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11. 发明授权

US07439605B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07439605B2
公开(公告)日：2008-10-21
申请号：US11117331
申请日：2005-04-29
申请人： Hitoshi Kobayashi , Tomoki Inoue , Satoshi Aida , Yasushi Takahashi
发明人： Hitoshi Kobayashi , Tomoki Inoue , Satoshi Aida , Yasushi Takahashi
IPC分类号： H01L29/76
CPC分类号： H01L29/7802 , H01L21/26586 , H01L29/0634 , H01L29/0653 , H01L29/0696 , H01L29/405 , H01L29/408 , H01L29/66712 , H01L29/7801
摘要： A semiconductor device include a plurality of active element cells including first element regions of a first conductivity type and second element regions of a second conductivity type, the second element regions disposed between the first element regions; and isolation regions disposed between the active element cells so as to isolate the active element cells from each other, the isolation regions being filled with a plurality of semi-insulating particles including granular insulators covered by semiconductor films.
摘要翻译：半导体器件包括多个有源元件单元，其包括第一导电类型的第一元件区域和第二导电类型的第二元件区域，第二元件区域设置在第一元件区域之间; 以及设置在有源元件单元之间以隔离有源元件元件的隔离区域，隔离区域填充有多个包含半导体膜覆盖的粒状绝缘体的半绝缘粒子。

12. 发明申请

US20060108600A1 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060108600A1
公开(公告)日：2006-05-25
申请号：US11265208
申请日：2005-11-03
申请人： Hideki Okumura , Hitoshi Kobayashi , Masanobu Tsuchitani , Satoshi Aida , Shigeo Kouzuki , Masaru Izumisawa , Satoshi Taji , Kenichi Tokano
发明人： Hideki Okumura , Hitoshi Kobayashi , Masanobu Tsuchitani , Satoshi Aida , Shigeo Kouzuki , Masaru Izumisawa , Satoshi Taji , Kenichi Tokano
IPC分类号： H01L29/423
CPC分类号： H01L29/66712 , H01L29/0634 , H01L29/0653 , H01L29/0661 , H01L29/0696 , H01L29/7811
摘要： The present application provides a semiconductor device including a first-conductivity type semiconductor substrate, a pillar structure portion formed on the first-conductivity type semiconductor substrate and formed of five semiconductor pillar layers arranged in one direction parallel to a main surface of the first-conductivity type semiconductor substrate, and isolation insulating portions formed on the first-conductivity type semiconductor substrate and sandwiching the pillar structure portion between the isolation insulating portions, wherein the pillar structure portion is formed of a first first-conductivity type pillar layer, a second first-conductivity type pillar layer and a third first-conductivity type pillar layer which sandwich the first first-conductivity type pillar layer, a first second-conductivity type pillar layer provided between the first first-conductivity type pillar layer and the second first-conductivity type pillar layer, and a second second-conductivity type pillar layer provided between the first first-conductivity type pillar layer and the third first-conductivity type pillar layer.
摘要翻译：本申请提供了一种半导体器件，其包括第一导电型半导体衬底，形成在第一导电型半导体衬底上的柱结构部分，并且由平行于第一导电型主要表面的一个方向排列的五个半导体柱层以及形成在第一导电型半导体基板上并将柱结构部分夹在隔离绝缘部分之间的隔离绝缘部分，其中柱结构部分由第一第一导电型柱层，第二第一导电型支柱层，导电型柱层和夹着第一第一导电型柱层的第三第一导电型柱层，设置在第一第一导电型柱层和第二第一导电型柱之间的第一第二导电型柱层层和第二第二导电类型柱层，设置在第一第一导电型柱层和第三第一导电型柱层之间。

13. 发明授权

US07034346B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07034346B2
公开(公告)日：2006-04-25
申请号：US10445952
申请日：2003-05-28
申请人： Kazuya Nakayama , Satoshi Aida , Shigeo Kouzuki , Masaru Izumisawa
发明人： Kazuya Nakayama , Satoshi Aida , Shigeo Kouzuki , Masaru Izumisawa
IPC分类号： H01L27/148
CPC分类号： H01L29/7802 , H01L21/26586 , H01L29/0696 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/41766 , H01L29/4232 , H01L29/42364 , H01L29/42376 , H01L29/4933 , H01L29/66712 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device according to an embodiment of the present invention has a gate electrode which is formed on a semiconductor substrate via a gate insulating film, and which has a slit portion; side wall films formed at both side faces of the gate electrode and at side walls of the slit portion, and which fill an interior of the slit portion and cover the gate insulating film directly beneath the slit portion; and an interlayer insulating film formed to cover the gate electrode and the side wall films.
摘要翻译：根据本发明的实施例的半导体器件具有通过栅极绝缘膜形成在半导体衬底上并具有狭缝部分的栅电极; 形成在栅电极的两个侧面和狭缝部的侧壁处的侧壁膜，并且填充狭缝部分的内部并在狭缝部分正下方覆盖栅极绝缘膜; 以及形成为覆盖栅电极和侧壁膜的层间绝缘膜。

