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11. 发明申请

US20140145291A1 POWER SEMICONDUCTOR DEVICE 有权
标题翻译：功率半导体器件
公开(公告)号：US20140145291A1
公开(公告)日：2014-05-29
申请号：US13795858
申请日：2013-03-12
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： In Hyuk Song , Kee Ju Um , Chang Su Jang , Jae Hoon Park , Dong Soo Seo
IPC分类号： H01L29/06
CPC分类号： H01L29/402 , H01L29/0619 , H01L29/41741 , H01L29/66348 , H01L29/7397
摘要： Disclosed herein is a power semiconductor device. The power semiconductor device includes a second conductive type first junction termination extension (JTE) layer that is formed so as to be in contact with one side of the second conductive type well layer, a second conductive type second JTE layer that is formed on the same line as the second conductive type first JTE layer, and is formed so as to be spaced apart from the second conductive type first JTE layer in a length direction of the substrate, and a poly silicon layer that is formed so as to be in contact with the second conductive type well layer and an upper portion of the second conductive type first JTE layer.
摘要翻译：这里公开了功率半导体器件。功率半导体器件包括形成为与第二导电类型阱层的一侧接触的第二导电型第一结端接延伸（JTE）层，形成在其上的第二导电型第二JTE层线作为第二导电型第一JTE层，并且形成为在基板的长度方向上与第二导电型第一JTE层间隔开，并且形成为与第二导电型第一JTE层接触的多晶硅层第二导电类型阱层和第二导电型第一JTE层的上部。

12. 发明授权

US09627470B2 Power semiconductor device and method of manufacturing the same 有权
公开(公告)号：US09627470B2
公开(公告)日：2017-04-18
申请号：US14301328
申请日：2014-06-10
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： In Hyuk Song , Jae Hoon Park , Kee Ju Um , Dong Soo Seo
IPC分类号： H01L27/088 , H01L29/06 , H01L29/66 , H01L29/78 , H01L29/739 , H01L29/10
CPC分类号： H01L29/063 , H01L29/0611 , H01L29/0634 , H01L29/0649 , H01L29/1095 , H01L29/66333 , H01L29/66712 , H01L29/7395 , H01L29/7802
摘要： There is provided a power semiconductor device including: a first semiconductor region of a first conductivity type; second semiconductor regions formed in the first semiconductor region and being of a second conductivity type; a well region formed above the second semiconductor regions and being of the second conductivity type; and a source region formed in the well region and being of the first conductivity type, wherein the second semiconductor regions include 1 to n layers formed from a lower portion of the device extending a in a direction of height of the device, and in the case that the widest width of the of the second semiconductor region of the nth layer is Pn, P1

13. 发明授权

US09466589B2 Power module package including heat spreader and inductance coil 有权
标题翻译：功率模块封装包括散热器和电感线圈
公开(公告)号：US09466589B2
公开(公告)日：2016-10-11
申请号：US14661844
申请日：2015-03-18
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Kwang Soo Kim , Young Hoon Kwak , Chang Seob Hong , Joon Seok Chae , Kee Ju Um
IPC分类号： H01L23/522 , H01L25/065 , H01L23/367 , H01L23/36 , H01L23/373 , H01L23/552
CPC分类号： H01L25/0655 , H01L23/36 , H01L23/3735 , H01L23/552 , H01L2224/48091 , H01L2224/49111 , H01L2924/00014
摘要： There is provided a power module package. The power module package includes: a base substrate provided with a pattern; a heat spreader formed by being stacked on an upper surface of the base substrate; and at least one first semiconductor device mounted on an upper surface of the heat spreader, wherein an outer circumferential surface of the heat spreader is provided with a coil.
摘要翻译：提供了一个电源模块封装。功率模块封装包括：具有图案的基底基板; 散热器，其通过堆叠在所述基底基板的上表面上而形成; 以及安装在散热器的上表面上的至少一个第一半导体器件，其中散热器的外圆周表面设置有线圈。

