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11. 发明授权

US07388892B2 System and method for optically powering a remote network component 有权
标题翻译：用于对远程网络组件进行光学供电的系统和方法
公开(公告)号：US07388892B2
公开(公告)日：2008-06-17
申请号：US11015109
申请日：2004-12-17
申请人： Nobuhiko Nishiyama , Michael Sauer , Chung-En Zah
发明人： Nobuhiko Nishiyama , Michael Sauer , Chung-En Zah
IPC分类号： H01S3/00
CPC分类号： H04B10/807
摘要： Both a system and method for optically powering a network component, such as the transponder of a picocell, is provided. The system includes a vertical cavity surface emitting laser (VCSEL) for processing an input signal, a remotely-located optical power source, and an optical fiber for conducting optical power from the source to the VCSEL. The VCSEL may be electrically biased from current generated by an optical-electro converter coupled to the fiber, or directly optically biased from light from the optical power source. A bias tee is connected between an input signal and an input of the VCSEL such that the VCSEL generates a modulated optical signal. The system may be the transponder of a picocell system where the VCSEL generates an optical uplink signal conducted to a head-end circuit via the same or a separate optical fiber.
摘要翻译：提供了用于光网络组件（诸如微微小区的应答器）的系统和方法。该系统包括用于处理输入信号的垂直腔表面发射激光器（VCSEL），位于远端的光功率源，以及用于将光功率从源极传导到VCSEL的光纤。 VCSEL可以由耦合到光纤的光电转换器产生的电流电偏置，或者从光功率源的光直接光偏置。偏置三通连接在VCSEL的输入信号和输入端之间，使得VCSEL产生调制的光信号。该系统可以是微微蜂窝系统的应答器，其中VCSEL通过相同或单独的光纤产生传导到头端电路的光上行链路信号。

12. 发明授权

US06982439B2 Tunnel junctions for long-wavelength VCSELs 有权
标题翻译：用于长波长VCSEL的隧道结
公开(公告)号：US06982439B2
公开(公告)日：2006-01-03
申请号：US11130947
申请日：2005-05-17
申请人： Rajaram Bhat , Nobuhiko Nishiyama
发明人： Rajaram Bhat , Nobuhiko Nishiyama
IPC分类号： H01L29/861 , H01L29/88
CPC分类号： H01S5/18308 , H01L29/205 , H01S5/18358 , H01S5/305 , H01S5/3054 , H01S5/3095 , H01S5/3235 , H01S2304/04
摘要： A tunnel junction device (102) with minimal hydrogen passivation of acceptors includes a p-type tunnel junction layer (106) of a first semiconductor material doped with carbon. The first semiconductor material includes aluminum, gallium, arsenic and antimony. An n-type tunnel junction layer (104) of a second semiconductor material includes indium, gallium, arsenic and one of aluminum and phosphorous. The junction between the p-type and an-type tunnel junction layers forms a tunnel junction (110).
摘要翻译：具有受体的最小氢钝化的隧道结装置（102）包括掺杂有碳的第一半导体材料的p型隧道结层（106）。第一半导体材料包括铝，镓，砷和锑。第二半导体材料的n型隧道结层（104）包括铟，镓，砷和铝和磷中的一种。 p型和a型隧道结层之间的结形成隧道结（110）。

