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11. 发明授权

US06368661B2 Method for repair coating 失效
标题翻译：维修方法
公开(公告)号：US06368661B2
公开(公告)日：2002-04-09
申请号：US09783601
申请日：2001-02-15
申请人： Tadashi Nakano
发明人： Tadashi Nakano
IPC分类号： B05D310
CPC分类号： C09D163/00
摘要： The present invention provides a method for repair coating characterized by applying an epoxy-polyamine resin base coating composition comprising an epoxy resin having at least one epoxy resin in a molecule and an amine base curing agent as resinous components on a deteriorated coating film which is selected from a tar epoxy resin coating film, a tar urethane resin coating film, a modified epoxy resin coating film, a modified urethane resin coating film, an epoxy-polyamine resin coating film and an epoxy urethane resin coating film and which has a water content of 0.3 to 5% by weight.
摘要翻译：本发明提供一种维修涂层的方法，其特征在于，在分散有至少一种环氧树脂的环氧树脂和胺基固化剂作为树脂成分的环氧 - 多胺树脂基涂料组合物上涂布劣化涂膜，焦油环氧树脂涂膜，焦油聚氨酯树脂涂膜，改性环氧树脂涂膜，改性聚氨酯树脂涂膜，环氧 - 多胺树脂涂膜和环氧聚氨酯树脂涂膜，其含水量为 0.3〜5重量％。

12. 发明授权

US06338869B1 Coating composition 有权
标题翻译：涂料组成
公开(公告)号：US06338869B1
公开(公告)日：2002-01-15
申请号：US09594789
申请日：2000-06-16
申请人： Tadashi Nakano , Akira Saito , Shigeo Inomata
发明人： Tadashi Nakano , Akira Saito , Shigeo Inomata
IPC分类号： B32B3500
CPC分类号： C09D163/00 , C08G59/50 , Y10T428/31511 , C08L2666/02
摘要： The present invention provides a coating composition capable of forming a coating film having good performances such as an adhesive property even if coated on a deteriorated coating film surface of a high rust-preventive coating film of a tar epoxy resin coating material and the like without providing pre-treatment, and a coating method thereof. The above coating composition is a coating composition of an organic solvent type or solventless type comprising an epoxy resin having at least one epoxy group in a molecule and an amine base curing agent as resin components, wherein moisture of 1 to 30 parts by weight per 100 parts by weight of the solid matter of the coating composition is contained.
摘要翻译：本发明提供一种涂料组合物，即使涂覆在焦油环氧树脂涂料等的高防锈涂膜的劣化涂膜表面上，也能够形成具有良好性能等粘合性能的涂膜，而无需提供预处理及其涂布方法。上述涂料组合物是包含分子中具有至少一个环氧基的环氧树脂和作为树脂组分的胺基固化剂的有机溶剂型或无溶剂型涂料组合物，其中水分为1至30重量份/ 100 含有重量份的涂料组合物的固体物质。

