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11. 发明申请

WO1995016566A1 METHOD FOR EPITAXIAL LIFT-OFF FOR OXIDE FILMS AND RESULTANT STRUCTURES 审中-公开
标题翻译：用于氧化膜和结构结构的外延起飞的方法
公开(公告)号：WO1995016566A1
公开(公告)日：1995-06-22
申请号：PCT/US1994014379
申请日：1994-12-12
申请人： SUPERCONDUCTOR TECHNOLOGIES, INC.
发明人： SUPERCONDUCTOR TECHNOLOGIES, INC. , EDDY, Michael, M.
IPC分类号： B32B31/24
CPC分类号： C04B35/45 , C04B35/62218 , G02F1/0027 , H01L39/2422 , Y10S117/915
摘要： A method utilizing layered copper oxide release materials to separate oxide films from the growth substrates. The method of forming free standing oxide films comprises the steps of: first forming a copper oxide release material, (12), such as a high temperature superconductor, YBCO, on a growth substrate (10), such as LaAlO3, second, forming an oxide film, (14) on the copper oxide release material, and third, preferentially etching away the copper oxide release material (12) to separate the oxide film (14) from the substrate (10). The oxide film (14) can be a ferroelectric or an optical material, or a material that is compatible with further high temperature superconductor growth, such as SrTiO3 or CeO2.
摘要翻译：一种利用层状氧化铜释放材料从生长衬底分离氧化膜的方法。形成自立式氧化膜的方法包括以下步骤：首先在生长衬底（10）上形成氧化铜释放材料（12），例如高温超导体（YBCO），如LaAlO 3，其次形成在氧化铜剥离材料上形成氧化膜（14），第三，优选蚀刻掉氧化铜释放材料（12）以将氧化物膜（14）与衬底（10）分离。氧化膜（14）可以是铁电体或光学材料，或者与进一步的高温超导体生长相容的材料，例如SrTiO 3或CeO 2。

12. 发明申请

WO1992019786A1 FABRICATION PROCESS FOR LOW LOSS METALLIZATIONS ON SUPERCONDUCTING THIN FILM DEVICES 审中-公开
标题翻译：超薄膜薄膜装置的低损耗金属化制造工艺
公开(公告)号：WO1992019786A1
公开(公告)日：1992-11-12
申请号：PCT/US1992003827
申请日：1992-05-08
申请人： SUPERCONDUCTOR TECHNOLOGIES, INC.
发明人： SUPERCONDUCTOR TECHNOLOGIES, INC. , OLSON, William, Levin , ZUCK, Betty, Florence , SKOGLUND, David, Lee , SCHAREN, Michael, James
IPC分类号： C23C14/04
CPC分类号： H01L39/2474 , C23C14/021
摘要： A method effectively produces patterned metal contacts (34) on a substrate (30) covered with a high temperature superconducting film (32) having good mechanical and electrical properties, especially adhesion and contact resistance, without degrading the microwave properties of the film. In the preferred embodiment, the superconducting film surface is cleaned by chemical etching, preferably with a dilute solution of bromine in methanol. Metal, preferably gold is deposited on the superconductor, preferably by sputtering. After the metal is deposited, it may be optionally patterned utilizing conventional lithographic techniques. Effective metallizations have been made on thallium-containing and YBCO superconductors. Devices result having good adhesion and contact resistance less than or equal to 5 x 10 ohm cm at 77K. Subsequent annealing reduces contact resistance to less than 1 x 10 ohm cm .
摘要翻译：一种方法在具有良好的机械和电学性能，特别是粘合和接触电阻的高温超导膜（32）覆盖的基板（30）上有效地产生图案化金属接触（34），而不降低膜的微波特性。在优选实施例中，通过化学蚀刻来清洁超导膜表面，优选用溴在甲醇中的稀溶液进行清洗。金属，优选金沉积在超导体上，优选通过溅射沉积。在沉积金属之后，可以使用常规的光刻技术任选地图案化。对含铊和YBCO超导体进行了有效的金属化。在77K下，具有良好的附着力和接触电阻的器件的结果小于或等于5×10 -6Ωhm2。随后的退火将接触电阻降低到小于1×10 -8Ωhm2。