13. 发明授权

US06449300B1 Surface-emitting laser 失效
标题翻译：表面发射激光
公开(公告)号：US06449300B1
公开(公告)日：2002-09-10
申请号：US09517182
申请日：2000-03-02
申请人： Kenichi Iga , Nobuhiko Nishiyama , Fumio Koyama
发明人： Kenichi Iga , Nobuhiko Nishiyama , Fumio Koyama
IPC分类号： H01S500
CPC分类号： H01S5/18333 , H01S5/0207 , H01S5/06226 , H01S5/18311 , H01S5/18341 , H01S5/18369
摘要： A surface-emitting laser in which a first distributed Bragg reflector composed of an alternately stacked structure made of two kinds of thin film, an active layer and a second distributed Bragg reflector composed of an alternately stacked structure made of two kinds of thin film, are formed on a semiconductor substrate, successively, including a current stenosed layer having an oxidized area in a remote junction surface therein between at least one of the first and the second distributed Bragg reflectors and the active layer, and plural capacitance-reducing layers, each layer having a smaller oxidized area than the oxidized area in a remote junction surface constituting the current stenosed layer, at least one of the first and the second distributed Bragg reflectors, the plural capacitance-reducing layers, the current stenosed layer and the active layer being arranged successively, one of the first and the second distributed Bragg reflectors constituting a first conductive type Bragg reflector, the other constituting a second conductive type Bragg reflector.
摘要翻译：一种表面发射激光器，其中由由两种薄膜构成的交替层叠结构的第一分布式布拉格反射器，由两种薄膜制成的交替层叠结构的有源层和第二分布式布拉格反射器组成，形成在半导体基板上，依次包括在第一和第二分布式布拉格反射器和有源层中的至少一个之间的远程接合表面中具有氧化区域的电流狭缝层和多个电容减小层，每个层在构成当前狭窄层的远程接合面中具有比氧化区域更小的氧化面积，第一和第二分布布拉格反射器，多个电容减小层，电流狭窄层和有源层中的至少一个被布置第一和第二分布布拉格反射器中的一个构成第一导电类型的布拉格反射器反射器，另一个构成第二导电型布拉格反射器。

14. 发明授权

US07400659B2 Method and device for performing DBR laser wavelength modulation free of thermal effect 失效
标题翻译：用于执行无热效应的DBR激光波长调制的方法和装置
公开(公告)号：US07400659B2
公开(公告)日：2008-07-15
申请号：US11297897
申请日：2005-12-08
申请人： Martin H Hu , Nobuhiko Nishiyama , Chung-En Zah
发明人： Martin H Hu , Nobuhiko Nishiyama , Chung-En Zah
IPC分类号： H01S3/13
CPC分类号： H01S5/06256 , H01S5/0092 , H01S5/06253 , H04N9/3129
摘要： The present invention is directed to a method and system for providing a three-level current scheme to a semiconductor laser to control beam wavelength and laser temperature. A first current is received into a gain section of the semiconductor laser and at least one other current is received into a DBR and/or phase section of the semiconductor laser. This other current(s) is pulse-width modulated based upon a required temperature value. An output beam is generated by the semiconductor laser based upon the received first current and the received pulse-width modulated current(s).
摘要翻译：本发明涉及一种用于向半导体激光器提供三电平电流方案以控制光束波长和激光器温度的方法和系统。第一电流被接收到半导体激光器的增益部分中，并且至少一个其它电流被接收到半导体激光器的DBR和/或相位部分中。基于所需的温度值对其它电流进行脉冲宽度调制。基于所接收的第一电流和所接收的脉冲宽度调制电流，由半导体激光器产生输出光束。

15. 发明申请

US20060133436A1 System and method for optically powering a remote network component 有权
标题翻译：用于对远程网络组件进行光学供电的系统和方法
公开(公告)号：US20060133436A1
公开(公告)日：2006-06-22
申请号：US11015109
申请日：2004-12-17
申请人： Nobuhiko Nishiyama , Michael Sauer , Chung-En Zah
发明人： Nobuhiko Nishiyama , Michael Sauer , Chung-En Zah
IPC分类号： H01S3/00
CPC分类号： H04B10/807
摘要： Both a system and method for optically powering a network component, such as the transponder of a picocell, is provided. The system includes a vertical cavity surface emitting laser (VCSEL) for processing an input signal, a remotely-located optical power source, and an optical fiber for conducting optical power from the source to the VCSEL. The VCSEL may be electrically biased from current generated by an optical-electro converter coupled to the fiber, or directly optically biased from light from the optical power source. A bias tee is connected between an input signal and an input of the VCSEL such that the VCSEL generates a modulated optical signal. The system may be the transponder of a picocell system where the VCSEL generates an optical uplink signal conducted to a head-end circuit via the same or a separate optical fiber.
摘要翻译：提供了用于光网络组件（诸如微微小区的应答器）的系统和方法。该系统包括用于处理输入信号的垂直腔表面发射激光器（VCSEL），位于远端的光功率源，以及用于将光功率从源极传导到VCSEL的光纤。 VCSEL可以由耦合到光纤的光电转换器产生的电流电偏置，或者从光功率源的光直接光偏置。偏置三通连接在VCSEL的输入信号和输入端之间，使得VCSEL产生调制的光信号。该系统可以是微微蜂窝系统的应答器，其中VCSEL通过相同或单独的光纤产生传导到头端电路的光上行链路信号。

