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    • 14. 发明专利
    • QUARTZ GLASS FOR OPTICS
    • JP2000007370A
    • 2000-01-11
    • JP16890098
    • 1998-06-16
    • TOSHIBA CERAMICS CO
    • TANIIKE SEIJISHINPO MASARUTANAKA MASAFUMITOKUTAKE FUMIO
    • C03C3/06
    • PROBLEM TO BE SOLVED: To obtain an optical quartz glass that suppresses the emission of fluorescence, even when a laser beam of short wavelength is used, and can draw sharp patterns, for example, on wafers by setting the concentration of Ni on the basis of the positive correlation with the intensity of the fluorescence. SOLUTION: A positive correlation between the concentration of Ni and the intensity of its fluorescence can be noticed clearly, when the correlation between the impurity elements in quartz glass and the fluorescent intensity is examined individually. When the concentration of Ni is in the range of from 0.1 ppb to 1.0 ppb, the emission of the fluorescence can be substantially inhibited, regardless of the existence of other elements and their concentrations. If it is in this range, the emission of fluorescence can be inhibited, even when the excimer laser is employed. This merit can be revealed at maximum, when these elements constituted with this optical quartz glass are applied to the optical lithography.
    • 15. 发明专利
    • DEVICE FOR EVAPORATING AND CONCENTRATING SAMPLE
    • JP2000002633A
    • 2000-01-07
    • JP16890198
    • 1998-06-16
    • TOSHIBA CERAMICS CO
    • TANAKA MASAFUMITOKUTAKE FUMIO
    • G01N1/36G01N1/28G01N33/00
    • PROBLEM TO BE SOLVED: To prevent a sample from being contaminated by metal impurities, and to quickly and uniformly perform concentration by detachably mounting a container body made of a highly pure synthetic resin to a substrate for maintaining an integrality, and by suppressing the thermal expansion of the container body. SOLUTION: The device 1 for evaporating and concentrating sample is composed of a container body 3 made of a synthetic resin where a plurality of sample accommodation parts 2 are formed, a substrate 4, and a heater 5 being provided on the substrate 4. When the sample is to be evaporated and concentrated, the heater 5 is accommodated into a heater shrinking groove 11 formed on the substrate 4, an engagement projection line 9 of the washed container body 3 is engaged and pushed to an engagement recessed groove 13 on the substrate 4, and the container body 3 is connected to the substrate 4, thus detachably maintaining them integrally, and at the same time allowing a rear surface 7 and a placement surface 4 to adhere each other. In this state, the sample is accommodated into the sample accommodation part 2, and is concentrated while heating due to the heater 5 is controlled. At this time, the container body 3 and the substrate 4 are strongly maintained integrally, thus suppressing deformation due to the thermal expansion of the container body 3 by the substrate 4.
    • 17. 发明专利
    • METHOD FOR MANUFACTURING ANALYZING SAMPLE FOR METAL IMPURITY CONTAINED IN SYNTHETIC RESIN, AND MEASURING METHOD OF METAL IMPURITY USING IT
    • JP2000292326A
    • 2000-10-20
    • JP9559199
    • 1999-04-01
    • TOSHIBA CERAMICS CO
    • TANAKA MASAFUMITAKAHASHI MASATO
    • G01N27/62G01N1/28G01N21/31G01N33/00
    • PROBLEM TO BE SOLVED: To provide an analyzing sample for metal impurity capable of precisely measuring the metal impurity content in a synthetic resin by adhering an acid droplet to a synthetic resin analyzing sample to extract a metal element, and evaporating and condensing the recovered droplet to perform quantitative determination. SOLUTION: An analyzing sample vessel 2 containing an analyzing sample S2 is arranged with a space so as not to make direct contact with a sample decomposing solution 3. Therefore, only the gas phase of the sample decomposing solution 3 evaporated by heating can touch the analyzing sample S2 to decompose the analyzing sample S2. Accordingly, by the synergistic effect of the sampling free from metal contamination of shaving by use of a silicon wafer having a small metal contamination degree and the analyzing sample treatment method of extracting an intended matter without metal contamination of the analyzing sample S2 by the gas phase of the evaporated sample decomposing solution 3, the analyzing sample S2 free from metal contamination can be manufactured. Further, a plurality of analyzing samples S2 manufactured by shaving the same part of a synthetic resin-made analyzing sample group (for example, physical and chemical apparatus) by use of a cut silicon wafer in the depth direction a plurality of times is analyzed, whereby a sample capable of precisely measuring the depth directional contamination degree of the analyzing sample group can be provided.