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11. 发明授权

US07456107B2 Compositions and methods for CMP of low-k-dielectric materials 有权
标题翻译：低k电介质材料CMP的组成和方法
公开(公告)号：US07456107B2
公开(公告)日：2008-11-25
申请号：US11595536
申请日：2006-11-09
申请人： Jason Keleher , Daniel Woodland , Francesco De Rege Thesauro , Robert Medsker , Jason Aggio
发明人： Jason Keleher , Daniel Woodland , Francesco De Rege Thesauro , Robert Medsker , Jason Aggio
IPC分类号： H01L21/302
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/31053
摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing low-k dielectric materials. The composition comprises a particulate abrasive material, at least one silicone-free nonionic surfactant comprising a hydrophilic portion and a lipophilic portion, at least one silicone-containing nonionic surfactant comprising a hydrophilic portion and a lipophilic portion, and an aqueous carrier therefor. A CMP method for polishing a low-k dielectric surface utilizing the composition is also disclosed.
摘要翻译：本发明提供适用于抛光低k电介质材料的化学机械抛光（CMP）组合物。所述组合物包含颗粒磨料，至少一种含有亲水部分和亲油部分的无硅氧烷非离子表面活性剂，至少一种含有亲水部分和亲油部分的含硅氧烷的非离子表面活性剂及其水性载体。还公开了利用该组合物来研磨低k电介质表面的CMP方法。

12. 发明申请

US20080203059A1 DILUTABLE CMP COMPOSITION CONTAINING A SURFACTANT 审中-公开
标题翻译：包含表面活性剂的可稀释的CMP组合物
公开(公告)号：US20080203059A1
公开(公告)日：2008-08-28
申请号：US11679273
申请日：2007-02-27
申请人： Francesco De Rege Thesauro , Jason Keleher
发明人： Francesco De Rege Thesauro , Jason Keleher
IPC分类号： B44C1/22
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463 , H01L21/31053
摘要： The inventive polishing composition comprises an abrasive, an aqueous medium, a surfactant in an amount above its critical micelle concentration, and a hydrophobic surface active compound. The invention also provides a method of using a polishing composition.
摘要翻译：本发明抛光组合物包含研磨剂，水性介质，高于其临界胶束浓度的表面活性剂和疏水表面活性化合物。本发明还提供了使用抛光组合物的方法。

13. 发明申请

US20060076317A1 CMP composition with a polymer additive for polishing noble metals 有权
公开(公告)号：US20060076317A1
公开(公告)日：2006-04-13
申请号：US10963108
申请日：2004-10-12
申请人： Francesco De Rege Thesauro , Benjamin Bayer
发明人： Francesco De Rege Thesauro , Benjamin Bayer
IPC分类号： C03C15/00 , H01L21/302 , B44C1/22
CPC分类号： C09G1/02 , H01L21/3212 , H01L28/65
摘要： The invention provides a method of polishing a substrate comprising contacting a substrate comprising a noble metal on a surface of the substrate with a chemical-mechanical polishing system comprising (a) a polishing component selected from the group consisting of an abrasive, a polishing pad, and a combination thereof, (b) an oxidizing agent, (c) an ethylene-oxide containing polymer, and (d) a liquid carrier, and abrading at least a portion of the noble metal with the chemical-mechanical polishing system to polish the substrate.