13. 发明申请

WO1996021129A1 TEMPERATURE CONTROLLING CRYOGENIC PACKAGE SYSTEM 审中-公开
标题翻译：温度控制低温包装系统
公开(公告)号：WO1996021129A1
公开(公告)日：1996-07-11
申请号：PCT/US1995016921
申请日：1995-12-26
申请人： SUPERCONDUCTOR TECHNOLOGIES, INC.
发明人： SUPERCONDUCTOR TECHNOLOGIES, INC. , ROHLFING, Stephan, M. , FORSE, Roger, J. , SCHAREN, Michael, J. , KUNIMOTO, Wallace
IPC分类号： F25B29/00
CPC分类号： G05D23/1912 , H01L39/04 , H01L2924/0002 , H01L2924/00
摘要： A temperature controlled cryogenic package system (6) for efficiently and precisely monitoring and controlling the operating temperature of a high temperature superconductor circuit (10) placed on a substrate (8). The cryogenic package system (6) comprises a heating element (22) formed on the same substrate (8), a control circuit (24) capable of activating and deactivating the heating element (22), and a temperature sensor (38) placed in thermal proximity to the high temperature superconductor circuit (10). The temperature sensor (38) monitors the operating temperature of the high temperature superconductor circuit (10), and conveys temperature information to the control circuit (24). The control circuit (24) activates or deactivates the heating element (22) according to the warming or cooling effect that is necessary in order to maintain the high temperature superconductor circuit (10) within a predetermined temperature range, where the range of temperature fluctuation is within plus or minus 0.1 K of a predetermined temperature.
摘要翻译：一种温度控制低温封装系统（6），用于有效且精确地监测和控制放置在基板（8）上的高温超导体电路（10）的工作温度。低温包装系统（6）包括形成在同一基板（8）上的加热元件（22），能够激活和去激活加热元件（22）的控制电路（24）和置于热接近高温超导体电路（10）。温度传感器（38）监视高温超导体电路（10）的工作温度，并将温度信息传送给控制电路（24）。控制电路（24）根据为了将高温超导体电路（10）保持在预定的温度范围所需要的升温或冷却效果而激活或去激活加热元件（22），其中温度波动范围为在正负0.1K的预定温度下。

14. 发明申请

WO1996012055A1 APPARATUS FOR GROWING METAL OXIDES USING ORGANOMETALLIC VAPOR PHASE EPITAXY 审中-公开
标题翻译：使用有机蒸气相外延生长金属氧化物的装置
公开(公告)号：WO1996012055A1
公开(公告)日：1996-04-25
申请号：PCT/US1994011791
申请日：1994-10-17
申请人： SUPERCONDUCTOR TECHNOLOGIES, INC.
发明人： SUPERCONDUCTOR TECHNOLOGIES, INC. , SMITH, Eric, Jeffrey , DENBAARS, Steven, P. , NILSSON, Boo, J., L.
IPC分类号： C30B25/02
CPC分类号： C30B25/02 , C30B29/22 , Y10T117/10
摘要： The methods and apparatus disclosed enable controlled growth of multicomponent metal oxide thin films, including high temperature superconducting (HTS) thin films, which are uniform and reproducible. The method and apparatus enable a controlled flow and pressure of a gaseous phase of metal containing molecules to be introduced into a reaction chamber, or into an analysis chamber, or into both. The flow into the reaction chamber enables deposition of metal oxides on a substrate and, therefore, growth of multicomponent metal oxide thin films, including HTS thin films, on the substrate. The flow into the analysis chamber enables compositional analysis of the gas. The apparatus also allows adjustment of the gaseous phase flow and pressure into the reaction chamber based upon the results of the compositional analysis. In one aspect of this invention, a heating mantle provides substantially uniform heating throughout the apparatus.
摘要翻译：所公开的方法和装置使得能够控制生长多组分金属氧化物薄膜，包括高温超导（HTS）薄膜，其均匀且可再现。该方法和装置使得能够将含有金属的分子的气相的受控流和压力引入反应室或分析室中，或者进入二者。进入反应室的流动使金属氧化物沉积在基板上，并因此在衬底上生长多组分金属氧化物薄膜，包括HTS薄膜。进入分析室的流动可以对气体进行组合分析。该装置还允许基于组成分析的结果将气相流和压力调节到反应室中。在本发明的一个方面，加热套在整个装置中提供基本均匀的加热。

