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11. 发明授权

US08173476B2 Image pickup device and image pickup system 有权
公开(公告)号：US08173476B2
公开(公告)日：2012-05-08
申请号：US12481008
申请日：2009-06-09
申请人： Takanori Watanabe , Tetsuya Itano , Mahito Shinohara
发明人： Takanori Watanabe , Tetsuya Itano , Mahito Shinohara
IPC分类号： H04N5/335
CPC分类号： H04N5/3598 , H04N5/3595 , H04N5/374
摘要： There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage of the floating node to a signal line, and a clip circuit clipping the signal line at a first voltage and a second voltage.

12. 发明申请

US20110281392A1 METHOD FOR MANUFACTURING SOLID-STATE IMAGE SENSOR 有权
标题翻译：制造固态图像传感器的方法
公开(公告)号：US20110281392A1
公开(公告)日：2011-11-17
申请号：US13088465
申请日：2011-04-18
申请人： Takanori Watanabe
发明人： Takanori Watanabe
IPC分类号： H01L31/18
CPC分类号： H01L27/14689 , H01L27/14641 , H01L27/14643
摘要： A method for manufacturing a sensor having pixels on a substrate, each pixel including a photoelectric converter, a charge-voltage converter, and a gate for forming a channel for transferring charges in the photoelectric converter to the charge-voltage converter, comprises a step of implanting ions into target regions, of the substrate, where the photoelectric converters are to be formed, wherein the step is performed N times, in each of the steps, the ions are implanted along a direction with an inclined angle with respect to a normal to the substrate surface, the target regions where the ions are implanted are different in each step, and for each step, a mask is formed on the substrate, having an opening for every N pixels, a plurality of the openings periodically arranged in a direction along an intersection line between the surface and a plane determined by the normal and the direction.
摘要翻译：一种用于制造在基板上具有像素的传感器的方法，每个像素包括光电转换器，电荷 - 电压转换器和用于形成用于将光电转换器中的电荷转移到电荷 - 电压转换器的通道的栅极，包括以下步骤：将离子注入到要形成光电转换器的衬底的靶区域中，其中步骤进行N次，在每个步骤中，离子沿着相对于法向的倾斜角度的方向注入衬底表面，离子注入的目标区域在每个步骤中是不同的，并且对于每个步骤，在基板上形成掩模，每个N个像素具有开口，沿着沿着方向周期性地排列的多个开口表面与平面和方向确定的平面之间的交点。

13. 发明申请

US20110242388A1 IMAGE SENSING DEVICE AND CAMERA 有权
标题翻译：图像传感装置和摄像机
公开(公告)号：US20110242388A1
公开(公告)日：2011-10-06
申请号：US13139558
申请日：2010-01-20
申请人： Takanori Watanabe , Mineo Shimotsusa , Takeshi Ichikawa , Hajime Ikeda , Yasuhiro Sekine , Akira Ohtani , Takeshi Kojima
发明人： Takanori Watanabe , Mineo Shimotsusa , Takeshi Ichikawa , Hajime Ikeda , Yasuhiro Sekine , Akira Ohtani , Takeshi Kojima
IPC分类号： H04N5/335 , H01L27/146
CPC分类号： H01L27/1463 , H01L27/14609 , H01L27/1464 , H01L27/14641 , H01L27/14689 , H01L29/7833
摘要： An image sensing device comprises a pixel array, and a peripheral circuit, a column selecting circuit, and a readout, wherein each pixel includes a photodiode, a floating diffusion, a transfer PMOS transistor to the floating diffusion, an amplifier PMOS transistor, and a reset PMOS transistor, the amplifier PMOS transistor has a gate which is formed by an n-type conductive pattern, and is isolated by a first element isolation region and an n-type impurity region which covers at least a lower portion of the first element isolation region, and each PMOS transistor included in the column selecting circuit has a gate which is formed by a p-type conductive pattern and is isolated by a second element isolation region, and an n-type impurity concentration in a region adjacent to a lower portion of the second element isolation region is lower than that in the n-type impurity region.
摘要翻译：图像感测装置包括像素阵列，外围电路，列选择电路和读出器，其中每个像素包括光电二极管，浮动扩散，到浮动扩散的转移PMOS晶体管，放大器PMOS晶体管和复位PMOS晶体管，放大器PMOS晶体管具有由n型导电图案形成的栅极，并且被第一元件隔离区域和覆盖至少第一元件隔离的下部的n型杂质区隔离区域，并且列选择电路中包括的每个PMOS晶体管具有由p型导电图案形成并由第二元件隔离区域隔离的栅极，并且与下部分相邻的区域中的n型杂质浓度的第二元件隔离区域低于n型杂质区域。

