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11. 发明授权

US07855385B2 SiC crystal and semiconductor device 有权
标题翻译： SiC晶体和半导体器件
公开(公告)号：US07855385B2
公开(公告)日：2010-12-21
申请号：US12152016
申请日：2008-05-12
申请人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya , Masahiro Yoshimoto , Hiroyuki Kinoshita
发明人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya , Masahiro Yoshimoto , Hiroyuki Kinoshita
IPC分类号： H01L31/0312
CPC分类号： B23K35/262 , C22C13/00 , H01B1/026
摘要： The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm−3; donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×1017 cm−3 and donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.
摘要翻译：本发明公开了一种SiC晶体，其包含：浓度大于5×1017cm-3的受主杂质; 供体杂质浓度小于1×1019 cm-3，大于受主杂质的浓度。本发明公开了一种半导体器件，包括：具有浓度大于5×1017cm-3的受主杂质的SiC荧光层和浓度小于1×1019 cm -3并且大于受体杂质浓度; 以及层叠在SiC荧光层上并发射用于SiC荧光层的激发光的发光层。

12. 发明授权

US07732826B2 Semiconductor and method of semiconductor fabrication 有权
标题翻译：半导体和半导体制造方法
公开(公告)号：US07732826B2
公开(公告)日：2010-06-08
申请号：US11603977
申请日：2006-11-21
申请人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya , Hiroyuki Kinoshita
发明人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya , Hiroyuki Kinoshita
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/04 , H01L33/06 , H01L33/08 , H01L33/32
摘要： The present invention discloses a semiconductor, includes one or more luminescent layers; and one or more electron gas layers with two-dimensional electron gases that are distributed parallel to the luminescent layers.
摘要翻译：本发明公开了一种半导体，包括一个或多个发光层; 以及具有与发光层平行分布的二维电子气体的一个或多个电子气体层。

13. 发明授权

US07538780B2 Drawing processing apparatus, display apparatus, drawing processing method and navigation apparatus 有权
标题翻译：绘图处理装置，显示装置，绘图处理方法和导航装置
公开(公告)号：US07538780B2
公开(公告)日：2009-05-26
申请号：US11364193
申请日：2006-03-01
申请人： Takeshi Ota , Takumi Arie , Isao Watanabe , Hiroshi Amano , Yuichi Ando
发明人： Takeshi Ota , Takumi Arie , Isao Watanabe , Hiroshi Amano , Yuichi Ando
IPC分类号： G09G5/00
CPC分类号： G06T17/05
摘要： A drawing processing apparatus and method wherein scrolling display which provides no sense of incongruity is achieved in 3D display. 3D information is produced using information in a drawing object range extracted as a predetermined range on map data. The drawing object range of an object of the 3D drawing process is moved in response to a scrolling operation. While the drawing object range is moved, 3D image data are successively produced using the drawing object range at every point of time and outputted to implement 3D display on a display screen. Thereupon, the drawing object range to be used for the 3D drawing is moved such that individual portions in the drawing object range are moved by movement amounts determined with reference to a distance in a perpendicular direction at a reference position in the drawing object range.
摘要翻译：在3D显示中实现了不具有不协调感的滚动显示的绘图处理装置和方法。使用在地图数据上作为预定范围提取的绘图对象范围内的信息生成3D信息。响应于滚动操作，移动3D绘图处理的对象的绘制对象范围。当绘图对象范围移动时，使用每个时间点的绘制对象范围连续地生成3D图像数据，并输出以在显示屏幕上实现3D显示。于是，用于3D绘图的绘制对象范围被移动，使得绘制对象范围内的各个部分以参考在绘制对象范围内的基准位置的垂直方向的距离确定的移动量移动。

