专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20080067437A1 CHARGED BEAM PROCESSING APPARATUS 失效
标题翻译：充电梁加工设备
公开(公告)号：US20080067437A1
公开(公告)日：2008-03-20
申请号：US11678244
申请日：2007-02-23
申请人： Masahiko OKUNUKI , Haruhito Ono , Shinan Wang , Kenji Tamamori
发明人： Masahiko OKUNUKI , Haruhito Ono , Shinan Wang , Kenji Tamamori
IPC分类号： H01J37/08
CPC分类号： H01J37/3056 , B82Y10/00 , B82Y40/00 , C23C16/047 , H01J37/3174 , H01J2237/0435 , H01J2237/31732 , H01J2237/31744
摘要： A charged beam processing apparatus including a multi charged beam optical system which converges a plurality of charged beams by a lens and deflects the plurality of charged beams by a deflector to irradiate an object to be processed in a processing chamber, and a supply unit which supplies a gas into the processing chamber, includes a gas controller which controls the gas to be supplied into the processing chamber based on a processing condition, and a beam controller which controls the plurality of charged beams based on the processing condition, wherein at least one of material deposition on the surface of the object and etching of the surface of the object forms a structure.
摘要翻译：一种带电波束处理装置，包括多透光束光学系统，其通过透镜会聚多个带电波束，并且通过偏转器偏转所述多个带电波束以在处理室中照射待处理物体;以及供应单元，进入处理室的气体包括：气体控制器，其基于处理条件控制供给到处理室中的气体;以及光束控制器，其基于处理条件控制多个带电束，其中，至少一个在物体的表面上的材料沉积和对象的表面的蚀刻形成结构。

12. 发明授权

US07109494B2 Deflector, method of manufacturing deflector, and charged particle beam exposure apparatus using deflector 有权
标题翻译：偏转器，偏转器制造方法和使用偏转器的带电粒子束曝光装置
公开(公告)号：US07109494B2
公开(公告)日：2006-09-19
申请号：US10787082
申请日：2004-02-27
申请人： Haruhito Ono , Masatake Akaike , Kenji Tamamori , Futoshi Hirose , Yasushi Koyama , Atsunori Terasaki , Ken-ichi Nagae , Yoshinori Nakayama
发明人： Haruhito Ono , Masatake Akaike , Kenji Tamamori , Futoshi Hirose , Yasushi Koyama , Atsunori Terasaki , Ken-ichi Nagae , Yoshinori Nakayama
IPC分类号： H01J37/47 , H01J37/30
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/045 , H01J37/3177 , H01J2237/0435 , H01J2237/0437
摘要： A deflector which makes multilayered wiring possible and prevents contamination during the manufacture includes an electrode substrate (400) having a plurality of through holes, and an electrode pair made up of first and second electrodes which oppose the side walls of each through hole in order to control the locus of a charged particle beam passing through the through hole, and a wiring substrate (500) having connection wiring pads connected to the electrode pairs of the electrode substrate to individually apply voltages to the electrode pairs. This deflector is formed by bonding the electrode substrate and wiring substrate via the connection wiring pads of the wiring substrate.
摘要翻译：可以制造多层布线并防止在制造过程中的污染的偏转器包括具有多个通孔的电极基板（400）和由与每个通孔的侧壁相对的第一和第二电极构成的电极对，以便控制通过通孔的带电粒子束的轨迹;以及布线基板（500），其具有连接到电极基板的电极对的连接布线焊盘，以分别向电极对施加电压。该偏转器是通过经布线基板的连接布线焊盘接合电极基板和布线基板而形成的。