14. 发明申请

US20050250322A1 Semiconductor device and its manufacturing method 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20050250322A1
公开(公告)日：2005-11-10
申请号：US11094190
申请日：2005-03-31
申请人： Satoshi Aida , Shigeo Kouzuki , Satoshi Yanagisawa , Masaru Izumisawa , Hironori Yoshioka
发明人： Satoshi Aida , Shigeo Kouzuki , Satoshi Yanagisawa , Masaru Izumisawa , Hironori Yoshioka
IPC分类号： H01L29/78 , H01L21/265 , H01L21/336 , H01L21/44 , H01L29/06 , H01L29/10 , H01L29/423
CPC分类号： H01L29/7811 , H01L21/26586 , H01L29/0634 , H01L29/0649 , H01L29/0653 , H01L29/0696 , H01L29/1095 , H01L29/4238 , H01L29/66712 , H01L29/7802
摘要： There is provided a power MISFET which includes a semiconductor region of a first conductivity, a semiconductor base region of a second conductivity, a pillar region, a first major electrode region of a first conductivity on the base region, a second major electrode region connected with at least the semiconductor region and a part of the pillar region, a control electrode and an electrode pad connected with the control electrode. The pillar region including a first region of a first conductivity type and a second region of a second conductivity type is not formed under the electrode pad. Also, a method for manufacturing a MISFET is provided.
摘要翻译：提供了一种功率MISFET，其包括第一导电性的半导体区域，第二导电性的半导体基极区域，柱状区域，基极区域上的第一导电性的第一主电极区域，与第二导电性区域连接的第二主电极区域至少半导体区域和一部分柱区域，控制电极和与控制电极连接的电极焊盘。包括第一导电类型的第一区域和第二导电类型的第二区域的柱区域不形成在电极焊盘下面。另外，提供了用于制造MISFET的方法。

15. 发明申请

US20050194638A1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US20050194638A1
公开(公告)日：2005-09-08
申请号：US10975356
申请日：2004-10-29
申请人： Shigeo Kouzuki , Satoshi Aida , Satoshi Yanagisawa , Masaru Izumisawa , Hironori Yoshioka
发明人： Shigeo Kouzuki , Satoshi Aida , Satoshi Yanagisawa , Masaru Izumisawa , Hironori Yoshioka
IPC分类号： H01L23/48 , H01L29/76 , H01L29/78
CPC分类号： H01L29/7802 , H01L23/49524 , H01L23/49562 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/31 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/80 , H01L24/83 , H01L24/85 , H01L29/0634 , H01L29/0653 , H01L29/0696 , H01L29/1095 , H01L2224/04042 , H01L2224/05624 , H01L2224/05647 , H01L2224/0603 , H01L2224/37124 , H01L2224/37147 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/4103 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48095 , H01L2224/48247 , H01L2224/48472 , H01L2224/48624 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/4903 , H01L2224/49051 , H01L2224/49171 , H01L2224/83801 , H01L2224/84205 , H01L2224/85205 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/3512 , H01L2224/83205 , H01L2924/00012
摘要： A semiconductor device comprises a semiconductor element and a conductive member. The semiconductor element has a semiconductor substrate having first and second major surfaces; a semiconductor layer formed on the first major surface of the semiconductor substrate; a plurality of trenches formed on the semiconductor layer, the trenches being parallel to each other and extending to a first direction; filling material filling the trenches; a first electrode pad provided on the semiconductor layer and connected electrically to a first major electrode; a second major electrode provided on the second major surface; and a gate electrode pad provided on the semiconductor layer and connected to a gate electrode which controls conduction between the first major electrode and the second major electrode. The conductive member is connected to at least one of the first electrode pad and the gate electrode pad via a first contact area. A leading-out direction of the conductive member is substantially parallel to the first direction.
摘要翻译：半导体器件包括半导体元件和导电元件。半导体元件具有具有第一和第二主表面的半导体衬底; 形成在半导体衬底的第一主表面上的半导体层; 形成在所述半导体层上的多个沟槽，所述沟槽彼此平行并延伸到第一方向; 填充沟槽的填充材料; 设置在所述半导体层上并与第一主电极电连接的第一电极焊盘; 设置在第二主表面上的第二主电极; 以及设置在所述半导体层上并与控制所述第一主电极和所述第二主电极之间的导通的栅电极连接的栅电极焊盘。导电构件经由第一接触区域连接到第一电极焊盘和栅电极焊盘中的至少一个。导电构件的导出方向基本上平行于第一方向。