13. 发明授权

US4361654A Porcelain enamel frit for sheet iron ground coat 失效
标题翻译：瓷釉玻璃料用于铁皮磨面
公开(公告)号：US4361654A
公开(公告)日：1982-11-30
申请号：US290182
申请日：1981-08-05
申请人： Akira Ohmura , Tadashi Nakano
发明人： Akira Ohmura , Tadashi Nakano
IPC分类号： C03C3/064 , C03C3/066 , C03C3/089 , C03C3/091 , C03C3/097 , C03C8/02 , C03C8/04 , C03C8/08 , C03C7/02 , C03C3/08
CPC分类号： C03C8/02 , C03C8/04 , C03C8/08 , C03C2207/02
摘要： A porcelain enamel frit for sheet iron ground coat is disclosed, which contains neither fluorine nor fluorine compound, but has excellent firing property, and can be worked into sheet iron enamel having high gloss and adherence and low surface roughness. The frit consists of 100 parts of a main component and 7-42 parts of an auxiliary component, said main component consisting of 30-73 parts of SiO.sub.2 or a mixture of SiO.sub.2 and at least one of TiO.sub.2, ZrO.sub.2 and SnO.sub.2, 8-45 parts of B.sub.2 O.sub.3, and 8-41 parts of Na.sub.2 O or a mixture of Na.sub.2 O and at least one of Li.sub.2 O and K.sub.2 O, and said auxiliary component consisting of not more than 12 parts of Al.sub.2 O.sub.3, 1-22 parts of at least one of CaO, Bao, ZnO, MgO and SrO, from more than 0 part to 7 parts of MoO.sub.3 or a mixture of MoO.sub.3 and at least one of V.sub.2 O.sub.5, P.sub.2 O.sub.5 and Sb.sub.2 O.sub.3, and 0.5-10 parts of at least one of CoO, NiO, CuO, MnO.sub.2 and Fe.sub.2 O.sub.3.
摘要翻译：公开了一种不含氟和氟化合物，但具有优异的焙烧性能的瓷釉料玻璃料，可以加工成具有高光泽度和粘附性以及低表面粗糙度的片状铁搪瓷。玻璃料由100份主成分和7-42份辅助成分组成，所述主成分由30-73份SiO 2或SiO 2与TiO 2，ZrO 2和SnO 2中的至少一种组成，8-45 B 2 O 3的部分，Na 2 O的8〜41份，或Na 2 O与Li 2 O和K 2 O的至少一种的混合物，所述的辅助成分由不超过12份的Al 2 O 3，1-22份CaO， BaO，ZnO，MgO和SrO，MoO 3的0份〜7份，MoO 3与V 2 O 5，P 2 O 5，Sb 2 O 3中的至少一种的混合物，以及0.5〜10份的CoO，NiO，CuO， MnO2和Fe2O3。

14. 发明申请

US20090049254A1 MEMORY CONTROLLER AND PROCESSOR SYSTEM 审中-公开
标题翻译：内存控制器和处理器系统
公开(公告)号：US20090049254A1
公开(公告)日：2009-02-19
申请号：US12184553
申请日：2008-08-01
申请人： Syunsuke Koga , Tetsuji Shimogawa , Tadashi Nakano
发明人： Syunsuke Koga , Tetsuji Shimogawa , Tadashi Nakano
IPC分类号： G06F12/00
CPC分类号： G06F13/161
摘要： A memory controller includes a memory diagnosing part for controlling access from a CPU to a memory, and accessing and diagnosing the memory, an information setting part for setting cycle information according to a loaded condition of the CPU, and a cycle adjusting part for adjusting a cycle for the memory diagnosing part to access the memory based on the cycle information of the information setting part.
摘要翻译：存储器控制器包括用于控制从CPU到存储器的访问的存储器诊断部分，以及访问和诊断存储器，用于根据CPU的加载状态设置周期信息的信息设置部分和用于调整CPU的循环调整部件基于信息设定部的循环信息，存储器诊断部的周期进行存取。

15. 发明授权

US07089314B2 Console input/output control system and console control device 失效
公开(公告)号：US07089314B2
公开(公告)日：2006-08-08
申请号：US09735795
申请日：2000-12-14
申请人： Miyuki Tomikawa , Eiichiro Sakurai , Tadashi Nakano , Jyunko Kunita , Rie Takeuchi
发明人： Miyuki Tomikawa , Eiichiro Sakurai , Tadashi Nakano , Jyunko Kunita , Rie Takeuchi
IPC分类号： G06F15/16
CPC分类号： H04L41/00
摘要： A system to control a plurality of server computers as a group on a single client computer. An input/output (I/O) control system controls the command input/output from a plurality of consoles to a single server. The input/output control system controls the I/O status of the commands from each console to the server, and controls the I/O of commands from the various consoles based on the respective I/O statuses. A console display receives a message from a server and displays server console information in a manner identifiable from other server console information in response to the message received from the server.

