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11. 发明授权

US5071749A Glycopetide antibiotic PA-45052-B 失效
标题翻译： GLYCOPETIDE抗生素PA-45052-B
公开(公告)号：US5071749A
公开(公告)日：1991-12-10
申请号：US174449
申请日：1988-03-25
申请人： Eiji Kondo , Yoshimi Kawamura , Naoki Tsuji , Koichi Matsumoto , Masaaki Kobayashi , Toshiyuki Kamigauchi , Yoshiyuki Hayashi , Takao Konishi
发明人： Eiji Kondo , Yoshimi Kawamura , Naoki Tsuji , Koichi Matsumoto , Masaaki Kobayashi , Toshiyuki Kamigauchi , Yoshiyuki Hayashi , Takao Konishi
IPC分类号： C07K9/00 , C12P21/04
CPC分类号： C07K9/008
摘要： Glycopeptide antibiotics PA-45052 which are produced by Nocardia orientalis PA-45052, show potent activity against gram-positive bacteria, especially against methicillin-resistant bacteria, and stimulate growth of animals.

12. 发明授权

US4456686A Antibiotic PA-39504-X.sub.1 and production thereof 失效
标题翻译：抗生素PA-39504-X1及其生产
公开(公告)号：US4456686A
公开(公告)日：1984-06-26
申请号：US421580
申请日：1982-09-22
申请人： Kentaro Tanaka , Eiji Kondo , Kouichi Matsumoto , Jun'ichi Shoji , Naoki Tsuji
发明人： Kentaro Tanaka , Eiji Kondo , Kouichi Matsumoto , Jun'ichi Shoji , Naoki Tsuji
IPC分类号： C07D477/00 , A61K31/397 , A61K31/40 , A61P31/04 , C07D477/20 , C12P17/18 , C12R1/465
CPC分类号： C07D477/20 , C12P17/184 , C12R1/465 , Y10S435/886
摘要： A new antibiotic having .beta.-lactamase inhibitory activity, PA-39504-X.sub.1 of the formula: ##STR1## being useful as a medicament and a veterinary drug for inhibiting the growth of gram-positive and gram-negative pathogenic microorganisms and a process for preparing the same, being characterized by cultivating Streptomyces argenteolus PA-39504 or Streptomyces tokunonensis PA-31088 in a suitable medium and recovering PA-39504-X.sub.1 from the cultured broth.

13. 发明授权

US4448723A Antibiotics PA-41746-B and C 失效
标题翻译：抗生素PA-41746-B和C
公开(公告)号：US4448723A
公开(公告)日：1984-05-15
申请号：US432102
申请日：1982-09-29
申请人： Kentaro Tanaka , Eiji Kondo , Mikao Mayama , Kouichi Matsumoto , Yoshimi Kawamura , Naoki Tsuji
发明人： Kentaro Tanaka , Eiji Kondo , Mikao Mayama , Kouichi Matsumoto , Yoshimi Kawamura , Naoki Tsuji
IPC分类号： C07D477/00 , A61K31/397 , A61K31/40 , A61P31/04 , C07D477/20 , C12P1/06 , C12P17/18 , C12R1/465 , C07D487/04
CPC分类号： C07D477/20 , C12P17/184
摘要： New antibiotics having .beta.-lactamase inhibitory activity, PA-41746-B and C of the formula ##STR1## wherein R is carboxymethylsulfinyl (PA-41746-B) or formylsulfinyl (PA-41746-C) and the pharmaceutically acceptable salts being useful as a medicament, a veterinary drug and a disinfectant for inhibiting the growth of gram-positive and gram-negative pathogenic microorganisms and a process for preparing the same, being characterized by cultivating Streptomyces pluracidomyceticus in a suitable medium and isolating PA-41746-B and/or PA-41746-C from the culture broth.
摘要翻译：具有β-内酰胺酶抑制活性的新抗生素，式为IMA IMA的PA-41746-B和C，其中R为羧甲基亚磺酰基（PA-41746-B）或甲酰亚磺酰基（PA-41746-C），其药学上可接受的盐可用作用于抑制革兰氏阳性和革兰氏阴性病原微生物生长的药物，兽药和消毒剂及其制备方法，其特征在于在合适的培养基中培养链霉菌（Streptomyces pluracidomyceticus）并分离PA-41746-B和/ 或来自培养液的PA-41746-C。

