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11. 发明申请

US20060126395A1 Non-volatile memory cell and operating method thereof 审中-公开
标题翻译：非易失性存储单元及其操作方法
公开(公告)号：US20060126395A1
公开(公告)日：2006-06-15
申请号：US11180093
申请日：2005-07-11
申请人： Shih-Hung Chen , Yi-Chou Chen
发明人： Shih-Hung Chen , Yi-Chou Chen
IPC分类号： G11C16/04 , G11C11/34
CPC分类号： G11C13/0004 , G11C13/003 , G11C2213/76
摘要： A non-volatile memory cell is provided. The non-volatile memory cell includes of a threshold switch material thin film and a memory switch material thin film, and the phases of the memory switch material layer is capable of changing. In addition, the memory switch material layer serves as a memory unit; the threshold switch material serves as a steering unit. Furthermore, the steering unit will breakdown when a voltage larger than its threshold voltage is provided, and the phase restores to the original state when the voltage is off.
摘要翻译：提供非易失性存储单元。非易失性存储单元包括阈值开关材料薄膜和存储器开关材料薄膜，并且存储器开关材料层的相位能够改变。此外，存储器开关材料层用作存储器单元; 阈值开关材料用作转向单元。此外，当提供大于其阈值电压的电压时，转向单元将击穿，并且当电压关闭时，相位恢复到原始状态。

12. 发明申请

US20120080657A1 LOW OPERATIONAL CURRENT PHASE CHANGE MEMORY STRUCTURES 有权
标题翻译：低运行电流相位变化记忆结构
公开(公告)号：US20120080657A1
公开(公告)日：2012-04-05
申请号：US13324946
申请日：2011-12-13
申请人： Shih-Hung Chen , Yi-Chou Chen
发明人： Shih-Hung Chen , Yi-Chou Chen
IPC分类号： H01L47/00
CPC分类号： H01L45/122 , H01L27/2436 , H01L45/06 , H01L45/12 , H01L45/1226 , H01L45/1233 , H01L45/1293 , H01L45/144 , H01L45/1616 , H01L45/1641 , H01L45/1675 , Y10S977/943
摘要： Memory cells described herein have an increased current density at lateral edges of the active region compared to that of conventional mushroom-type memory cells, resulting in improved operational current efficiency. As a result, the amount of heat generated within the lateral edges per unit value of current is increased relative to that of conventional mushroom-type memory cells. Therefore, the amount of current needed to induce phase change is reduced.
摘要翻译：与传统的蘑菇型存储器单元相比，本文所述的存储单元在有源区域的横向边缘处具有增加的电流密度，从而提高了操作电流效率。结果，相对于传统的蘑菇型存储单元，每单位电流值在横向边缘内产生的热量增加。因此，引起相变所需的电流量减少。

13. 发明申请

US20120016472A1 Color Tactile Vision System 有权
标题翻译：彩色触觉视觉系统
公开(公告)号：US20120016472A1
公开(公告)日：2012-01-19
申请号：US12836498
申请日：2010-07-14
申请人： Yi-Chou Chen , Shih Hung Chen , Yu-Yu Lin , Tung-Hua Chuang
发明人： Yi-Chou Chen , Shih Hung Chen , Yu-Yu Lin , Tung-Hua Chuang
IPC分类号： A61F9/08
CPC分类号： G09B21/003
摘要： A tactile display writer unit includes a probe having a contact tip, and at least a first actuator and a second actuator coupled to the probe, whereby activation of the actuators results in a displacement of the probe tip in one or more of a z-direction and in a lateral direction having a vector in an x-y plane. Also, a display writer includes a plurality of such units supported in an x-y array. The writer units may have a third actuator coupled to the probe. Also, a tactile vision system includes such a display writer, an image processor, and an image sensor. The processor transforms RGB image information from the image sensor into hue-based information having two or more attributes; and the actuators in the tactile display writer are activated by the information attributes. Also, a method for producing a tactile color stimulus at a site on the skin of a subject includes providing a probe having a contact tip; displacing the tip at the contact site in a direction generally normal to the skin surface at the site to an extent that relates one attribute of a hue-based model of the color, and displacing the tip in at least one lateral direction generally in a plane parallel to the skin surface at the site to an extent that relates to at least one additional attribute of the color.
摘要翻译：触觉显示写入器单元包括具有接触尖端的探针，以及耦合到探针的至少第一致动器和第二致动器，由此激活致动器导致探针尖端在z方向上的一个或多个中的位移并且在具有xy平面中的向量的横向方向上。此外，显示器写入器包括以x-y阵列支持的多个这样的单元。写入器单元可以具有耦合到探针的第三致动器。此外，触觉系统包括这样的显示写入器，图像处理器和图像传感器。处理器将RGB图像信息从图像传感器转换为具有两个或多个属性的基于色相的信息; 并且触觉显示写入器中的致动器被信息属性激活。此外，用于在被检体的皮肤上的部位产生触觉刺激的方法包括提供具有接触尖端的探针; 将位于接触位置处的尖端沿着与现场的皮肤表面大致垂直的方向移位到与颜色的基于色相的模型的一个属性相关联的程度，并且将尖端沿至少一个横向方向大致在平面中移位平行于该部位的皮肤表面至与颜色的至少一个附加属性有关的程度。

