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11. 发明授权

US08129271B2 Film forming method, film forming apparatus and storage medium 失效
标题翻译：成膜方法，成膜装置和储存介质
公开(公告)号：US08129271B2
公开(公告)日：2012-03-06
申请号：US12374216
申请日：2007-07-17
申请人： Yasuhiko Kojima , Taro Ikeda , Tatsuo Hatano
发明人： Yasuhiko Kojima , Taro Ikeda , Tatsuo Hatano
IPC分类号： H01L21/44 , C23C16/00
CPC分类号： C23C16/18 , H01L21/28556 , H01L21/76877 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A film forming method is provided with a substrate placing step wherein a substrate is placed in a process chamber in an airtight status; a first film forming step wherein the process chamber is supplied with water vapor and a material gas including an organic compound of copper, and an adhered layer of copper is formed on the substrate; an exhaust step wherein the water vapor and the material gas in the process chamber are exhausted; and a second film forming step wherein the process chamber is resupplied with only the material gas and a copper film is further formed on the adhered layer.
摘要翻译：一种成膜方法具有基板放置步骤，其中将基板以气密状态放置在处理室中; 第一成膜步骤，其中处理室被供应水蒸汽和包含铜的有机化合物的原料气体，并且在基板上形成铜的附着层; 排气步骤，其中处理室中的水蒸汽和原料气体被排出; 以及第二成膜步骤，其中处理室仅用原料气体再供给，并且在附着层上进一步形成铜膜。

12. 发明申请

US20100015799A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS, COMPUTER PROGRAM AND STORAGE MEDIUM 有权
标题翻译：半导体器件制造方法，半导体器件制造设备，计算机程序和存储介质
公开(公告)号：US20100015799A1
公开(公告)日：2010-01-21
申请号：US12374228
申请日：2007-06-15
申请人： Yasuhiko Kojima , Taro Ikeda , Tatsuo Hatano
发明人： Yasuhiko Kojima , Taro Ikeda , Tatsuo Hatano
IPC分类号： H01L21/3205 , C23C16/54
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/18 , H01L21/76843 , H01L21/76855 , H01L21/76858 , H01L21/76867 , H01L21/76877
摘要： A semiconductor device, which suppresses formation of an organic impurity layer and has excellent adhesiveness to a copper film and a metal to be a base, is manufactured. A substrate (wafer W) coated with a barrier metal layer (base film) 13 formed of a metal having a high oxidation tendency, such as titanium, is placed in a processing chamber. At the time of starting to supply water vapor or after that, a material gas containing an organic compound of copper (for instance, Cu(hfac)TMVS) is supplied, and a copper film is formed on the surface of the barrier metal layer 13 whereupon the oxide layer 13a is formed by the water vapor. Then, heat treatment is performed on the wafer W, and the oxide layer 13a is converted into an alloy layer 13b of a metal and copper which constitute the barrier metal layer 13.
摘要翻译：制造抑制有机杂质层的形成并且对铜膜和作为基底的金属具有优异的粘附性的半导体器件。涂覆有由氧化倾向高的金属形成的阻挡金属层（基膜）13的基板（晶片W）如钛，被放置在处理室中。在开始供给水蒸气之后，供给包含铜有机化合物（例如Cu（hfac）TMVS）的原料气体，并且在阻挡金属层13的表面上形成铜膜于是氧化物层13a由水蒸汽形成。然后，对晶片W进行热处理，将氧化物层13a转换成构成阻挡金属层13的金属和铜的合金层13b。

13. 发明授权

US08133811B2 Semiconductor device manufacturing method, semiconductor device manufacturing apparatus, computer program and storage medium 有权
标题翻译：半导体器件制造方法，半导体器件制造装置，计算机程序和存储介质
公开(公告)号：US08133811B2
公开(公告)日：2012-03-13
申请号：US12374228
申请日：2007-06-15
申请人： Yasuhiko Kojima , Taro Ikeda , Tatsuo Hatano
发明人： Yasuhiko Kojima , Taro Ikeda , Tatsuo Hatano
IPC分类号： H01L21/44
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/18 , H01L21/76843 , H01L21/76855 , H01L21/76858 , H01L21/76867 , H01L21/76877
摘要： A semiconductor device, which suppresses formation of an organic impurity layer and has excellent adhesiveness to a copper film and a metal to be a base, is manufactured. A substrate (wafer W) coated with a barrier metal layer (base film) 13 formed of a metal having a high oxidation tendency, such as titanium, is placed in a processing chamber. At the time of starting to supply water vapor or after that, a material gas containing an organic compound of copper (for instance, Cu(hfac)TMVS) is supplied, and a copper film is formed on the surface of the barrier metal layer 13 whereupon the oxide layer 13a is formed by the water vapor. Then, heat treatment is performed on the wafer W, and the oxide layer 13a is converted into an alloy layer 13b of a metal and copper which constitute the barrier metal layer 13.
摘要翻译：制造抑制有机杂质层的形成并且对铜膜和作为基底的金属具有优异的粘附性的半导体器件。涂覆有由氧化倾向高的金属形成的阻挡金属层（基膜）13的基板（晶片W）如钛，被放置在处理室中。在开始供给水蒸气之后，供给包含铜有机化合物（例如Cu（hfac）TMVS）的原料气体，并且在阻挡金属层13的表面上形成铜膜于是氧化物层13a由水蒸汽形成。然后，对晶片W进行热处理，将氧化物层13a转换成构成阻挡金属层13的金属和铜的合金层13b。