13. 发明申请

US20050263713A1 Deflector, method of manufacturing deflector, and charged particle beam exposure apparatus 有权
标题翻译：偏转器，偏转器制造方法和带电粒子束曝光装置
公开(公告)号：US20050263713A1
公开(公告)日：2005-12-01
申请号：US11196262
申请日：2005-08-04
申请人： Yuichi Iwasaki , Masato Muraki , Kenji Tamamori , Kouji Asano , Masayoshi Esashi , Yoshinori Nakayama , Shinichi Hashimoto , Yoshiaki Moro
发明人： Yuichi Iwasaki , Masato Muraki , Kenji Tamamori , Kouji Asano , Masayoshi Esashi , Yoshinori Nakayama , Shinichi Hashimoto , Yoshiaki Moro
IPC分类号： H01J37/147 , H01J3/14
CPC分类号： H01J37/045 , B82Y10/00 , B82Y40/00 , H01J37/1477 , H01J37/3174 , H01J2237/0437 , H01J2237/31774
摘要： A deflector which deflects a charged particle beam includes a substrate having an opening through which the charged particle beam should pass, and a deflection electrode which is arranged in the opening to deflect the charged particle beam and has a first conductive member and second conductive member which are formed by plating. The second conductive member is formed on a surface of the first conductive member and is essentially made of a material that is more difficult to oxidize than the first conductive member.
摘要翻译：偏转带电粒子束的偏转器包括具有带电粒子束应穿过的开口的基板和设置在开口中以偏转带电粒子束的偏转电极，并具有第一导电部件和第二导电部件，通过电镀形成。第二导电构件形成在第一导电构件的表面上，并且基本上由比第一导电构件更难氧化的材料制成。

14. 发明申请

US20100260228A1 METHOD OF PRODUCING THREE-DIMENSIONAL PHOTONIC CRYSTAL AND OPTICAL FUNCTIONAL DEVICE 失效
标题翻译：生产三维光子晶体和光学功能器件的方法
公开(公告)号：US20100260228A1
公开(公告)日：2010-10-14
申请号：US12754833
申请日：2010-04-06
申请人： Aihiko Numata , Hikaru Hoshi , Kenji Tamamori
发明人： Aihiko Numata , Hikaru Hoshi , Kenji Tamamori
IPC分类号： H01S3/08 , G02B6/10 , H01S3/00 , B32B38/10
CPC分类号： G02B6/1225 , B82Y20/00 , G02B6/13 , H01S5/105
摘要： A method of producing a three-dimensional photonic crystal by laminating a layer having a periodic structure, the method including the steps of forming a first structure and a second structure each including the layer having the periodic structure; and bonding a first bonding layer of the first structure and a second bonding layer of the second structure. The first bonding layer is one layer obtained by dividing a layer constituting the three-dimensional photonic crystal at a cross section perpendicular to a lamination direction, and the second bonding layer is the other layer obtained by dividing the layer constituting the three-dimensional photonic crystal at the cross section perpendicular to the lamination direction.
摘要翻译：一种通过层叠具有周期性结构的层来制造三维光子晶体的方法，所述方法包括以下步骤：形成具有周期性结构的层的第一结构和第二结构; 以及将所述第一结构的第一接合层和所述第二结构的第二接合层接合。第一接合层是通过在垂直于层叠方向的截面上划分构成三维光子晶体的层而获得的一层，并且第二接合层是通过将构成三维光子晶体的层分割而获得的另一层在垂直于层叠方向的横截面处。

15. 发明授权

US07727410B2 Process for formation of three-dimensional photonic crystal 失效
标题翻译：三维光子晶体的形成过程
公开(公告)号：US07727410B2
公开(公告)日：2010-06-01
申请号：US11703109
申请日：2007-02-07
申请人： Shinan Wang , Kenji Tamamori , Haruhito Ono , Masahiko Okunuki
发明人： Shinan Wang , Kenji Tamamori , Haruhito Ono , Masahiko Okunuki
IPC分类号： G02B6/10
CPC分类号： G02B6/1225 , B82Y20/00 , G02B6/136
摘要： A process for forming a three-dimensional photonic crystal comprises the steps of providing a base material having a first face and a second face adjoining to each other at a first angle, forming a first mask on the first face, dry-etching the first face in a direction at a second angle to the first face to remove a portion of the base material not protected by the first mask, forming a second mask on the second face, and dry-etching the second face in a direction at a third angle to the second face to remove a portion of the base material not protected by the second mask.
摘要翻译：一种用于形成三维光子晶体的方法包括以下步骤：提供具有第一面和第二面的基材，所述第一面和第二面以第一角度彼此邻接，在第一面上形成第一掩模，对第一面进行干蚀刻在与第一面成第二角度的方向上移除未被第一掩模保护的基材的一部分，在第二面上形成第二掩模，并将第二面沿第三角度的方向干蚀刻成相对于所述第二面以除去未被所述第二掩模保护的所述基材的一部分。