16. 发明授权

US06849900B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06849900B2
公开(公告)日：2005-02-01
申请号：US10606755
申请日：2003-06-27
申请人： Satoshi Aida , Shigeo Kouzuki , Masaru Izumisawa , Hironori Yoshioka , Wataru Saito
发明人： Satoshi Aida , Shigeo Kouzuki , Masaru Izumisawa , Hironori Yoshioka , Wataru Saito
IPC分类号： H01L21/336 , H01L29/06 , H01L29/739 , H01L29/78 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/0653 , H01L29/0696 , H01L29/7802
摘要： A semiconductor device includes: a semiconductor substrate of a first conductivity type; a semiconductor layer of a first conductivity type formed on a first main surface of the semiconductor substrate, the semiconductor layer including a first region for a cell portion and a second region for a terminating portion, the second region being positioned in an outer periphery of the first region, the terminating portion maintaining breakdown voltage by extending a depletion layer to relieve an electric field; junction pairs of semiconductor layers periodically arranged so as to form a line from the first region to the second region in a first direction parallel to the first main surface in the semiconductor layer and having mutually opposite conductivity types of impurities, each of the junction pair being composed of a first impurity diffusion layer of a second conductivity type formed from a surface of the semiconductor layer toward the semiconductor substrate and a second impurity diffusion layer of a first conductivity type formed from the surface of the semiconductor layer toward the semiconductor substrate and adjacently to the first impurity diffusion layer; a base layer of a second conductivity type selectively formed on each surface layer of the junction pairs which are formed in the first region, so as to connect with the first impurity diffusion layer and the second impurity diffusion layer in the same manner; a source layer of a first conductivity type selectively formed on each surface layer of the base layers of the second conductive type; a control electrode formed above each surface of the base layers and above each surface of the source layers via an insulating film; a first main electrode formed so as to cover the control electrode and to contact the source layers and the base layers in the same manner; and a second main electrode formed on a second main surface opposite to the first main surface of the semiconductor substrate.
摘要翻译：半导体器件包括：第一导电类型的半导体衬底; 形成在所述半导体衬底的第一主表面上的第一导电类型的半导体层，所述半导体层包括用于单元部分的第一区域和用于端接部分的第二区域，所述第二区域位于所述半导体衬底的外周中第一区域，终端部分通过延伸耗尽层来缓和电场来保持击穿电压; 在半导体层中平行于第一主表面的第一方向上并且具有相互相反的导电类型的杂质的周期性地布置以便形成从第一区域到第二区域的线的结对对，由半导体层的朝向半导体衬底的表面形成的第二导电类型的第一杂质扩散层和由半导体层的表面朝向半导体衬底形成的第一导电类型的第二杂质扩散层，并且相邻于第一杂质扩散层; 选择性地形成在形成在第一区域的结对的每个表面层上的第二导电类型的基底层，以与第一杂质扩散层和第二杂质扩散层相同的方式连接; 选择性地形成在第二导电类型的基底层的每个表面层上的第一导电类型的源极层; 控制电极，其经由绝缘膜形成在所述基底层的每个表面上方和所述源极层的每个表面上方; 形成为覆盖控制电极并以相同的方式接触源极层和基极层的第一主电极; 以及形成在与所述半导体衬底的所述第一主表面相对的第二主表面上的第二主电极。

17. 发明授权

US06700156B2 Insulated gate semiconductor device 有权
标题翻译：绝缘栅半导体器件
公开(公告)号：US06700156B2
公开(公告)日：2004-03-02
申请号：US10321613
申请日：2002-12-18
申请人： Wataru Saitoh , Ichiro Omura , Satoshi Aida
发明人： Wataru Saitoh , Ichiro Omura , Satoshi Aida
IPC分类号： H01L2976
CPC分类号： H01L29/7802 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/42368 , H01L29/42372 , H01L29/7395 , H01L29/7813
摘要： An insulated gate semiconductor device includes a first semiconductor layer of a first conductivity type. A plurality of second semiconductor layers of a second conductivity type selectively formed in a surface area of the first semiconductor layer. At least one third semiconductor layer of the first conductivity type is formed in a surface area of each of the second semiconductor layers. A fourth semiconductor layer is formed on a bottom of the first semiconductor layer. At least one fifth semiconductor layer of the second conductivity type is provided in the first semiconductor layer and connected to at least one of the plurality of second semiconductor layers. The fifth semiconductor layer has impurity concentration that is lower than that of the second semiconductor layers.
摘要翻译：绝缘栅半导体器件包括第一导电类型的第一半导体层。选择性地形成在第一半导体层的表面区域中的多个第二导电类型的第二半导体层。第一导电类型的至少一个第三半导体层形成在每个第二半导体层的表面区域中。在第一半导体层的底部形成第四半导体层。第二导电类型的至少一个第五半导体层被提供在第一半导体层中并连接到多个第二半导体层中的至少一个。第五半导体层的杂质浓度低于第二半导体层的杂质浓度。

