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11. 发明授权

US07544985B2 Semiconductor capacitor structure and method for manufacturing the same 有权
标题翻译：半导体电容器结构及其制造方法
公开(公告)号：US07544985B2
公开(公告)日：2009-06-09
申请号：US11312952
申请日：2005-12-19
申请人： Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
发明人： Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
IPC分类号： H01L27/108
CPC分类号： H01L27/10852 , H01L27/10817 , H01L28/91
摘要： In one embodiment, a semiconductor device comprises a base and a tapered wall formed on the base. The wall has a midline and also has an inner sidewall and an outer sidewall. The inner sidewall and the outer sidewall are substantially symmetrical with each other in relation to the midline. Thus, the reliability of the semiconductor capacitor structure can be improved and the throughput can be increased. Also, further scaling down of semiconductor devices can be facilitated with the principles of the present invention.
摘要翻译：在一个实施例中，半导体器件包括形成在基底上的基部和锥形壁。壁具有中线并且还具有内侧壁和外侧壁。内侧壁和外侧壁相对于中线彼此基本对称。因此，可以提高半导体电容器结构的可靠性，并且可以提高吞吐量。此外，根据本发明的原理，可以促进半导体器件的进一步缩小。

12. 发明申请

US20090023265A1 ETCHING SOLUTION FOR REMOVAL OF OXIDE FILM, METHOD FOR PREPARING THE SAME, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于除去氧化膜的蚀刻溶液，其制备方法和制备半导体器件的方法
公开(公告)号：US20090023265A1
公开(公告)日：2009-01-22
申请号：US12243728
申请日：2008-10-01
申请人： CHANG-SUP MUN , Hyung-Ho Ko , Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi
发明人： CHANG-SUP MUN , Hyung-Ho Ko , Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi
IPC分类号： H01L21/762 , H01L21/306 , H01L21/02
CPC分类号： H01L21/31111 , H01L21/76224 , H01L28/40
摘要： Provided are an anionic surfactant-containing etching solution for removal of an oxide film, preparation methods thereof, and methods of fabricating a semiconductor device using the etching solution. The etching solution includes a hydrofluoric acid (HF), deionized water, and an anionic surfactant. The anionic surfactant is a compound in which an anime salt is added as a counter ion, as represented by R1—OSO3−HA+, R1—CO2−HA+,R1—PO42—(HA+)2,(R1)2—PO4—HA+, or R1—SO3—HA+ where R1 is a straight or branched hydrocarbon group of C4 to C22 and A is ammonia or amine. The etching solution provides a high etching selectivity ratio of an oxide film to a nitride film or a polysilicon film. Therefore, in a semiconductor device fabrication process such as a STI device isolation process or a capacitor formation process, when an oxide film is exposed together with a nitride film or a polysilicon film, the etching solution can be efficiently used in selectively removing only the oxide film.
摘要翻译：提供了一种用于去除氧化膜的含阴离子表面活性剂的蚀刻溶液，其制备方法以及使用该蚀刻溶液制造半导体器件的方法。蚀刻溶液包括氢氟酸（HF），去离子水和阴离子表面活性剂。阴离子表面活性剂是其中以R1-OSO3-HA +，R1-CO2-HA +，R1-PO42-（HA +）2，（R1）2-PO4-HA + 或R1-SO3-HA +，其中R1是C4至C22的直链或支链烃基，A是氨或胺。蚀刻溶液提供氧化膜与氮化物膜或多晶硅膜的高蚀刻选择性比。因此，在诸如STI器件隔离处理或电容器形成工艺的半导体器件制造工艺中，当氧化物膜与氮化物膜或多晶硅膜一起暴露时，可以有效地使用蚀刻溶液来仅选择性地除去氧化物电影。

