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11. 发明专利

JP2015053775A 半導体電力変換装置审中-公开
标题翻译：半导体功率转换器件
公开(公告)号：JP2015053775A
公开(公告)日：2015-03-19
申请号：JP2013184518
申请日：2013-09-05
申请人：株式会社東芝 , Toshiba Corp
发明人： OBE TOSHIHARU
IPC分类号： H02M7/48 , H01L23/34 , H01L25/07 , H01L25/18
摘要：【課題】小型化、冷却効率の向上が可能な半導体電力変換装置を提供する。【解決手段】実施形態によれば、半導体電力変換装置は、第1導電体61と、第2導電体63と、SiCを含み板状に形成され、一方の電極が第1導電体の第1接合面に接合され、他方の電極が第2導電体の第2接合面に接合された第1半導体素子と、一方の電極が前記第1導電体の第1接合面に接合され、他方の電極が前記第2導電体の第2接合面に接合された第2半導体素子51aと、第1、第2導電体の第1、第2底面がシート状絶縁体66を介して載置された平坦な受熱面67aと受熱面に対向する平坦な放熱面67bとを有する放熱用金属板67と、放熱用金属板の放熱面に接合された冷却ブロック82を有する冷却器80と、を備えている。冷却ブロックは、放熱面に面接した平坦な接合面82aと、接合面に開口する矩形状の開口を有し、放熱面に接して冷媒を流す冷媒流路を形成した矩形状の凹所86と、凹所の周囲を囲んで設けられたシール材92と、を有している。【選択図】図4
摘要翻译：要解决的问题：提供一种能够实现小型化和提高冷却效率的半导体功率转换装置。解决方案根据实施例，半导体功率转换装置包括：第一导体61; 第二导体63; 包含SiC并形成为板状的第一半导体元件，其一个电极与第一导体的第一接合面接合，另一个电极与第二导体的第二接合面接合; 第二半导体元件51a，其电极之一与第一导体的第一接合面接合，另一方的电极与第二导体的第二接合面接合; 散热金属板67包括平坦的热接收表面67a，第一和第二导体的第一和第二底表面通过片状绝缘体66安装在其上，平坦的散热表面67b与热量相对接待面; 以及冷却器80，其包括连接到散热金属板的散热表面的冷却块82。冷却块包括：与热辐射表面表面接触的平坦接合表面82a; 矩形凹部86，其包括在接合表面中开口的矩形开口，并形成冷却剂通道，冷却剂通过该冷却剂通道，同时接触热辐射表面; 以及设置成围绕凹部的周边的密封材料92。

12. 发明专利

JP2010118533A Semiconductor device, and method of manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2010118533A
公开(公告)日：2010-05-27
申请号：JP2008291178
申请日：2008-11-13
申请人： Toshiba Corp , 株式会社東芝
发明人： TAN TORONRON , KURI YUUJI , OBE TOSHIHARU , NINOMIYA TAKESHI , SEKIYA HIRONORI
IPC分类号： H01L23/40 , H01L21/331 , H01L29/73
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a long-life and inexpensive semiconductor device which has superior electric characteristics and thermal conduction characteristics, and to provide a method of manufacturing the same. SOLUTION: The module semiconductor device includes a semiconductor chip 1, an emitter electrode 2 joined to an emitter side of the semiconductor chip 1, a collector electrode 3 joined to a collector side of the semiconductor chip 1, a first heat dissipating body 4 joined to the opposite side of the emitter electrode 2 to the semiconductor chip 1, a second heat dissipating body 5 joined to the opposite side of the collector electrode 3 to the semiconductor chip 1, and joining materials (2a, 2b, 2c, 3a, 3b, 3c) for joining the semiconductor chip 1, the emitter electrode 2, and first heat dissipating body 4, and the semiconductor chip 1, collector electrode 3, and second heat dissipating body 5, the joining materials (2a, 2b, 2c, 3a, 3b, 3c) being previously formed on surfaces of the emitter electrode 2 and the collector electrode 3, and the first heat dissipating body 4 and the second heat dissipating body 5. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：为了提供具有优异的电特性和导热特性的长寿命且廉价的半导体器件，并提供其制造方法。解决方案：模块半导体器件包括半导体芯片1，连接到半导体芯片1的发射极侧的发射极2，与半导体芯片1的集电极侧接合的集电极3，第一散热体 4连接到半导体芯片1的发射极电极2的相反侧，与半导体芯片1接合到集电极3的相对侧的第二散热体5和接合材料（2a，2b，2c，3a），3b，3c），用于接合半导体芯片1，发射极电极2和第一散热体4，半导体芯片1，集电电极3和第二散热体5，接合材料（2a，2b，2c），3a，3b，3c）预先形成在发射电极2和集电极3的表面上，以及第一散热体4和第二散热体5.版权所有（C）2010，JPO＆INPIT

