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    • 12. 发明申请
    • Liquid crystal display device
    • 液晶显示装置
    • US20070058101A1
    • 2007-03-15
    • US11510561
    • 2006-08-28
    • Masahiro KawasakiTakeo ShibaShuji ImazekiMasahiko Ando
    • Masahiro KawasakiTakeo ShibaShuji ImazekiMasahiko Ando
    • G02F1/136G02F1/1337
    • G02F1/1368G02F1/133723G02F1/133784G02F2202/02
    • It is an object of the present invention to prevent degradation of an organic semiconductor film caused in forming an alignment layer and to inexpensively provide a liquid crystal display device with a high-performance organic thin film transistor. According to the invention, in a liquid crystal display device that includes: a thin film transistor substrate having such members as a thin film transistor composed of a gate electrode, a gate insulating film, source/drain electrodes, and a semiconductor layer, a line, and a pixel electrode; and an opposing substrate supporting a liquid crystal layer between the thin film transistor substrate and the opposing substrate, no alignment layer having a function of controlling alignment of molecules in the liquid crystal layer is interposed between the semiconductor layer and the liquid crystal layer.
    • 本发明的目的是防止在形成取向层时引起的有机半导体膜的劣化,并且廉价地提供具有高性能有机薄膜晶体管的液晶显示装置。 根据本发明,在液晶显示装置中,包括:薄膜晶体管基板,其具有由栅电极,栅绝缘膜,源/漏电极和半导体层组成的薄膜晶体管的构件,线 ,和像素电极; 以及在薄膜晶体管基板和对置基板之间支撑液晶层的相对基板,在半导体层和液晶层之间插入不具有控制液晶层中的分子取向功能的取向层。
    • 18. 发明申请
    • Semiconductor device and manufacturing method thereof
    • 半导体装置及其制造方法
    • US20050056897A1
    • 2005-03-17
    • US10786097
    • 2004-02-26
    • Masahiro KawasakiShuji ImazekiMasahiko Ando
    • Masahiro KawasakiShuji ImazekiMasahiko Ando
    • H01L51/05H01L23/62H01L29/786H01L51/00H01L51/30
    • H01L51/0545H01L51/0021H01L51/0037H01L51/0052H01L51/0516
    • An object of the present invention is to provide a semiconductor device such as a display device, ID tag, sensor or the like at low cost by using a bottom contact type organic TFT as a switching element. In the present invention, the semiconductor layer of the bottom contact type organic TFT is formed of a polycrystalline material, and the taper width of each of the source and drain electrodes of the TFT in the direction of the channel length is smaller than the average particle size of semiconductor crystals grown on the source and drain electrodes. Alternatively, the side on the channel side of each of the source and drain electrodes of the bottom contact type organic TFT is formed so as to be convex upward with respect to the substrate surface. Alternatively, an organic compound layer different from the semiconductor layer of the bottom contact type organic TFT is made present between each of the source and drain electrodes of the bottom contact type organic TFT and said semiconductor layer, in a thickness of not more than 10 Å and not less than 1 Å.
    • 本发明的目的是通过使用底接触型有机TFT作为开关元件,以低成本提供诸如显示装置,ID标签,传感器等的半导体器件。 在本发明中,底部接触型有机TFT的半导体层由多晶材料形成,TFT的源极和漏极的沟道长度方向的锥形宽度小于平均粒子 在源极和漏极上生长的半导体晶体的尺寸。 或者,底接触型有机TFT的源电极和漏电极的沟道侧的一侧形成为相对于衬底表面向上凸起。 或者,在底接触型有机TFT和所述半导体层的每个源电极和漏电极之间存在不同于底接触型有机TFT的半导体层的有机化合物层,其厚度不大于 并且不小于1。