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11. 发明授权

US06590271B2 Extension of shallow trench isolation by ion implantation 有权
公开(公告)号：US06590271B2
公开(公告)日：2003-07-08
申请号：US09939337
申请日：2001-08-24
申请人： Mark Y. Liu , Leonard C. Pipes , Mitchell C. Taylor
发明人： Mark Y. Liu , Leonard C. Pipes , Mitchell C. Taylor
IPC分类号： H01L2176
CPC分类号： H01L21/76237
摘要： A shallow trench isolation (STI) structure is formed by etching trenches into the surface of a substrate in alignment with a patterned masking layer. An ion implantation of, for example, carbon, nitrogen, or oxygen, is performed so as to create an electrically insulating layer extending downwardly from a bottom surface of the trench. By implanting such extensions, STI structures with greater effective aspect ratios may be obtained which, in turn, allow greater packing density in integrated circuits. Implanted isolation structures may be formed without etching a trench by implanting into regions of the substrate. In this way, trench etch, dielectric back-fill, and planarization operations can be eliminated. Furthermore the implanted regions may be formed by multiple implants at different energies so as to obtain multiple, typically contiguous, target ranges. Ions of various masses or charges may be used so as to obtain the desired implant depth and concentration profile in the isolation structures, independent of whether these structures are trench extensions or formed directly beneath a planarized substrate surface.

12. 发明授权

US5932882A Ion implanter with post mass selection deceleration 失效
标题翻译：离子注入机，后质量选择减速
公开(公告)号：US5932882A
公开(公告)日：1999-08-03
申请号：US860749
申请日：1997-09-08
申请人： Jonathan Gerald England , Babak Adibi , Mitchell C. Taylor
发明人： Jonathan Gerald England , Babak Adibi , Mitchell C. Taylor
IPC分类号： H01J37/05 , H01J37/30 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/3007 , H01J2237/04756
摘要： A decel lens assembly (9) located between the mass selection flight tube and the substrate holder comprises a first electrode (65) at the substrate potential, a second electrode (60) at the flight tube potential and a field electrode (61) between the two at a negative potential to provide focusing. The axial spacing in the beam direction between the first and second electrodes is less than the smallest transverse dimension of the field electrode. The decel lens assembly (9) is mounted directly opposite the outlet from the process chamber to the vacuum pump to maximize evacuation efficiency. An additional screening electrode (56) is provided between the second electrode of the decel lens assembly and the exit aperture of the mass selector. A perforated screening cylinder (54) is mounted on the light tube with the second electrode of the lens assembly mounted at the down beam end of the cylinder. A first electrode has a cylindrical screening flange extending around the field electrode. A further screening electrode is located at the entrance to the electron confinement tube of the PFS system.
摘要翻译： PCT No.PCT / GB96 / 02741 Sec。 371日期：1997年9月8日 102（e）1997年9月8日PCT PCT 1996年11月8日PCT公布。公开号WO97 / 17717PC。日期1997年5月15日位于质量选择飞行管和衬底保持器之间的减速器组件（9）包括在衬底电位处的第一电极（65），在飞行管电位处的第二电极（60）和场电极 61）两者之间处于负电位以提供聚焦。第一和第二电极之间的光束方向上的轴向间距小于场电极的最小横向尺寸。减速透镜组件（9）直接安装在从处理室的出口的正对面到真空泵的对面，以最大化排出效率。在减速透镜组件的第二电极和质量选择器的出口之间设置另外的屏蔽电极（56）。穿孔筛筒（54）安装在光管上，透镜组件的第二电极安装在气缸的下梁端。第一电极具有围绕场电极延伸的圆柱形屏蔽凸缘。另一个屏蔽电极位于PFS系统的电子限制管的入口处。

13. 发明申请

US20090142875A1 METHOD OF MAKING AN IMPROVED SELECTIVE EMITTER FOR SILICON SOLAR CELLS 审中-公开
标题翻译：制备硅太阳能电池改进的选择性发射体的方法
公开(公告)号：US20090142875A1
公开(公告)日：2009-06-04
申请号：US11948630
申请日：2007-11-30
申请人： Peter Borden , Mitchell C. Taylor
发明人： Peter Borden , Mitchell C. Taylor
IPC分类号： H01L31/18 , H01L21/26
CPC分类号： H01L31/18 , H01L31/022425 , Y02E10/50
摘要： A method for forming a selective emitter on a silicon solar cell is provided including forming an oxide layer on a surface of the P-type silicon substrate, implanting phosphorus doping atoms into the oxide layer on the substrate using plasma immersion ion implantation, patterning the oxide layer, annealing the substrate to provide heavily doped regions in the patterned regions and a lightly doped region between the patterned regions, and providing metal contacts to the heavily doped regions.
摘要翻译：提供了一种在硅太阳能电池上形成选择性发射极的方法，包括在P型硅衬底的表面上形成氧化物层，使用等离子体浸没离子注入将磷掺杂原子注入到衬底上的氧化物层中，对基板进行退火以在图案化区域中提供重掺杂区域，以及在图案化区域之间的轻掺杂区域，以及向重掺杂区域提供金属接触。