14. 发明授权

US07479534B2 One-component epoxy resin composition 有权
标题翻译：单组分环氧树脂组合物
公开(公告)号：US07479534B2
公开(公告)日：2009-01-20
申请号：US11491118
申请日：2006-07-24
申请人： Hiroshi Amano , Osamu Yamabe , Hiroyasu Koto
发明人： Hiroshi Amano , Osamu Yamabe , Hiroyasu Koto
IPC分类号： C08G59/66
CPC分类号： C08G59/686 , C08G59/18 , C08G59/66
摘要： The present application relates to a one-component epoxy resin composition that contains an epoxy resin containing: (1) an epoxy resin having 2 or more epoxy groups in the molecule, (2) a polythiol compound having 2 or more thiol groups in the molecule, (3) a compound that releases a basic component under a curing temperature condition and dissolves in constituent (2), and (4) a compound having Lewis acidity. The present invention also relates to a method of producing the same.
摘要翻译：本申请涉及含有环氧树脂的单组分环氧树脂组合物，其包含：（1）分子中具有2个以上环氧基的环氧树脂，（2）分子中具有2个以上硫醇基的多硫醇化合物，（3）在固化温度条件下释放碱性成分并溶解于成分（2）中的化合物，（4）具有路易斯酸性的化合物。本发明还涉及其制备方法。

15. 发明授权

US07183578B2 Semiconductor apparatus, method for growing nitride semiconductor and method for producing semiconductor apparatus 失效
标题翻译：半导体装置，氮化物半导体的生长方法及半导体装置的制造方法
公开(公告)号：US07183578B2
公开(公告)日：2007-02-27
申请号：US11365459
申请日：2006-02-28
申请人： Isamu Akasaki , Hiroshi Amano , Satoshi Kamiyama , Takanori Yasuda , Toshiya Matsuda
发明人： Isamu Akasaki , Hiroshi Amano , Satoshi Kamiyama , Takanori Yasuda , Toshiya Matsuda
IPC分类号： H01L27/15
CPC分类号： C30B25/02 , C30B25/183 , C30B29/403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02546 , H01L21/0262 , H01L21/2205 , H01L33/007
摘要： A semiconductor apparatus includes a substrate made of a diboride single crystal expressed by a chemical formula XB2, in which X includes at least one of Ti, Zr, Nb and Hf, a semiconductor buffer layer formed on a principal surface of the substrate and made of AlyGa1−yN (0
摘要翻译：半导体装置包括由化学式XB 2 X表示的二硼化物单晶制成的基板，其中X包括Ti，Zr，Nb和Hf中的至少一种，形成在半导体缓冲层上的半导体缓冲层该衬底的主表面由Al y Ga 1-y N（0

16. 发明申请

US20060102924A1 Diboride single crystal substrate, semiconductor device using this and its manufacturing method 失效
标题翻译：二硼化物单晶基板，使用这种半导体器件及其制造方法
公开(公告)号：US20060102924A1
公开(公告)日：2006-05-18
申请号：US10525753
申请日：2003-08-21
申请人： Shigeki Otani , Hiroyuki Kinoshita , Hiroyuki Matsunami , Jun Suda , Hiroshi Amano , Isamu Akasaki , Satoshi Kamiyama
发明人： Shigeki Otani , Hiroyuki Kinoshita , Hiroyuki Matsunami , Jun Suda , Hiroshi Amano , Isamu Akasaki , Satoshi Kamiyama
IPC分类号： H01L33/00
CPC分类号： H01L31/0264 , C30B29/10 , C30B33/00 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L29/045 , H01L29/24 , H01S5/0213 , H01S5/0218 , H01S5/32341
摘要： Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a semiconductor device using such a substrate and methods of their manufacture wherein the substrate is a single crystal substrate 1 of diboride XB2 (where X is either Zr or Ti) which is facially oriented in a (0001) plane 2 and has a thickness of 0.1 mm or less. The substrate 1 is permitted cleaving and splitting along a (10-10) plane 4 with ease. Using this substrate to form a semiconductor laser diode of a nitride compound, a vertical structure device can be realized. Resonant planes of a semiconductor laser diode with a minimum of loss can be fabricated by splitting the device in a direction parallel to the (10-10) plane. A method of manufacture that eliminates a margin of cutting is also realized.
摘要翻译：公开了具有与氮化物化合物半导体相同的解理面并具有导电性的二硼化物单晶基板; 半导体激光二极管和使用这种衬底的半导体器件及其制造方法，其中衬底是面向取向的二硼化物XB 2 N（其中X是Zr或Ti）的单晶衬底1 在（0001）面2中，具有0.1mm以下的厚度。允许衬底1容易地沿着（10-10）平面4进行切割和分割。使用该基板形成氮化物化合物的半导体激光二极管，可以实现垂直结构装置。具有最小损耗的半导体激光二极管的谐振平面可以通过在与（10-10）平面平行的方向上分割器件来制造。还实现了消除切割余量的制造方法。