14. 发明授权

US08247327B2 Methods and compositions for polishing silicon-containing substrates 有权
标题翻译：抛光含硅基材的方法和组合物
公开(公告)号：US08247327B2
公开(公告)日：2012-08-21
申请号：US12221023
申请日：2008-07-30
申请人： Francesco De Rege Thesauro , Zhan Chen
发明人： Francesco De Rege Thesauro , Zhan Chen
IPC分类号： H01L21/302
CPC分类号： C09K3/1463 , B24B37/044 , C09G1/02 , H01L21/31053 , H01L21/3212
摘要： The invention provides chemical-mechanical polishing (CMP) compositions and methods for polishing a silicon-containing substrate. A method of the invention comprises the steps of contacting a silicon-containing substrate with a polishing pad and an aqueous CMP composition, and causing relative motion between the polishing pad and the substrate while maintaining a portion of the CMP composition in contact with the surface of the substrate to abrade at least a portion of the substrate. The CMP composition comprises a ceria abrasive, a polishing additive bearing a functional group with a pKa of about 4 to about 9, a nonionic surfactant with an hydrophilic portion and a lipophilic portion wherein the hydrophilic portion has a number average molecular weight of about 500 g/mol or higher, and an aqueous carrier, wherein the pH of the composition is 7 or less. The method reduces defects on the wafers, particularly local areas of high removal. The method is also useful for polishing dielectric silicon-containing substrates at a high rate relative to semiconductor silicon-containing substrates.
摘要翻译：本发明提供用于抛光含硅基材的化学机械抛光（CMP）组合物和方法。本发明的方法包括以下步骤：使含硅衬底与抛光垫和水性CMP组合物接触，并且在保持CMP组合物的一部分与表面接触的同时引起抛光垫和衬底之间的相对运动所述衬底磨损所述衬底的至少一部分。 CMP组合物包括二氧化铈研磨剂，具有pKa约4至约9的官能团的抛光添加剂，具有亲水部分和亲油部分的非离子表面活性剂，其中亲水部分的数均分子量为约500g / mol以上，和水性载体，其中组合物的pH为7以下。该方法减少了晶片上的缺陷，特别是高去除的局部区域。该方法对于相对于含半导体硅的衬底以高速率抛光介电含硅衬底也是有用的。

15. 发明授权

US07316603B2 Compositions and methods for tantalum CMP 有权
标题翻译：钽CMP的组成和方法
公开(公告)号：US07316603B2
公开(公告)日：2008-01-08
申请号：US11235765
申请日：2005-09-26
申请人： Phillip W. Carter , Jian Zhang , Steven K. Grumbine , Francesco De Rege Thesauro
发明人： Phillip W. Carter , Jian Zhang , Steven K. Grumbine , Francesco De Rege Thesauro
IPC分类号： C09K3/14 , C09K13/06 , B24B1/00
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02 , C09K3/1463 , C23F3/04 , C23F3/06
摘要： A composition suitable for tantalum chemical-mechanical polishing (CMP) comprises an abrasive, an organic oxidizer, and a liquid carrier therefor. The organic oxidizer has a standard redox potential (E0) of not more than about 0.5 V relative to a standard hydrogen electrode. The oxidized form comprises at least one pi-conjugated ring, which includes at least one heteroatom directly attached to the ring. The heteroatom can be a N, O, S or a combination thereof. In a method embodiment, a CMP composition comprising an abrasive, and organic oxidizer having an E0 of not more than about 0.7 V relative to a standard hydrogen electrode, and a liquid carrier therefor, is utilized to polish a tantalum-containing surface of a substrate, by abrading the surface of the substrate with the composition, preferably with the aid of a polishing pad.
摘要翻译：适用于钽化学机械抛光（CMP）的组合物包括研磨剂，有机氧化剂和用于其的液体载体。有机氧化剂相对于标准氢电极具有不超过约0.5V的标准氧化还原电位（E 0 SUP 0）。氧化形式包含至少一个π-共轭环，其包括至少一个直接连接在环上的杂原子。杂原子可以是N，O，S或它们的组合。在方法实施方案中，使用包含磨料和相对于标准氢电极不超过约0.7V的E 0有机氧化剂的CMP组合物及其液体载体来抛光通过用组合物研磨基底的表面，优选借助于抛光垫，将基底的含钽表面。

