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1. 发明申请

US20080111101A1 Compositions and methods for CMP of low-k-dielectric materials 有权
公开(公告)号：US20080111101A1
公开(公告)日：2008-05-15
申请号：US11595536
申请日：2006-11-09
申请人： Jason Keleher , Daniel Woodland , Francesco De Rege Thesauro , Robert Medsker , Jason Aggio
发明人： Jason Keleher , Daniel Woodland , Francesco De Rege Thesauro , Robert Medsker , Jason Aggio
IPC分类号： C09K13/00
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/31053
摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing low-k dielectric materials. The composition comprises a particulate abrasive material, at least one silicone-free nonionic surfactant comprising a hydrophilic portion and a lipophilic portion, at least one silicone-containing nonionic surfactant comprising a hydrophilic portion and a lipophilic portion, and an aqueous carrier therefor. A CMP method for polishing a low-k dielectric surface utilizing the composition is also disclosed.

2. 发明授权

US07456107B2 Compositions and methods for CMP of low-k-dielectric materials 有权
标题翻译：低k电介质材料CMP的组成和方法
公开(公告)号：US07456107B2
公开(公告)日：2008-11-25
申请号：US11595536
申请日：2006-11-09
申请人： Jason Keleher , Daniel Woodland , Francesco De Rege Thesauro , Robert Medsker , Jason Aggio
发明人： Jason Keleher , Daniel Woodland , Francesco De Rege Thesauro , Robert Medsker , Jason Aggio
IPC分类号： H01L21/302
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/31053
摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing low-k dielectric materials. The composition comprises a particulate abrasive material, at least one silicone-free nonionic surfactant comprising a hydrophilic portion and a lipophilic portion, at least one silicone-containing nonionic surfactant comprising a hydrophilic portion and a lipophilic portion, and an aqueous carrier therefor. A CMP method for polishing a low-k dielectric surface utilizing the composition is also disclosed.
摘要翻译：本发明提供适用于抛光低k电介质材料的化学机械抛光（CMP）组合物。所述组合物包含颗粒磨料，至少一种含有亲水部分和亲油部分的无硅氧烷非离子表面活性剂，至少一种含有亲水部分和亲油部分的含硅氧烷的非离子表面活性剂及其水性载体。还公开了利用该组合物来研磨低k电介质表面的CMP方法。

3. 发明申请

US20110247996A1 DILUTABLE CMP COMPOSITION CONTAINING A SURFACTANT 审中-公开
标题翻译：包含表面活性剂的可稀释的CMP组合物
公开(公告)号：US20110247996A1
公开(公告)日：2011-10-13
申请号：US13167467
申请日：2011-06-23
申请人： Francesco De Rege Thesauro , Jason Keleher
发明人： Francesco De Rege Thesauro , Jason Keleher
IPC分类号： C23F1/00 , C23F1/14 , B24B1/00 , C09G1/02 , C09G1/04
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463 , H01L21/31053
摘要： The inventive polishing composition comprises an abrasive, an aqueous medium, a surfactant in an amount above its critical micelle concentration, and a hydrophobic surface active compound. The invention also provides a method of using a polishing composition.
摘要翻译：本发明抛光组合物包含研磨剂，水性介质，高于其临界胶束浓度的表面活性剂和疏水表面活性化合物。本发明还提供了使用抛光组合物的方法。

4. 发明申请

US20080203059A1 DILUTABLE CMP COMPOSITION CONTAINING A SURFACTANT 审中-公开
标题翻译：包含表面活性剂的可稀释的CMP组合物
公开(公告)号：US20080203059A1
公开(公告)日：2008-08-28
申请号：US11679273
申请日：2007-02-27
申请人： Francesco De Rege Thesauro , Jason Keleher
发明人： Francesco De Rege Thesauro , Jason Keleher
IPC分类号： B44C1/22
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463 , H01L21/31053
摘要： The inventive polishing composition comprises an abrasive, an aqueous medium, a surfactant in an amount above its critical micelle concentration, and a hydrophobic surface active compound. The invention also provides a method of using a polishing composition.
摘要翻译：本发明抛光组合物包含研磨剂，水性介质，高于其临界胶束浓度的表面活性剂和疏水表面活性化合物。本发明还提供了使用抛光组合物的方法。