14. 发明授权

US07314804B2 Plasma implantation of impurities in junction region recesses 有权
标题翻译：接合区凹陷中杂质的等离子体注入
公开(公告)号：US07314804B2
公开(公告)日：2008-01-01
申请号：US11029742
申请日：2005-01-04
申请人： Nick Lindert , Mitchell C. Taylor
发明人： Nick Lindert , Mitchell C. Taylor
IPC分类号： H01L21/336
CPC分类号： H01L29/7848 , H01L21/26506 , H01L21/26513 , H01L21/823807 , H01L21/823814 , H01L29/1083 , H01L29/165 , H01L29/6659 , H01L29/66628 , H01L29/66636 , H01L29/7834 , Y10S257/917
摘要： A transistor device having a conformal depth of impurities implanted by isotropic ion implantation into etched junction recesses. For example, a conformal depth of arsenic impurities and/or carbon impurities may be implanted by plasma immersion ion implantation in junction recesses to reduce boron diffusion and current leakage from boron doped junction region material deposited in the junction recesses. This may be accomplished by removing, such as by etching, portions of a substrate adjacent to a gate electrode to form junction recesses. The junction recesses may then be conformally implanted with a depth of arsenic and carbon impurities using plasma immersion ion implantation. After impurity implantation, boron doped silicon germanium can be formed in the junction recesses.
摘要翻译：具有通过各向同性离子注入注入蚀刻的接合凹部中的杂质的保形深度的晶体管器件。例如，砷杂质和/或碳杂质的保形深度可以通过等离子体浸没离子注入植入连接凹槽中，以减少沉积在接合凹部中的硼掺杂结区域材料的硼扩散和电流泄漏。这可以通过例如通过蚀刻除去与栅电极相邻的衬底的部分以形成结凹陷来实现。然后，可以使用等离子体浸没离子注入，在接合凹槽中共同地注入砷和碳杂质的深度。在杂质注入之后，可以在接合凹槽中形成硼掺杂的硅锗。

15. 发明授权

US07052978B2 Arrangements incorporating laser-induced cleaving 失效
标题翻译：结合激光诱导切割的布置
公开(公告)号：US07052978B2
公开(公告)日：2006-05-30
申请号：US10649958
申请日：2003-08-28
申请人： Mohamad A. Shaheen , Mark Y. Liu , Mitchell C. Taylor
发明人： Mohamad A. Shaheen , Mark Y. Liu , Mitchell C. Taylor
IPC分类号： H01L21/301
CPC分类号： B23K26/18 , B23K26/40 , B23K26/53 , B23K26/55 , B23K2103/50 , H01L21/76254
摘要： Arrangements incorporating laser-induced cleaving.
摘要翻译：结合激光诱导切割的布置。

16. 发明授权

US07015108B2 Implanting carbon to form P-type drain extensions 失效
标题翻译：植入碳以形成P型排水延伸
公开(公告)号：US07015108B2
公开(公告)日：2006-03-21
申请号：US10789851
申请日：2004-02-26
申请人： Aaron O. Vanderpool , Mitchell C. Taylor
发明人： Aaron O. Vanderpool , Mitchell C. Taylor
IPC分类号： H01L21/336
CPC分类号： H01L29/7833 , H01L21/26506 , H01L21/26513 , H01L29/6659
摘要： The use of a carbon implant, in addition to the conventional fluorine implant, may significantly reduce the transient enhanced diffusion in P-type source drain extension regions. As a result, resistivity may be reduced, and dopant density may be increased, increasing current drive in some embodiments.
摘要翻译：除了常规的氟注入之外，碳植入物的使用可以显着减少P型源极漏极延伸区域中的瞬时增强的扩散。结果，在一些实施例中，可以降低电阻率并且可以增加掺杂剂密度，增加电流驱动。

17. 发明授权

US06794755B2 Surface alteration of metal interconnect in integrated circuits for electromigration and adhesion improvement 有权
标题翻译：用于电迁移和粘附改善的集成电路中金属互连的表面改变
公开(公告)号：US06794755B2
公开(公告)日：2004-09-21
申请号：US10400128
申请日：2003-03-25
申请人： Jose A. Maiz , Xiaorong Morrow , Thomas Marieb , Carolyn Block , Jihperng Leu , Paul McGregor , Markus Kuhn , Mitchell C. Taylor
发明人： Jose A. Maiz , Xiaorong Morrow , Thomas Marieb , Carolyn Block , Jihperng Leu , Paul McGregor , Markus Kuhn , Mitchell C. Taylor
IPC分类号： H01L2348
CPC分类号： H01L21/76846 , H01L21/32051 , H01L21/76801 , H01L21/76805 , H01L21/76807 , H01L21/76822 , H01L21/76825 , H01L21/76834 , H01L21/76849 , H01L21/76855 , H01L21/76856 , H01L21/76858 , H01L21/76864 , H01L21/76867 , H01L21/76886 , H01L21/76888 , H01L23/5226 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Described is a method and apparatus for altering the top surface of a metal interconnect. In one embodiment of the invention, a metal interconnect and a barrier layer are formed into an interlayer dielectric (ILD) and the metal interconnect and the barrier layer are planarized to the top of the ILD. The top surfaces of the metal interconnect, the barrier layer, and the ILD are altered with a second metal to form an electromigration barrier. In one embodiment of the invention, the second metal is prevented from contaminating the electrical resistivity of the metal interconnect.
摘要翻译：描述了用于改变金属互连的顶表面的方法和装置。在本发明的一个实施例中，将金属互连和阻挡层形成为层间电介质（ILD），并将金属互连和阻挡层平面化到ILD的顶部。金属互连，阻挡层和ILD的顶表面用第二金属改变以形成电迁移屏障。在本发明的一个实施例中，防止了第二金属污染金属互连的电阻率。

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