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1. 发明申请

US20120064402A1 LEAD-ACID BATTERY AND METHOD FOR MANUFACTURING CURRENT COLLECTOR FOR LEAD-ACID BATTERY 有权
标题翻译：铅酸蓄电池及铅酸蓄电池电流收集器的制造方法
公开(公告)号：US20120064402A1
公开(公告)日：2012-03-15
申请号：US13047153
申请日：2011-03-14
申请人： Hiroki TSUJI , Masatoshi Miyatsuka , Kazuya Sasaki , Naoki Tsuji , Kenichi Maeda , Yoshifumi Yamada
发明人： Hiroki TSUJI , Masatoshi Miyatsuka , Kazuya Sasaki , Naoki Tsuji , Kenichi Maeda , Yoshifumi Yamada
IPC分类号： H01M4/02 , H01M6/00
CPC分类号： H01M6/005 , H01M2/266 , H01M2/305 , H01M4/73 , H01M4/742 , H01M4/745 , H01M10/06 , H01M10/12 , Y02E60/126 , Y02P70/54 , Y10T29/49108
摘要： Provided herein is a lead-acid battery for which the risk of breakage of a current collecting lug part of a plate while in use is eliminated by simple means. At least a positive plate group of the lead-acid battery includes: one or more plates each including a current collector having a current collecting portion formed by expanding or punching a lead alloy sheet manufactured by cold rolling, and one or more current collecting lug parts unitarily formed with the current collecting portion; and a strap formed by a cast-on strap casting method and coupled to the one or more current collecting lug parts. The current collecting lug part is formed with an elongated protrusion extending in a direction away from the current collecting portion. The elongated protrusion continuously extends in a direction toward the current collecting portion of the plate from inside the strap.
摘要翻译：本发明提供了一种铅酸蓄电池，其在使用中通过简单的手段消除了板的集电凸耳部分的破损风险。铅酸电池的至少一个正极板组包括：一个或多个板，每个板包括具有通过膨胀或冲压由冷轧制成的铅合金板形成的集电部的集电体，以及一个或多个集电凸耳部与集电部分一体形成; 以及通过铸造带铸造方法形成并且连接到一个或多个集流凸耳部分的带。电流收集凸耳部分形成有沿远离集流部分的方向延伸的细长突起。细长突起从带的内侧朝向板的集流部的方向连续地延伸。

2. 发明授权

US08999572B2 Lead-acid battery and method for manufacturing current collector for lead-acid battery 有权
标题翻译：铅酸蓄电池及铅酸蓄电池集电器的制造方法
公开(公告)号：US08999572B2
公开(公告)日：2015-04-07
申请号：US13047153
申请日：2011-03-14
申请人： Hiroki Tsuji , Masatoshi Miyatsuka , Kazuya Sasaki , Naoki Tsuji , Kenichi Maeda , Yoshifumi Yamada
发明人： Hiroki Tsuji , Masatoshi Miyatsuka , Kazuya Sasaki , Naoki Tsuji , Kenichi Maeda , Yoshifumi Yamada
IPC分类号： H01M4/02 , H01M6/00 , H01M2/30 , H01M2/26 , H01M4/73 , H01M4/74 , H01M10/06 , H01M10/12
CPC分类号： H01M6/005 , H01M2/266 , H01M2/305 , H01M4/73 , H01M4/742 , H01M4/745 , H01M10/06 , H01M10/12 , Y02E60/126 , Y02P70/54 , Y10T29/49108
摘要： Provided herein is a lead-acid battery for which the risk of breakage of a current collecting lug part of a plate while in use is eliminated by simple means. At least a positive plate group of the lead-acid battery includes: one or more plates each including a current collector having a current collecting portion formed by expanding or punching a lead alloy sheet manufactured by cold rolling, and one or more current collecting lug parts unitarily formed with the current collecting portion; and a strap formed by a cast-on strap casting method and coupled to the one or more current collecting lug parts. The current collecting lug part is formed with an elongated protrusion extending in a direction away from the current collecting portion. The elongated protrusion continuously extends in a direction toward the current collecting portion of the plate from inside the strap.
摘要翻译：本发明提供了一种铅酸蓄电池，其在使用中通过简单的手段消除了板的集电凸耳部分的破损风险。铅酸电池的至少一个正极板组包括：一个或多个板，每个板包括具有通过膨胀或冲压由冷轧制成的铅合金板形成的集电部的集电体，以及一个或多个集电凸耳部与集电部分一体形成; 以及通过铸造带铸造方法形成并且连接到一个或多个集流凸耳部分的带。电流收集凸耳部分形成有沿远离集流部分的方向延伸的细长突起。细长突起从带的内侧朝向板的集流部的方向连续地延伸。