13. 发明申请

US20050026420A1 Method of manufacturing a semiconductor device using a polysilicon etching mask 失效
标题翻译：使用多晶硅蚀刻掩模制造半导体器件的方法
公开(公告)号：US20050026420A1
公开(公告)日：2005-02-03
申请号：US10818266
申请日：2004-04-02
申请人： Jeong-Nam Han , Woo-Gwan Shim , Woo-Sung Han , Chang-Ki Hong , Sang-Jun Choi
发明人： Jeong-Nam Han , Woo-Gwan Shim , Woo-Sung Han , Chang-Ki Hong , Sang-Jun Choi
IPC分类号： H01L21/28 , H01L21/311 , H01L21/3213 , H01L21/60 , H01L21/768 , H01L23/485 , H01L21/44 , H01L21/50 , H01L21/8222
CPC分类号： H01L21/76897 , H01L21/31144 , H01L21/32134 , H01L21/32137 , H01L21/76802 , H01L23/485 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device using a polysilicon layer as an etching mask includes: (a) forming an interlayer dielectric over a semiconductor substrate; (b) forming a polysilicon layer pattern over the interlayer dielectric; (c) forming a contact hole in the interlayer dielectric by etching the interlayer dielectric using the polysilicon layer pattern as an etching mask; (d) removing the polysilicon layer pattern by an etching process that has a large etching selectivity of the polisilicon layer with respect to the interlayer dielectric and about 3% or less etching uniformity; and (e) forming a contact by filling the contact hole with a conductive material.
摘要翻译：使用多晶硅层作为蚀刻掩模制造半导体器件的方法包括：（a）在半导体衬底上形成层间电介质; （b）在层间电介质上形成多晶硅层图案; （c）通过使用多晶硅层图案作为蚀刻掩模蚀刻层间电介质，在层间电介质中形成接触孔; （d）通过蚀刻工艺去除多晶硅层图案，所述蚀刻工艺对于硅酸盐层相对于层间电介质具有大的蚀刻选择性，蚀刻均匀性为约3％以下; 和（e）通过用导电材料填充接触孔来形成接触。

14. 发明申请

US20060097410A1 Semiconductor capacitor structure and method for manufacturing the same 有权
公开(公告)号：US20060097410A1
公开(公告)日：2006-05-11
申请号：US11312952
申请日：2005-12-19
申请人： Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
发明人： Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
IPC分类号： H01L23/58
CPC分类号： H01L27/10852 , H01L27/10817 , H01L28/91
摘要： In one embodiment, a semiconductor device comprises a base and a tapered wall formed on the base. The wall has a midline and also has an inner sidewall and an outer sidewall. The inner sidewall and the outer sidewall are substantially symmetrical with each other in relation to the midline. Thus, the reliability of the semiconductor capacitor structure can be improved and the throughput can be increased. Also, further scaling down of semiconductor devices can be facilitated with the principles of the present invention.

15. 发明授权

US07018892B2 Semiconductor capacitor structure and method for manufacturing the same 有权
公开(公告)号：US07018892B2
公开(公告)日：2006-03-28
申请号：US10835142
申请日：2004-04-28
申请人： Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
发明人： Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L27/10852 , Y10S438/978
摘要： In one embodiment, a semiconductor device comprises a base and a tapered wall formed on the base. The wall has a midline and also has an inner sidewall and an outer sidewall. The inner sidewall and the outer sidewall are substantially symmetrical with each other in relation to the midline. Thus, the reliability of the semiconductor capacitor structure can be improved and the throughput can be increased. Also, further scaling down of semiconductor devices can be facilitated with the principles of the present invention.

16. 发明授权

US07122478B2 Method of manufacturing a semiconductor device using a polysilicon etching mask 失效
标题翻译：使用多晶硅蚀刻掩模制造半导体器件的方法
公开(公告)号：US07122478B2
公开(公告)日：2006-10-17
申请号：US10818266
申请日：2004-04-02
申请人： Jeong-Nam Han , Woo-Gwan Shim , Woo-Sung Han , Chang-Ki Hong , Sang Jun Choi
发明人： Jeong-Nam Han , Woo-Gwan Shim , Woo-Sung Han , Chang-Ki Hong , Sang Jun Choi
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/76897 , H01L21/31144 , H01L21/32134 , H01L21/32137 , H01L21/76802 , H01L23/485 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device using a polysilicon layer as an etching mask includes: (a) forming an interlayer dielectric over a semiconductor substrate; (b) forming a polysilicon layer pattern over the interlayer dielectric; (c) forming a contact hole in the interlayer dielectric by etching the interlayer dielectric using the polysilicon layer pattern as an etching mask; (d) removing the polysilicon layer pattern by an etching process that has a large etching selectivity of the polisilicon layer with respect to the interlayer dielectric and about 3% or less etching uniformity; and (e) forming a contact by filling the contact hole with a conductive material.
摘要翻译：使用多晶硅层作为蚀刻掩模制造半导体器件的方法包括：（a）在半导体衬底上形成层间电介质; （b）在层间电介质上形成多晶硅层图案; （c）通过使用多晶硅层图案作为蚀刻掩模蚀刻层间电介质，在层间电介质中形成接触孔; （d）通过蚀刻工艺去除多晶硅层图案，所述蚀刻工艺对于硅酸盐层相对于层间电介质具有大的蚀刻选择性，蚀刻均匀性为约3％以下; 和（e）通过用导电材料填充接触孔来形成接触。