16. 发明授权

US07288021B2 Chemical-mechanical polishing of metals in an oxidized form 有权
标题翻译：化学机械抛光氧化形式的金属
公开(公告)号：US07288021B2
公开(公告)日：2007-10-30
申请号：US10753138
申请日：2004-01-07
申请人： Francesco De Rege Thesauro , Vlasta Brusic , Benjamin P. Bayer
发明人： Francesco De Rege Thesauro , Vlasta Brusic , Benjamin P. Bayer
IPC分类号： B24B1/00 , B24B7/19 , B24B7/30 , B24C1/00
CPC分类号： H01L21/3212
摘要： The invention provides a method for polishing a substrate comprising a metal in an oxidized form, the method comprising the steps of: (a) providing a substrate comprising a metal in an oxidized form, (b) contacting a portion of the substrate with a chemical-mechanical polishing system comprising: (i) a polishing component, (ii) a reducing agent, and (iii) a liquid carrier, and (c) abrading at least a portion of the metal in an oxidized form to polish the substrate. The reducing agent can be selected from the group consisting of 3-hydroxy-4-pyrones, α-hydroxy-γ-butyrolactones, ascorbic acid, borane, borohydrides, dialkylamine boranes, formaldehyde, formic acid, hydrogen, hydroquinones, hydroxylamine, hypophosphorous acid, phosphorous acid, a metal or metal ions in an oxidation state having a standard redox potential that is less than the standard redox potential of the metal in an oxidized form, trihydroxybenzenes, solvated electrons, sulfurous acid, salts thereof, and mixtures thereof.
摘要翻译：本发明提供了一种用于抛光包含氧化形式的金属的衬底的方法，所述方法包括以下步骤：（a）提供包含氧化形式的金属的衬底，（b）将衬底的一部分与化学 - 机械抛光系统，包括：（i）抛光组分，（ii）还原剂和（iii）液体载体，和（c）研磨至少一部分氧化形式的金属以抛光所述基材。还原剂可以选自3-羟基-4-吡咯烷酮，α-羟基-γ-丁内酯，抗坏血酸，硼烷，硼氢化物，二烷基胺硼烷，甲醛，甲酸，氢，氢醌，羟胺，次磷酸亚磷酸，氧化态的金属或金属离子具有小于氧化形式的金属的标准氧化还原电位，三羟基苯，溶剂化电子，亚硫酸，其盐及其混合物的标准氧化还原电位。

17. 发明申请

US20060024967A1 Polishing composition for noble metals 有权
标题翻译：贵金属抛光组合物
公开(公告)号：US20060024967A1
公开(公告)日：2006-02-02
申请号：US10901420
申请日：2004-07-28
申请人： Francesco De Rege Thesauro , Vlasta Brusic , Christopher Thompson , Benjamin Bayer
发明人： Francesco De Rege Thesauro , Vlasta Brusic , Christopher Thompson , Benjamin Bayer
IPC分类号： H01L21/461
CPC分类号： C09G1/02 , C23F3/00 , H01L21/3212 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a polishing composition and a method of chemically-mechanically polishing a substrate comprising a noble metal, the polishing composition comprising (a) an oxidizing agent that oxidizes a noble metal, (b) an anion selected from the group consisting of sulfate, borate, nitrate, and phosphate, and (c) a liquid carrier. The invention further provides a polishing composition and a method of chemically-mechanically polishing a substrate comprising ruthenium, the polishing composition comprising (a) an oxidizing agent that oxidizes ruthenium above the +4 oxidation state, (b) a polishing additive selected from the group consisting of metal sequestering polymers, metal chelators, organic thiols, compounds that reduce ruthenium tetraoxide, lactones, and α-hydroxycarbonyl compounds.
摘要翻译：本发明提供一种抛光组合物和一种化学机械抛光包含贵金属的基材的方法，所述抛光组合物包含（a）氧化贵金属的氧化剂，（b）选自硫酸盐，硼酸盐，硝酸盐和磷酸盐，和（c）液体载体。本发明还提供一种抛光组合物和一种化学机械抛光包含钌的基材的方法，该抛光组合物包含（a）氧化高于+4氧化态的钌的氧化剂，（b）选自下组的抛光添加剂：由金属螯合聚合物，金属螯合剂，有机硫醇，还原四氧化钌的化合物，内酯和α-羟基羰基化合物组成。

18. 发明申请

US20050148290A1 Chemical-mechanical polishing of metals in an oxidized form 有权
标题翻译：化学机械抛光氧化形式的金属
公开(公告)号：US20050148290A1
公开(公告)日：2005-07-07
申请号：US10753138
申请日：2004-01-07
申请人： Francesco De Rege Thesauro , Vlasta Brusic , Benjamin Bayer
发明人： Francesco De Rege Thesauro , Vlasta Brusic , Benjamin Bayer
IPC分类号： C09G1/02 , H01L21/321 , H01L21/768 , B24B1/00
CPC分类号： H01L21/3212
摘要： The invention provides a method for polishing a substrate comprising a metal in an oxidized form, the method comprising the steps of: (a) providing a substrate comprising a metal in an oxidized form, (b) contacting a portion of the substrate with a chemical-mechanical polishing system comprising: (i) a polishing component, (ii) a reducing agent, and (iii) a liquid carrier, and (c) abrading at least a portion of the metal in an oxidized form to polish the substrate. The reducing agent can be selected from the group consisting of 3-hydroxy-4-pyrones, α-hydroxy-γ-butyrolactones, ascorbic acid, borane, borohydrides, dialkylamine boranes, formaldehyde, formic acid, hydrogen, hydroquinones, hydroxylamine, hypophosphorous acid, phosphorous acid, a metal or metal ions in an oxidation state having a standard redox potential that is less than the standard redox potential of the metal in an oxidized form, trihydroxybenzenes, solvated electrons, sulfurous acid, salts thereof, and mixtures thereof.
摘要翻译：本发明提供了一种用于抛光包含氧化形式的金属的衬底的方法，所述方法包括以下步骤：（a）提供包含氧化形式的金属的衬底，（b）将衬底的一部分与化学 - 机械抛光系统，包括：（i）抛光组分，（ii）还原剂和（iii）液体载体，和（c）研磨至少一部分氧化形式的金属以抛光所述基材。还原剂可以选自3-羟基-4-吡咯烷酮，α-羟基-γ-丁内酯，抗坏血酸，硼烷，硼氢化物，二烷基胺硼烷，甲醛，甲酸，氢，氢醌，羟胺，次磷酸亚磷酸，氧化态的金属或金属离子具有小于氧化形式的金属的标准氧化还原电位，三羟基苯，溶剂化电子，亚硫酸，其盐及其混合物的标准氧化还原电位。

