively.
摘要翻译：提供了用于抛光具有高抛光表面平坦度的诸如半导体晶片的板状构件的抛光装置。该设备包括一转台，该转盘具有在其上表面上设有抛光垫的表面，该抛光垫具有上表面或抛光表面，以及具有用于保持板状物品的物品保持表面的托架。载体适于将板状制品的表面压靠在抛光垫的抛光表面上，以通过制品和抛光表面之间的相对运动来抛光和平坦化板状制品的表面。沿着板状物品的周缘在物品保持表面和板状物品之间设置环形构件，以在它们之间形成腔室，加压流体源流体地连接到腔室，用于将加压流体供应到房间。抛光垫的抛光表面设置有将抛光表面分成多个部分的凹槽。腔室可分为外腔室和内腔室，从而可分别控制腔室部分中的压力。

16. 发明授权

US5462885A Method of manufacturing thin film transistors in a liquid crystal display apparatus 失效
公开(公告)号：US5462885A
公开(公告)日：1995-10-31
申请号：US366914
申请日：1994-12-30
申请人： Yasuhiro Nasu , Teruhiko Ichimura , Tomotaka Matsumoto
发明人： Yasuhiro Nasu , Teruhiko Ichimura , Tomotaka Matsumoto
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1368 , H01L21/22 , H01L21/223 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/78 , H01L29/786 , H01L21/786
CPC分类号： H01L29/78696 , H01L21/2236 , H01L27/1214 , H01L29/66757 , G02F1/1368 , Y10S148/15
摘要： A first sheet of photomask is used when a gate electrode and a gate bus line are formed, a second sheet of photomask is used when patterning is applied to a semiconductor film which becomes an active layer of a transistor on the gate electrode, a third sheet of photomask is used when a pixel electrode, a source electrode, a drain electrode, a drain bus line and a drain bus terminal portion are formed, and a fourth sheet of photomask is used when a film on the drain bus terminal portion, the gate bus terminal portion and pixel portion is removed, thereby to form thin film transistors arranged in a matrix form.

17. 发明授权

US06435956B1 Wafer holder and polishing device 失效
标题翻译：基板保持装置和抛光装置
公开(公告)号：US06435956B1
公开(公告)日：2002-08-20
申请号：US09647560
申请日：2000-10-02
申请人： Shin Ohwada , Teruhiko Ichimura
发明人： Shin Ohwada , Teruhiko Ichimura
IPC分类号： B24B2900
CPC分类号： B24B37/30 , B24B49/10 , B24B49/14 , B24B49/16 , H01L21/30625 , H01L21/6838
摘要： The present invention provides a substrate holding apparatus which can adjust a holding state of a substrate in accordance with a polishing state, and maintain uniformity of a polishing amount over an entire surface of the substrate, or control the polishing amount intentionally. The substrate holding apparatus comprises a holding plate having a holding surface for a substrate, a cover element for covering a backside surface of the holding plate to form a sealed back pressure space at the backside surface side, a plurality of through-holes distributed over the substantially entire holding surface for allowing the holding surface to communicate with the back pressure space, a division element removably provided for dividing the back pressure space between the holding plate and the cover element into a plurality of predetermined sealed divisional spaces in a plane, and a back pressure controller for individually controlling back pressures in the divisional spaces.
摘要翻译：本发明提供一种能够根据研磨状态调整基板的保持状态，并且保持基板的整个表面的研磨量的均匀性，或有意地控制研磨量的基板保持装置。基板保持装置包括：具有用于基板的保持面的保持板，覆盖保持板的背面的盖元件，在背面侧形成密封的背压空间;多个贯通孔，用于允许保持表面与背压空间连通的基本上整体的保持表面，可移除地设置用于将保持板和盖元件之间的背压空间分成多个预定的平面中的密封分割空间的分隔元件，用于单独控制分区中的背压的背压控制器。

18. 发明授权

US5407845A Method of manufacturing thin film transistors in a liquid crystal display apparatus 失效
标题翻译：在液晶显示装置中制造薄膜晶体管的方法
公开(公告)号：US5407845A
公开(公告)日：1995-04-18
申请号：US135030
申请日：1993-10-13
申请人： Yasuhiro Nasu , Teruhiko Ichimura , Tomotaka Matsumoto
发明人： Yasuhiro Nasu , Teruhiko Ichimura , Tomotaka Matsumoto
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1368 , H01L21/22 , H01L21/223 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/78 , H01L29/786 , H01L21/265
CPC分类号： H01L29/78696 , H01L21/2236 , H01L27/1214 , H01L29/66757 , G02F1/1368 , Y10S148/15
摘要： A first sheet of photomask is used when a gate electrode and a gate bus line are formed, a second sheet of photomask is used when patterning is applied to a semiconductor film which becomes an active layer of a transistor on the gate electrode, a third sheet of photomask is used when a pixel electrode, a source electrode, a drain electrode, a drain bus line and a drain bus terminal portion are formed, and a fourth sheet of photomask is used when a film on the drain bus terminal portion, the gate bus terminal portion and pixel portion is removed, thereby to form thin film transistors arranged in a matrix form.
摘要翻译：当形成栅电极和栅极总线时，使用第一片光掩模，当在栅电极上成为晶体管的有源层的半导体膜上进行构图时，使用第二片光掩模，第三片当形成像素电极，源电极，漏电极，漏极总线和漏极总线端子部分时使用光掩模，并且当漏极总线端子部分上的膜，栅极总线端子部分和像素部分被去除，从而形成以矩阵形式布置的薄膜晶体管。

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