14. 发明申请

US20110240835A1 PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD THEREOF, AND CAMERA 有权
标题翻译：光电转换装置的制造方法及相机
公开(公告)号：US20110240835A1
公开(公告)日：2011-10-06
申请号：US13139588
申请日：2010-01-08
申请人： Tadashi Sawayama , Katsunori Hirota , Takanori Watanabe , Takeshi Ichikawa
发明人： Tadashi Sawayama , Katsunori Hirota , Takanori Watanabe , Takeshi Ichikawa
IPC分类号： H01L27/14 , H01L31/02
CPC分类号： H01L27/14689 , H01L27/1463 , H01L27/1464 , H01L27/14641 , H01L27/14643
摘要： A photoelectric conversion device comprises an n-type surface region, a p-type region which is formed under the surface region, and an n-type buried layer which is formed under the p-type region, wherein the surface region, the p-type region, and the buried layer form a buried photodiode, and a diffusion coefficient of a dominant impurity of the surface region is smaller than a diffusion coefficient of a dominant impurity of the buried layer.
摘要翻译：光电转换装置包括n型表面区域，形成在表面区域下方的p型区域和形成在p型区域下面的n型掩埋层，其中，表面区域，p-型区域，并且掩埋层形成掩埋光电二极管，并且表面区域的主要杂质的扩散系数小于掩埋层的主要杂质的扩散系数。

15. 发明申请

US20100203667A1 MANUFACTURING METHOD FOR A SOLID-STATE IMAGE SENSOR 有权
标题翻译：一种固态图像传感器的制造方法
公开(公告)号：US20100203667A1
公开(公告)日：2010-08-12
申请号：US12697420
申请日：2010-02-01
申请人： Katsunori Hirota , Akira Ohtani , Kazuaki Tashiro , Yusuke Onuki , Takanori Watanabe , Takeshi Ichikawa
发明人： Katsunori Hirota , Akira Ohtani , Kazuaki Tashiro , Yusuke Onuki , Takanori Watanabe , Takeshi Ichikawa
IPC分类号： H01L31/18 , H01L21/265
CPC分类号： H01L27/14689 , H01L21/26513 , H01L21/324 , H01L27/14621 , H01L27/14643 , H01L27/14698
摘要： A manufacturing method for a solid-state image sensor, the method comprises the steps of: forming a charge storage region in a photoelectric converting unit by implanting a semiconductor substrate with ions of an impurity of a first conductivity type, using a first mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); forming a surface region of the charge storage region by implanting the semiconductor substrate with ions of an impurity of a second conductivity type, using a second a mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); and forming an antireflection film that covers the photoelectric converting unit at a temperature of less than 800° C., after the step of forming the surface region, in this order.
摘要翻译：一种固态图像传感器的制造方法，该方法包括以下步骤：利用第一掩模，通过用第一导电类型的杂质的离子注入半导体衬底，在光电转换单元中形成电荷存储区; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 通过使用第二掩模将具有第二导电类型的杂质的离子注入半导体衬底来形成电荷存储区域的表面区域; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 以及在形成表面区域的步骤之后依次形成在小于800℃的温度下覆盖光电转换单元的抗反射膜。