16. 发明申请

US20050253222A1 Semiconductor devices on misoriented substrates 审中-公开
标题翻译：半导体器件接触不良的基板
公开(公告)号：US20050253222A1
公开(公告)日：2005-11-17
申请号：US10996515
申请日：2004-11-24
申请人： Catherine Caneau , Georgiy Guryanov , Nobuhiko Nishiyama
发明人： Catherine Caneau , Georgiy Guryanov , Nobuhiko Nishiyama
IPC分类号： H01L29/205 , H01L33/02 , H01L33/16 , H01S5/183 , H01S5/30 , H01S5/323 , H01L29/167
CPC分类号： H01S5/18355 , B82Y20/00 , H01L29/205 , H01L33/025 , H01L33/16 , H01S5/18308 , H01S5/18327 , H01S5/18358 , H01S5/18394 , H01S5/305 , H01S5/3054 , H01S5/3095 , H01S5/3202 , H01S5/3235 , H01S5/34313 , H01S2301/14 , H01S2304/04
摘要： A semiconductor device (100) includes a misoriented substrate (240) having a surface area inclined in a range of about 8 to 40 degrees from the {100} plane. At least one highly doped P-type semiconductor layer (106) of a first semiconductor material doped with Carbon (C) is grown over the surface area. At least one highly doped N-type semiconductor layer (104) of a second semiconductor material is grown over the surface area and near the at least one highly doped P-type semiconductor layer (106). A moderately doped P-type layer (60) is grown over the surface area, wherein the moderately doped P-type layer 60 has a third semiconductor material doped with a dopant selected as a member from the group consisting of Zn, Be, Cd and Mg. The devices 100 include VCSELs having tunnel junctions (110) and semiconductor DBRs (230) composed of AlGaInAs/InP or GaInAs/InP layers (2308/2302) on misoriented substrates 240.
摘要翻译：半导体器件（100）包括具有从{100}平面倾斜在约8至40度范围内的表面积的取向偏移的衬底（240）。在表面积上生长掺杂有碳（C）的第一半导体材料的至少一个高掺杂P型半导体层（106）。第二半导体材料的至少一个高掺杂N型半导体层（104）生长在表面区域上并且在至少一个高掺杂P型半导体层（106）附近。在表面积上生长适度掺杂的P型层（60），其中中等掺杂的P型层60具有掺杂有选自Zn，Be，Cd的一组成员的掺杂剂的第三半导体材料，以及镁器件100包括具有隧道结（110）的VCSEL和由偏置衬底240上的AlGaInAs / InP或GaInAs / InP层（2308/2302）组成的半导体DBR（230）。