17. 发明申请

US20050066885A1 Group III-nitride semiconductor substrate and its manufacturing method 审中-公开
标题翻译： III族氮化物半导体衬底及其制造方法
公开(公告)号：US20050066885A1
公开(公告)日：2005-03-31
申请号：US10500002
申请日：2002-12-26
申请人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Shigeki Ohtani , Jun Suda
发明人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Shigeki Ohtani , Jun Suda
IPC分类号： C30B29/38 , C30B25/02 , C30B25/18 , H01L21/20 , H01L21/205 , H01L33/12 , H01L33/32 , H01S5/323 , B32B9/00 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： Disclosed are a group III-nitride semiconductor substrate and a production method therefor. A group III-nitride semiconductor substrate having an element-forming surface with a dislocation density of 107 cm−2 or less in its entirely is formed only two steps. In a first step, a AlGaN-based low-temperature buffer layer is formed on a ZrB2 single crystal base having a defect density of 107 cm−2 or less, at a base temperature allowing the low-temperature buffer layer to be grown or deposited on the ZrB2 single crystal base substantially without creation of any Zr—B—N amorphous nitrided layer. Subsequently, in a second step, an AlGaN-based single crystal film is grown directly on the low-temperature buffer layer. The present invention can fully bring out the properties of the ZrB2 single crystal base having a high potential as a base material capable of lattice marching with group III-nitride semiconductors, so as to achieve a high-quality AlGaN semiconductor layer with an element-forming surface having a low dislocation density, through a fully simplified process.
摘要翻译：公开了III族氮化物半导体衬底及其制造方法。具有位错密度为10 -7 cm -2以下的元素形成表面的III族氮化物半导体衬底完全仅形成两个步骤。在第一步骤中，在基底温度下，在缺陷密度为10 -7 cm -2以下的ZrB2单晶基底上形成AlGaN系低温缓冲层，使得低温缓冲层在ZrB2单晶基底上生长或沉积，基本上不产生任何Zr-BN无定形氮化层。随后，在第二步骤中，直接在低温缓冲层上生长AlGaN基单晶膜。本发明可以充分发挥具有高电位的ZrB2单晶基体作为能够与III族氮化物半导体进行晶格游离的基体材料的性能，从而获得具有元素形成的高质量的AlGaN半导体层表面具有低位错密度，通过完全简化的过程。