16. 发明申请

US20090244340A1 IMAGE PICKUP DEVICE AND IMAGE PICKUP SYSTEM 有权
标题翻译：图像拾取器件和图像拾取系统
公开(公告)号：US20090244340A1
公开(公告)日：2009-10-01
申请号：US12481008
申请日：2009-06-09
申请人： Takanori Watanabe , Tetsuya Itano , Mahito Shinohara
发明人： Takanori Watanabe , Tetsuya Itano , Mahito Shinohara
IPC分类号： H04N5/335
CPC分类号： H04N5/3598 , H04N5/3595 , H04N5/374
摘要： There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage of the floating node to a signal line, and a clip circuit clipping the signal line at a first voltage and a second voltage.
摘要翻译：提供了一种图像拾取装置，包括将光转换成电荷的光电转换元件，用于将转换的电荷转移到浮动节点的传输门，源极跟随器晶体管，用于基于浮动节点的电压将信号输出到信号线和钳位电路，在第一电压和第二电压下限幅信号线。

17. 发明申请

US20090159945A1 IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM 有权
标题翻译：图像拾取装置和图像拾取系统
公开(公告)号：US20090159945A1
公开(公告)日：2009-06-25
申请号：US12390836
申请日：2009-02-23
申请人： Akira Okita , Masanori Ogura , Seiichiro Sakai , Takanori Watanabe
发明人： Akira Okita , Masanori Ogura , Seiichiro Sakai , Takanori Watanabe
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/1463 , H01L27/14641
摘要： To provide a solid-state image pickup apparatus with little or no difference in the dark currents between adjacent photoelectric conversion elements and providing a high sensitivity and a low dark current even in a high-speed readout operation.A well 302 is formed on a wafer 301, and semiconductor layers 101a, 101b are formed in the well to constitute photodiodes. A well contact 306 is formed between the semiconductor layers 101a, 101b. Element isolation regions 303b, 303a are provided between the well contact and the semiconductor layers, and channel stop layers 307b, 307a are provided under the element isolation regions 303b, 303a. A conductive layer 304 is provided on the element isolation region 303b, and a side wall 308 is provided on a side face of the conductive layer 304. A distance a between an end of the element isolation region 303b and the conductive layer 304, a width b of the side wall 308 and a device isolation width c satisfy a relation c>a≧b.
摘要翻译：为了提供即使在高速读出操作中，相邻的光电转换元件之间的暗电流几乎或没有差异，并且提供高灵敏度和低暗电流的固态图像拾取装置。阱302形成在晶片301上，半导体层101a，101b形成在阱中以构成光电二极管。在半导体层101a，101b之间形成阱接触306。元件隔离区域303b，303a设置在阱接触件和半导体层之间，并且通道阻挡层307b，307a设置在元件隔离区域303b，303a的下方。导电层304设置在元件隔离区域303b上，侧壁308设置在导电层304的侧面上。元件隔离区域303b的一端与导电层304之间的距离a，宽度侧壁308的b和设备隔离宽度c满足关系c> a> = b。

18. 发明授权

US07152987B2 Instrument for vehicle 有权
标题翻译：车辆仪表
公开(公告)号：US07152987B2
公开(公告)日：2006-12-26
申请号：US10308034
申请日：2002-12-03
申请人： Yoshiyuki Furuya , Takanori Watanabe , Ichiro Kataoka
发明人： Yoshiyuki Furuya , Takanori Watanabe , Ichiro Kataoka
IPC分类号： G01D11/28
CPC分类号： G02B6/0038 , B60K37/02 , B60K2350/203 , B60K2350/2034 , B60K2350/206 , B60Q3/12 , B60Q3/64 , G02B6/0073 , G02B6/0081
摘要： An instrument for a vehicle, by which an instrument board thereof can be seen as well at night as in the daytime is provided. In the instrument, an illuminating panel 50 including a prism sheet 50a transforms light from an LED 50b into planar light illumination for the instrument board 40, the prism sheet 50a on which prisms arranged in a sawtooth shape to form a prism alley P at a vehicle driver side thereof.
摘要翻译：提供了一种用于车辆的仪器，其中可以在白天在晚上看到其仪表板。在仪器中，包括棱镜片50a的照明面板50将来自LED50b的光转换成用于仪表板40的平面光照明，棱镜片50a，其上以锯齿形布置棱镜，以形成棱镜孔P 在车辆驾驶员侧。