3. 发明授权

US07016773B2 Control system for hybrid vehicle 有权
标题翻译：混合动力汽车控制系统
公开(公告)号：US07016773B2
公开(公告)日：2006-03-21
申请号：US10897076
申请日：2004-07-23
申请人： Shigetaka Kuroda , Takashi Kamimura , Hiroshi Murakami , Akihito Ohtsu , Kiyoshi Asami , Naoki Tsuji
发明人： Shigetaka Kuroda , Takashi Kamimura , Hiroshi Murakami , Akihito Ohtsu , Kiyoshi Asami , Naoki Tsuji
IPC分类号： B60K6/00 , B60L9/00
CPC分类号： B60W20/15 , B60K6/485 , B60K6/543 , B60L11/14 , B60W10/06 , B60W10/08 , B60W20/00 , F01L1/181 , F01L13/0036 , F01L2105/00 , F01L2800/00 , F02D13/0234 , F02D13/0257 , F02D13/0269 , F02D2041/001 , F02D2200/0625 , Y02T10/142 , Y02T10/18 , Y02T10/52 , Y02T10/56 , Y02T10/6226 , Y02T10/6286 , Y02T10/70 , Y02T10/7077
摘要： A control system for a hybrid vehicle, which enables the hybrid vehicle to optimally selectively use driven modes to attain excellent fuel economy and thereby make it possible to improve fuel economy. The hybrid vehicle is operated in an engine-driven mode or a motor-driven mode, and recovers electric energy for driving an electric motor, using the output from the engine. The control system calculates a driving fuel consumption amount of the engine required for driving the hybrid vehicle in the engine-driven mode and a recovering fuel consumption amount of the engine required for recovering electric energy to be consumed when the hybrid vehicle is driven in the motor-driven mode, and sets the driven mode to the motor-driven mode when the recovering fuel consumption amount is smaller than the driving fuel consumption amount, and to the engine-driven mode when the former is larger than the latter.
摘要翻译：一种用于混合动力车辆的控制系统，其使得混合动力车辆能够最佳地选择性地使用驱动模式以获得优异的燃料经济性，从而可以提高燃料经济性。混合动力车辆以发动机驱动模式或电动机驱动模式操作，并使用发动机的输出来恢复用于驱动电动机的电能。控制系统计算在发动机驱动模式下驱动混合动力车辆所需的发动机的驱动燃料消耗量以及当在电动机中驱动混合动力车辆时恢复要消耗的电能所需的发动机的恢复燃料消耗量并且当恢复燃料消耗量小于驱动燃料消耗量时，将驱动模式设定为电动机模式，并且当前者大于后者时，将其设定为发动机驱动模式。

4. 发明授权

US06756263B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06756263B2
公开(公告)日：2004-06-29
申请号：US10173261
申请日：2002-06-18
申请人： Naoki Tsuji
发明人： Naoki Tsuji
IPC分类号： H01L2131
CPC分类号： H01L27/11526 , H01L21/76224 , H01L21/823462 , H01L21/823481 , H01L27/115 , H01L27/11546 , Y10S438/981
摘要： A semiconductor device includes a trench isolating elements, a memory cell transistor and a peripheral circuit Vcc transistor having a thermal oxide film of a first thickness, and a peripheral circuit Vpp transistor including a thermal oxide film and a thermal oxide film formed before trench formation, having a second thickness greater than the first thickness.
摘要翻译：半导体器件包括沟槽隔离元件，存储单元晶体管和具有第一厚度的热氧化膜的外围电路Vcc晶体管，以及包括形成在沟槽形成之前的热氧化物膜和热氧化膜的外围电路Vpp晶体管，具有大于第一厚度的第二厚度。

