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    • 15. 发明授权
    • Substrate processing apparatus
    • 基板加工装置
    • US07998306B2
    • 2011-08-16
    • US12292947
    • 2008-12-01
    • Koukichi HiroshiroHideyuki YamamotoKazuhiro TakeshitaTakayuki Toshima
    • Koukichi HiroshiroHideyuki YamamotoKazuhiro TakeshitaTakayuki Toshima
    • H01L21/304
    • H01L21/67057
    • The present invention provides a substrate processing apparatus for processing substrates by immersing the substrates in a processing liquid. This substrate processing apparatus includes a processing tank having a pair of side walls arranged to be opposed to each other; and a pair of processing-liquid supply mechanisms provided respectively corresponding to the pair of side walls. The pair of processing-liquid supply mechanisms are respectively configured for supplying the processing liquid toward a central portion of the processing tank in the width direction connecting the pair of side walls, thereby to create a rising flow of the processing liquid in a central area in the width direction of the processing tank. Each inner wall face of the pair of side walls includes a main body, a projecting portion located above the main body, and a discharge guide portion located uppermost and providing a discharge port configured for allowing the processing liquid to overflow. The discharge guide portion is inclined upward, opposite to the central portion in the width direction. The projecting portion includes an inner end portion located nearer to the central portion in the width direction, as compared with the main body and discharge guide portion.
    • 本发明提供一种基板处理装置,用于通过将基板浸入处理液中来处理基板。 该基板处理装置具备:处理槽,具有配置成彼此相对的一对侧壁; 以及分别对应于一对侧壁设置的一对处理液供给机构。 一对处理液供给机构分别构成为将处理液朝向连接该一对侧壁的宽度方向的处理槽的中央部供给,从而在处理液的中央区域产生上升的流动 处理槽的宽度方向。 一对侧壁的每个内壁面包括主体,位于主体上方的突出部分和位于最上方的排出引导部分,并且设置用于允许处理液体溢出的排出口。 排出引导部分在宽度方向上与中心部分相反地向上倾斜。 与主体和排出引导部相比,突出部包括位于宽度方向上更接近中央部的内端部。
    • 17. 发明授权
    • Gas treatment apparatus
    • 气体处理装置
    • US06660096B2
    • 2003-12-09
    • US09735627
    • 2000-12-14
    • Kazuhiro TakeshitaShinji NagashimaYoji MizutaniKyoshige Katayama
    • Kazuhiro TakeshitaShinji NagashimaYoji MizutaniKyoshige Katayama
    • C23C1600
    • H01L21/67017B05D1/005B05D3/0453
    • A gas flow regulating surface portion 37a is the farthest from the front surface of a wafer W in the middle between a peripheral portion of the wafer W and a center portion of a sealing vessel. The gas flow regulating portion 37a protrudes to the front surface of the wafer W in the vicinity of a center portion that surrounds an exhausting opening 35a. In other words, a convex portion 37c is formed in a peripheral area of the gas flow regulating surface portion 37a that surrounds the exhausting opening 35a. Since treatment gas flows along the front surface of the gas flow regulating portion 37a, treatment gas equally contacts the wafer W in the radius direction of the wafer W. Thus, a film with equal thickness is formed.
    • 气体流量调节表面部分37a在晶片W的周边部分和密封容器的中心部分之间的中间距离晶片W的前表面最远。 气体流量调节部分37a在围绕排气口35a的中心部分附近向晶片W的前表面突出。 换句话说,在围绕排气口35a的气体流量调节表面部分37a的周边区域中形成有凸部37c。 由于处理气体沿着气体流量调节部分37a的前表面流动,所以处理气体在晶片W的半径方向上均匀地接触晶片W.因此,形成了具有相同厚度的膜。
    • 18. 发明授权
    • Film forming apparatus, substrate conveying apparatus, film forming method, and substrate conveying method
    • 成膜装置,基板输送装置,成膜方法和基板输送方法
    • US06197385B1
    • 2001-03-06
    • US09243120
    • 1999-02-03
    • Kazuhiro TakeshitaShinji NagashimaYoji Mizutani
    • Kazuhiro TakeshitaShinji NagashimaYoji Mizutani
    • B05D312
    • B05C11/08
    • A coating unit, an aging unit, and a solvent substituting unit are adjacently disposed. The waiting time period after a wafer is loaded to the coating unit until the coating process of the coating process is started, is adjusted so that the staying time period of the wafer in the coating unit becomes longer than the staying time period of the wafer in the aging unit and the staying time period of the wafer in the solvent substituting unit (whichever longer). The staying time period of the wafer in the coating unit is designated as a rate determiner. Thus, after the coating solution is coated to the wafer, the wafer is quickly conveyed to the next process. Consequently, since the solvent can be suppressed from evaporating, an excellent thin film can be obtained.
    • 涂布单元,老化单元和溶剂置换单元相邻布置。 将晶片装载到涂布单元直到涂布处理的涂布处理开始之后的等待时间被调节,使得涂布单元中的晶片的停留时间长于晶片的停留时间 晶片在溶剂置换单元中的老化单元和停留时间(以较长者为准)。 将涂布单元中的晶片的停留时间段指定为速率确定器。 因此,在将涂布溶液涂布到晶片之后,晶片被快速地传送到下一个工艺。 因此,由于可以抑制溶剂蒸发,所以可以获得优异的薄膜。