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11. 发明申请

US20100055321A1 PRECURSORS FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：原子层沉积的前驱体
公开(公告)号：US20100055321A1
公开(公告)日：2010-03-04
申请号：US12374414
申请日：2007-07-12
申请人： Ce Ma , Qing Min Wang
发明人： Ce Ma , Qing Min Wang
IPC分类号： C23C16/448 , C09D1/00
CPC分类号： C23C16/405 , C07F9/005 , C23C16/45525 , C23C16/45553
摘要： Stable ALD precursors that have at least one metal-nitrogen bond and a mixed ligand are presented. These ALD precursors exhibit self-limiting growth, at reduced deposition temperature and produce less contamination all with enhanced stability.
摘要翻译：提出了具有至少一个金属 - 氮键和混合配体的稳定的ALD前体。这些ALD前体在降低的沉积温度下表现出自限制的生长，并且以增强的稳定性产生更少的污染物。

12. 发明授权

US07547631B2 Organometallic compounds 有权
标题翻译：有机金属化合物
公开(公告)号：US07547631B2
公开(公告)日：2009-06-16
申请号：US11542923
申请日：2006-10-04
申请人： Deodatta Vinayak Shenai-Khatkhate , Qing Min Wang
发明人： Deodatta Vinayak Shenai-Khatkhate , Qing Min Wang
IPC分类号： H01L21/44 , C23C16/00
CPC分类号： C07F17/02 , C07F9/5045 , C23C16/34 , C23C16/40
摘要： Organometallic compounds containing a phosphoamidinate ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.
摘要翻译：提供了含有磷酰胺化物配体的有机金属化合物。这些化合物特别适用于气相沉积前体。还提供了使用这种化合物沉积薄膜的方法，例如通过ALD和CVD。

13. 发明申请

US20090017208A1 Precursor compositions and methods 有权
标题翻译：前体组合物和方法
公开(公告)号：US20090017208A1
公开(公告)日：2009-01-15
申请号：US12074373
申请日：2008-03-03
申请人： Deodatta Vinayak Shenai-Khatkhate , Stephen J. Manzik , Qing Min Wang
发明人： Deodatta Vinayak Shenai-Khatkhate , Stephen J. Manzik , Qing Min Wang
IPC分类号： C23C16/22 , C09D5/00
CPC分类号： C23C16/45553 , C23C16/405
摘要： Compositions including an amido-group-containing vapor deposition precursor and a stabilizing additive are provided. Such compositions have improved thermal stability and increased volatility as compared to the amido-group-containing vapor deposition precursor itself. These compositions are useful in the deposition of thin films, such as by atomic layer deposition.
摘要翻译：提供了包含含酰氨基的气相沉积前体和稳定添加剂的组合物。与含酰氨基的气相沉积前体本身相比，这种组合物具有改善的热稳定性和增加的挥发性。这些组合物可用于沉积薄膜，例如通过原子层沉积。

14. 发明申请

US20080305260A1 Organometallic compounds 有权
标题翻译：有机金属化合物
公开(公告)号：US20080305260A1
公开(公告)日：2008-12-11
申请号：US12156898
申请日：2008-06-05
申请人： Deodatta Vinayak Shenai-Khatkhate , Huazhi Li , Qing Min Wang
发明人： Deodatta Vinayak Shenai-Khatkhate , Huazhi Li , Qing Min Wang
IPC分类号： C23C16/18
CPC分类号： C23C16/45525 , C23C16/405
摘要： Heteroleptic organometallic compounds containing at least one formamidinate ligand are provided. These heteroleptic organometallic compounds have improved properties over conventional vapor deposition precursors. Such compounds are suitable for use as vapor deposition precursors including direct liquid injection. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds or their solutions in organic solvents.
摘要翻译：提供含有至少一种甲酰胺基配体的异烟有机金属化合物。这些杂多有机金属化合物具有优于常规气相沉积前体的性能。这种化合物适用于包括直接液体注入的气相沉积前体。还提供了使用这样的化合物或其溶液在有机溶剂中沉积薄膜的方法，例如通过ALD和CVD沉积。

