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    • 10. 发明授权
    • Detection and reduction of dielectric breakdown in semiconductor devices
    • 检测和减少半导体器件中的介质击穿
    • US07943401B2
    • 2011-05-17
    • US12114587
    • 2008-05-02
    • Jamil Tamir-KheliWilliam A. Goddard, IIIMasayasu Miyata
    • Jamil Tamir-KheliWilliam A. Goddard, IIIMasayasu Miyata
    • H01L21/66
    • G01N21/66H01L22/00H01L22/24
    • Methods for detecting the breakdown potential of a semiconductor device having a thin dielectric layer are disclosed. The method includes measuring a spectroscopy of the thin dielectric layer and determining whether the spectroscopy exhibits the presence of a breakdown precursor (H2, H interstitial radical, H attached radical, and H attached dimer). Preferably, the method is carried out in the presence of a substantially significant applied electric field across dielectric layer. A semiconductor device tested in accordance with this method is also disclosed. Additionally, methods for reducing dielectric breakdown of a semiconductor device having a thin dielectric layer involving the substitution of a second molecule for H2 molecules present in the dielectric. This second molecule preferably does not react with Si or O to form an undesired attached state and may be an inert gas having a molecular size approximating that of a Hydrogen atom, such as Helium. A semiconductor device made using this method is also disclosed.
    • 公开了一种用于检测具有薄介电层的半导体器件的击穿电位的方法。 该方法包括测量薄介电层的光谱,并确定光谱是否表现出分解前体(H2,H间隙自由基,H连接基团和H连接的二聚体)的存在。 优选地,该方法在跨介电层的基本上有效的施加电场的存在下进行。 还公开了根据该方法测试的半导体器件。 另外,用于减少具有薄介电层的半导体器件的电介质击穿的方法涉及电介质中存在的用于H 2分子的第二分子的取代。 该第二分子优选不与Si或O反应以形成不期望的附着状态,并且可以是分子大小接近氢原子如氦的惰性气体。 还公开了使用该方法制造的半导体器件。