14. 发明授权

US09287363B2 Semiconductor device, method of manufacturing the same and power semiconductor device including the same 有权
标题翻译：半导体装置及其制造方法以及包括该半导体装置的功率半导体装置
公开(公告)号：US09287363B2
公开(公告)日：2016-03-15
申请号：US14273269
申请日：2014-05-08
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Jae Hoon Park , In Hyuk Song , Chang Su Jang , Kee Ju Um
IPC分类号： H01L29/16 , H01L21/04 , H01L29/78 , H01L29/51 , H01L29/49
CPC分类号： H01L29/1608 , H01L21/049 , H01L29/4916 , H01L29/518 , H01L29/66068 , H01L29/78
摘要： A method of manufacturing a semiconductor device may include: preparing a substrate formed of SiC; depositing crystalline or amorphous silicon (Si) on one surface of the substrate to form a first semiconductor layer; and performing a heat treatment under a nitrogen atmosphere to form a second semiconductor layer formed of SiCN between the substrate and the first semiconductor layer.
摘要翻译：制造半导体器件的方法可以包括：制备由SiC形成的衬底; 在所述衬底的一个表面上沉积晶体或非晶硅（Si）以形成第一半导体层; 并在氮气气氛下进行热处理，以在衬底和第一半导体层之间形成由SiCN形成的第二半导体层。

15. 发明授权

US09147757B2 Power semiconductor device and method for manufacturing the same 有权
标题翻译：功率半导体器件及其制造方法
公开(公告)号：US09147757B2
公开(公告)日：2015-09-29
申请号：US13874038
申请日：2013-04-30
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Kee Ju Um , Dong Soo Seo , Chang Su Jang , In Hyuk Song , Jaehoon Park
IPC分类号： H01L29/74 , H01L29/739 , H01L29/66 , H01L29/40 , H01L29/06
CPC分类号： H01L29/7395 , H01L29/0619 , H01L29/0638 , H01L29/404 , H01L29/423 , H01L29/66333
摘要： There is provided a power semiconductor device, including: a first conductive type drift layer, a second conductive type termination layer formed on an upper portion of an edge of the drift layer, and a high concentration first conductive type channel stop layer formed on a side surface of the edge of the drift layer.
摘要翻译：提供了一种功率半导体器件，包括：第一导电型漂移层，形成在漂移层的边缘的上部上的第二导电型端接层和形成在侧面的高浓度第一导电型沟道阻挡层漂移层边缘的表面。

16. 发明申请

US20150187869A1 POWER SEMICONDUCTOR DEVICE 审中-公开
标题翻译：功率半导体器件
公开(公告)号：US20150187869A1
公开(公告)日：2015-07-02
申请号：US14272009
申请日：2014-05-07
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Jae Hoon PARK , Kyu Hyun Mo , Jae Kyu Sung , Kee Ju Um , In Hyuk Song
IPC分类号： H01L29/06 , H01L29/10 , H01L29/739
CPC分类号： H01L29/063 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/7397 , H01L29/74 , H01L29/7802 , H01L29/7813
摘要： A power semiconductor device may include: a first conductivity-type first semiconductor region; a resurf region disposed in the first semiconductor region and including first conductivity-type second semiconductor regions and second conductivity-type third semiconductor regions alternately disposed in a width direction; a first conductivity-type first cover region disposed in the first semiconductor region, disposed to be contiguous with an upper surface of the resurf region, and having an impurity concentration higher than that of the first semiconductor region; a second conductivity-type fourth semiconductor region disposed above the first semiconductor region; a first conductivity-type fifth semiconductor region disposed on an inner side of an upper portion of the fourth semiconductor region; and a trench gate disposed to penetrate from the fifth semiconductor region to a portion of an upper portion of the first semiconductor region and including a gate insulating layer and a conductive material.
摘要翻译：功率半导体器件可以包括：第一导电类型的第一半导体区域; 设置在所述第一半导体区域中并且包括在宽度方向上交替布置的第一导电类型的第二半导体区域和第二导电类型的第三半导体区域的再生区域; 设置在所述第一半导体区域中的第一导电类型的第一覆盖区域，被设置为与所述复原区域的上表面邻接，并且具有高于所述第一半导体区域的杂质浓度的杂质浓度; 设置在所述第一半导体区域上方的第二导电型第四半导体区域; 设置在第四半导体区域的上部的内侧的第一导电型第五半导体区域; 以及沟槽栅极，设置成从第五半导体区域穿透到第一半导体区域的上部的一部分，并且包括栅极绝缘层和导电材料。