15. 发明申请

WO1994028627A1 HIGH TEMPERATURE SUPERCONDUCTOR LUMPED ELEMENTS AND CIRCUIT 审中-公开
标题翻译：高温超导体元器件和电路
公开(公告)号：WO1994028627A1
公开(公告)日：1994-12-08
申请号：PCT/US1994005577
申请日：1994-05-18
申请人： SUPERCONDUCTOR TECHNOLOGIES, INC.
发明人： SUPERCONDUCTOR TECHNOLOGIES, INC. , HEY-SHIPTON, Gregory, L. , FORSE, Roger, J. , SKOGLUND, David, L.
IPC分类号： H03H07/01
CPC分类号： H01F17/0006 , H01F6/06 , H01F2017/0046 , H01F2027/2861 , H03H1/00 , H03H2/00 , H03H7/0115 , H03H7/03 , H03H7/075 , H03H2001/0071 , H03H2001/0078 , H03H2001/0085 , Y10S336/01 , Y10S505/70 , Y10S505/701 , Y10S505/705 , Y10S505/866
摘要： Lumped element electrical components, such as inductors (24, 42, 52, 64, 74, 84, 92) and capacitors (22, 26, 44, 50, 60, 70, 80, 90), are formed to include high temperature superconducting materials. In the preferred embodiment, thin film epitaxial high temperature superconductors are patterned to form capacitors and inductors on low loss substrates. Preferably, a high temperature superconducting material or highly conductive material forms the ground plane on the back side of the substrate. Various inductor structures include a planar spiral (24), a zig-zag serpentine (42), a single coil (74), and a double coil (52, 64, 84, 92, 98). Narrow bandpass filters and high Q resonators are formed.
摘要翻译：集成元件电气部件，例如电感器（24,42,52,64,74,84,92）和电容器（22,26,44,50,60,70,80,90）形成为包括高温超导材料。在优选实施例中，薄膜外延高温超导体被图案化以在低损耗衬底上形成电容器和电感器。优选地，高温超导材料或高导电材料在衬底的背面形成接地平面。各种电感器结构包括平面螺旋（24），之字形蛇形（42），单个线圈（74）和双线圈（52,64,84,92,98）。形成窄带通滤波器和高Q谐振器。

16. 发明申请

WO1994002862A1 SUPERCONDUCTOR THIN FILM CROSSOVERS AND METHOD 审中-公开
标题翻译：超级电容薄膜碎屑机和方法
公开(公告)号：WO1994002862A1
公开(公告)日：1994-02-03
申请号：PCT/US1993006687
申请日：1993-07-15
申请人： SUPERCONDUCTOR TECHNOLOGIES, INC.
发明人： SUPERCONDUCTOR TECHNOLOGIES, INC. , SMITH, Eric, Jeffrey , EDDY, Michael, Martin
IPC分类号： G01R33/02
CPC分类号： H01L39/249
摘要： A method for providing a buried insulator (24, 25) in a high temperature superconductor (30) is disclosed. In the preferred method, a single layer high temperature superconductor (30) is subjected to ion implantation. In one embodiment, the method is used to provide a crossover in a single layer high temperature superconductor (30). This crossover can be used in a variety of devices and instrumentations such as, for example, antennas and pickup coils, detector electronic leads, multi-chip modules, SQUIDs, microwave components and integrated semiconductor-superconductor devices.
摘要翻译：公开了一种在高温超导体（30）中提供掩埋绝缘体（24,25）的方法。在优选的方法中，对单层高温超导体（30）进行离子注入。在一个实施例中，该方法用于在单层高温超导体（30）中提供交叉。该交叉可用于各种设备和仪器，例如天线和拾取线圈，检测器电子引线，多芯片模块，SQUID，微波元件和集成半导体 - 超导体器件。