13. 发明专利

JP2010016924A Power semiconductor module and semiconductor power conversion device equipped with the same 有权
标题翻译：功率半导体模块和半导体功率转换器件
公开(公告)号：JP2010016924A
公开(公告)日：2010-01-21
申请号：JP2008172411
申请日：2008-07-01
申请人： Toshiba Corp , 株式会社東芝
发明人： NINOMIYA TAKESHI , OBE TOSHIHARU , UEDA KAZUHIRO , SHIMIZU SADAYUKI , BABA SHINICHI
IPC分类号： H02M7/48
摘要： PROBLEM TO BE SOLVED: To provide a more compact power semiconductor module improved in cooling efficiency, and to provide a semiconductor power conversion device. SOLUTION: The power semiconductor module is provided with: a plurality of first system semiconductor elements 41a, 41b configuring arms respectively in a first system circuit; a plurality of second system semiconductor elements 41c, 42d configuring arms respectively in a second system circuit; a plurality of DC electrode conductors 61, 62 connected to the first system semiconductor element and the second system semiconductor element and including a DC electrode conductor in common between the first and second system semiconductor electrodes; and a plurality of AC electrode conductors 63, 64 connected to the first system semiconductor element and the second system semiconductor elements respectively. The first system semiconductor element and the second system semiconductor element are each disposed between the DC electrode conductor and the AC electrode conductor. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供提高冷却效率的更紧凑的功率半导体模块，并提供半导体功率转换装置。解决方案：功率半导体模块设置有分别配置在第一系统电路中的臂的多个第一系统半导体元件41a，41b; 多个第二系统半导体元件41c，42d分别配置在第二系统电路中; 连接到第一系统半导体元件和第二系统半导体元件的多个直流电极导体61,62，在第一和第二系统半导体电极之间共同包括直流电极导体; 以及分别连接到第一系统半导体元件和第二系统半导体元件的多个AC电极导体63,64。第一系统半导体元件和第二系统半导体元件分别设置在DC电极导体和AC电极导体之间。版权所有（C）2010，JPO＆INPIT