18. 发明授权

US5465625A Heat measurement apparatus for inspecting therapeutic energy waves 失效
标题翻译：用于检查治疗能量波的热测量装置
公开(公告)号：US5465625A
公开(公告)日：1995-11-14
申请号：US280546
申请日：1994-07-26
申请人： Katsuhiko Fujimoto , Satoshi Aida , Masamichi Oyanagi , Nobuki Kudo
发明人： Katsuhiko Fujimoto , Satoshi Aida , Masamichi Oyanagi , Nobuki Kudo
IPC分类号： A61B17/00 , A61B17/22 , G01H3/00 , G01H3/12 , G01H11/08 , G01L11/00 , G01L7/00 , G01K1/08
CPC分类号： G01H3/125 , A61B17/22029 , G01H3/005 , A61B2017/00712
摘要： This invention relates to a heat measurement apparatus for inspecting therapeutic energy waves, e.g. shock waves or ultrasonic waves. The heat measurement apparatus for inspecting focal position and pressure of therapeutic energy waves comprises a heat sensing sheet which changes visually or electrically according to the heat, and a marker for setting the focal position, mounted on the heat sensing sheet.
摘要翻译：本发明涉及一种用于检查治疗能量波的热测量装置，冲击波或超声波。用于检查治疗能量波的焦点位置和压力的热测量装置包括根据热量在视觉上或电气上变化的热敏片以及安装在感热片上的用于设置焦点位置的标记。

19. 发明授权

US5243985A Lithotrity apparatus having a missed-shot preventive function 失效
公开(公告)号：US5243985A
公开(公告)日：1993-09-14
申请号：US707784
申请日：1991-05-30
申请人： Satoshi Aida , Nobuyuki Iwama
发明人： Satoshi Aida , Nobuyuki Iwama
IPC分类号： A61B17/22
CPC分类号： A61B17/2258
摘要： An electromagnetic induction type lithotrity apparatus, having a shock-wave source utilizing electromagnetic induction to generate a shock-wave, and focusing means to focus the shock-wave at a predetermined position, for focusing and irradiating the shock-wave toward a stone in the body of a patient which is located at the predetermined position, thereby pulverizing the stone. The apparatus comprising a drive section (sending section) for driving the shock-wave source by a voltage lower than that for generating the shock-wave so as to send a low-pressure wave lower in pressure than the shock-wave to the inside of the body, an echo receiving section, including a piezoelectric film arranged in front of the shock-wave source, for receiving a low-pressure echo reflected from the body, an echo detecting section for detecting the intensity of an echo, among the echoes received by the echo receiving section, reflected by a focal zone of the shock-wave, and a control section for comparing the intensity of the echo detected by the echo detecting section with a predetermined value, sending a predetermined signal to the drive section (sending section) based on the comparison result, switching the drive voltage of the shock-wave source to a high voltage sufficient for lithotrity, and generating a signal for driving the shock-wave source.

20. 发明授权

US5026120A Headrest assembly for vehicle seats 失效
标题翻译：汽车座椅头枕组件
公开(公告)号：US5026120A
公开(公告)日：1991-06-25
申请号：US556389
申请日：1990-07-24
申请人： Nobuhiko Takeda , Isao Morishita , Satoshi Aida
发明人： Nobuhiko Takeda , Isao Morishita , Satoshi Aida
IPC分类号： A47C7/38 , B60N2/48
CPC分类号： B60N2/4852 , B60N2/4808 , Y10T74/18576
摘要： A headrest assembly for vehicle seats includes a first stationary link and a second link connected to the first link and side walls of a bracket for padded member. A rod is rotatably connected to the first link and received in slots on the bracket. When a motor mounted on the bracket is actuated, a screw member engaged with a nut member which is fixed on the rod causes the bracket to be swiveled.
摘要翻译：用于车辆座椅的头枕组件包括第一固定连杆和连接到第一连杆的第二连杆和用于衬垫部件的托架的侧壁。杆可旋转地连接到第一连杆并且被接收在支架上的槽中。当安装在支架上的电动机被致动时，与固定在杆上的螺母构件接合的螺钉构件使支架旋转。

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