14. 发明授权

US07745807B2 Current constricting phase change memory element structure 失效
标题翻译：电流限制相变存储元件结构
公开(公告)号：US07745807B2
公开(公告)日：2010-06-29
申请号：US11776301
申请日：2007-07-11
申请人： Chieh-Fang Chen , Shih Hung Chen , Yi-Chou Chen , Thomas Happ , Chia Hua Ho , Ming-Hsiang Hsueh , Chung Hon Lam , Hsiang-Lan Lung , Jan Boris Philipp , Simone Raoux
发明人： Chieh-Fang Chen , Shih Hung Chen , Yi-Chou Chen , Thomas Happ , Chia Hua Ho , Ming-Hsiang Hsueh , Chung Hon Lam , Hsiang-Lan Lung , Jan Boris Philipp , Simone Raoux
IPC分类号： H01L29/02
CPC分类号： B82Y10/00 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/16
摘要： A layer of nanoparticles having a dimension on the order of 10 nm is employed to form a current constricting layer or as a hardmask for forming a current constricting layer from an underlying insulator layer. The nanoparticles are preferably self-aligning and/or self-planarizing on the underlying surface. The current constricting layer may be formed within a bottom conductive plate, within a phase change material layer, within a top conductive plate, or within a tapered liner between a tapered via sidewall and a via plug contains either a phase change material or a top conductive material. The current density of the local structure around the current constricting layer is higher than the surrounding area, thus allowing local temperature to rise higher than surrounding material. The total current required to program the phase change memory device, and consequently the size of a programming transistor, is reduced due to the current constricting layer.
摘要翻译：使用具有大约10nm的尺寸的纳米颗粒层形成电流收缩层或作为用于从下面的绝缘体层形成电流收缩层的硬掩模。纳米颗粒优选在下面的表面上自对准和/或自平坦化。电流收缩层可以形成在底部导电板内，在相变材料层内，在顶部导电板内，或在锥形衬垫之间的锥形衬里之间，锥形通孔侧壁和通孔插塞包含相变材料或顶部导电材料。电流收缩层周围的局部结构的电流密度高于周围区域，从而允许局部温度比周围材料高。由于电流收缩层，减少编程相变存储器件所需的总电流以及编程晶体管的尺寸。