17. 发明申请

US20060056475A1 Method of manufacturing an InP based vertical cavity surface emitting laser and device produced therefrom 有权
公开(公告)号：US20060056475A1
公开(公告)日：2006-03-16
申请号：US10944649
申请日：2004-09-16
申请人： Catherine Caneau , Benjamin Hall , Nobuhiko Nishiyama , Chung-En Zah
发明人： Catherine Caneau , Benjamin Hall , Nobuhiko Nishiyama , Chung-En Zah
IPC分类号： H01S5/00
CPC分类号： H01S5/183 , B82Y20/00 , H01S5/34306 , H01S5/34313
摘要： A method of fabricating an indium phosphide-based vertical cavity surface emitting laser (VCSEL) having a high reflectivity distributed Bragg reflector (DBR) that is particularly adapted for emitting a light having a center wavelength of around 1.30 micrometers. The method includes the steps of selecting a specific operating wavelength, determining the photon energy corresponding to the selected operating wavelength, selecting a maximum operating temperature in degrees Centigrade, and fabricating at least half of the high index layers of the distributed Bragg reflector (DBR) of the VCSEL from AlGaInAs or other material that can be epitaxially grown on the InP substrate to have a band gap equal to or greater than the sum of the photon energy (in milli-electron volts) plus the sum of the maximum operating temperature plus 110 divided by 1.96. The manufacture of the high index layers with such a band gap creates a sufficient difference in the indices of refraction of the alternating layers in the DBR, while keeping optical absorption low to maintain the reflectivity at least up to the desired maximum temperature, and obviates the need for using a DBR either bonded to the InP substrate, or grown metamorphically on it.

18. 发明申请

US20050253164A1 TUNNEL JUNCTIONS FOR LONG-WAVELENGTH VCSELS 有权
标题翻译：用于长波长VCSELS的隧道连接
公开(公告)号：US20050253164A1
公开(公告)日：2005-11-17
申请号：US11130947
申请日：2005-05-17
申请人： Rajaram Bhat , Nobuhiko Nishiyama
发明人： Rajaram Bhat , Nobuhiko Nishiyama
IPC分类号： H01L29/205 , H01S5/183 , H01S5/30 , H01S5/323 , H01L29/06 , H01L29/24 , H01L31/072
CPC分类号： H01S5/18308 , H01L29/205 , H01S5/18358 , H01S5/305 , H01S5/3054 , H01S5/3095 , H01S5/3235 , H01S2304/04
摘要： A tunnel junction device (102) with minimal hydrogen passivation of acceptors includes a p-type tunnel junction layer (106) of a first semiconductor material doped with carbon. The first semiconductor material includes aluminum, gallium, arsenic and antimony. An n-type tunnel junction layer (104) of a second semiconductor material includes indium, gallium, arsenic and one of aluminum and phosphorous. The junction between the p-type and an-type tunnel junction layers forms a tunnel junction (110).
摘要翻译：具有受体的最小氢钝化的隧道结装置（102）包括掺杂有碳的第一半导体材料的p型隧道结层（106）。第一半导体材料包括铝，镓，砷和锑。第二半导体材料的n型隧道结层（104）包括铟，镓，砷和铝和磷中的一种。 p型和a型隧道结层之间的结形成隧道结（110）。

19. 发明授权

US06933539B1 Tunnel junctions for long-wavelength VCSELs 有权
标题翻译：用于长波长VCSEL的隧道结
公开(公告)号：US06933539B1
公开(公告)日：2005-08-23
申请号：US10848456
申请日：2004-05-17
申请人： Rajaram Bhat , Nobuhiko Nishiyama
发明人： Rajaram Bhat , Nobuhiko Nishiyama
IPC分类号： H01L29/205 , H01S5/183 , H01S5/30 , H01S5/323 , H01L29/861 , H01L29/88
CPC分类号： H01S5/18308 , H01L29/205 , H01S5/18358 , H01S5/305 , H01S5/3054 , H01S5/3095 , H01S5/3235 , H01S2304/04
摘要： A tunnel junction device (102) with minimal hydrogen passivation of acceptors includes a p-type tunnel junction layer (106) of a first semiconductor material doped with carbon. The first semiconductor material includes aluminum, gallium, arsenic and antimony. An n-type tunnel junction layer (104) of a second semiconductor material includes indium, gallium, arsenic and one of aluminum and phosphorous. The junction between the p-type and an-type tunnel junction layers forms a tunnel junction (110).
摘要翻译：具有受体的最小氢钝化的隧道结装置（102）包括掺杂有碳的第一半导体材料的p型隧道结层（106）。第一半导体材料包括铝，镓，砷和锑。第二半导体材料的n型隧道结层（104）包括铟，镓，砷和铝和磷中的一种。 p型和a型隧道结层之间的结形成隧道结（110）。

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