5. 发明申请

US20080034670A1 CHEMICALLY MODIFIED CHEMICAL MECHANICAL POLISHING PAD 审中-公开
标题翻译：化学改性化学机械抛光垫
公开(公告)号：US20080034670A1
公开(公告)日：2008-02-14
申请号：US11841213
申请日：2007-08-20
申请人： Yuzhuo Li , Stuart Hellring , Jason Keleher , Tianxi Zhang
发明人： Yuzhuo Li , Stuart Hellring , Jason Keleher , Tianxi Zhang
IPC分类号： C09K3/14
CPC分类号： H01L21/3212 , B24B37/042 , B24B37/24 , B24D3/346 , B24D13/12
摘要： A method of CMP of a substrate surface includes providing a polishing pad having a polishing layer, that may be substantially free of abrasive particles, with a functional group chemically bonded (covalent or ionic) to the polishing layer. The functional group acts as an activator or catalyst for a compound of a polishing slurry to exhibit a higher material removal rate for removing selected portions of the surface of the substrate than exhibited in CMP of a substantially identical substrate in the presence of a substantially identical polishing slurry and a polishing pad wherein the substantially identical polishing layer does not have the functional group. The functional group may be derived from a compound comprising a polyamine, a polyelectrolyte, and/or an amino acid. A method of making the CMP pad and the CMP pad formed thereby is also disclosed.
摘要翻译：衬底表面的CMP的方法包括提供具有抛光层的抛光垫，抛光层可以基本上没有磨料颗粒，与抛光层化学键合（共价或离子）的官能团。官能团用作抛光浆料化合物的活化剂或催化剂，以在基本上相同的抛光剂存在下，显示更高的材料去除速率，以除去基材表面的选定部分，基本相同的基材CMP 浆料和抛光垫，其中基本相同的抛光层不具有官能团。官能团可以衍生自包含多胺，聚电解质和/或氨基酸的化合物。还公开了一种制造由此形成的CMP焊盘和CMP焊盘的方法。

6. 发明授权

US06660639B2 Method of fabricating a copper damascene structure 有权
标题翻译：铜镶嵌结构的制作方法
公开(公告)号：US06660639B2
公开(公告)日：2003-12-09
申请号：US10266169
申请日：2002-10-07
申请人： Yuzhuo Li , Jason Keleher
发明人： Yuzhuo Li , Jason Keleher
IPC分类号： H01L21302
CPC分类号： C09G1/02 , C23F3/00
摘要： The present invention provides a method of removing copper overlaying a tantalum-based barrier layer during the fabrication of a copper damascene structure having a plurality of copper lines. The method includes providing a chemical-mechanical polishing slurry and polishing the copper layer using the slurry until the tantalum-based barrier layer is exposed. The slurry includes an oxidizing agent that releases free radicals and a non-chelating free radical quencher that retards the corrosion of said copper lines during chemical mechanical polishing. Preferred non-chelating free radical quenchers are ascorbic acid, thiamine, 2-propanol, and alkyl glycols. The present invention also provides copper damascene structures formed according to the method.
摘要翻译：本发明提供一种在具有多条铜线的铜镶嵌结构的制造过程中去除覆盖钽基阻挡层的铜的方法。该方法包括提供化学机械抛光浆料并使用浆料抛光铜层，直到暴露出基于钽的阻挡层。浆料包括释放自由基的氧化剂和非螯合自由基猝灭剂，其在化学机械抛光期间延缓所述铜线的腐蚀。优选的非螯合自由基猝灭剂为抗坏血酸，硫胺素，2-丙醇和烷基二醇。本发明还提供了根据该方法形成的铜镶嵌结构。

7. 发明授权

US08435421B2 Metal-passivating CMP compositions and methods 有权
标题翻译：金属钝化CMP组合物和方法
公开(公告)号：US08435421B2
公开(公告)日：2013-05-07
申请号：US13004113
申请日：2011-01-11
申请人： Jason Keleher , Pankaj Singh , Vlasta Brusic
发明人： Jason Keleher , Pankaj Singh , Vlasta Brusic
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： C09G1/02 , C09K3/1409 , H01L21/3212
摘要： The present invention provides chemical-mechanical polishing (CMP) compositions and methods for polishing copper- and/or silver-containing substrates. The compositions of the present invention comprise a particulate abrasive, a primary film-forming metal-complexing agent, and a secondary film-forming metal-passivating agent in an aqueous carrier. Methods of polishing a substrate with the compositions of the invention are also disclosed.
摘要翻译：本发明提供用于抛光含铜和/或含银基材的化学机械抛光（CMP）组合物和方法。本发明的组合物在水性载体中包含颗粒磨料，初始成膜金属络合剂和二次成膜金属钝化剂。还公开了用本发明的组合物研磨衬底的方法。