5. 发明授权

US06657249B2 Nonvolatile semiconductor memory device with peripheral circuit part comprising at least one of two transistors having lower conductive layer same perpendicular structure as a floating gate 有权
标题翻译：具有外围电路部分的非易失性半导体存储器件包括具有与浮置栅极相同垂直结构的较低导电层的两个晶体管中的至少一个晶体管
公开(公告)号：US06657249B2
公开(公告)日：2003-12-02
申请号：US10189575
申请日：2002-07-08
申请人： Naho Nishioka , Naoki Tsuji
发明人： Naho Nishioka , Naoki Tsuji
IPC分类号： H01L29788
CPC分类号： H01L27/11526 , H01L27/105 , H01L27/11546
摘要： A nonvolatile semiconductor memory device capable of readily distinctively forming transistors in a peripheral circuit part and a transistor in a memory cell part while minimizing the number of times of high-temperature heat treatment are obtained. In the peripheral circuit part, at least one of a first transistor and a second transistor has a lower conductive layer having the same perpendicular structure as a floating gate, an intermediate insulator film including an insulator film of the same perpendicular structure as an inter-gate isolation film and an upper conductive layer of the same perpendicular structure as a conductive layer of a control gate in ascending order on a gate insulator film thereof, and the intermediate insulator film includes a conduction part electrically connecting the upper conductive layer and the lower conductive layer with each other.
摘要翻译：获得能够在最小化高温热处理次数的同时，在外围电路部分中容易地形成晶体管和存储单元部分中的晶体管的非易失性半导体存储器件。在外围电路部分中，第一晶体管和第二晶体管中的至少一个具有与浮置栅极具有相同垂直结构的下导电层，包括与栅极相同垂直结构的绝缘膜的中间绝缘膜隔离膜和与导电层相同的垂直结构的上导电层，其栅极绝缘膜上以升序排列，并且中间绝缘膜包括将上导电层和下导电层电连接的导电部分与彼此。

6. 发明授权

US06649969B2 Nonvolatile semiconductor device 有权
标题翻译：非易失性半导体器件
公开(公告)号：US06649969B2
公开(公告)日：2003-11-18
申请号：US09908895
申请日：2001-07-20
申请人： Naoki Tsuji , Akinobu Teramoto , Kazutoshi Wakao
发明人： Naoki Tsuji , Akinobu Teramoto , Kazutoshi Wakao
IPC分类号： H01L29788
CPC分类号： H01L27/11521 , H01L27/115
摘要： The invention provides a nonvolatile semiconductor device, or the like. According to the fabrication process of the present invention, silica glass containing boron or phosphorous is used as a material of high absorbency, which is treated in the vapor phase HF atmosphere and, therefore, selective etching of silica glass, only, of high absorbency becomes possible so that a void area can be formed beneath the fin of the floating gate. Accordingly, the absolute value of the parasitic capacitance between the floating gate and the substrate is decreased. In addition, the degree of the fluctuation of the parasitic capacitance due to the manufacturing process can be restricted to a low level. Accordingly, a nonvolatile semiconductor device of high performance can be gained without lowering the yield.
摘要翻译：本发明提供一种非易失性半导体器件等。根据本发明的制造方法，使用含有硼或磷的二氧化硅玻璃作为吸收性高的材料，其在气相HF气氛中进行处理，因此，只有具有高吸收性的石英玻璃的选择性蚀刻成为可能使浮动栅极的鳍下方形成空隙区域。因此，浮置栅极和衬底之间的寄生电容的绝对值减小。此外，由于制造过程而引起的寄生电容的波动程度可以被限制在低的水平。因此，可以获得高性能的非易失性半导体器件而不降低产量。

7. 发明授权

US4371617A Process for preparing thienamycin 失效
标题翻译：硫霉素制备方法
公开(公告)号：US4371617A
公开(公告)日：1983-02-01
申请号：US244857
申请日：1981-03-18
申请人： Kentaro Tanaka , Naoki Tsuji , Eiji Kondo , Yoshimi Kawamura
发明人： Kentaro Tanaka , Naoki Tsuji , Eiji Kondo , Yoshimi Kawamura
IPC分类号： C12N1/20 , C12P17/18 , C12R1/465
CPC分类号： C12R1/465 , C12P17/184 , Y10S435/886
摘要： A new process for preparing thienamycin, a known antibiotic useful as a medicament and veterinary drug, characterized by cultivating Streptomyces penemifaciens sp. nov. in a suitable medium and recovering thienamycin from the fermentation broth.
摘要翻译：一种制备硫辛霉素的新方法，已知的可用作药物和兽药的抗生素，其特征在于培养长链短杆菌（Streptomyces penemifaciens sp。 nov。在合适的培养基中并从发酵液中回收噻吩霉素。