14. 发明专利

JP2009278712A Inverter apparatus 审中-公开
标题翻译：逆变器装置
公开(公告)号：JP2009278712A
公开(公告)日：2009-11-26
申请号：JP2008125128
申请日：2008-05-12
申请人： Toshiba Corp , 株式会社東芝
发明人： TADA NOBUMITSU , OBE TOSHIHARU , MORIKAWA RYUICHI , HASEGAWA RYUTA
IPC分类号： H02M7/48
摘要： PROBLEM TO BE SOLVED: To provide an inverter apparatus which is superior in coolability and can reconcile its downsizing and its reliability enhancement. SOLUTION: The inverter apparatus has a capacitor module 10, which constitutes a DC smoothing circuit, and a power semiconductor module, which constitutes the inverting circuit of an inverter. The capacitor module includes a capacitor case 4, which is made of metal having heat conductivity, an insulating film 9, which has electric insulation, being made on the inner face of the capacitor case, a plurality of capacitor elements 7, which are accommodated in the capacitor case, each in contact with the insulating film, and an insulating sealing material 8, which protects the capacitor elements, being filled in around the capacitor elements within the capacitor case. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有优异的冷却性能并且可以调节其小型化及其可靠性提高的逆变器装置。解决方案：逆变器装置具有构成DC平滑电路的电容器模块10和构成逆变器的反相电路的功率半导体模块。电容器模块包括由导热性金属制成的电容器壳体4，在电容器壳体的内表面上形成具有电绝缘性的绝缘膜9，多个电容器元件7，容纳在电容器壳体4中。每个与绝缘膜接触的电容器壳体和保护电容器元件的绝缘密封材料8填充在电容器壳体内的电容器元件周围。版权所有（C）2010，JPO＆INPIT

15. 发明专利

JP2009094164A Power semiconductor element in inverter device 审中-公开
标题翻译：逆变器装置中的功率半导体元件
公开(公告)号：JP2009094164A
公开(公告)日：2009-04-30
申请号：JP2007261262
申请日：2007-10-04
申请人： Toshiba Corp , 株式会社東芝
发明人： TADA NOBUMITSU , OBE TOSHIHARU , NINOMIYA TAKESHI , MORIKAWA RYUICHI , HASEGAWA RYUTA
IPC分类号： H01L25/07 , H01L25/18 , H02M7/48
摘要： PROBLEM TO BE SOLVED: To provide a power semiconductor element in an inverter device, which has high reliability in an external force. SOLUTION: The power semiconductor element 10 in the inverter device comprises: a semiconductor chip; a heat dissipation plate for dissipating heat generated from the semiconductor chip; an internal wiring conductor for electric connection and heat diffusion of the semiconductor chip; an external wiring terminal connected to the internal wiring conductor; and an electrically insulative case. The case is provided with: an external frame member 52 having terminal holding member fitting holes on both sides respectively; and terminal holding members 53, 54 holding the external wiring terminal and inserted into each of the terminal holding member fitting holes of both the sides of the external frame member. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种在外力上具有高可靠性的逆变器装置中的功率半导体元件。解决方案：逆变器装置中的功率半导体元件10包括：半导体芯片; 用于散发从半导体芯片产生的热量的散热板; 用于半导体芯片的电连接和热扩散的内部布线导体; 连接到内部布线导体的外部布线端子; 和电绝缘壳。壳体设置有：外框架构件52，其两侧分别具有端子保持构件嵌合孔; 以及端子保持构件53,54，其保持外部布线端子并插入到外框架构件的两侧的每个端子保持构件安装孔中。版权所有（C）2009，JPO＆INPIT

16. 发明专利

JP2007215302A Inverter apparatus 审中-公开
标题翻译：逆变器装置
公开(公告)号：JP2007215302A
公开(公告)日：2007-08-23
申请号：JP2006031422
申请日：2006-02-08
申请人： Toshiba Corp , 株式会社東芝
发明人： TADA NOBUMITSU , MORIKAWA RYUICHI , OBE TOSHIHARU , SEKIYA HIRONORI , NINOMIYA TAKESHI , YOSHIOKA SHINPEI
IPC分类号： H02M7/48 , H01L23/36 , H02M7/5387
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an inverter apparatus for improving the durability against an external force. SOLUTION: The inverter apparatus has a positive conductor 33, a negative conductor 37 and a AC conductor 35 bonded to a surface of a heat sink 22, an IGBT and a diode bonded between the positive conductor 33 and the AC conductor 35, an IGBT and a diode bonded between the negative conductor 37 and the AC conductor 35, a positive electrode terminal 39 provided in the positive conductor 33, a negative electrode terminal 40 provided in the negative conductor 37, and output terminals 41, 42 provided in the AC conductor 35. The positive electrode terminal 39, the negative electrode terminal 40 and the output terminals 41, 42 are bent so as to be parallel to the surface of the heat sink 22. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于提高耐外力的耐久性的逆变器装置。解决方案：逆变器装置具有接合到散热器22的表面的正导体33，负导体37和AC导体35，连接在正导体33和AC导体35之间的IGBT和二极管，接合在负导体37和AC导体35之间的IGBT和二极管，设置在正导体33中的正极端子39，设置在负导体37中的负极端子40，以及设置在负导体37中的输出端子41,42。 AC导体35.正极端子39，负极端子40和输出端子41,42被弯曲成平行于散热器22的表面。（C）2007年，JPO和INPIT

