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11. 发明申请

US20100255430A1 SILICON-CONTAINING COMPOSITION FOR FINE PATTERN FORMATION AND METHOD FOR FINE PATTERN FORMATION USING THE SAME 失效
标题翻译：用于精细图案形成的含硅组合物及其使用的精细图案形成方法
公开(公告)号：US20100255430A1
公开(公告)日：2010-10-07
申请号：US12733451
申请日：2008-09-12
申请人： Ralph R. Dammel , Wen-Bing Kang , Yasuo Shimizu , Tomonori Ishikawa
发明人： Ralph R. Dammel , Wen-Bing Kang , Yasuo Shimizu , Tomonori Ishikawa
IPC分类号： G03F7/20 , C08L83/00
CPC分类号： H01L21/0273 , G03F7/0757 , G03F7/405
摘要： The present invention provides a composition for forming a fine pattern with high dry etching resistance and a method for forming the fine pattern. The composition for fine pattern formation containing: a resin containing a repeating unit having a silazane bond; and a solvent as well as a method for fine pattern formation using the same.
摘要翻译：本发明提供了一种用于形成具有高耐干蚀刻性的精细图案的组合物和形成精细图案的方法。精细图案形成用组合物，含有含有具有硅氮烷键的重复单元的树脂; 和溶剂以及使用其形成精细图案的方法。

12. 发明授权

US06737492B2 Radiation absorbing polymer, composition for radiation absorbing coating, radiation absorbing coating and application thereof as anti-reflective coating 有权
标题翻译：辐射吸收聚合物，用于辐射吸收涂层的组合物，辐射吸收涂层及其作为抗反射涂层的应用
公开(公告)号：US06737492B2
公开(公告)日：2004-05-18
申请号：US10229219
申请日：2002-08-27
申请人： Wen-Bing Kang , Munirathna Padmanaban , Hatsuyuki Tanaka , Ken Kimura , Takanori Kudo , Georg Pawlowski
发明人： Wen-Bing Kang , Munirathna Padmanaban , Hatsuyuki Tanaka , Ken Kimura , Takanori Kudo , Georg Pawlowski
IPC分类号： C08F11636
CPC分类号： C09D4/00 , C08F246/00 , G03F7/091 , C08F220/26 , C08F220/58 , C08F212/00
摘要： A radiation absorbing polymer having chemically bonded thereto a radiation absorbing dye, which has high absorption at a predetermined wavelength radiation, which shows good adhesion to a substrate and good thin film-forming, which has no dependence upon resists, which is soluble in a solvent for photoresists but becomes insoluble after being baked; a composition for radiation absorbing coating containing this polymer, and a radiation absorbing coating such as an anti-reflective coating formed from this composition are disclosed. The radiation absorbing polymer comprises a copolymer containing at least both a recurring unit composed of a monomer containing a keto group and a divalent group (preferably a methylene group) in its side chain and a recurring unit composed of a monomer containing an organic chromophore bonded directly or through a linkage group to the main chain. This radiation absorbing polymer is dissolved in a solvent such as alcohol, aromatic hydrocarbon, ketone, ester, etc., and the resulting solution is applied to a wafer and baked to form a radiation absorbing coating such as an anti-reflective coating. On this coating is coated, for example, a chemically amplified resist. This coated substrate is then exposed to deep UV rays and is developed to form a fine resist pattern excluding the influence of standing wave.
摘要翻译：一种辐射吸收聚合物，其化学键合有辐射吸收染料，该辐射吸收染料在预定波长辐射下具有高吸收性，其对基底具有良好的粘附性，并且与溶于溶剂的抗蚀剂无关的良好的薄膜形成用于光致抗蚀剂，但在烘烤后变得不溶; 公开了含有这种聚合物的辐射吸收涂层用组合物和由该组合物形成的抗反射涂层等吸收辐射涂层。辐射吸收聚合物包括共聚物，其至少包含由侧链中含有酮基和二价基团（优选亚甲基）的单体构成的重复单元，以及由含有直接键合的有机发色团的单体构成的重复单元或通过连接组到主链。将这种辐射吸收聚合物溶于醇，芳族烃，酮，酯等溶剂中，将所得溶液施加到晶片上并烘烤以形成抗辐射涂层等吸收辐射的涂层。在该涂层上涂覆例如化学放大抗蚀剂。然后将该涂覆的基材暴露于深紫外线，并显影以形成除了驻波的影响之外的精细抗蚀剂图案。