16. 发明授权

US06413202B1 Solvent systems for polymeric dielectric materials 失效
标题翻译：高分子电介质材料溶剂体系
公开(公告)号：US06413202B1
公开(公告)日：2002-07-02
申请号：US09340976
申请日：1999-06-28
申请人： Oana M. Leonte , Tadashi Nakano , Kelly M. Beres , Kreisler Lau
发明人： Oana M. Leonte , Tadashi Nakano , Kelly M. Beres , Kreisler Lau
IPC分类号： C08G7902
CPC分类号： H01L21/02118 , C08J3/095 , H01L21/02126 , H01L21/02216 , H01L21/02222 , H01L21/02282 , H01L21/312 , Y10T428/31504
摘要： Aromatic aliphatic ether solvents, such as anisole, methylanisole, and phenetole, have been found useful in formulating coating solutions of polymeric dielectric materials and as a clean up solvent in the coating process. A process for forming a dielectric film on a substrate includes depositing a coating solution of a dielectric material in a formulation solvent onto a surface of the substrate and depositing an aromatic aliphatic ether solvent onto an edge portion of the surface of the substrate. The process is used to form films of dielectric materials including arylene ether dielectric polymers, hydridosiloxane resins, organohydridosiloxane resins, spin-on-glass materials, partially hydrolyzed and partially condensed alkoxysilane compositions which are cured to form a nanoporous dielectric silica material, and poly(perhydrido)silazanes.
摘要翻译：已经发现芳族脂族醚溶剂如苯甲醚，甲基苯甲醚和苯乙醚可用于配制聚合物电介质材料的涂料溶液和作为涂布过程中的清洁溶剂。在衬底上形成电介质膜的方法包括将介电材料的涂布溶液在配方溶剂中沉积到衬底的表面上，并将芳族脂族醚溶剂沉积在衬底表面的边缘部分上。该方法用于形成包括亚芳基醚介电聚合物，氢化硅氧烷树脂，有机氢硅氧烷树脂，旋涂玻璃材料，固化以形成纳米多孔介电二氧化硅材料的部分水解和部分缩合的烷氧基硅烷组合物的介电材料的膜，以及聚（ perhydrido）硅氮烷。

17. 发明授权

US06063703A Method for making metal interconnection 失效
标题翻译：金属互连方法
公开(公告)号：US06063703A
公开(公告)日：2000-05-16
申请号：US81047
申请日：1998-05-19
申请人： Hiroshi Shinriki , Takeshi Kaizuka , Nobuyuki Takeyasu , Tomohiro Ohta , Eiichi Kondoh , Hiroshi Yamamoto , Tomoharu Katagiri , Tadashi Nakano , Yumiko Kawano
发明人： Hiroshi Shinriki , Takeshi Kaizuka , Nobuyuki Takeyasu , Tomohiro Ohta , Eiichi Kondoh , Hiroshi Yamamoto , Tomoharu Katagiri , Tadashi Nakano , Yumiko Kawano
IPC分类号： H01L21/285 , H01L21/3213 , H01L21/768 , H01L21/44
CPC分类号： H01L21/76838 , H01L21/28556 , H01L21/32136 , H01L21/76843 , H01L21/76856 , H01L21/76865 , H01L21/76877 , H01L23/53223 , H01L2924/0002
摘要： A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connecting holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.
摘要翻译：通过在半导体衬底之上形成诸如Ti和/或高熔点金属化合物如TiN层的高熔点金属的下面的金属膜，在等离子体中蚀刻下面的金属膜的表面，在含有并在下面的金属膜上形成诸如Al，Cu，Au和Ag的互连金属膜。或者，通过在半导体衬底上形成绝缘膜，在绝缘膜上形成连接孔，在绝缘膜上形成诸如TiN的下面的金属膜和连接孔的底壁和侧壁，通过CVD 在控制条件下进行处理，并在底层金属膜上形成互连金属膜如Al。 TiN膜具有（111）优先取向，铝膜具有（111）优先取向，表面光滑，有效覆盖。如此制造的金属互连具有改进的可靠性，包括当用于半导体器件中的电迁移抗扰性并且在小型化的半导体器件中发现有利的用途。