17. 发明申请

US20060183297A1 Etching solution for removal of oxide film, method for preparing the same, and method of fabricating semiconductor device 审中-公开
标题翻译：用于去除氧化膜的蚀刻溶液，其制备方法以及制造半导体器件的方法
公开(公告)号：US20060183297A1
公开(公告)日：2006-08-17
申请号：US11130030
申请日：2005-05-16
申请人： Chang-Sup Mun , Hyung-Ho Ko , Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi
发明人： Chang-Sup Mun , Hyung-Ho Ko , Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi
IPC分类号： H01L21/30 , H01L21/302 , H01L21/46
CPC分类号： H01L21/31111 , H01L21/76224 , H01L28/40
摘要： Provided are an anionic surfactant-containing etching solution for removal of an oxide film, preparation methods thereof, and methods of fabricating a semiconductor device using the etching solution. The etching solution includes a hydrofluoric acid (HF), deionized water, and an anionic surfactant. The anionic surfactant is a compound in which an anime salt is added as a counter ion, as represented by R1—OSO3−HA+, R1—CO2−HA+, R1—PO42−(HA+)2, (R1)2—PO4−HA+, or R1—SO3−HA+ where R1 is a straight or branched hydrocarbon group of C4 to C22 and A is ammonia or amine. The etching solution provides a high etching selectivity ratio of an oxide film to a nitride film or a polysilicon film. Therefore, in a semiconductor device fabrication process such as a STI device isolation process or a capacitor formation process, when an oxide film is exposed together with a nitride film or a polysilicon film, the etching solution can be efficiently used in selectively removing only the oxide film.
摘要翻译：提供了一种用于去除氧化膜的含阴离子表面活性剂的蚀刻溶液，其制备方法以及使用该蚀刻溶液制造半导体器件的方法。蚀刻溶液包括氢氟酸（HF），去离子水和阴离子表面活性剂。阴离子表面活性剂是其中加入作为抗衡离子的动物盐的化合物，如R 1〜N 3 O 3 - R 1，R 2，R 1，R 1，...，R 1，（R 1）2 - - - - - （4）其中R 1，R 2， / SUB>）2 + 或其中R 1是C 4的直链或支链烃基，其中R 1是直链或支链C 1 -C 4烷基， C 22和A是氨或胺。蚀刻溶液提供氧化膜与氮化物膜或多晶硅膜的高蚀刻选择性比。因此，在诸如STI器件隔离处理或电容器形成工艺的半导体器件制造工艺中，当氧化物膜与氮化物膜或多晶硅膜一起暴露时，可以有效地使用蚀刻溶液来仅选择性地除去氧化物电影。

18. 发明申请

US20050074948A1 Method of manufacturing shallow trench isolation structure using HF vapor etching process 审中-公开
标题翻译：使用HF蒸汽蚀刻工艺制造浅沟槽隔离结构的方法
公开(公告)号：US20050074948A1
公开(公告)日：2005-04-07
申请号：US10949426
申请日：2004-09-24
申请人： Hyung-Ho Ko , Woo-Gwan Shim , Yu-Kyung Kim , Chang-Ki Hong , Sang-Jun Choi
发明人： Hyung-Ho Ko , Woo-Gwan Shim , Yu-Kyung Kim , Chang-Ki Hong , Sang-Jun Choi
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76224
摘要： In a method of manufacturing a shallow trench isolation (STI) structure using a HF vapor etching process according to some embodiments of the invention, a trench is formed in a semiconductor substrate. A buffer layer and a first insulating layer, which fill the trench, are formed. A portion of the first insulating layer is removed by performing an etching process using HF vapor, thereby removing a void existing in the first insulating layer. A second insulating layer filling the trench is formed on the etched first insulating layer. Other embodiments of the invention are described and claimed.
摘要翻译：在根据本发明的一些实施例的使用HF蒸汽蚀刻工艺制造浅沟槽隔离（STI）结构的方法中，在半导体衬底中形成沟槽。形成填充沟槽的缓冲层和第一绝缘层。通过使用HF蒸气进行蚀刻处理来去除第一绝缘层的一部分，从而去除存在于第一绝缘层中的空隙。在蚀刻的第一绝缘层上形成填充沟槽的第二绝缘层。描述和要求保护本发明的其它实施例。