15. 发明申请

US20120295038A1 METHOD AND APPARATUS FOR USING SOLUTION BASED PRECURSORS FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：使用基于溶液的前驱体进行原子层沉积的方法和装置
公开(公告)号：US20120295038A1
公开(公告)日：2012-11-22
申请号：US13298574
申请日：2011-11-17
申请人： Ce Ma , Qing Min Wang , Patrick J. Helly , Richard Hogle
发明人： Ce Ma , Qing Min Wang , Patrick J. Helly , Richard Hogle
IPC分类号： C23C16/44 , C23C16/50
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/403 , C23C16/405 , C23C16/409 , C23C16/448 , C23C16/45525
摘要： A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.
摘要翻译：提供了具有特殊ALD操作的解决方案稳定和传送技术的独特组合。使用溶解在溶剂中的各种低挥发性固体ALD前体。不稳定的溶质可以在溶液中稳定，并且所有溶液可以在室温下输送。溶液蒸发后，将气相前体和溶剂脉冲进入沉积室，以确保真正的ALD膜生长。

16. 发明授权

US08012536B2 Method of forming metal-containing layer using organometallic compounds 有权
标题翻译：使用有机金属化合物形成含金属层的方法
公开(公告)号：US08012536B2
公开(公告)日：2011-09-06
申请号：US12156898
申请日：2008-06-05
申请人： Deodatta Vinayak Shenai-Khatkhate , Huazhi Li , Qing Min Wang
发明人： Deodatta Vinayak Shenai-Khatkhate , Huazhi Li , Qing Min Wang
IPC分类号： C23C16/18
CPC分类号： C23C16/45525 , C23C16/405
摘要： Methods of forming metal-containing layers are provided where heteroleptic organometallic compounds containing at least one formamidinate ligand are conveyed in a gaseous form to a reactor; and films comprising a metal are deposited on a substrate. These heteroleptic organometallic compounds have improved properties over conventional vapor deposition precursors. Such compounds are suitable for use as vapor deposition precursors including direct liquid injection. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds or their solutions in organic solvents.
摘要翻译：提供形成含金属层的方法，其中含有至少一个甲酰胺基配体的杂多有机金属化合物以气态形式输送到反应器; 并且包含金属的膜沉积在基板上。这些杂多有机金属化合物具有优于常规气相沉积前体的性能。这种化合物适用于包括直接液体注入的气相沉积前体。还提供了使用这样的化合物或其溶液在有机溶剂中沉积薄膜的方法，例如通过ALD和CVD沉积。

17. 发明申请

US20090305504A1 SINGLE PRECURSORS FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：单原子沉积物的单一前体
公开(公告)号：US20090305504A1
公开(公告)日：2009-12-10
申请号：US12374343
申请日：2007-07-02
申请人： Ce Ma , Qing Min Wang
发明人： Ce Ma , Qing Min Wang
IPC分类号： H01L21/3205 , C07F19/00 , C07F7/28 , C07F5/06 , H01L21/31
CPC分类号： C23C16/405 , C23C16/45525 , C23C16/45536 , C23C16/45553
摘要： Single precursors for use in flash ALD processes are disclosed. These precursors have the general formula: XmM(OR)n or XpM(O2R′)q where M is Hf, Zr, Ti, Al, or Ta; X is a ligand that can interact with surface hydroxyl sites; OR and O2R′ are alkoxyl groups with R and R′ containing two or more carbon atoms; m+n=3 to 5; p+2q=3 to 5; and m, n, p, q≠0. Further precursors have the general formula: (R12N)mM(═NR2)n or (R3CN2R42)pM(═NR2)q where M is Hf, Zr, Ti, or Ta; R12N is an amino group with R1 containing two or more carbon atoms; NR2 is an imido group with R2 containing two or more carbon atoms; R3 and R4 are alkyl groups; m+2n=4 or 5; p+2q=4 or 5; and m, n, p, q≠0. Flash ALD methods using these precursors are also described.
摘要翻译：公开了用于闪光ALD工艺的单一前体。这些前体具有以下通式：XmM（OR）n或XpM（O 2 R'）q，其中M是Hf，Zr，Ti，Al或Ta; X是可以与表面羟基位点相互作用的配体; OR和O 2 R'是具有两个或更多个碳原子的R和R'的烷氧基; m + n = 3〜5; p + 2q = 3〜5; 和m，n，p，q0。其它前体具有以下通式：（R 12 N）mM（-NR 2）n或（R 3 CN 2 R 42）p M（-NR 2）q，其中M是Hf，Zr，Ti或Ta; R12N是具有含有两个或更多个碳原子的R 1的氨基; NR2是含有两个或更多个碳原子的R2的亚氨基; R3和R4是烷基; m + 2n = 4或5; p + 2q = 4或5; 和m，n，p，q0。还描述了使用这些前体的闪光ALD方法。