15. 发明申请

US20100144128A1 Phase Change Memory Cell and Manufacturing Method 有权
标题翻译：相变记忆单元和制造方法
公开(公告)号：US20100144128A1
公开(公告)日：2010-06-10
申请号：US12703478
申请日：2010-02-10
申请人： Hsiang-Lan Lung , Rich Liu , Shih-Hung Chen , Yi-Chou Chen
发明人： Hsiang-Lan Lung , Rich Liu , Shih-Hung Chen , Yi-Chou Chen
IPC分类号： H01L21/36 , H01L21/00
CPC分类号： G11C8/10 , G11C8/08 , G11C13/0004 , G11C13/0028 , G11C2213/53 , G11C2213/79 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/1226 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1625 , H01L45/165 , H01L45/1675
摘要： A phase change memory cell includes first and second electrodes electrically coupled by a phase change element. At least a section of the phase change element comprises a higher reset transition temperature portion and a lower reset transition temperature portion. The lower reset transition temperature portion comprises a phase change region which can be transitioned, by the passage of electrical current therethrough, from generally crystalline to generally amorphous states at a lower temperature than the higher reset transition temperature portion. The phase change element may comprise an outer, generally tubular, higher reset transition temperature portion surrounding an inner, lower reset transition temperature portion.
摘要翻译：相变存储单元包括由相变元件电耦合的第一和第二电极。相变元件的至少一部分包括较高的复位转变温度部分和较低的复位转变温度部分。下复位转变温度部分包括可以通过电流通过从相对于较高复位转变温度部分的较低温度的大致结晶到大致非晶状态的相变区域。相变元件可以包括围绕内部，下部复位转变温度部分的外部，大体上管状的较高复位转变温度部分。

16. 发明申请

US20100117049A1 MEMORY CELL ACCESS DEVICE HAVING A PN-JUNCTION WITH POLYCRYSTALLINE PLUG AND SINGLE-CRYSTAL SEMICONDUCTOR REGIONS 有权
标题翻译：具有多晶硅管和单晶半导体区域的PN结的存储器单元访问器件
公开(公告)号：US20100117049A1
公开(公告)日：2010-05-13
申请号：US12267492
申请日：2008-11-07
申请人： HSIANG-LAN LUNG , Erh-Kun Lai , Yen-Hao Shih , Yi-Chou Chen , Shih-Hung Chen
发明人： HSIANG-LAN LUNG , Erh-Kun Lai , Yen-Hao Shih , Yi-Chou Chen , Shih-Hung Chen
IPC分类号： H01L47/00 , H01L21/36
CPC分类号： H01L45/1233 , H01L27/1021 , H01L27/2409 , H01L27/2463 , H01L27/2472 , H01L29/861 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/142 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/1675 , H01L45/1683
摘要： A memory device includes a driver comprising a pn-junction in the form of a multilayer stack including a first doped semiconductor region having a first conductivity type, and a second doped semiconductor plug having a second conductivity type opposite the first conductivity type, the first and second doped semiconductors defining a pn junction therebetween, in which the first doped semiconductor region is formed in a single-crystalline semiconductor, and the second doped semiconductor region includes a polycrystalline semiconductor. Also, a method for making a memory device includes forming a first doped semiconductor region of a first conductivity type in a single-crystal semiconductor, such as on a semiconductor wafer; and forming a second doped polycrystalline semiconductor region of a second conductivity type opposite the first conductivity type, defining a pn junction between the first and second regions.
摘要翻译：存储器件包括驱动器，其包括多层堆叠形式的pn结，其包括具有第一导电类型的第一掺杂半导体区域和具有与第一导电类型相反的第二导电类型的第二掺杂半导体插头，第一和第第二掺杂半导体，其中限定其间的pn结，其中所述第一掺杂半导体区域形成在单晶半导体中，并且所述第二掺杂半导体区域包括多晶半导体。此外，制造存储器件的方法包括在半导体晶片上形成单晶半导体中的第一导电类型的第一掺杂半导体区域; 以及形成与第一导电类型相反的第二导电类型的第二掺杂多晶半导体区域，限定第一和第二区域之间的pn结。