17. 发明专利

JP2005079386A Power semiconductor application apparatus 审中-公开
标题翻译：功率半导体应用设备
公开(公告)号：JP2005079386A
公开(公告)日：2005-03-24
申请号：JP2003308948
申请日：2003-09-01
申请人： Toshiba Corp , 株式会社東芝
发明人： TADA NOBUMITSU , OBE TOSHIHARU
IPC分类号： H01L23/36
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a small but highly reliable power semiconductor application apparatus by decreasing the total heat resistance in the heat path from a power semiconductor chip to an air-cooled heatsink for a reduction in size of the air-cooled heatsink and by constructing a structure not requiring extra bolt torquing or grease replacement. SOLUTION: In this power semiconductor application apparatus having a built-in IGBT chip 1 which is a power semiconductor element and a built-in heatsink for radiating the heat produced by the IGBT chip 1, the IGBT chip 1 is bonded to the front surface of a metal plate 3 and an air-cooled fin 4 is bonded to the rear surface of the metal plate 3. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了通过降低从功率半导体芯片到空气冷却散热器的热路径中的总体耐热性来提供小而高度可靠的功率半导体施加装置，以减小空气冷却的尺寸通过构造不需要额外的螺栓扭矩或更换润滑脂的结构。解决方案：在具有作为功率半导体元件的内置IGBT芯片1和用于照射由IGBT芯片1产生的热的内置散热器的功率半导体施加装置中，IGBT芯片1被接合到金属板3的前表面和风冷翅片4接合到金属板3的后表面。版权所有（C）2005，JPO＆NCIPI

18. 发明专利

JP2000228491A SEMICONDUCTOR MODULE AND POWER CONVERTER 失效
公开(公告)号：JP2000228491A
公开(公告)日：2000-08-15
申请号：JP3081199
申请日：1999-02-09
申请人： TOSHIBA CORP
发明人： OBE TOSHIHARU
IPC分类号： H01L25/07 , H01L25/18
摘要： PROBLEM TO BE SOLVED: To suppress shortening of lifetime while reducing the cost by dealing with increase in the heating loss of a power semiconductor element thereby enhancing the reliability thereof. SOLUTION: In a semiconductor module, a metal electrode 3 is bonded onto a first insulating substrate 2, a metal plate 11 for heat dissipation is bonded onto the metal electrode 3, and power semiconductor elements 4, 5 are bonded onto the metal plate 11 for heat dissipation. The power semiconductor elements 4, 5, the metal plate 11 for heat dissipation and the metal electrode 3 are contained in a resin package 6 with an insulation which is bonded, at the end thereof, to the first insulating substrate 2. The resin package 6 is encapsulated with insulating gel 7. Heat generated from the power semiconductor elements 4, 5 is dissipated by bringing the first insulating substrate 2 into pressure contact with a cooler. Heat dissipation can be enhanced by employing an enlarged conductor at a part of an external terminal for connection with the power semiconductor element 4, 5.

