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11. 发明授权

US08880382B2 Analyzing a patterning process using a model of yield 有权
公开(公告)号：US08880382B2
公开(公告)日：2014-11-04
申请号：US13352713
申请日：2012-01-18
申请人： Saeed Bagheri , Fook-Luen Heng , Rajiv Vasant Joshi , Kafai Lai , David Osmond Melville , Saibal Mukhopadhyay , Alan E Rosenbluth , Rama N. Singh , Kehan Tian
发明人： Saeed Bagheri , Fook-Luen Heng , Rajiv Vasant Joshi , Kafai Lai , David Osmond Melville , Saibal Mukhopadhyay , Alan E Rosenbluth , Rama N. Singh , Kehan Tian
IPC分类号： G06G7/48
CPC分类号： G06F17/5009 , G03F1/36 , G03F1/70 , G06F2217/10
摘要： Techniques are presented that include accessing results of forward simulations of circuit yield, the results including at least circuit yield results including simulated device shapes. Using the circuit yield results, high-level traits of at least the simulated device shapes are determined. Based on the determined high-level traits and using the circuit yield results, a compact model for predicted yield is constructed, the compact model including a plurality of adjustable parameters, and the constructing the compact model for predicted yield including adjusting the adjustable parameters until at least one first predetermined criterion is met. An optimization problem is constructed including at least the compact model for yield, an objective, and a plurality of constraints. Using the optimization problem, the objective is modified subject to the plurality of constraints until at least one second predetermined criterion is met.

12. 发明授权

US07944545B2 High contrast lithographic masks 有权
标题翻译：高对比度光刻面具
公开(公告)号：US07944545B2
公开(公告)日：2011-05-17
申请号：US12463742
申请日：2009-05-11
申请人： Saeed Bagheri , David O. S. Melville , Alan E. Rosenbluth , Kehan Tian
发明人： Saeed Bagheri , David O. S. Melville , Alan E. Rosenbluth , Kehan Tian
IPC分类号： G03B27/42 , G03B27/52
CPC分类号： G03B27/54 , G03F1/34
摘要： A structure and a method for an equi-brightness optimization. The method may include projecting a plurality of bright patterns having a plurality of bright points and a plurality of dark patterns having a plurality of dark points on a substrate, generating a plurality of joint eigenvectors of the plurality of bright points and a plurality of dark points, selecting a predetermined number of joint eigenvectors to project the plurality of bright patterns, generating a plurality of natural sampling points from the plurality of bright points, wherein the plurality of natural sampling points has a substantially equal intensity, and obtaining a representation of an aperture from the plurality of natural sampling points, wherein an image of the representation of the aperture has a substantially uniform intensity.
摘要翻译：用于等亮度优化的结构和方法。该方法可以包括在衬底上投影具有多个亮点的多个亮图案和具有多个暗点的多个暗图案，产生多个亮点的多个联合特征向量和多个暗点选择预定数量的联合特征向量以投影所述多个亮图案，从所述多个亮点生成多个自然采样点，其中所述多个自然采样点具有基本相等的强度，并且获得孔径的表示从所述多个天然采样点开始，其中所述孔的表示的图像具有基本均匀的强度。