17. 发明申请

US20090014704A1 CURRENT CONSTRICTING PHASE CHANGE MEMORY ELEMENT STRUCTURE 失效
标题翻译：当前的相位变化记忆元素结构
公开(公告)号：US20090014704A1
公开(公告)日：2009-01-15
申请号：US11776301
申请日：2007-07-11
申请人： Chieh-Fang Chen , Shih Hung Chen , Yi-Chou Chen , Thomas Happ , Chia Hua Ho , Ming-Hsiang Hsueh , Chung Hon Lam , Hsiang-Lan Lung , Jan Boris Philipp , Simone Raoux
发明人： Chieh-Fang Chen , Shih Hung Chen , Yi-Chou Chen , Thomas Happ , Chia Hua Ho , Ming-Hsiang Hsueh , Chung Hon Lam , Hsiang-Lan Lung , Jan Boris Philipp , Simone Raoux
IPC分类号： H01L29/04
CPC分类号： B82Y10/00 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/16
摘要： A layer of nanopaiticles having a dimension on the order of 10 nm is employed to form a current constricting layer or as a hardmask for forming a current constricting layer from an underlying insulator layer. The nanoparticles are preferably self-aligning and/or self-planarizing on the underlying surface. The current constricting layer may be formed within a bottom conductive plate, within a phase change material layer, within a top conductive plate, or within a tapered liner between a tapered via sidewall and a via plug contains either a phase change material or a top conductive material. The current density of the local structure around the current constricting layer is higher than the surrounding area, thus allowing local temperature to rise higher than surrounding material. The total current required to program the phase change memory device, and consequently the size of a programming transistor, is reduced due to the current constricting layer.
摘要翻译：使用具有大约10nm的尺寸的纳米颗粒层来形成电流收缩层或用作从底层绝缘体层形成电流收缩层的硬掩模。纳米颗粒优选在下面的表面上自对准和/或自平坦化。电流收缩层可以形成在底部导电板内，在相变材料层内，在顶部导电板内，或在锥形衬垫之间的锥形衬里之间，锥形通孔侧壁和通孔插塞包含相变材料或顶部导电材料。电流收缩层周围的局部结构的电流密度高于周围区域，从而允许局部温度比周围材料高。由于电流收缩层，减少编程相变存储器件所需的总电流以及编程晶体管的尺寸。

18. 发明授权

US09368046B2 Color tactile vision system 有权
标题翻译：彩色触觉视觉系统
公开(公告)号：US09368046B2
公开(公告)日：2016-06-14
申请号：US12836498
申请日：2010-07-14
申请人： Yi-Chou Chen , Shih Hung Chen , Yu-Yu Lin , Tung-Hua Chuang
发明人： Yi-Chou Chen , Shih Hung Chen , Yu-Yu Lin , Tung-Hua Chuang
IPC分类号： H04N9/47 , G09B21/00
CPC分类号： G09B21/003
摘要： A tactile display writer unit includes a probe having a contact tip, and at least a first actuator and a second actuator coupled to the probe, whereby activation of the actuators results in a displacement of the probe tip in one or more of a z-direction and in a lateral direction having a vector in an x-y plane. Also, a display writer includes a plurality of such units supported in an x-y array. The writer units may have a third actuator coupled to the probe. Also, a tactile vision system includes such a display writer, an image processor, and an image sensor. The processor transforms RGB image information from the image sensor into hue-based information having two or more attributes; and the actuators in the tactile display writer are activated by the information attributes. Also, a method for producing a tactile color stimulus at a site on the skin of a subject includes providing a probe having a contact tip; displacing the tip at the contact site in a direction generally normal to the skin surface at the site to an extent that relates one attribute of a hue-based model of the color, and displacing the tip in at least one lateral direction generally in a plane parallel to the skin surface at the site to an extent that relates to at least one additional attribute of the color.
摘要翻译：触觉显示写入器单元包括具有接触尖端的探针，以及耦合到探针的至少第一致动器和第二致动器，由此激活致动器导致探针尖端在z方向上的一个或多个中的位移并且在具有xy平面中的向量的横向方向上。此外，显示器写入器包括以x-y阵列支持的多个这样的单元。写入器单元可以具有耦合到探针的第三致动器。此外，触觉系统包括这样的显示写入器，图像处理器和图像传感器。处理器将RGB图像信息从图像传感器转换为具有两个或多个属性的基于色相的信息; 并且触觉显示写入器中的致动器被信息属性激活。此外，用于在被检体的皮肤上的部位产生触觉刺激的方法包括提供具有接触尖端的探针; 将位于接触位置处的尖端沿着与现场的皮肤表面大致垂直的方向移位到与颜色的基于色相的模型的一个属性相关联的程度，并且将尖端沿至少一个横向方向大致在平面中移位平行于该部位的皮肤表面至与颜色的至少一个附加属性有关的程度。