8. 发明授权

US06985042B2 Magnetron 有权
标题翻译：磁控管
公开(公告)号：US06985042B2
公开(公告)日：2006-01-10
申请号：US10658411
申请日：2003-09-10
申请人： Hideyuki Obata , Naoki Tsuji
发明人： Hideyuki Obata , Naoki Tsuji
IPC分类号： H03B9/10
CPC分类号： H03B9/10 , H01J23/10 , H01J25/587
摘要： The object to the present invention is to provide a magnetron which can reduce spurious oscillation such as the π−1 mode which presents a problem particularly in magnetrons and can reduce spurious radiations without placing filters. The magnetron of the present invention includes an anode 1 formed by plural vanes 12 in such a manner that inner ends 12 are radially extended toward the center of the anode shell 11 from the inner wall of a cylindrical anode shell, and a cathode 2 provided at the center of the anode 1. The magnetron of the present invention further includes a pair of pole pieces 4 provided in such a manner that a magnetic field can be applied on the interaction space 2 where the inner ends 12a of the vanes 12 and the cathode 2 face with each other. At least one of the pair of pole pieces is provided in such a manner that in a range A at least ⅓ of the vane length L from the inner end 12a of the vane, the distance B between the side surfaces 12b of the vanes and the surface 4b adjacent the inner end 4a of the pole pieces 4 is within 0.015 λ wherein λ is the oscillation wavelength of the magnetron, and said vane length is a distance from said one end to said inner end.
摘要翻译：本发明的目的是提供一种可以减少诸如pi-1模式的寄生振荡的磁控管，其特别是在磁控管中存在问题，并且可以在不放置过滤器的情况下减少杂散辐射。本发明的磁控管包括由多个叶片12形成的阳极1，内部端部12从圆柱形阳极壳体的内壁向阳极壳体11的中心径向延伸，阴极2设置在阳极的中心1。本发明的磁控管还包括一对磁极片4，其以这样一种方式设置，使得可以将磁场施加在相互作用空间2上，其中叶片12和阴极2的内端部12a相互面对。一对极片中的至少一个以这样的方式设置，使得在从叶片的内端12a的叶片长度L的至少1/3的范围A中，侧面12b之间的距离B 叶片和邻近极片4的内端4a的表面4b在0.015λ之内，其中λ是磁控管的振荡波长，并且所述叶片长度是从所述一端到所述内端的距离。

9. 发明授权

US06441444B1 Semiconductor device having a nitride barrier for preventing formation of structural defects 失效
标题翻译：具有用于防止形成结构缺陷的氮化物屏障的半导体器件
公开(公告)号：US06441444B1
公开(公告)日：2002-08-27
申请号：US09352401
申请日：1999-07-14
申请人： Naoki Tsuji , Kiyoteru Kobayashi
发明人： Naoki Tsuji , Kiyoteru Kobayashi
IPC分类号： H01L2976
CPC分类号： H01L21/8234 , H01L21/76224
摘要： Providing a method of producing a semiconductor device and a structure of the semiconductor device employing a trench isolation structure for isolating semiconductor elements wherein volumetric expansion of a trench-filling material due to oxidation process after forming the trench isolation structure is controlled thereby making it possible to prevent deterioration of the electrical characteristics of the semiconductor device. A nitriding treatment is applied to the trench surface of the silicon substrate after forming the trench by etching, thereby to form a thin nitride layer having a better effect of preventing oxidation in the interface of silicon.
摘要翻译：提供一种制造半导体器件的方法和使用用于隔离半导体元件的沟槽隔离结构的半导体器件的结构，其中控制在形成沟槽隔离结构之后由于氧化处理引起的沟槽填充材料的体积膨胀，从而使得可以防止半导体器件的电特性劣化。在通过蚀刻形成沟槽之后，对硅衬底的沟槽表面进行氮化处理，从而形成具有更好的防止硅界面中的氧化的效果的薄氮化物层。

10. 发明授权

US5071749A Glycopetide antibiotic PA-45052-B 失效
标题翻译： GLYCOPETIDE抗生素PA-45052-B
公开(公告)号：US5071749A
公开(公告)日：1991-12-10
申请号：US174449
申请日：1988-03-25
申请人： Eiji Kondo , Yoshimi Kawamura , Naoki Tsuji , Koichi Matsumoto , Masaaki Kobayashi , Toshiyuki Kamigauchi , Yoshiyuki Hayashi , Takao Konishi
发明人： Eiji Kondo , Yoshimi Kawamura , Naoki Tsuji , Koichi Matsumoto , Masaaki Kobayashi , Toshiyuki Kamigauchi , Yoshiyuki Hayashi , Takao Konishi
IPC分类号： C07K9/00 , C12P21/04
CPC分类号： C07K9/008
摘要： Glycopeptide antibiotics PA-45052 which are produced by Nocardia orientalis PA-45052, show potent activity against gram-positive bacteria, especially against methicillin-resistant bacteria, and stimulate growth of animals.

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