19. 发明专利

JP2013233042A Power semiconductor module, manufacturing method of the same, and semiconductor power conversion apparatus 审中-公开
标题翻译：功率半导体模块，其制造方法和半导体功率转换装置
公开(公告)号：JP2013233042A
公开(公告)日：2013-11-14
申请号：JP2012104132
申请日：2012-04-27
申请人： Toshiba Corp , 株式会社東芝
发明人： MARUNO KOJI , OBE TOSHIHARU
IPC分类号： H02M7/48 , H01L23/36 , H01L25/07 , H01L25/18
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a power semiconductor device which achieves high reliability while having low heat resistance.SOLUTION: A first insulation resin sheet 101 is adhered to an adhered surface at a viscosity close to the minimum melt viscosity. Next, a second insulation resin sheet 102 is placed on the first insulation resin sheet 101, and an assembled structure is placed on the second insulation resin sheet 102. Then, these components are pressurized to be adhered to each other. At that time, a size of the second insulation resin sheet 102 is set to a size which is substantially the same as an outer shape of the assembly structure or slightly protrudes from the assembly structure. Next, a potting resin is injected until first to fourth conductors are buried including the exposed insulation resin sheet and is heated thereby thermally hardening the potting resin, the first resin sheet, and the second resin sheet.
摘要翻译：要解决的问题：提供一种在具有低耐热性的同时实现高可靠性的功率半导体器件。解决方案：第一绝缘树脂片101以接近最小熔体粘度的粘度粘附到粘附表面。接下来，将第二绝缘树脂片102放置在第一绝缘树脂片101上，并且将组装结构放置在第二绝缘树脂片102上。然后，这些部件被加压以彼此粘附。此时，将第二绝缘树脂片102的尺寸设定为与组装结构的外形大致相同的尺寸或从组装结构稍微突出的尺寸。接下来，注入灌封树脂直到第一至第四导体被埋入，包括暴露的绝缘树脂片，并加热，从而使灌封树脂，第一树脂片和第二树脂片热硬化。

20. 发明专利

JP2008148530A Inverter apparatus 审中-公开
标题翻译：逆变器装置
公开(公告)号：JP2008148530A
公开(公告)日：2008-06-26
申请号：JP2006336027
申请日：2006-12-13
申请人： Toshiba Corp , 株式会社東芝
发明人： TADA NOBUMITSU , MORIKAWA RYUICHI , OBE TOSHIHARU
IPC分类号： H02M7/00
CPC分类号： H01G2/08 , H01G4/224 , H01G4/228
摘要： PROBLEM TO BE SOLVED: To provide an inverter apparatus that can reduce thermal resistance in a heat transmission route from a capacitor element to a cooler, and can reduce the size and enhance its reliability. SOLUTION: An inverter apparatus accommodates a capacitor module 1 including a DC smoothing circuit, and a power semiconductor module 2 including reverse conversion circuit by all-phase or one-phase of three-phase inverter or single-phase inverter in the same housing. The capacitor module includes a plurality of capacitor elements 7 that are connected to each other in parallel, positive and negative connection conductors 5, 6 having positive and negative terminals 5A, 6A for capacitors at one portion thereof, and heat transmission portions 5B, 6B at another one portion thereof, and a plurality of element pairs comprised of the positive and negative connection conductors and the plurality of capacitor elements. Further, it includes an electrically insulating heat dissipation plate 8 that comes in contact with the heat transmission portions of the connection conductors. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够降低从电容器元件到冷却器的热传递路径中的热阻的逆变器装置，并且可以减小尺寸并提高其可靠性。解决方案：逆变器装置容纳包括DC平滑电路的电容器模块1和具有相同或单相的三相逆变器或单相逆变器的逆变换电路的功率半导体模块2 住房。电容器模块包括并联连接的多个电容器元件7，在其一部分具有用于电容器的正极和负极端子5A，6A的正极和负极连接导体5,6，以及传热部分5B，6B 以及由正负连接导体和多个电容器元件构成的多个元件对。此外，它包括与连接导体的热传导部分接触的电绝缘散热板8。版权所有（C）2008，JPO＆INPIT

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