14. 发明申请

US20090181538A1 FILM FORMING METHOD, FILM FORMING APPARATUS AND STORAGE MEDIUM 失效
标题翻译：薄膜成型方法，薄膜成型装置和储存介质
公开(公告)号：US20090181538A1
公开(公告)日：2009-07-16
申请号：US12374216
申请日：2007-07-17
申请人： Yasuhiko Kojima , Taro Ikeda , Tatsuo Hatano
发明人： Yasuhiko Kojima , Taro Ikeda , Tatsuo Hatano
IPC分类号： H01L21/285 , B05C11/00
CPC分类号： C23C16/18 , H01L21/28556 , H01L21/76877 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A film forming method is provided with a substrate placing step wherein a substrate is placed in a process chamber in an airtight status; a first film forming step wherein the process chamber is supplied with water vapor and a material gas including an organic compound of copper, and an adhered layer of copper is formed on the substrate; an exhaust step wherein the water vapor and the material gas in the process chamber are exhausted; and a second film forming step wherein the process chamber is resupplied with only the material gas and a copper film is further formed on the adhered layer.
摘要翻译：一种成膜方法具有基板放置步骤，其中将基板以气密状态放置在处理室中; 第一成膜步骤，其中处理室被供应水蒸汽和包含铜的有机化合物的原料气体，并且在基板上形成铜的附着层; 排气步骤，其中处理室中的水蒸气和原料气体被排出; 以及第二成膜步骤，其中处理室仅用原料气体再供给，并且在附着层上进一步形成铜膜。

15. 发明申请

US20050221000A1 Method of forming a metal layer 审中-公开
标题翻译：形成金属层的方法
公开(公告)号：US20050221000A1
公开(公告)日：2005-10-06
申请号：US10813680
申请日：2004-03-31
申请人： Taro Ikeda , Tsukasa Matsuda , Fenton McFeely , Sandra Malhotra , Andrew Simon , John Yurkas
发明人： Taro Ikeda , Tsukasa Matsuda , Fenton McFeely , Sandra Malhotra , Andrew Simon , John Yurkas
IPC分类号： C23C16/02 , C23C16/16 , C23C16/509 , B05D3/00 , C23C16/00 , H05H1/24
CPC分类号： C23C16/5096 , C23C16/02 , C23C16/16
摘要： A method and a processing tool are provided for forming a metal layer with improved morphology on a substrate. The method includes pre-treating the substrate by exposing the substrate to excited species in a plasma, exposing the pre-treated substrate to a process gas containing a metal-carbonyl precursor, and forming a metal layer on the pre-treated substrate surface by a chemical vapor deposition process. The metal-carbonyl precursor can contain W(CO)6, Ni(CO)4, Mo(CO)6, CO2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, or Ru3(CO)12 or any combination thereof, and the metal layer can contain W, Ni, Mo, Co, Rh, Re, Cr, or Ru, or any combination thereof, respectively.
摘要翻译：提供了一种用于在衬底上形成具有改善的形态的金属层的方法和加工工具。该方法包括通过将衬底暴露于等离子体中的激发物质来预处理衬底，将预处理的衬底暴露于含有羰基金属前体的工艺气体中，以及在预处理的衬底表面上形成金属层化学气相沉积工艺。金属羰基前体可以含有W（CO）6，Ni（CO）4，Mo（CO）6，CO， 2（CO）8，Rh 4（CO）12，Re 2（CO） Cr（CO）6或Ru 3（CO）12 12或其任何组合，和金属层可以分别含有W，Ni，Mo，Co，Rh，Re，Cr或Ru，或其任何组合。