19. 发明申请

US20060044434A1 Image pickup apparatus and image pickup system 有权
标题翻译：摄像设备和摄像系统
公开(公告)号：US20060044434A1
公开(公告)日：2006-03-02
申请号：US11214834
申请日：2005-08-31
申请人： Akira Okita , Masanori Ogura , Takanori Watanabe , Seiichiro Sakai
发明人： Akira Okita , Masanori Ogura , Takanori Watanabe , Seiichiro Sakai
IPC分类号： H04N5/335
CPC分类号： H01L27/14603 , H01L27/1463 , H01L27/14641 , H01L27/14643
摘要： To provide a solid-state image pickup apparatus with little or no difference in the dark currents between adjacent photoelectroc conversion elements and providing a high sensitivity and a low dark current even in-a high-speed readout operation. A well is formed on a wafer, and diffusion layers are formed in the well to constitute a photodiode. A well contact is formed between the diffusion layers. Element isolation regions are provided between the well contact and the diffusion layers, and conductive layers are provided respectively on the element isolation regions, thereby reducing a difference in the minority carrier diffusions from the well contact to the photodiodes (diffusion layers).
摘要翻译：为了提供即使在高速读出操作中，相邻光电转换元件之间的暗电流几乎或没有差异并且提供高灵敏度和低暗电流的固态图像拾取装置。在晶片上形成阱，并且在阱中形成扩散层以构成光电二极管。在扩散层之间形成良好的接触。在阱接触和扩散层之间提供元件隔离区域，并且在元件隔离区域上分别设置导电层，从而减少少数载流子扩散与阱接触到光电二极管（扩散层）的差异。

20. 发明申请

US20050006676A1 Solid-state image sensor, production method for solid-state image sensor, and camera using solid-state image sensor 有权
标题翻译：固态图像传感器，固态图像传感器的制作方法和使用固态图像传感器的相机
公开(公告)号：US20050006676A1
公开(公告)日：2005-01-13
申请号：US10842443
申请日：2004-05-11
申请人： Takanori Watanabe
发明人： Takanori Watanabe
IPC分类号： H01L27/146 , H04N5/335 , H04N5/357 , H04N5/369 , H01L21/00 , H01L31/062
CPC分类号： H01L27/14643 , H01L27/14609
摘要： A solid-state image sensor includes, in each pixel, a p-type well provided on a semiconductor substrate, a photodiode provided in the p-type well, a transfer gate for transferring photocharges accumulated in the photodiode, and an n-type diffusion region for receiving the transferred photocharges. The photodiode includes a first n-type accumulation region, and a second n-type accumulation region having a concentration higher than that of the first accumulation region and provided at a position deeper than the first accumulation region. The first accumulation region extends toward an end of the transfer gate, and the second accumulation region is separate from the transfer gate.
摘要翻译：固态图像传感器在每个像素中包括设置在半导体衬底上的p型阱，设置在p型阱中的光电二极管，用于传送积聚在光电二极管中的光电荷的转移栅和n型扩散用于接收转印的光电荷的区域。光电二极管包括第一n型累积区域和具有比第一累积区域的浓度高的浓度的第二n型累积区域，并且设置在比第一累积区域更深的位置。第一累积区域朝向传输栅极的端部延伸，并且第二堆积区域与传输栅极分离。

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