18. 发明授权

US06446001B1 Navigation apparatus for navigating a vehicle based on symbolic sounds 有权
标题翻译：基于符号声音导航车辆的导航装置
公开(公告)号：US06446001B1
公开(公告)日：2002-09-03
申请号：US09519211
申请日：2000-03-06
申请人： Hideki Sakai , Takashi Takinami , Miyuki Matsumoto , Hiroshi Amano
发明人： Hideki Sakai , Takashi Takinami , Miyuki Matsumoto , Hiroshi Amano
IPC分类号： G01C2130
CPC分类号： G01C21/3629
摘要： A navigation apparatus includes a command input block from which the user inputs a command signal, a current positional data supply unit, a data reading unit for reading from a CD-ROM map data, voice guidance data, object data about an object displayed on a map of the navigation apparatus, and sound data symbolizing a geographical location corresponding to the object on the map, and a controller for displaying the map and the object onto a display device and sounding the voice guidance and sound data from a speaker.
摘要翻译：导航装置包括用户从其输入命令信号的命令输入块，当前位置数据提供单元，用于从CD-ROM映射数据读取的数据读取单元，语音引导数据，关于显示在对象上的对象的对象数据导航装置的地图，以及符号表示与地图上的对象相对应的地理位置的声音数据，以及控制器，用于将地图和对象显示在显示装置上，并从扬声器发出声音引导和声音数据。

19. 发明授权

US06188087B1 Semiconductor light-emitting device 失效
标题翻译：半导体发光装置
公开(公告)号：US06188087B1
公开(公告)日：2001-02-13
申请号：US08925323
申请日：1997-09-08
申请人： Norikatsu Koide , Masayoshi Koike , Shiro Yamasaki , Isamu Akasaki , Hiroshi Amano
发明人： Norikatsu Koide , Masayoshi Koike , Shiro Yamasaki , Isamu Akasaki , Hiroshi Amano
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01S5/0213 , H01S5/32341
摘要： A novel light-emitting device includes a sapphire substrate with a light-emitting layer comprising InXGa1−XN, where the critical value of the indium mole fraction X is determined by a newly derived relationship between the indium mole fraction X and the wavelength &lgr; of emitted light.
摘要翻译：一种新颖的发光器件包括具有包含InXGa1-XN的发光层的蓝宝石衬底，其中铟摩尔分数X的临界值由新的衍生的铟摩尔分数X与发射的波长长度之间的关系确定光。

20. 发明授权

US5889806A Group III nitride compound semiconductor laser diodes 失效
标题翻译： III族氮化物半导体激光二极管
公开(公告)号：US5889806A
公开(公告)日：1999-03-30
申请号：US908938
申请日：1997-08-08
申请人： Seiji Nagai , Shiro Yamasaki , Masayoshi Koike , Kazuyoshi Tomita , Tetsu Kachi , Isamu Akasaki , Hiroshi Amano
发明人： Seiji Nagai , Shiro Yamasaki , Masayoshi Koike , Kazuyoshi Tomita , Tetsu Kachi , Isamu Akasaki , Hiroshi Amano
IPC分类号： H01L33/06 , H01L33/14 , H01L33/20 , H01L33/32 , H01S5/00 , H01S5/20 , H01S5/32 , H01S5/323 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/343 , H01S5/2004 , H01S5/3211 , H01S5/34333
摘要： A laser diode using Group III nitride compound semiconductor consists of In.sub.0.2 Ga.sub.0.8 N/GaN SQW active layer 5, a pair of GaN guide layers 41 and 62, sandwiching the active layer with wider forbidden band than the active layer, and a pair of Al.sub.0.08 Ga.sub.0.92 N cladding layer 4 and 71, sandwiching a pair of the guide layers, and the LD confines carriers and light separately. Al.sub.0.15 Ga.sub.0.75 N stopper layers 41 and 62 with wider forbidden band than the guide layers are formed in some portion of each of the guide layers 41 and 62 in parallel to the active layer. As a result, carriers are confined in the active layer and the laser output of the LD is improved.
摘要翻译：使用III族氮化物化合物半导体的激光二极管由In0.2Ga0.8N / GaN SQW有源层5，一对GaN引导层41和62组成，其中活性层具有比有源层更宽的禁带，以及一对 Al0.08Ga0.92N包覆层4和71夹着一对引导层，LD分别限制载流子和光。每个引导层41和62的一部分平行于有源层形成具有比引导层更宽的禁带宽度的Al 0.15 Ga 0.75 N阻挡层41和62。结果，载流子被限制在有源层中，并且LD的激光输出被改善。

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