18. 发明申请

US20080026578A1 Organometallic compounds 有权
标题翻译：有机金属化合物
公开(公告)号：US20080026578A1
公开(公告)日：2008-01-31
申请号：US11540072
申请日：2006-09-29
申请人： Deodatta Vinayak Shenai-Khatkhate , Qing Min Wang
发明人： Deodatta Vinayak Shenai-Khatkhate , Qing Min Wang
IPC分类号： H01L21/44 , C07F5/00 , C23C16/00
CPC分类号： C07F7/00 , C07F1/08 , C07F3/02 , C07F5/00 , C07F9/00 , C07F15/0046 , C07F15/0086 , C07F15/04 , C23C16/18
摘要： Organometallic compounds containing an electron donating group-substituted alkenyl ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.
摘要翻译：提供含有给电子基团取代的烯基配体的有机金属化合物。这些化合物特别适用于气相沉积前体。还提供了使用这种化合物沉积薄膜的方法，例如通过ALD和CVD。

19. 发明申请

US20080026577A1 Organometallic compounds 有权
标题翻译：有机金属化合物
公开(公告)号：US20080026577A1
公开(公告)日：2008-01-31
申请号：US11542923
申请日：2006-10-04
申请人： Deodatta Vinayak Shenai-Khatkhate , Qing Min Wang
发明人： Deodatta Vinayak Shenai-Khatkhate , Qing Min Wang
IPC分类号： H01L21/44
CPC分类号： C07F17/02 , C07F9/5045 , C23C16/34 , C23C16/40
摘要： Organometallic compounds containing a phosphoamidinate ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.
摘要翻译：提供了含有磷酰胺化物配体的有机金属化合物。这些化合物特别适用于气相沉积前体。还提供了使用这种化合物沉积薄膜的方法，例如通过ALD和CVD。

20. 发明授权

US07514119B2 Method and apparatus for using solution based precursors for atomic layer deposition 有权
标题翻译：用于原子层沉积的基于溶液的前体的方法和装置
公开(公告)号：US07514119B2
公开(公告)日：2009-04-07
申请号：US11400904
申请日：2006-04-10
申请人： Ce Ma , Qing Min Wang , Patrick J. Helly , Richard Hogle
发明人： Ce Ma , Qing Min Wang , Patrick J. Helly , Richard Hogle
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/448 , C23C16/45525 , Y10T428/8305
摘要： A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.
摘要翻译：提供了具有特殊ALD操作的解决方案稳定和传送技术的独特组合。使用溶解在溶剂中的各种低挥发性固体ALD前体。不稳定的溶质可以在溶液中稳定，并且所有溶液可以在室温下输送。溶液蒸发后，将气相前体和溶剂脉冲进入沉积室，以确保真正的ALD膜生长。

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