16. 发明申请

US20090315153A1 NANO STRUCTURE AND MANUFACTURING METHOD OF NANO STRUCTURE 有权
标题翻译：纳米结构的纳米结构与制造方法
公开(公告)号：US20090315153A1
公开(公告)日：2009-12-24
申请号：US12109701
申请日：2008-04-25
申请人： Taiko Motoi , Kenji Tamamori , Shinan Wang , Masahiko Okunuki , Haruhito Ono , Toshiaki Aiba , Nobuki Yoshimatsu
发明人： Taiko Motoi , Kenji Tamamori , Shinan Wang , Masahiko Okunuki , Haruhito Ono , Toshiaki Aiba , Nobuki Yoshimatsu
IPC分类号： H01L29/06 , H01L21/302
CPC分类号： B82Y10/00 , H01L21/3083 , H01L21/31144
摘要： To provide a method of manufacturing a nano structure having a pattern of 2 μm or more in depth formed on the surface of a substrate containing Si and a nano structure having a pattern of a high aspect and nano order. A nano structure having a pattern of 2 μm or more in depth formed on the surface of a substrate containing Si, wherein the nano structure is configured to contain Ga or In on the surface of the pattern, and has the maximum value of the concentration of the Ga or the In positioned within 50 nm of the surface of the pattern in the depth direction of the substrate. Further, its manufacturing method is configured such that the surface of the substrate containing Si is irradiated with a focused Ga ion or In ion beam, and the Ga ions or the In ions are injected, while sputtering away the surface of the substrate, and a layer containing Ga or In is formed on the surface of the substrate, and with this layer taken as an etching mask, a dry etching is performed.
摘要翻译：本发明提供一种制造具有深度形成在2μm以上的图案的纳米结构体的方法，该方法形成在含有Si的衬底和具有高方面和纳米级的图案的纳米结构的表面上。在包含Si的基板的表面上形成深度为2μm或更大的图案的纳米结构，其中纳米结构被配置为在图案的表面上含有Ga或In，并且具有 Ga或In位于衬底的深度方向上图案表面的50nm以内。此外，其制造方法被配置为使得包含Si的衬底的表面被照射聚焦的Ga离子或In离子束，并且注入Ga离子或In离子，同时溅射离开衬底的表面，并且在基板的表面上形成含有Ga或In的层，将该层作为蚀刻掩模进行干法蚀刻。

17. 发明授权

US07611810B2 Charged beam processing apparatus 失效
标题翻译：充电光束处理装置
公开(公告)号：US07611810B2
公开(公告)日：2009-11-03
申请号：US11678244
申请日：2007-02-23
申请人： Masahiko Okunuki , Haruhito Ono , Shinan Wang , Kenji Tamamori
发明人： Masahiko Okunuki , Haruhito Ono , Shinan Wang , Kenji Tamamori
IPC分类号： G03F9/00
CPC分类号： H01J37/3056 , B82Y10/00 , B82Y40/00 , C23C16/047 , H01J37/3174 , H01J2237/0435 , H01J2237/31732 , H01J2237/31744
摘要： A charged beam processing apparatus for processing an object to form structures on the object includes a processing chamber, a multi-charged beam optical system configured to generate a plurality of charged beams, and to converge and to deflect the plurality of charged beams to irradiate the object in the processing chamber with the plurality of charged beams, and a supply port configured to supply a gas into the processing chamber. The multi-charged beam optical system includes (i) a lens array, and (ii) a pattern forming plate configured to select a portion of the lens array to be used to form the structures. The charged beam processing apparatus includes a controller configured to control an exchange of the pattern forming plate in accordance with an arrangement pattern of the structures to be formed on the object.
摘要翻译：一种用于处理物体以在物体上形成结构的带电束处理装置包括处理室，多充电束光学系统，其被配置为产生多个带电束，并且会聚和偏转多个带电束以照射在处理室中具有多个带电束的物体，以及被配置为将气体供应到处理室中的供给口。多电荷束光学系统包括（i）透镜阵列，以及（ii）配置为选择要用于形成结构的透镜阵列的一部分的图案形成板。带电波束处理装置包括：控制器，被配置为根据要形成在物体上的结构的布置图案来控制图案形成板的更换。