13. 发明授权

US06559473B1 Light-emitting diodes with hetero-PN-junction 失效
标题翻译：具有异质PN结的发光二极管
公开(公告)号：US06559473B1
公开(公告)日：2003-05-06
申请号：US08765681
申请日：1997-06-16
申请人： Nu Yu , Wen-Bing Kang , Akihiko Tokida
发明人： Nu Yu , Wen-Bing Kang , Akihiko Tokida
IPC分类号： H01L3524
CPC分类号： H01L51/5012 , H01L51/0035 , H01L51/0036 , H01L51/0038 , H01L51/005 , H01L51/0052 , H01L51/0053 , H01L51/0059 , H01L51/0062 , H01L51/007
摘要： An organic light-emitting diode with high luminance and high efficiency comprising an anode, an organic pn-junction and a cathode layered sequentially in this order, wherein the organic pn-junction emits light by an electric current passing through the diode in an electric field applied between the anode and the cathode, characterized in that the organic pn-junction is composed of an organic p-type luminescent-semiconductor thin film and an organic n-type luminescent-semiconductor thin film, wherein one surface of the organic p-type luminescent-semiconductor thin film is in contact with the anode and another surface of the organic p-type luminescent-semiconductor thin film is in contact with the organic n-type luminescent-semiconductor thin film, and one surface of the organic n-type luminescent-semiconductor thin film is in contact with the cathode and another surface of the organic n-type luminescent-semiconductor thin film is in contact with the organic p-type luminescent-semiconductor thin film and wherein the diode satisfies all the conditions of the following equations 1 to 3: X1≦X2 Equation 1: IP1≦IP2 Equation 2: −0.2 eV≦(IP2−IP1)−(X2−X1)≦0.2 eV Equation 3: in which X1 denotes an absolute value of the electron affinity of the organic p-type luminescent-semiconductor, X2 denotes an absolute value of the electron affinity of the organic n-luminescent-semiconductor, IP1 denotes an ionization potential of the organic p-type luminescent-semiconductor and IP2 denotes an ionization potential of the organic n-type luminescent-semiconductor.
摘要翻译：一种具有高亮度和高效率的有机发光二极管，其包括按顺序分层的阳极，有机pn结和阴极，其中有机pn结通过电场中通过二极管的电流发光施加在阳极和阴极之间，其特征在于有机pn结由有机p型发光半导体薄膜和有机n型发光半导体薄膜组成，其中有机p型结构的一个表面发光半导体薄膜与阳极接触，有机p型发光半导体薄膜的另一表面与有机n型发光半导体薄膜接触，有机n型发光半导体薄膜的一个表面半导体薄膜与阴极接触，有机n型发光半导体薄膜的另一表面与有机p型发光半导体接触并且其中二极管满足以下等式1至3的所有条件：其中X1表示有机p型发光半导体的电子亲和力的绝对值，X2表示电子亲和力的绝对值有机n型发光半导体，IP1表示有机p型发光半导体的电离电位，IP2表示有机n型发光半导体的电离电位。