18. 发明授权

US5998522A Coating solution and method for preparing the coating solution, method for forming insulating films for semiconductor devices, and method for evaluating the coating solution 失效
标题翻译：涂布液及其制备方法，半导体装置用绝缘膜的形成方法以及涂布液的评价方法
公开(公告)号：US5998522A
公开(公告)日：1999-12-07
申请号：US42668
申请日：1998-03-17
申请人： Tadashi Nakano , Makoto Shimura , Tomohiro Ohta
发明人： Tadashi Nakano , Makoto Shimura , Tomohiro Ohta
IPC分类号： C08G77/04 , C09D5/25 , C09D183/04 , C23C18/12 , G01N24/08 , H01L21/312 , H01L21/314 , H01L21/316 , H01L21/768 , H01L23/522 , H01L23/532 , C08K5/10
CPC分类号： H01L23/5329 , C23C18/1212 , C23C18/122 , G01N24/08 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/316 , H01L21/76801 , H01L21/76819 , H01L2924/0002
摘要： A coating solution for forming an insulating film used in production of semiconductor devices includes siloxanes represented by a general formula:[SiR.sub.3 O.sub.1/2 ].sub.k [SiR.sub.2 O.sub.2/2 ].sub.l [SiRO.sub.3/2 ].sub.m [SiO.sub.4/2 ].sub.nwhere each of k, l, m and n is an integer, R may be the same or different and represents at least one organic group, and a ratio of (3k+21+m) to (k+l+m+n) is between about 0.8 and about 1.3. The present invention further relates to a method for preparing the coating solution, and a method for forming the insulating film using the coating solution, including the steps of coating the coating solution on a surface of a substrate of the semiconductor device to form a coated film, fluidizing the coated film at a temperature between about 150.degree. C. to about 300.degree. C. to planarize the surface of the substrate, and curing the fluidized coated film to form the insulating film. The present invention permits the formation of the insulating film with excellent properties such as an ability of fill up fine grooves and to planarize the surface of the substrate, and a small shrinkage factor. The method for evaluating the coating solution using .sup.29 Si-NMR technique is also described.
摘要翻译：用于形成用于制造半导体器件的绝缘膜的涂布溶液包括由以下通式表示的硅氧烷：[SiR 3 O 1/2/2] k [SiR 2 O 2/2] l [SiRO 3/2] m [SiO 4/2] n，其中k ，l，m和n是整数，R可以相同或不同，表示至少一个有机基团，（3k + 21 + m）与（k + 1 + m + n）的比例在约0.8之间约1.3。本发明还涉及一种涂布溶液的制备方法以及使用该涂布液形成绝缘膜的方法，包括以下步骤：将涂布溶液涂布在半导体器件的基板的表面上以形成涂膜在约150℃至约300℃的温度下使涂覆膜流化，使基材表面平坦化，并使流化涂膜固化形成绝缘膜。本发明允许形成具有优异性能的绝缘膜，例如填充细槽的能力和使基板的表面平坦化，并且收缩率小。还描述了使用29Si-NMR技术评价涂布溶液的方法。

19. 发明授权

US5973402A Metal interconnection and method for making 失效
标题翻译：金属互连和制造方法
公开(公告)号：US5973402A
公开(公告)日：1999-10-26
申请号：US791161
申请日：1997-01-30
申请人： Hiroshi Shinriki , Takeshi Kaizuka , Nobuyuki Takeyasu , Tomohiro Ohta , Eiichi Kondoh , Hiroshi Yamamoto , Tomoharu Katagiri , Tadashi Nakano , Yumiko Kawano
发明人： Hiroshi Shinriki , Takeshi Kaizuka , Nobuyuki Takeyasu , Tomohiro Ohta , Eiichi Kondoh , Hiroshi Yamamoto , Tomoharu Katagiri , Tadashi Nakano , Yumiko Kawano
IPC分类号： H01L21/285 , H01L21/3213 , H01L21/768 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76838 , H01L21/28556 , H01L21/32136 , H01L21/76843 , H01L21/76856 , H01L21/76865 , H01L21/76877 , H01L23/53223 , H01L2924/0002
摘要： A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connection holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.
摘要翻译：通过在半导体衬底之上形成诸如Ti和/或高熔点金属化合物如TiN层的高熔点金属的下面的金属膜，在等离子体中蚀刻下面的金属膜的表面，在含有并在下面的金属膜上形成诸如Al，Cu，Au和Ag的互连金属膜。或者，通过在半导体衬底上形成绝缘膜，在绝缘膜上形成连接孔，通过CVD在绝缘膜上形成TiN等下面的金属膜，形成连接孔的底壁和侧壁，形成金属互连在控制条件下进行处理，并在底层金属膜上形成互连金属膜如Al。 TiN膜具有（111）优先取向，铝膜具有（111）优先取向，表面光滑，有效覆盖。如此制造的金属互连具有改进的可靠性，包括当用于半导体器件中的电迁移抗扰性并且在小型化的半导体器件中发现有利的用途。