17. 发明授权

US08981423B2 Power semiconductor device and method of fabricating the same 有权
标题翻译：功率半导体器件及其制造方法
公开(公告)号：US08981423B2
公开(公告)日：2015-03-17
申请号：US13937589
申请日：2013-07-09
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Dong Soo Seo , Jaehoon Park , Kee Ju Um , Chang Su Jang , In Hyuk Song
IPC分类号： H01L29/66 , H01L29/739
CPC分类号： H01L29/7395 , H01L29/0696 , H01L29/1095 , H01L29/513 , H01L29/518 , H01L29/66348 , H01L29/7397
摘要： There is provided a power semiconductor device, including a plurality of trench gates formed to be spaced apart from each other by a predetermined distance, a current increasing part formed between the trench gates and including a first conductivity-type emitter layer and a gate oxide formed on a surface of the trench gate, and an immunity improving part formed between the trench gates and including a second conductivity-type body layer, a preventing film formed on the surface of the trench gate, and a gate oxide having a thickness less than that the gate oxide of the current increasing part.
摘要翻译：提供了一种功率半导体器件，包括形成为彼此间隔开预定距离的多个沟槽栅极，形成在沟槽栅极之间并包括第一导电型发射极层和形成的栅极氧化物的电流增加部分在所述沟槽栅极的表面上形成的抗扰度改善部以及形成在所述沟槽栅极之间并且包括第二导电型体层的抗扰度改善部，以及形成在所述沟槽栅极的表面上的防止膜和厚度小于所述沟槽栅极的厚度的栅极氧化物。电流增加部分的栅极氧化物。

18. 外观设计

USD717255S1 Semiconductor device 有权
公开(公告)号：USD717255S1
公开(公告)日：2014-11-11
申请号：US29450510
申请日：2013-03-18
申请人： Samsung Electro-Mechanics Co., Ltd.
设计人： Jae Hyun Lim , Jin Suk Son , Jin Su Kim , Jong Man Kim , Joon Hyung Cho , Kee Ju Um , Min Gyu Park , Kyu Hwan Oh , Chang Jae Heo

19. 外观设计

USD717254S1 Semiconductor device 有权
公开(公告)号：USD717254S1
公开(公告)日：2014-11-11
申请号：US29450494
申请日：2013-03-18
申请人： Samsung Electro-Mechanics Co., Ltd.
设计人： Eun Jung Jo , Job Ha , Kee Ju Um , Sun Woo Yun , Chang Seob Hong , Suk Ho Kee , Sung Man Pang , Jun Ho Lee , Kyu Hwan Oh

20. 发明申请

US20140159105A1 POWER SEMICONDUCTOR DEVICE 审中-公开
标题翻译：功率半导体器件
公开(公告)号：US20140159105A1
公开(公告)日：2014-06-12
申请号：US13831780
申请日：2013-03-15
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Kee Ju Um , In Hyuk Song , Chang Su Jang , Jae Hoon Park , Dong Soo Seo
IPC分类号： H01L29/739
CPC分类号： H01L29/7397 , H01L29/1095 , H01L29/41741
摘要： Disclosed herein is a power semiconductor device, including: a drift layer formed on the first surface of the semiconductor substrate, a well layer of a first conductive type, formed on the drift layer, a trench formed to reach the drift layer through the well layer, a first electrode formed in the trench, a second conductive type of second electrode region formed on the well layer, including a first region contacting the trench in a perpendicular direction and a second region spaced apart from the trench in a parallel direction and being perpendicular to the first region, a first conductive type of second electrode region formed to contact a side surface of the second conductive type of second electrode region, and a second electrode formed on the well layer and electrically connected to the second conductive type of second electrode region and the first conductive type of second electrode region.
摘要翻译：本文公开了一种功率半导体器件，包括：形成在半导体衬底的第一表面上的漂移层，形成在漂移层上的第一导电类型的阱层，形成为通过阱层到达漂移层的沟槽，形成在沟槽中的第一电极，形成在阱层上的第二导电类型的第二电极区域，包括在垂直方向上接触沟槽的第一区域和在平行方向上与沟槽间隔开的第二区域，并且垂直形成为与第二导电类型的第二电极区域的侧表面接触的第一导电类型的第二电极区域和形成在阱层上并与第二导电类型的第二电极区域电连接的第二电极和第一导电类型的第二电极区域。

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