8. 发明申请

US20090134122A1 Copper-passivating CMP compositions and methods 有权
标题翻译：铜钝化CMP组合物和方法
公开(公告)号：US20090134122A1
公开(公告)日：2009-05-28
申请号：US11986921
申请日：2007-11-27
申请人： Daniela White , Jason Keleher , John Parker
发明人： Daniela White , Jason Keleher , John Parker
IPC分类号： C09K13/00 , H01L21/302
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1409 , C23F3/04 , C23F3/06
摘要： The present invention provides chemical-mechanical polishing (CMP) methods and compositions for polishing copper-containing substrates. The methods of the present invention entail abrading a surface of a copper-containing substrate with a CMP composition of the invention, preferably in the presence of an oxidizing agent (e.g., hydrogen peroxide). The CMP compositions of the invention comprise a particulate abrasive, a copper-complexing agent, a copper-passivating agent bearing an acidic OH group and an additional oxygen substituent in a 1,6 relationship to the acidic OH group, and an aqueous carrier. A preferred composition of the invention comprises about 0.01 to about 1 percent by weight of the particulate abrasive, about 0.1 to about 1 percent by weight of the copper-complexing agent, about 10 to about 1000 ppm of the copper-passivating agent.
摘要翻译：本发明提供用于抛光含铜基材的化学机械抛光（CMP）方法和组合物。本发明的方法需要用本发明的CMP组合物，优选在氧化剂（例如过氧化氢）的存在下研磨含铜基材的表面。本发明的CMP组合物包含颗粒磨料，铜络合剂，带有酸性OH基团的铜钝化剂和与酸性OH基团1,6关系的另外的氧取代基和水性载体。本发明的优选组合物包含约0.01至约1重量％的颗粒磨料，约0.1至约1重量％的铜络合剂，约10至约1000ppm的铜钝化剂。

9. 发明授权

US06916428B2 Photo-chemical remediation of Cu-CMP waste 失效
公开(公告)号：US06916428B2
公开(公告)日：2005-07-12
申请号：US10678415
申请日：2003-10-03
申请人： Yuzhuo Li , Jason Keleher , Ning Gao
发明人： Yuzhuo Li , Jason Keleher , Ning Gao
IPC分类号： C02F1/30 , C02F1/32 , C02F1/68 , C02F1/70 , C02F1/72
CPC分类号： C02F1/32 , C02F1/30 , C02F1/683 , C02F1/705 , C02F1/725 , C02F2103/16 , C02F2103/346 , C02F2305/10 , Y02W10/37 , Y10S210/912
摘要： A photo-chemical remediation of Cu-CMP waste streams basically includes the following acts: adding photo-catalyst particles into waste streams containing copper ions and organic pollutants and exposing the waste streams to UV light or sunlight to make copper ions become deposited on surfaces of the photo-catalyst particles. Whereby, the copper ions are removed from the waste streams. Meanwhile, organic and inorganic pollutants are decomposed by the photolysis capability of the photo-catalyst to make the waste streams dischargable within environmental standards to the environment.

10. 发明授权

US06508953B1 Slurry for chemical-mechanical polishing copper damascene structures 失效
标题翻译：用于化学机械抛光铜镶嵌结构的浆料
公开(公告)号：US06508953B1
公开(公告)日：2003-01-21
申请号：US09692729
申请日：2000-10-19
申请人： Yuzhuo Li , Jason Keleher
发明人： Yuzhuo Li , Jason Keleher
IPC分类号： C09K1300
CPC分类号： C09G1/02 , C23F3/00
摘要： The present invention provides a chemical-mechanical polishing slurry for use in removing copper overlaying a tantalum-based barrier layer during the fabrication of a copper damascene structure, and a method of retarding the corrosion of copper lines during the chemical-mechanical polishing of a copper damascene structure using the slurry. The slurry according to the invention includes an oxidizing agent that releases free radicals and a non-chelating free radical quencher that is effective to retard the corrosion of the copper lines during chemical-mechanical polishing. Preferred oxidizing agents that release free radicals used in the slurry according to the invention include peroxides, peroxydiphosphates, and persulfates. Preferred non-chelating free radical quenchers used in the slurry according to the invention include ascorbic acid, thiamine, 2-propanol, and alkyl glycols, with ascorbic acid being most preferred.
摘要翻译：本发明提供了一种用于在铜镶嵌结构的制造期间去除覆盖钽基阻挡层的铜的化学机械抛光浆料，以及在铜化学机械抛光期间延缓铜线腐蚀的方法大马士革结构使用浆料。根据本发明的浆料包括释放自由基的氧化剂和非化学自由基猝灭剂，其在化学机械抛光期间有效地延缓铜线的腐蚀。根据本发明的用于释放浆料中的自由基的优选氧化剂包括过氧化物，过氧二磷酸酯和过硫酸盐。用于根据本发明的浆料中的优选的非螯合自由基猝灭剂包括抗坏血酸，硫胺素，2-丙醇和烷基二醇，其中抗坏血酸是最优选的。

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