18. 发明申请

US20080298744A1 PHOTONIC CRYSTAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：光子晶体结构及其制造方法
公开(公告)号：US20080298744A1
公开(公告)日：2008-12-04
申请号：US12127154
申请日：2008-05-27
申请人： Shinan Wang , Kenji Tamamori , Taiko Motoi , Masahiko Okunuki , Haruhito Ono , Toshiaki Aiba
发明人： Shinan Wang , Kenji Tamamori , Taiko Motoi , Masahiko Okunuki , Haruhito Ono , Toshiaki Aiba
IPC分类号： G02B6/26
CPC分类号： G02B5/1847 , B82Y20/00 , G02B1/005 , G02B6/1225
摘要： A photonic crystal structure is provided the optical characteristics of which vary periodically in at least one direction, wherein the base material of the photonic crystal structure is formed of a dielectric material, a region containing at least one of molecules, atoms and ions different from the constituent element of the base material is provided in the base material, and the region is arranged in the base material so that the density of one of the molecules, atoms and ions varies periodically in the one direction.
摘要翻译：提供光子晶体结构，其光学特性在至少一个方向上周期性地变化，其中光子晶体结构的基底材料由介电材料形成，包含至少一个分子，不同于基材的构成元件设置在基材中，并且该区域被布置在基材中，使得一个分子，原子和离子的密度在一个方向上周期性地变化。

19. 发明申请

US20080283487A1 PROCESS FOR PRODUCING THREE-DIMENSIONAL PHOTONIC CRYSTAL AND THE THREE-DIMENSIONAL PHOTONIC CRYSTAL 审中-公开
标题翻译：生产三维光子晶体和三维光子晶体的方法
公开(公告)号：US20080283487A1
公开(公告)日：2008-11-20
申请号：US12108991
申请日：2008-04-24
申请人： Shinan Wang , Kenji Tamamori , Taiko Motoi , Masahiko Okunuki , Haruhito Ono , Toshiaki Aiba
发明人： Shinan Wang , Kenji Tamamori , Taiko Motoi , Masahiko Okunuki , Haruhito Ono , Toshiaki Aiba
IPC分类号： B32B3/30 , C23F1/00
CPC分类号： G02B6/1225 , B82Y20/00 , G02B1/005 , Y10T428/2457
摘要： A process for producing a three-dimensional photonic crystal comprises the steps of providing a base material having first and second faces adjoining together at a first angle; forming a first mask on the first face; forming fine holes in the base material by dry-etching on the first face in a direction at a second angle to the first face; forming a second mask on the second face; and forming fine holes in the base material by dry-etching on the second face in a direction at a third angle to the second face; the first mask and the second mask, being formed by implantation of ions by a focused ion beam onto the surface layer of the mask formation face of the base material.
摘要翻译：制造三维光子晶体的方法包括以下步骤：提供具有以第一角度邻接在一起的第一和第二面的基材; 在第一面上形成第一面罩; 通过在第一面上以与第一面成第二角度的方向干蚀刻在基材中形成细孔; 在所述第二面上形成第二掩模; 并且在第二面上通过干法蚀刻在与第二面成三角的方向上在基材中形成细孔; 第一掩模和第二掩模，通过聚焦离子束将离子注入到基材的掩模形成面的表面层上而形成。

20. 发明申请

US20070196066A1 Process for formation of three-dimensional photonic crystal 失效
标题翻译：三维光子晶体的形成过程
公开(公告)号：US20070196066A1
公开(公告)日：2007-08-23
申请号：US11703109
申请日：2007-02-07
申请人： Shinan Wang , Kenji Tamamori , Haruhito Ono , Masahiko Okunuki
发明人： Shinan Wang , Kenji Tamamori , Haruhito Ono , Masahiko Okunuki
IPC分类号： G02B6/10
CPC分类号： G02B6/1225 , B82Y20/00 , G02B6/136
摘要： A process for forming a three-dimensional photonic crystal comprises the steps of providing a base material having a first face and a second face adjoining to each other at a first angle, forming a first mask on the first face, dry-etching the first face in a direction at a second angle to the first face to remove a portion of the base material not protected by the first mask, forming a second mask on the second face, and dry-etching the second face in a direction at a third angle to the second face to remove a portion of the base material not protected by the second mask.
摘要翻译：一种用于形成三维光子晶体的方法包括以下步骤：提供具有第一面和第二面的基材，所述第一面和第二面以第一角度彼此邻接，在第一面上形成第一掩模，对第一面进行干蚀刻在与第一面成第二角度的方向上移除未被第一掩模保护的基材的一部分，在第二面上形成第二掩模，并将第二面沿第三角度的方向干蚀刻成相对于所述第二面以除去未被所述第二掩模保护的所述基材的一部分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式