19. 发明授权

US07879735B2 Cleaning solution for silicon surface and methods of fabricating semiconductor device using the same 有权
标题翻译：硅表面清洗液及使用其制造半导体器件的方法
公开(公告)号：US07879735B2
公开(公告)日：2011-02-01
申请号：US11656470
申请日：2007-01-23
申请人： Sang-Yong Kim , Chang-Ki Hong , Woo-Gwan Shim
发明人： Sang-Yong Kim , Chang-Ki Hong , Woo-Gwan Shim
IPC分类号： H01L21/302
CPC分类号： H01L21/02063
摘要： A cleaning solution and methods of fabricating semiconductor devices using the same are provided. A cleaning solution used for cleaning a silicon surface and methods of fabricating a semiconductor device using the same are also provided. The cleaning solution may include 0.01 to 1 wt % of fluoric acid, 20 to 50 wt % of oxidizer and 50 to 80 wt % of water. The cleaning solution may further include 1 to 20 wt % of acetic acid. The cleaning solution may be used to clean a silicon surface exposed during fabrication processes of a semiconductor device. The cleaning solution may reduce damage of other material layers (e.g., a tungsten layer or a silicon oxide layer) and enable the silicon surface to be selectively etched.
摘要翻译：提供一种清洁溶液和使用其制造半导体器件的方法。还提供了用于清洁硅表面的清洁溶液以及使用其制造半导体器件的方法。清洗液可以含有0.01〜1重量％的氟酸，20〜50重量％的氧化剂和50〜80重量％的水。清洗溶液还可以含有1〜20重量％的乙酸。清洁溶液可用于清洁在半导体器件的制造工艺期间暴露的硅表面。清洁溶液可以减少其它材料层（例如，钨层或氧化硅层）的损伤，并且能够选择性地蚀刻硅表面。

20. 发明授权

US07449417B2 Cleaning solution for silicon surface and methods of fabricating semiconductor device using the same 有权
标题翻译：硅表面清洗液及使用其制造半导体器件的方法
公开(公告)号：US07449417B2
公开(公告)日：2008-11-11
申请号：US11489494
申请日：2006-07-20
申请人： Sang-Yong Kim , Chang-Ki Hong , Woo-Gwan Shim
发明人： Sang-Yong Kim , Chang-Ki Hong , Woo-Gwan Shim
IPC分类号： H01L21/461
CPC分类号： C11D11/0047 , C11D7/02 , C11D7/08 , C11D7/10 , C11D7/265 , H01L21/02057 , H01L21/02063
摘要： There are provided a cleaning solution for a silicon surface containing a buffer solution including acetic acid (CH3COOH) and ammonium acetate (CH3COONH4), iodine oxidizer, hydrofluoric acid (HF), and water. In a method for fabricating a semiconductor device, a silicon substrate may have an exposed silicon surface, which may be cleaned using a cleaning solution that contains a buffer solution including acetic acid and ammonium acetate, iodine oxidizer, hydrofluoric acid, and water.
摘要翻译：提供了含有含有乙酸（CH 3 COOH）和乙酸铵（CH 3 COCO 4）的缓冲溶液的硅表面的清洗溶液 >），碘氧化剂，氢氟酸（HF）和水。在制造半导体器件的方法中，硅衬底可以具有暴露的硅表面，其可以使用包含含有乙酸和乙酸铵，碘氧化剂，氢氟酸和水的缓冲溶液的清洁溶液进行清洁。

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