14. 发明授权

US4387052A Antibiotic PA-39504-X.sub.3 and production thereof 失效
标题翻译：抗生素PA-39504-X3及其生产
公开(公告)号：US4387052A
公开(公告)日：1983-06-07
申请号：US286757
申请日：1981-07-27
申请人： Kentaro Tanaka , Eiji Kondo , Kouichi Matsumoto , Jun'ichi Shoji , Naoki Tsuji
发明人： Kentaro Tanaka , Eiji Kondo , Kouichi Matsumoto , Jun'ichi Shoji , Naoki Tsuji
IPC分类号： C07D477/00 , A61K31/397 , A61K31/40 , A61P31/04 , C07D477/20 , C12P17/18 , C12R1/465 , C07D487/04
CPC分类号： C07D477/20 , C12P17/184
摘要： A new antibiotic having .beta.-lactamase inhibitory activity, PA-39504-X.sub.3 of the formula: ##STR1## and the pharmaceutically acceptable slats being useful as a drug, a animal drug and a disinfectant for inhibiting the growth of gram-positive and gram-negative pathogenic microorganisms and a process for preparing the same, being characterized by cultivating Streptomyces argenteolus PA-39504 or Streptomyces tokunonensis PA-31088 in a suitable medium and isolating PA-39504-X.sub.3 from the cultured broth.
摘要翻译：具有β-内酰胺酶抑制活性的新型抗生素，下式的PA-39504-X3：药物可接受的片剂可用作药物，动物药物和用于抑制革兰氏阳性和革兰氏阳性菌生长的消毒剂，阴性致病微生物及其制备方法，其特征在于在合适的培养基中培养棒状链霉菌PA-39504或链霉菌Tokunonensis PA-31088，并从培养液中分离PA-39504-X3。

15. 发明申请

US20120064402A1 LEAD-ACID BATTERY AND METHOD FOR MANUFACTURING CURRENT COLLECTOR FOR LEAD-ACID BATTERY 有权
标题翻译：铅酸蓄电池及铅酸蓄电池电流收集器的制造方法
公开(公告)号：US20120064402A1
公开(公告)日：2012-03-15
申请号：US13047153
申请日：2011-03-14
申请人： Hiroki TSUJI , Masatoshi Miyatsuka , Kazuya Sasaki , Naoki Tsuji , Kenichi Maeda , Yoshifumi Yamada
发明人： Hiroki TSUJI , Masatoshi Miyatsuka , Kazuya Sasaki , Naoki Tsuji , Kenichi Maeda , Yoshifumi Yamada
IPC分类号： H01M4/02 , H01M6/00
CPC分类号： H01M6/005 , H01M2/266 , H01M2/305 , H01M4/73 , H01M4/742 , H01M4/745 , H01M10/06 , H01M10/12 , Y02E60/126 , Y02P70/54 , Y10T29/49108
摘要： Provided herein is a lead-acid battery for which the risk of breakage of a current collecting lug part of a plate while in use is eliminated by simple means. At least a positive plate group of the lead-acid battery includes: one or more plates each including a current collector having a current collecting portion formed by expanding or punching a lead alloy sheet manufactured by cold rolling, and one or more current collecting lug parts unitarily formed with the current collecting portion; and a strap formed by a cast-on strap casting method and coupled to the one or more current collecting lug parts. The current collecting lug part is formed with an elongated protrusion extending in a direction away from the current collecting portion. The elongated protrusion continuously extends in a direction toward the current collecting portion of the plate from inside the strap.
摘要翻译：本发明提供了一种铅酸蓄电池，其在使用中通过简单的手段消除了板的集电凸耳部分的破损风险。铅酸电池的至少一个正极板组包括：一个或多个板，每个板包括具有通过膨胀或冲压由冷轧制成的铅合金板形成的集电部的集电体，以及一个或多个集电凸耳部与集电部分一体形成; 以及通过铸造带铸造方法形成并且连接到一个或多个集流凸耳部分的带。电流收集凸耳部分形成有沿远离集流部分的方向延伸的细长突起。细长突起从带的内侧朝向板的集流部的方向连续地延伸。

16. 发明授权

US07038304B2 Semiconductor memory device and manufacturing method thereof 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US07038304B2
公开(公告)日：2006-05-02
申请号：US10895089
申请日：2004-07-21
申请人： Naoki Tsuji
发明人： Naoki Tsuji
IPC分类号： H01L23/58
CPC分类号： H01L27/11568 , H01L27/115
摘要： A semiconductor memory device includes: a silicon substrate having a main surface; n+ diffusion layers formed on the main surface of the silicon substrate distanced from each other; HDP oxide films formed on the n+ diffusion layers and deposited on the main surface so as to protrude above the main surface; an ONO film (a stacked film of an oxide film, a nitride film, and an oxide film) as a charge holding layer formed between the HDP oxide films; and a gate electrode (a polysilicon film and a doped polysilicon film) extending over the ONO film and the HDP oxide films.
摘要翻译：半导体存储器件包括：具有主表面的硅衬底; 形成在硅基板的主表面上的扩散层彼此间隔开; 形成在n + +扩散层上并沉积在主表面上以便在主表面上方突出的HDP氧化物膜; 作为在HDP氧化膜之间形成的电荷保持层的ONO膜（氧化膜，氮化物膜，氧化物膜的层叠膜）以及在ONO膜和HDP氧化物膜上延伸的栅电极（多晶硅膜和掺杂多晶硅膜）。