14. 发明授权

US06468718B1 Radiation absorbing polymer, composition for radiation absorbing coating, radiation absorbing coating and application thereof as anti-reflective coating 有权
标题翻译：辐射吸收聚合物，用于辐射吸收涂层的组合物，辐射吸收涂层及其作为抗反射涂层的应用
公开(公告)号：US06468718B1
公开(公告)日：2002-10-22
申请号：US09244358
申请日：1999-02-04
申请人： Wen-Bing Kang , Munirathna Padmanaban , Hatsuyuki Tanaka , Ken Kimura , Takanori Kudo , Georg Pawlowski
发明人： Wen-Bing Kang , Munirathna Padmanaban , Hatsuyuki Tanaka , Ken Kimura , Takanori Kudo , Georg Pawlowski
IPC分类号： G03C173
CPC分类号： C09D4/00 , C08F246/00 , G03F7/091 , C08F220/26 , C08F220/58 , C08F212/00
摘要： A radiation absorbing polymer having chemically bonded thereto a radiation absorbing dye, which has high absorption at a predetermined wavelength radiation, which shows good adhesion to a substrate and good thin film-forming, which has no dependence upon resists, which is soluble in a solvent for photoresists but becomes insoluble after being baked; a composition for radiation absorbing coating containing this polymer, and a radiation absorbing coating such as an anti-reflective coating formed from this composition are disclosed. The radiation absorbing polymer comprises a copolymer containing at least both a recurring unit composed of a monomer containing a keto group and a divalent group (preferably a methylene group) in its side chain and a recurring unit composed of a monomer containing an organic chromophore bonded directly or through a linkage group to the main chain. This radiation absorbing polymer is dissolved in a solvent such as alcohol, aromatic hydrocarbon, ketone, ester, etc., and the resulting solution is applied to a wafer and baked to form a radiation absorbing coating such as an anti-reflective coating. On this coating is coated, for example, a chemically amplified resist. This coated substrate is then exposed to deep UV rays and is developed to form a fine resist pattern excluding the influence of standing wave.
摘要翻译：一种辐射吸收聚合物，其化学键合有辐射吸收染料，该辐射吸收染料在预定波长辐射下具有高吸收性，其对基底具有良好的粘附性，并且与溶于溶剂的抗蚀剂无关的良好的薄膜形成用于光致抗蚀剂，但在烘烤后变得不溶; 公开了含有这种聚合物的辐射吸收涂层用组合物和由该组合物形成的抗反射涂层等吸收辐射涂层。辐射吸收聚合物包括共聚物，其至少包含由侧链中含有酮基和二价基团（优选亚甲基）的单体构成的重复单元，以及由含有直接键合的有机发色团的单体构成的重复单元或通过连接组到主链。将这种辐射吸收聚合物溶于醇，芳族烃，酮，酯等溶剂中，将所得溶液施加到晶片上并烘烤以形成抗辐射涂层等吸收辐射的涂层。在该涂层上涂覆例如化学放大抗蚀剂。然后将该涂覆的基材暴露于深紫外线，并显影以形成除了驻波的影响之外的精细抗蚀剂图案。

15. 发明授权

US06465161B1 Method for forming resist pattern 失效
标题翻译：形成抗蚀剂图案的方法
公开(公告)号：US06465161B1
公开(公告)日：2002-10-15
申请号：US09600612
申请日：2000-07-17
申请人： Wen-Bing Kang , Shoko Matsuo , Ken Kimura , Yoshinori Nishiwaki , Hatsuyuki Tanaka
发明人： Wen-Bing Kang , Shoko Matsuo , Ken Kimura , Yoshinori Nishiwaki , Hatsuyuki Tanaka
IPC分类号： G03F700
CPC分类号： G03F7/16 , G03F7/0045 , G03F7/091
摘要： In a process for manufacturing integrated circuit elements or the like by photolithography, a method for reducing detrimental influence on resist shape due to properties of a substrate or acidity of substrate surface in case where a chemically amplified resist or the like is used as a photoresist, and a substrate-treating agent composition to be used for this method are described. The substrate-treating agent composition comprises a solution containing a salt between at least one basic compound selected from among primary, secondary and tertiary amines and nitrogen-containing heterocyclic compounds and an organic acid such as a sulfonic acid or a carboxylic acid. This composition is coated on a substrate surface having thereon a bottom anti-reflective coating such as SiON layer, baked and, if necessary washed, then a chemically amplified resist is coated on the thus-treated substrate, exposed and developed to form a resist pattern on the substrate.
摘要翻译：在通过光刻制造集成电路元件等的方法中，使用化学放大型抗蚀剂等作为光致抗蚀剂的情况下，由于基板性质或基板表面的酸度降低对抗蚀剂形状的有害影响的方法，并描述用于该方法的底物处理剂组合物。底物处理剂组合物包含含有至少一种选自伯胺，仲胺和叔胺的碱性化合物和含氮杂环化合物之间的盐和有机酸如磺酸或羧酸的溶液。将该组合物涂布在其上具有诸如SiON层的底部抗反射涂层的基底表面上，烘烤并且如果需要洗涤，然后将化学放大的抗蚀剂涂覆在如此处理的基底上，暴露并显影以形成抗蚀剂图案在基板上。