17. 发明申请

WO1992015406A1 DEVICES FROM AND METHOD FOR PRODUCING CRYSTALLOGRAPHIC BOUNDARY JUNCTIONS IN SUPERCONDUCTING THIN FILMS 审中-公开
标题翻译：在超薄膜中制造晶体间界面结构的装置和方法
公开(公告)号：WO1992015406A1
公开(公告)日：1992-09-17
申请号：PCT/US1992001444
申请日：1992-02-24
申请人： SUPERCONDUCTOR TECHNOLOGIES, INC.
发明人： SUPERCONDUCTOR TECHNOLOGIES, INC. , JAMES, Timothy, Walton , FLEMING, Julia, Sophia
IPC分类号： B05D05/12
CPC分类号： H01L39/225 , H01L39/2496 , Y10S505/701 , Y10S505/702 , Y10S505/728 , Y10S505/732
摘要： Devices from and a method for generating repeatable and reproducible crystallographic grain-boundary junctions are provided by forming a film on a crystalline substrate which has intersecting faces. In a preferred embodiment, a single crystal substrate (10) is etched by an anisotropic etchant to provide a ''V''-groove in one face, and an epitaxial superconducting film (16) is grown on the faces (14) of the V-groove. In another preferred embodiment, a step is etched with an anisotropic etch, and an epitaxial superconducting film grown on the step. Grain-boundary junctions are formed at the points (20) of intersection of the faces with each other, or with the faces (18) and the surface of the substrate. The film may be patterned and etched in the area of the boundary junction to form useful devices. One useful device is a SQUID formed with the boundary junction at the bottom of a V-groove. Another useful device is serially connected junctions.
摘要翻译：通过在具有相交面的晶体衬底上形成膜来提供用于产生可重复和可再现的结晶晶界结的装置和方法。在优选实施例中，通过各向异性蚀刻剂对单晶衬底（10）进行蚀刻，以在一个面中提供“V”形槽，并且外延超导膜（16）生长在 V形槽。在另一优选实施例中，通过各向异性蚀刻蚀刻步骤，并在该步骤上生长外延超导膜。在面彼此相交的点（20）处，或者与面（18）和衬底的表面相交的点（20）处形成晶界结。该膜可以在边界结的区域中被图案化和蚀刻以形成有用的装置。一个有用的装置是在V形槽的底部形成边界结的SQUID。另一个有用的装置是串联的连接点。

18. 发明申请

WO1992006798A1 IN SITU GROWTH OF SUPERCONDUCTING FILMS 审中-公开
标题翻译：超级电容器的增长
公开(公告)号：WO1992006798A1
公开(公告)日：1992-04-30
申请号：PCT/US1991007381
申请日：1991-10-03
申请人： SUPERCONDUCTOR TECHNOLOGIES, INC.
发明人： SUPERCONDUCTOR TECHNOLOGIES, INC. , JAMES, Timothy, Walton , NILSSON, Boo, Jorten, Lars
IPC分类号： B05D05/12
CPC分类号： H01L39/2448 , C23C14/087 , C30B23/002 , C30B23/02 , C30B29/22 , C30B29/225 , Y10S505/73 , Y10S505/732
摘要： In situ vapor phase growth of thallium containing superconductors is achieved by controlling thallium volatility. Thallium volatility is controlled by providing active oxygen at the surface of the growing material and by avoiding collisions of energetic species with the growing material. In the preferred embodiment, a thallium containing superconductor is grown by laser ablation of a target, and by provision of oxygen during growth. More specificially, a source of thallium, calcium, barium, copper and oxygen is created by laser ablation of a thallium rich target (20), generating an ablation plume (36) that is directed onto a heated substrate (12) through the oxygen, with the plume passing through oxygen having a pressure from 10 to ten torr. Epitaxial superconducting thin films of thallium, calcium, barium, copper and oxygen have been grown by this technique. Various superconducting phases may be engineered through use of this method.
摘要翻译：通过控制铊挥发性来实现含铊超导体的原位气相生长。铊挥发性通过在生长材料的表面提供活性氧并通过避免能量物种与生长材料的碰撞来控制。在优选实施例中，含铊的超导体通过靶的激光烧蚀和生长期间的氧气生长。更具体地，铊，钙，钡，铜和氧的来源通过富铊靶（20）的激光烧蚀产生，产生通过氧引导到加热的衬底（12）上的消融羽流（36）其中羽流通过氧气，压力为10 -2至10托。已经通过这种技术生长了铊，钙，钡，铜和氧的外延超导薄膜。可以通过使用这种方法来设计各种超导相。

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