13. 发明授权

US08605254B2 Constrained optimization of lithographic source intensities under contingent requirements 失效
标题翻译：偶然要求下光刻源强度的约束优化
公开(公告)号：US08605254B2
公开(公告)日：2013-12-10
申请号：US12605732
申请日：2009-10-26
申请人： Saeed Bagheri , Kafai Lai , David O. S. Melville , Alan E. Rosenbluth , Kehan Tian
发明人： Saeed Bagheri , Kafai Lai , David O. S. Melville , Alan E. Rosenbluth , Kehan Tian
IPC分类号： G03B27/54
CPC分类号： G03B27/54 , G03F7/70083 , G03F7/705
摘要： A method for illuminating a mask to project a desired image pattern into a photoactive material is described. The method includes receiving an image pattern. Determining a relationship between source pixels in a set of source pixels to desired intensities at one or more points in the image pattern is performed. Linear constraints are imposed on a set of intensity values based on one or more contingent intensity condition. The contingent intensity conditions include integer variables specifying contingent constraints. The method includes determining values of the set of intensity values in accordance with the linear constraints, using a constrained optimization algorithm. The set of intensity values represents intensities of a set of source pixels. The set of intensity values are output. Apparatus and computer readable storage media are also described.
摘要翻译：描述了用于照射掩模以将期望的图像图案投影到光活性材料中的方法。该方法包括接收图像图案。确定一组源像素中的源像素与图像图案中的一个或多个点处的期望强度之间的关系。基于一个或多个偶然强度条件对一组强度值施加线性约束。偶然强度条件包括规定偶然约束的整数变量。该方法包括使用约束优化算法根据线性约束来确定强度值集合的值。强度值集合表示一组源像素的强度。输出强度值集合。还描述了装置和计算机可读存储介质。

14. 发明申请

US20110096313A1 Constrained Optimization Of Lithographic Source Intensities Under Contingent Requirements 失效
标题翻译：有限要求的光刻源强度的约束优化
公开(公告)号：US20110096313A1
公开(公告)日：2011-04-28
申请号：US12605732
申请日：2009-10-26
申请人： Saeed Bagheri , Kafai Lai , David O.S. Melville , Alan E. Rosenbluth , Kehan Tian
发明人： Saeed Bagheri , Kafai Lai , David O.S. Melville , Alan E. Rosenbluth , Kehan Tian
IPC分类号： G03B27/54
CPC分类号： G03B27/54 , G03F7/70083 , G03F7/705
摘要： A method for illuminating a mask to project a desired image pattern into a photoactive material is described. The method includes receiving an image pattern. Determining a relationship between source pixels in a set of source pixels to desired intensities at one or more points in the image pattern is performed. Linear constraints are imposed on a set of intensity values based on one or more contingent intensity condition. The contingent intensity conditions include integer variables specifying contingent constraints. The method includes determining values of the set of intensity values in accordance with the linear constraints, using a constrained optimization algorithm. The set of intensity values represents intensities of a set of source pixels. The set of intensity values are output. Apparatus and computer readable storage media are also described.
摘要翻译：描述了用于照射掩模以将期望的图像图案投影到光活性材料中的方法。该方法包括接收图像图案。确定一组源像素中的源像素与图像图案中的一个或多个点处的期望强度之间的关系。基于一个或多个偶然强度条件对一组强度值施加线性约束。偶然强度条件包括规定偶然约束的整数变量。该方法包括使用约束优化算法根据线性约束来确定强度值集合的值。强度值集合表示一组源像素的强度。输出强度值集合。还描述了装置和计算机可读存储介质。

15. 发明申请

US20130185046A1 Analyzing A Patterning Process Using A Model Of Yield 失效
标题翻译：使用产量模型分析模式化过程
公开(公告)号：US20130185046A1
公开(公告)日：2013-07-18
申请号：US13613061
申请日：2012-09-13
申请人： Saeed Bagheri , Fook-Luen Heng , Rajiv Vasant Joshi , Kafai Lai , David Osmond Melville , Saibal Mukhopadhyay , Alan E. Rosenbluth , Rama N. Singh , Kehan Tian
发明人： Saeed Bagheri , Fook-Luen Heng , Rajiv Vasant Joshi , Kafai Lai , David Osmond Melville , Saibal Mukhopadhyay , Alan E. Rosenbluth , Rama N. Singh , Kehan Tian
IPC分类号： G06F17/50
CPC分类号： G06F17/5009 , G03F1/36 , G03F1/70 , G06F2217/10
摘要： Techniques are presented that include accessing results of forward simulations of circuit yield, the results including at least circuit yield results including simulated device shapes. Using the circuit yield results, high-level traits of at least the simulated device shapes are determined. Based on the determined high-level traits and using the circuit yield results, a compact model for predicted yield is constructed, the compact model including a plurality of adjustable parameters, and the constructing the compact model for predicted yield including adjusting the adjustable parameters until at least one first predetermined criterion is met. An optimization problem is constructed including at least the compact model for yield, an objective, and a plurality of constraints. Using the optimization problem, the objective is modified subject to the plurality of constraints until at least one second predetermined criterion is met.
摘要翻译：提出了包括访问电路产量正向模拟的结果的技术，结果至少包括电路产量结果，包括模拟设备形状。使用电路产量结果，确定至少模拟装置形状的高级特征。基于确定的高水平特征和使用电路产量结果，构建了一种预测产量的紧凑模型，该紧凑模型包括多个可调参数，并构建了用于预测产量的紧凑模型，包括调整可调参数直到满足至少一个第一预定标准。构建最优化问题，其至少包括用于产量，目标和多个约束的紧凑模型。使用优化问题，根据多个约束修改目标，直到满足至少一个第二预定标准。