16. 发明授权

US06329117B1 Antireflection or light-absorbing coating composition and polymer therefor 有权
标题翻译：防反射或光吸收涂料组合物及其聚合物
公开(公告)号：US06329117B1
公开(公告)日：2001-12-11
申请号：US09319129
申请日：1999-08-09
申请人： Munirathna Padmanaban , Wen-Bing Kang , Georg Pawlowski , Ken Kimura , Hatsuyuki Tanaka
发明人： Munirathna Padmanaban , Wen-Bing Kang , Georg Pawlowski , Ken Kimura , Hatsuyuki Tanaka
IPC分类号： G03C173
CPC分类号： G03F7/091 , Y10S430/106 , Y10S430/107 , Y10S430/108 , Y10S430/111
摘要： A composition for an anti-reflective coating or a light absorbing coating, which shows good light absorption for lights of 100-450 nm in wavelength, suffers neither footing nor intermixing, and has excellent storage stability and step coverage, and novel copolymers to be used therein. The novel polymers comprise acrylic or methacrylic copolymers or terpolymers, at least having both recurring units (1) wherein an amino group- or hydroxyl-group containing organic chromophore capable of absorbing lights of 100 to 450 nm in wavelength is chemically bound to the carbonyl group bound to a carbon atom in the main chain, directly or through —R1NHCXY— (wherein R1 represents an alkylene group, X represents O or S, Y represents O or NR6, R6 represents H, a substituted or non-substituted, straight chain or cyclic alkyl group or a phenylene group) and for example recurring units (2) wherein a double bond-or epoxy group-containing alkyl group is chemically bound to the carboxyl or oxygen group bound to a carbon atom in the main chain. The composition containing the copolymer is coated on a wafer to form a bottom anti-reflective coating and, after coating thereon a photoresist, deep UV exposure and development are conducted to form a resist image with high resolution.
摘要翻译：用于抗反射涂层或光吸收涂层的组合物对于波长为100-450nm的光显示出良好的光吸收，既不起脚也不混合，并且具有优异的储存稳定性和阶梯覆盖率，以及要使用的新型共聚物其中。该新型聚合物包含至少具有两个重复单元（1）的丙烯酸或甲基丙烯酸共聚物或三元共聚物，其中能够吸收波长为100至450nm的光的含氨基或羟基的有机发色团与羰基化学键合直接或通过-R1NHCXY-（其中R1表示亚烷基，X表示O或S，Y表示O或NR6，R6表示H，取代或未取代的直链或未取代的直链或环状烷基或亚苯基），例如其中双键或含环氧基的烷基与与主链中的碳原子结合的羧基或氧基化学键合的重复单元（2）。将包含共聚物的组合物涂覆在晶片上以形成底部抗反射涂层，并且在其上涂覆光致抗蚀剂之后，进行深紫外线曝光和显影以形成具有高分辨率的抗蚀剂图像。

