会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 14. 发明授权
    • Method for predicting the behavior of dopant and defect components
    • 用于预测掺杂剂和缺陷组分的行为的方法
    • US07074270B2
    • 2006-07-11
    • US10406033
    • 2003-04-02
    • Yuzuru SatoMasamitsu UeharaGyeong S. HwangWilliam A. Goddard, III
    • Yuzuru SatoMasamitsu UeharaGyeong S. HwangWilliam A. Goddard, III
    • C30B1/00
    • H01L21/26513G06F17/5018G06F2217/10H01L21/26566H01L21/2658
    • Techniques for predicting the behavior of dopant and defect components in a substrate lattice formed from a substrate material can be implemented in hardware or software. Fundamental data for a set of microscopic processes that can occur during one or more material processing operations is obtained. Such data can include data representing the kinetics of processes in the set of microscopic processes and the energetics and structure of possible states in the material processing operations. From the fundamental data and a set of external conditions, distributions of dopant and defect components in the substrate lattice are predicted. The distributions of one or more fast components are each predicted by calculating the concentration of the particular fast component for a time period before that fast component reaches its pseudo steady state by solving a first relationship and calculating the concentration of that fast component after the time period by solving a second relationship based on other components, the pseudo steady state of a fast component being a state in which the concentration of that fast component is determined by concentrations of other components. The distribution of Bs3Bi, in addition to the distributions of Bs, BsI, BsI2, BsI3, BsBi, BsBi2, BsBi3, BsBiI, BsBiI2, Bs2Bi, Bs2Bi2, I and In, are calculated by solving the first relationship to predict the distribution of boron after annealing, where Bs and Bi represent substitutional boron and interstitial boron, respectively, and I and In represent interstitial silicon and a cluster of n I's, respectively.
    • 用于预测由衬底材料形成的衬底晶格中的掺杂剂和缺陷组分的行为的技术可以在硬件或软件中实现。 获得可在一个或多个材料加工操作期间发生的一组微观工艺的基本数据。 这样的数据可以包括表示微观过程集合中的过程的动力学的数据,以及材料处理操作中可能状态的能量学和结构。 从基础数据和一组外部条件,预测衬底晶格中的掺杂剂和缺陷组分的分布。 一个或多个快速分量的分布各自通过在该快速分量达到其伪稳态之前的时间段内计算特定快速分量的浓度来求解第一关系并计算该时间段之后该快分量的浓度 通过解决基于其他成分的第二关系,快速成分的伪稳定状态是通过其他成分的浓度来确定该快速成分的浓度的状态。 除了Bs,BsI,BsI2,BsI3,BsBi,BsBi,BsBi,BsBi, 2,BsBi 3,BsBiI,BsBi1 2,Bs2 Bi,Bs2 Bi, 通过求解第一关系来计算退火后硼的分布,其中Bs和Bi分别代表取代硼和间隙硼,并且 I和I分别表示间隙硅和n I的簇。