16. 发明授权

US08234603B2 Method for fast estimation of lithographic binding patterns in an integrated circuit layout 有权
标题翻译：用于在集成电路布局中快速估计光刻结合图案的方法
公开(公告)号：US08234603B2
公开(公告)日：2012-07-31
申请号：US12835891
申请日：2010-07-14
申请人： Saeed Bagheri , David L. DeMaris , Maria Gabrani , David Osmond Melville , Alan E. Rosenbluth , Kehan Tian
发明人： Saeed Bagheri , David L. DeMaris , Maria Gabrani , David Osmond Melville , Alan E. Rosenbluth , Kehan Tian
IPC分类号： G06F17/50
CPC分类号： G03F1/70 , G06F17/5081
摘要： The present invention provides a lithographic difficulty metric that is a function of an energy ratio factor that includes a ratio of hard-to-print energy to easy-to-print energy of the diffraction orders along an angular coordinate θi of spatial frequency space, an energy entropy factor comprising energy entropy of said diffraction orders along said angular coordinate θi, a phase entropy factor comprising phase entropy of said diffraction orders along said angular coordinate θi, and a total energy entropy factor comprising total energy entropy of said diffraction orders. The hard-to-print energy includes energy of the diffraction orders at values of the normalized radial coordinates r of spatial frequency space in a neighborhood of r=0 and in a neighborhood of r=1, and the easy-to-print energy includes energy of the diffraction orders located at intermediate values of normalized radial coordinates r between the neighborhood of r=0 and the neighborhood of r=1. The value of the lithographic difficulty metric may be used to identify patterns in a design layout that are binding patterns in an optimization computation. The lithographic difficulty metric may be used to design integrated circuits that have good, relatively easy-to-print characteristics.
摘要翻译：本发明提供了一种光刻难度度量，其是能量比因子的函数，能量比因子包括沿着角坐标和空间频率空间的角度i的衍射级的难以打印能量的容易打印能量的比率包括沿着所述角坐标和所述角度坐标的所述衍射级的能量熵的能量熵因子; i，包括所述衍射级沿着所述角坐标系的所述衍射级的相位熵的相位熵因子; i，以及包括总能量熵的总能量熵因子说衍射订单。难以打印的能量包括在r = 0和r = 1附近的空间频率空间的归一化径向坐标r的值的衍射级的能量，并且易于打印的能量包括位于r = 0的邻域和r = 1附近的归一化的径向坐标r的中间值处的衍射级的能量。光刻难度度量的值可用于识别在优化计算中的结合模式的设计布局中的图案。光刻难度度可用于设计具有良好，相对易于打印的特性的集成电路。