16. 发明授权

US08945342B2 Surface wave plasma generating antenna and surface wave plasma processing apparatus 有权
标题翻译：表面波等离子体产生天线和表面波等离子体处理装置
公开(公告)号：US08945342B2
公开(公告)日：2015-02-03
申请号：US13410957
申请日：2012-03-02
申请人： Taro Ikeda , Shigeru Kasai , Yuki Osada
发明人： Taro Ikeda , Shigeru Kasai , Yuki Osada
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32 , C23C16/27
CPC分类号： H01J37/3222 , C23C16/274
摘要： A surface wave plasma generating antenna serves to generate a surface wave plasma in a chamber by radiating into the chamber a microwave transmitted from a microwave output section through a coaxial waveguide including an outer conductor and an inner conductor. The surface wave plasma generating antenna is formed in a planar shape and has a plurality of slots arranged in a circumferential direction, and each joint portion between two adjacent slots in the circumferential direction is overlapped with at least one of the slots in a diametrical direction.
摘要翻译：表面波等离子体产生天线用于通过将包括外部导体和内部导体的同轴波导从微波输出部分发射的微波辐射到室中，从而在室内产生表面波等离子体。表面波等离子体发生天线形成为平面形状，并且具有沿圆周方向排列的多个狭槽，并且沿圆周方向的两个相邻狭槽之间的每个接合部分沿直径方向与至少一个狭槽重叠。

17. 发明授权

US08424866B2 Sheet feeding apparatus and image forming apparatus 有权
标题翻译：送纸装置和成像装置
公开(公告)号：US08424866B2
公开(公告)日：2013-04-23
申请号：US13181378
申请日：2011-07-12
申请人： Taro Ikeda
发明人： Taro Ikeda
IPC分类号： B65H3/14
CPC分类号： B65H3/128 , B65H3/48 , B65H3/68 , B65H2404/512 , B65H2801/06
摘要： A sheet feeding apparatus may include a sheet storage unit, an air blowing unit, a suction conveyance unit, and a conveyance guide. A sheet in the sheet storage unit blown by the air blowing unit may be conveyed to the conveyance guide by the suction conveyance unit. The conveyance guide has a guide surface and inclined portions arranged upstream in the sheet conveyance direction, formed therein from a sheet conveyance center to ends in a sheet width direction perpendicular to the sheet conveyance direction. The inclined portions are inclined from the upstream side towards the downstream in the sheet conveyance direction. As a distance in which an inclined portion resides away from the suction conveyance unit increases, the inclined portion becomes positioned more upstream in the sheet conveyance direction.
摘要翻译：片材进给装置可以包括片材存储单元，送风单元，抽吸传送单元和输送引导件。由吹送单元吹送的片材存储单元中的片材可以通过抽吸输送单元输送到输送引导件。输送引导件具有引导表面和布置在纸张输送方向上游的倾斜部分，其从片材输送中心形成在纸张输送方向上的纸张宽度方向上。倾斜部分在片材传送方向上从上游侧向下游倾斜。随着倾斜部分远离吸引传送单元的距离增加，倾斜部分在片材输送方向上位于更上游。

18. 发明授权

US08328181B2 Sheet feeding apparatus and image forming system 有权
标题翻译：送纸装置和成像系统
公开(公告)号：US08328181B2
公开(公告)日：2012-12-11
申请号：US12695955
申请日：2010-01-28
申请人： Isao Kannari , Taro Ikeda , Takashi Uno , Yuji Yamanaka , Yuuya Yokobori
发明人： Isao Kannari , Taro Ikeda , Takashi Uno , Yuji Yamanaka , Yuuya Yokobori
IPC分类号： B65H3/12
CPC分类号： B65H7/02 , B65H1/14 , B65H3/08 , B65H3/128 , B65H3/48 , B65H7/20 , B65H2701/111
摘要： A sheet feeding apparatus includes a sheet stacking unit, a suction conveyance unit configured to convey an uppermost sheet stacked on the sheet stacking unit, a suction unit configured to adsorb the sheets onto the suction conveyance unit, and an adsorption completion detection unit. In the sheet feeding apparatus, when the tab-attached sheets are stacked on the sheet stacking unit and fed such that their tab portions are on the downstream side in a sheet feeding direction, the suction unit starts to adsorb the sheet in response to a sheet feeding signal, and the suction conveyance unit starts to convey the sheet immediately after the adsorption completion detection unit detects the completion of the adsorption. When the sheets other than the tab-attached sheets are fed, the suction unit previously adsorbs the sheet onto the suction conveyance unit, and the suction conveyance unit starts to convey the sheet in response to the sheet feeding signal.
摘要翻译：片材进给装置包括片材堆积单元，用于输送堆叠在片材堆积单元上的最上面的片材的抽吸输送单元，被配置为将片材吸附到吸入输送单元上的吸引单元和吸附完成检测单元。在片材供给装置中，当片状片材堆叠在片材堆积单元上并进给使得其片状部分在片材进给方向的下游侧时，吸引单元响应于片材开始吸附片材在吸附完成检测单元检测到吸附完成之后立即开始输送片材。当进给了片状片材以外的片材时，吸引单元预先将片材吸附到吸引传送单元上，并且吸引传送单元响应于片材进给信号开始传送片材。