17. 发明授权

US06682985B2 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06682985B2
公开(公告)日：2004-01-27
申请号：US10040633
申请日：2002-01-09
申请人： Kojiro Yuzuriha , Naoki Tsuji
发明人： Kojiro Yuzuriha , Naoki Tsuji
IPC分类号： H01L2176
CPC分类号： H01L21/76235 , H01L21/31053 , H01L21/31055
摘要： A semiconductor device as well as a method of manufacturing a semiconductor device wherein a wide trench separation band is formed without causing the scooping out of the silicon substrate can be gained. The process is provided with the step of forming a multilayer film on a silicon substrate, the step of patterning the multilayer film and of etching the silicon substrate so as to create a trench, the step of forming an inner wall silicon oxide film on the inner wall surface of the trench, the step of forming a trench oxide layer so as to fill in the trench, the step of polishing the trench oxide layer through CMP polishing so as to expose the silicon nitride layer and the step of etching the trench oxide film, which has undergone the CMP polishing, by a thickness no more than the thickness of the inner wall silicon oxide film.
摘要翻译：可以获得半导体器件以及制造半导体器件的方法，其中形成宽的沟槽分离带而不会从硅衬底引出舀出。该工艺提供了在硅衬底上形成多层膜的步骤图案化多层膜和蚀刻硅衬底以形成沟槽的步骤，在沟槽的内壁表面上形成内壁氧化硅膜的步骤，形成沟槽氧化物层的步骤，以便填充沟槽，通过CMP抛光来研磨沟槽氧化物层以暴露氮化硅层和蚀刻已经经过CMP抛光的沟槽氧化膜的步骤，其厚度不大于厚度的内壁氧化硅膜。

18. 发明授权

US06469338B2 Non-volatile semiconductor memory device and manufacturing method thereof 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US06469338B2
公开(公告)日：2002-10-22
申请号：US09324808
申请日：1999-06-03
申请人： Kiyoteru Kobayashi , Naoki Tsuji
发明人： Kiyoteru Kobayashi , Naoki Tsuji
IPC分类号： H01L2994
CPC分类号： H01L27/11526 , H01L27/11521 , H01L27/11531 , H01L29/045 , H01L29/7883
摘要： A non-volatile semiconductor memory device allowing accurate reading of data, having superior charge detection characteristic and high rewriting durability, and free of undesirable writing of a non-selected memory cell transistor is provided. A memory cell transistor 100b includes a silicon substrate 1 having a main surface, a plurality of strip shaped isolating oxide films 4a and 4b formed on the main surface 1b of silicon substrate 1 to continuously extend approximately along the direction, and strip shaped source and drain regions 5b and 6b formed on the main surface 1b of silicon substrate 1 to continuously extend approximately along the direction.
摘要翻译：提供了一种非易失性半导体存储器件，其允许具有优异的电荷检测特性和高重写耐久性的数据的精确读取，并且不需要非选择性地写入未选择的存储单元晶体管。存储单元晶体管100b包括具有主表面的硅衬底1，形成在硅衬底1的主表面1b上的多个带状隔离氧化物膜4a和4b，以沿着<100>方向大致连续延伸，并且带状源极和漏极区域5b和6b形成在硅衬底1的主表面1b上，以沿着<100>方向大致连续延伸。

19. 发明授权

US4556517A Carbapenem derivatives 失效
标题翻译：卡巴培南衍生物
公开(公告)号：US4556517A
公开(公告)日：1985-12-03
申请号：US432099
申请日：1982-09-29
申请人： Kentaro Tanaka , Naoki Tsuji
发明人： Kentaro Tanaka , Naoki Tsuji
IPC分类号： C07D477/20 , C12P17/18 , C07D487/04 , A61K31/40
CPC分类号： C07D477/20 , C12P17/184
摘要： A compound of the formula: ##STR1## wherein R is carboxymethylthio, dihydroxymethylthio or hydroxymethylsulfinyl and the pharmaceutically acceptable salts being useful as a medicament and a veterinary drug for inhibiting the growth of gram-positive and gram-negative phathogenic microorganisms with .beta.-lactamase inhibitory activity and a process for preparing the same.
摘要翻译：下式的化合物：其中R是羧甲硫基，二羟基甲硫基或羟甲基亚磺酰基，其药学上可接受的盐可用作药物和用于抑制革兰氏阳性和革兰氏阴性致病微生物与β-内酰胺酶抑制生长的兽药活动及其制备方法。

20. 发明授权

US4424212A K-41.C(2) esters 失效
标题翻译： K-41.C（2）酯
公开(公告)号：US4424212A
公开(公告)日：1984-01-03
申请号：US267517
申请日：1981-05-27
申请人： Naoki Tsuji , Kazuo Nagashima
发明人： Naoki Tsuji , Kazuo Nagashima
IPC分类号： C07H15/00 , A01N43/90 , A23K20/195 , A61K31/70 , A61K31/7028 , A61P31/00 , A61P33/02 , C07H15/04 , C07H19/01 , A61K31/71 , A61K35/00
CPC分类号： C07H19/01 , A01N43/90 , A23K20/195
摘要： This invention relates to K-41.C(2) esters, miticidal compositions comprising K-41.C(2) esters and anti-coccidial compositions comprising K-41.C(2) esters.
摘要翻译：本发明涉及包含K-41.C（2）酯和包含K-41.C（2）酯的抗球虫组合物的K-41.C（2）酯，杀螨组合物。

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