17. 发明授权

US08682634B2 Analyzing a patterning process using a model of yield 失效
标题翻译：使用产量模型分析图案化过程
公开(公告)号：US08682634B2
公开(公告)日：2014-03-25
申请号：US13613061
申请日：2012-09-13
申请人： Saeed Bagheri , Fook-Luen Heng , Rajiv Vasant Joshi , Kafai Lai , David Osmond Melville , Saibal Mukhopadhyay , Alan E Rosenbluth , Rama N. Singh , Kehan Tian
发明人： Saeed Bagheri , Fook-Luen Heng , Rajiv Vasant Joshi , Kafai Lai , David Osmond Melville , Saibal Mukhopadhyay , Alan E Rosenbluth , Rama N. Singh , Kehan Tian
IPC分类号： G06F17/50 , G06G7/62
CPC分类号： G06F17/5009 , G03F1/36 , G03F1/70 , G06F2217/10
摘要： Techniques are presented that include accessing results of forward simulations of circuit yield, the results including at least circuit yield results including simulated device shapes. Using the circuit yield results, high-level traits of at least the simulated device shapes are determined. Based on the determined high-level traits and using the circuit yield results, a compact model for predicted yield is constructed, the compact model including a plurality of adjustable parameters, and the constructing the compact model for predicted yield including adjusting the adjustable parameters until at least one first predetermined criterion is met. An optimization problem is constructed including at least the compact model for yield, an objective, and a plurality of constraints. Using the optimization problem, the objective is modified subject to the plurality of constraints until at least one second predetermined criterion is met.
摘要翻译：提出了包括访问电路产量正向模拟的结果的技术，结果至少包括电路产量结果，包括模拟设备形状。使用电路产量结果，确定至少模拟装置形状的高级特征。基于确定的高水平特征和使用电路产量结果，构建了一种预测产量的紧凑模型，该紧凑模型包括多个可调参数，并构建了用于预测产量的紧凑模型，包括调整可调参数直到满足至少一个第一预定标准。构建最优化问题，其至少包括用于产量，目标和多个约束的紧凑模型。使用优化问题，根据多个约束修改目标，直到满足至少一个第二预定标准。

18. 发明申请

US20120017194A1 METHOD FOR FAST ESTIMATION OF LITHOGRAPHIC BINDING PATTERNS IN AN INTEGRATED CIRCUIT LAYOUT 有权
标题翻译：用于快速估计集成电路布局中的平面结合图案的方法
公开(公告)号：US20120017194A1
公开(公告)日：2012-01-19
申请号：US12835891
申请日：2010-07-14
申请人： Saeed Bagheri , David L. DeMaris , Maria Gabrani , David Osmond Melville , Alan E. Rosenbluth , Kehan Tian
发明人： Saeed Bagheri , David L. DeMaris , Maria Gabrani , David Osmond Melville , Alan E. Rosenbluth , Kehan Tian
IPC分类号： G06F9/455 , G06F17/50
CPC分类号： G03F1/70 , G06F17/5081
摘要： The present invention provides a lithographic difficulty metric that is a function of an energy ratio factor that includes a ratio of hard-to-print energy to easy-to-print energy of the diffraction orders along an angular coordinate θi spatial frequency space, an energy entropy factor comprising energy entropy of said diffraction orders along said angular coordinate θi, a phase entropy factor comprising phase entropy of said diffraction orders along said angular coordinate θi, and a total energy entropy factor comprising total energy entropy of said diffraction orders. The hard-to-print energy includes energy of the diffraction orders at values of the normalized radial coordinates r of spatial frequency space in a neighborhood of r=0 and in a neighborhood of r=1, and the easy-to-print energy includes energy of the diffraction orders located at intermediate values of normalized radial coordinates r between the neighborhood of r=0 and the neighborhood of r=1. The value of the lithographic difficulty metric may be used to identify patterns in a design layout that are binding patterns in an optimization computation. The lithographic difficulty metric may be used to design integrated circuits that have good, relatively easy-to-print characteristics.
摘要翻译：本发明提供了一种光刻难度度量，其是能量比因子的函数，能量比因子包括沿着角坐标系的衍射级的难以打印能量与易于打印能量的比率; i空间频率空间，包括沿着所述角坐标和所述衍射级的能量熵的能量熵因子; i，包括所述衍射级沿着所述角坐标和所述角度的所述衍射级的相位熵的相位熵因子; i，以及包括所述总体能量熵的总能量熵因子衍射指令。难以打印的能量包括在r = 0和r = 1附近的空间频率空间的归一化径向坐标r的值的衍射级的能量，并且易于打印的能量包括位于r = 0的邻域和r = 1附近的归一化的径向坐标r的中间值处的衍射级的能量。光刻难度度量的值可用于识别在优化计算中的结合模式的设计布局中的图案。光刻难度度可用于设计具有良好的，相对易于打印的特性的集成电路。