19. 发明授权

US08597540B2 Compositions for polishing silicon-containing substrates 有权
标题翻译：用于抛光含硅基材的组合物
公开(公告)号：US08597540B2
公开(公告)日：2013-12-03
申请号：US13554829
申请日：2012-07-20
申请人： Francesco De Rege Thesauro , Zhan Chen
发明人： Francesco De Rege Thesauro , Zhan Chen
IPC分类号： C09K13/06
CPC分类号： C09K3/1463 , B24B37/044 , C09G1/02 , H01L21/31053 , H01L21/3212
摘要： The invention provides chemical-mechanical polishing (CMP) compositions and methods for polishing a silicon-containing substrate. A method of the invention comprises the steps of contacting a silicon-containing substrate with a polishing pad and an aqueous CMP composition, and causing relative motion between the polishing pad and the substrate while maintaining a portion of the CMP composition in contact with the surface of the substrate to abrade at least a portion of the substrate. The CMP composition comprises a ceria abrasive, a polishing additive bearing a functional group with a pKa of about 4 to about 9, a nonionic surfactant with an hydrophilic portion and a lipophilic portion wherein the hydrophilic portion has a number average molecular weight of about 500 g/mol or higher, and an aqueous carrier, wherein the pH of the composition is 7 or less. The method reduces defects on the wafers, particularly local areas of high removal. The method is also useful for polishing dielectric silicon-containing substrates at a high rate relative to semiconductor silicon-containing substrates.
摘要翻译：本发明提供用于抛光含硅基材的化学机械抛光（CMP）组合物和方法。本发明的方法包括以下步骤：使含硅衬底与抛光垫和水性CMP组合物接触，并且在保持CMP组合物的一部分与表面接触的同时引起抛光垫和衬底之间的相对运动所述衬底磨损所述衬底的至少一部分。 CMP组合物包括二氧化铈研磨剂，具有pKa约4至约9的官能团的抛光添加剂，具有亲水部分和亲油部分的非离子表面活性剂，其中亲水部分的数均分子量为约500g / mol以上，和水性载体，其中组合物的pH为7以下。该方法减少了晶片上的缺陷，特别是高去除的局部区域。该方法对于相对于含半导体硅的衬底以高速率抛光介电含硅衬底也是有用的。

20. 发明申请

US20110247996A1 DILUTABLE CMP COMPOSITION CONTAINING A SURFACTANT 审中-公开
标题翻译：包含表面活性剂的可稀释的CMP组合物
公开(公告)号：US20110247996A1
公开(公告)日：2011-10-13
申请号：US13167467
申请日：2011-06-23
申请人： Francesco De Rege Thesauro , Jason Keleher
发明人： Francesco De Rege Thesauro , Jason Keleher
IPC分类号： C23F1/00 , C23F1/14 , B24B1/00 , C09G1/02 , C09G1/04
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463 , H01L21/31053
摘要： The inventive polishing composition comprises an abrasive, an aqueous medium, a surfactant in an amount above its critical micelle concentration, and a hydrophobic surface active compound. The invention also provides a method of using a polishing composition.
摘要翻译：本发明抛光组合物包含研磨剂，水性介质，高于其临界胶束浓度的表面活性剂和疏水表面活性化合物。本发明还提供了使用抛光组合物的方法。

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