19. 发明申请

US20110150719A1 MICROWAVE INTRODUCTION MECHANISM, MICROWAVE PLASMA SOURCE AND MICROWAVE PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：微波介绍机理，微波等离子体源和微波等离子体处理设备
公开(公告)号：US20110150719A1
公开(公告)日：2011-06-23
申请号：US13059680
申请日：2009-08-21
申请人： Taro Ikeda
发明人： Taro Ikeda
IPC分类号： B01J19/08 , H01Q13/18
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/3222 , H01J37/32229 , H01J37/32256
摘要： A microwave introduction mechanism (43) includes: an antenna section (45) including a plane antenna (54) for radiating microwaves into a chamber (1); a coaxial tube (50) connected to the plane antenna (54) to guide microwaves to the plane antenna (54); and a tuner section (44) provided in the coaxial tube (50) for impedance adjustment. The plane antenna (54) has a plurality of arc-shaped slots (54a) for radiating microwaves, formed such that, assuming that a plurality of imaginary concentric circles, arranged at a spacing equal to an integral multiple of “λg/4+δ” (wherein λg represents the effective wavelength of microwaves, and δ is a value that falls within the range 0≦δ≦0.05λg), are drawn on a plane of the plane antenna, “n” (n is an integer not less than 2) arc-shaped slots having the same length are evenly arranged on each imaginary circle, and the plurality of arc-shaped slots form “n” groups where the slots belonging to each group arranged in a radial direction and have the same central angle and the same angular position.
摘要翻译：微波引入机构（43）包括：天线部分（45），包括用于将微波辐射到室（1）中的平面天线（54）; 连接到平面天线（54）以将微波引导到平面天线（54）的同轴管（50）; 以及设置在同轴管（50）中用于阻抗调节的调谐器部分（44）。平面天线（54）具有用于辐射微波的多个弧形槽（54a），其形成为使得以等于“λg/ 4 +δ”的整数倍的间隔排列的多个虚拟同心圆 “（其中λg表示微波的有效波长，δ是属于平面天线的平面上的δ”n“的值），n”（n是不小于 2）具有相同长度的弧形槽均匀地布置在每个假想圆上，并且多个弧形槽形成“n”组，其中属于每个组的槽在径向方向上布置并具有相同的中心角，并且相同的角度位置。

20. 发明申请

US20110006474A1 SHEET FEEDING APPARATUS AND IMAGE FORMING APPARATUS 有权
标题翻译：纸张进给装置和图像形成装置
公开(公告)号：US20110006474A1
公开(公告)日：2011-01-13
申请号：US12830717
申请日：2010-07-06
申请人： Taro Ikeda
发明人： Taro Ikeda
IPC分类号： B65H5/06 , B65H1/18
CPC分类号： B65H3/0607 , B65H3/56 , B65H2405/1132 , B65H2801/06
摘要： A sheet feeding apparatus in that a leading edge regulation member, which is provided on an end on a downstream in a sheet feeding direction of a manual feed tray tilted in such a manner that a portion of the manual feed tray on the downstream in the sheet feeding direction is lowered, regulates a position of an edge on the downstream in the sheet feeding direction of a sheet bundle supported by the manual feed tray. Further, an upper end portion of the leading edge regulation member is provided with a stepped portion, to thereby cause sheets in a surface layer portion of the sheet bundle, which are supported by the manual feed tray, to deviate downstream in the sheet feeding direction when the sheet bundle is placed in the manual feed tray.
摘要翻译：一种送纸装置，其特征在于，一个前边缘调节件，其设置在手动进给托盘的送纸方向的下游的一端上，该手动进给托盘的下游侧的手动进给托盘的一部分进给方向下降，调节由手动进给托盘支撑的薄片束的片材进给方向上的下游边缘的位置。此外，前缘调节构件的上端部设置有阶梯部，由此使由手动进给托盘支撑的片材束的表层部的片材在片材供给方向上向下游偏离当纸张束放置在手动进纸盘中时。

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