19. 发明申请

US20100283982A1 High Contrast Lithographic Masks 有权
标题翻译：高对比度平版印刷面膜
公开(公告)号：US20100283982A1
公开(公告)日：2010-11-11
申请号：US12463742
申请日：2009-05-11
申请人： Saeed Bagheri , David O.S. Melville , Alan E. Rosenbluth , Kehan Tian
发明人： Saeed Bagheri , David O.S. Melville , Alan E. Rosenbluth , Kehan Tian
IPC分类号： G03B27/54
CPC分类号： G03B27/54 , G03F1/34
摘要： A structure and a method for an equi-brightness optimization. The method may include projecting a plurality of bright patterns having a plurality of bright points and a plurality of dark patterns having a plurality of dark points on a substrate, generating a plurality of joint eigenvectors of the plurality of bright points and a plurality of dark points, selecting a predetermined number of joint eigenvectors to project the plurality of bright patterns, generating a plurality of natural sampling points from the plurality of bright points, wherein the plurality of natural sampling points has a substantially equal intensity, and obtaining a representation of an aperture from the plurality of natural sampling points, wherein an image of the representation of the aperture has a substantially uniform intensity.
摘要翻译：用于等亮度优化的结构和方法。该方法可以包括在衬底上投影具有多个亮点的多个亮图案和具有多个暗点的多个暗图案，产生多个亮点的多个联合特征向量和多个暗点选择预定数量的联合特征向量以投影所述多个亮图案，从所述多个亮点生成多个自然采样点，其中所述多个自然采样点具有基本相等的强度，并且获得孔径的表示从所述多个天然采样点开始，其中所述孔的表示的图像具有基本均匀的强度。

20. 发明授权

US08694354B2 Transition phase trouble detection in services delivery management 失效
标题翻译：过渡阶段故障检测在服务交付管理中
公开(公告)号：US08694354B2
公开(公告)日：2014-04-08
申请号：US12955475
申请日：2010-11-29
申请人： Saeed Bagheri , Douglas C. Bunch , Theresa E. Ell , Krishna C. Ratakonda , Katrina M. Reffett , Rose M. Williams
发明人： Saeed Bagheri , Douglas C. Bunch , Theresa E. Ell , Krishna C. Ratakonda , Katrina M. Reffett , Rose M. Williams
IPC分类号： G06Q10/00 , G06Q10/06 , G06Q10/10
CPC分类号： G06Q10/06313 , G06Q10/00 , G06Q10/0635 , G06Q10/06393 , G06Q10/06395 , G06Q10/103
摘要： A method, system, and/or computer program product predicts trouble during a transition phase of a current project. Past operational data and past trouble data for past healthy projects and past troubled projects before transition phases is collected. A trouble correlation between the past operational data and the past trouble data is then determined. A set of key metrics that describes a current health of a current project before transitioning from a current phase to a future phase is defined, and values of the set of key metrics for the current project are identified. Identified values of the set of key metrics for the current project are compared to the past operational data for past healthy and troubled projects in order to generate a pattern comparison. This pattern comparison, along with the trouble correlation, is used to generate a predicted quality of transition for the current project.
摘要翻译：方法，系统和/或计算机程序产品预测在当前项目的过渡阶段期间的麻烦。过去的健康项目和过去困难的项目的过去业务数据和过去的故障数据，在过渡阶段收集之前。然后确定过去操作数据与过去故障数据之间的故障相关性。定义了一组关键指标，描述当前项目从当前阶段转移到未来阶段的当前运行状况，并确定当前项目的关键指标集合的值。将当前项目的一组关键指标的确定值与过去健康和困扰的项目的过去业务数据进行比较，以生成模式比较。这种模式比较以及故障相关性用于生成当前项目的预测转换质量。

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