20. 发明授权

US5840821A Coating solution and method for preparing the coating solution, method for forming insulating films for semiconductor devices, and method for evaluating the coating solution 失效
标题翻译：涂布液及其制备方法，半导体装置用绝缘膜的形成方法以及涂布液的评价方法
公开(公告)号：US5840821A
公开(公告)日：1998-11-24
申请号：US545736
申请日：1995-11-21
申请人： Tadashi Nakano , Makoto Shimura , Tomohiro Ohta
发明人： Tadashi Nakano , Makoto Shimura , Tomohiro Ohta
IPC分类号： C08G77/04 , C09D5/25 , C09D183/04 , C23C18/12 , G01N24/08 , H01L21/312 , H01L21/314 , H01L21/316 , H01L21/768 , H01L23/522 , H01L23/532 , C08G77/00
CPC分类号： H01L23/5329 , C23C18/1212 , C23C18/122 , G01N24/08 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/316 , H01L21/76801 , H01L21/76819 , H01L2924/0002
摘要： A coating solution for forming an insulating film used in production of semiconductor devices includes siloxanes represented by a general formula:�SiR.sub.3 O.sub.1/2 !.sub.k �SiR.sub.2 O.sub.2/2 !.sub.l �SiRO.sub.3/2 !.sub.m �SiO.sub.4/2 !.sub.n where each of k, l, m and n is an integer, R may be the same or different and represents at least one organic group, and a ratio of (3k+2l+m) to (k+l+m+n) is between about 0.8 and about 1.3. The present invention further relates to a method for preparing the coating solution, and a method for forming the insulating film using the coating solution, including the steps of coating the coating solution on a surface of a substrate of the semiconductor device to form a coated film, fluidizing the coated film at a temperature between about 150.degree. C. to about 300.degree. C. to planarize the surface of the substrate, and curing the fluidized coated film to form the insulating film. The present invention permits the formation of the insulating film with excellent properties such as an ability of fill up fine groves and to planarize the surface of the substrate, and a small shrinkage factor. The method for evaluating the coating solution using .sup.29 Si-NMR technique is also described.
摘要翻译： PCT No.PCT / JP94 / 01910 Sec。 371日期：1995年11月21日 102（e）日期1995年11月21日PCT 1994年11月11日PCT公布。公开号WO95 / 24639 日期1995年9月14日，用于制造半导体器件的绝缘膜形成用涂布液包括由以下通式表示的硅氧烷：[SiR 3 O 1/2/2] k [SiR 2 O 2/2] l [SiRO 3/2] m [SiO 4/2] 其中k，l，m和n各自为整数，R可以相同或不同，表示至少一个有机基团，并且（3k + 21 + m）与（k + 1 + m + n）在约0.8和约1.3之间。本发明还涉及一种涂布溶液的制备方法以及使用该涂布液形成绝缘膜的方法，包括以下步骤：将涂布溶液涂布在半导体器件的基板的表面上以形成涂膜在约150℃至约300℃的温度下使涂覆膜流化，使基材表面平坦化，并使流化涂膜固化形成绝缘膜。本发明允许形成具有优异性能的绝缘膜，例如填充细小树脂的能力和使基板的表面平坦化，并且收缩率小。还描述了使用29Si-NMR技术评价涂布溶液的方法。

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