17. 发明授权

US06277750B1 Composition for bottom reflection preventive film and novel polymeric dye for use in the same 失效
标题翻译：用于底部防反射膜的组合物和用于其的新型聚合物染料
公开(公告)号：US06277750B1
公开(公告)日：2001-08-21
申请号：US09508624
申请日：2000-06-27
申请人： Georg Pawlowski , Munirathna Padmanaban , Wen-Bing Kang , Hatsuyuki Tanaka , Ken Kimura , Yoshinori Nishiwaki
发明人： Georg Pawlowski , Munirathna Padmanaban , Wen-Bing Kang , Hatsuyuki Tanaka , Ken Kimura , Yoshinori Nishiwaki
IPC分类号： H01L2100
CPC分类号： G03F7/091 , C08F8/28 , C08F2800/10 , G03F7/0382 , G03F7/0392 , C08F8/48 , C08F16/06
摘要： As a bottom anti-reflective coating material for use in photolithography, polymer dyes represented by following general formula are used. The polymer dyes are able to form a bottom anti-reflective coating having good film formation properties, good absorption properties at exposure wavelength, good step coverage, non-intermixing with photoresist and high etch rate. wherein R represents H or a substituted or non-substituted alkyl, cycloalkyl, or aryl group, R1 represents a substituted or non-substituted alkyl or aryl, or a —COOR3 group in which R3 represents an alkyl group, R2 represents a substituted or non-substituted alkyl, cycloalkyl, or aryl group, D is an organic chromophore which absorbs at the exposure wavelength (150-450 nm) and represents a substituted or non-substituted aryl, condensed aryl, or heteroaryl group, m and o are any integer above zero, and n, p and q are any integer including zero.
摘要翻译：作为用于光刻的底部抗反射涂层材料，使用由以下通式表示的聚合物染料。聚合物染料能够形成底部抗反射涂层，其具有良好的成膜性能，在曝光波长下具有良好的吸收性能，良好的步骤覆盖率，与光致抗蚀剂的非混合和高蚀刻速率。其中R表示H或取代或未取代的烷基，环烷基或芳基，R 1表示取代或未取代的烷基或芳基或其中R 3表示烷基的-COOR 3基团，R 2表示取代或未取代的烷基，环烷基或芳基，D 是在曝光波长（150-450nm）下吸收并表示取代或未取代的芳基，缩合芳基或杂芳基的有机发色团，m和o是大于零的任何整数，n，p和q是任何整数包括零。

18. 发明授权

US5871854A Organic electroluminescent device 失效
标题翻译：有机电致发光器件
公开(公告)号：US5871854A
公开(公告)日：1999-02-16
申请号：US776226
申请日：1997-03-10
申请人： Akihiko Tokida , Wen-Bing Kang , Nu Yu , Thomas Potrawa , Andreas Winterfeldt
发明人： Akihiko Tokida , Wen-Bing Kang , Nu Yu , Thomas Potrawa , Andreas Winterfeldt
IPC分类号： C08L65/00 , C09K11/06 , H01L33/26 , H01L51/50 , H05B33/12 , H05B33/14 , H05B33/26 , H05B33/00
CPC分类号： C09K11/06 , H05B33/14 , Y10S428/917
摘要： An organic electroluminescence device comprising an anode, an organic hole transport layer, an organic emission layer and a cathode layered in this order on a substrate, or, optionally, comprising an additional electron transport layer between the organic emission layer and the cathode, wherein the organic emission layer comprises a benzoxazinone derivative represented by formula (1), wherein R.sup.1 is a specific acyl group or sulfonyl group, and R.sup.2 and R.sup.3 are specific substituents.
摘要翻译： PCT No.PCT / EP95 / 03127 371日期1997年3月10日 102（e）1997年3月10日PCT PCT 1995年8月7日PCT公布。公开号WO96 / 05266 日期1996年2月22日在有机电致发光器件中，包括阳极，有机空穴传输层，有机发射层和阴极依次层叠在衬底上，或者可选地包括在有机发光层和阴极，其中所述有机发射层包含由式（1）表示的苯并恶嗪酮衍生物，其中R 1是特定酰基或磺酰基，并且R 2和R 3是特定取代基。

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