19. 发明授权

US08916845B2 Low operational current phase change memory structures 有权
标题翻译：低工作电流相变存储器结构
公开(公告)号：US08916845B2
公开(公告)日：2014-12-23
申请号：US13324946
申请日：2011-12-13
申请人： Shih-Hung Chen , Yi-Chou Chen
发明人： Shih-Hung Chen , Yi-Chou Chen
IPC分类号： H01L47/00 , H01L45/00 , H01L27/24
CPC分类号： H01L45/122 , H01L27/2436 , H01L45/06 , H01L45/12 , H01L45/1226 , H01L45/1233 , H01L45/1293 , H01L45/144 , H01L45/1616 , H01L45/1641 , H01L45/1675 , Y10S977/943
摘要： Memory cells described herein have an increased current density at lateral edges of the active region compared to that of conventional mushroom-type memory cells, resulting in improved operational current efficiency. As a result, the amount of heat generated within the lateral edges per unit value of current is increased relative to that of conventional mushroom-type memory cells. Therefore, the amount of current needed to induce phase change is reduced.
摘要翻译：与传统的蘑菇型存储器单元相比，本文所述的存储单元在有源区域的横向边缘处具有增加的电流密度，从而提高了操作电流效率。结果，相对于传统的蘑菇型存储单元，每单位电流值在横向边缘内产生的热量增加。因此，引起相变所需的电流量减少。

20. 发明授权

US08907316B2 Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions 有权
标题翻译：具有与多晶和单晶半导体区域的pn结的存储单元访问装置
公开(公告)号：US08907316B2
公开(公告)日：2014-12-09
申请号：US12267453
申请日：2008-11-07
申请人： Hsiang-Lan Lung , Erh-Kun Lai , Yen-Hao Shih , Yi-Chou Chen , Shih-Hung Chen
发明人： Hsiang-Lan Lung , Erh-Kun Lai , Yen-Hao Shih , Yi-Chou Chen , Shih-Hung Chen
IPC分类号： H01L47/00 , H01L45/00 , H01L27/102 , H01L27/24 , H01L29/861 , H01L29/165 , H01L29/04 , G11C13/00
CPC分类号： H01L29/8616 , G11C13/0004 , G11C2213/72 , H01L27/1021 , H01L27/2409 , H01L27/2463 , H01L27/2472 , H01L29/04 , H01L29/165 , H01L29/861 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/142 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/1675 , H01L45/1683
摘要： A memory device includes a driver comprising a pn-junction in the form of a multilayer stack including a first doped semiconductor region having a first conductivity type, and a second doped semiconductor region having a second conductivity type opposite the first conductivity type, the first and second doped semiconductors defining a pn-junction therebetween, in which the first doped semiconductor region is formed in a single-crystalline semiconductor, and the second doped semiconductor region includes a polycrystalline semiconductor. Also, a method for making a memory device includes forming a first doped semiconductor region of a first conductivity type in a single-crystal semiconductor, such as on a semiconductor wafer; and forming a second doped polycrystalline semiconductor region of a second conductivity type opposite the first conductivity type, defining a pn-junction between the first and second regions.
摘要翻译：存储器件包括驱动器，其包括多层堆叠形式的pn结，其包括具有第一导电类型的第一掺杂半导体区域和具有与第一导电类型相反的第二导电类型的第二掺杂半导体区域，第一和第二掺杂半导体，其中限定其间的pn结，其中所述第一掺杂半导体区形成在单晶半导体中，并且所述第二掺杂半导体区包括多晶半导体。此外，制造存储器件的方法包括在半导体晶片上形成单晶半导体中的第一导电类型的第一掺杂半导体区域; 以及形成与所述第一导电类型相反的第二导电类型的第二掺杂多晶半导体区域，限定所述第一和第二区域之间的pn结。

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