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11. 发明授权

US06744800B1 Method and structure for nitride based laser diode arrays on an insulating substrate 有权
标题翻译：绝缘基板上基于氮化物的激光二极管阵列的方法和结构
公开(公告)号：US06744800B1
公开(公告)日：2004-06-01
申请号：US09223112
申请日：1998-12-30
申请人： Michael A. Kneissl , Thomas L. Paoli , David P. Bour , Noble M. Johnson , Jack Walker
发明人： Michael A. Kneissl , Thomas L. Paoli , David P. Bour , Noble M. Johnson , Jack Walker
IPC分类号： H01S500
CPC分类号： H01L21/6835 , B82Y20/00 , H01L21/2007 , H01L27/153 , H01L33/0079 , H01L2221/68359 , H01L2221/68368 , H01L2224/83192 , H01L2224/83895 , H01L2924/01079 , H01S5/0217 , H01S5/34333 , H01S5/4025 , H01S5/4031
摘要： A method and structure for nitride based laser diode arrays on an insulating substrate is described. Various contact layouts are used to reduce electrical and thermal crosstalk between laser diodes in the array. A channel structure is used to make a surface emitting laser diode while maintaining a simple contact structure. Buried layers are used to provide a compact and low crosstalk contact structure for the laser diode array.
摘要翻译：描述了绝缘基板上的基于氮化物的激光二极管阵列的方法和结构。使用各种接触布局来减少阵列中的激光二极管之间的电和热串扰。通道结构用于制造表面发射激光二极管，同时保持简单的接触结构。掩埋层用于为激光二极管阵列提供紧凑且低串扰的接触结构。

12. 发明授权

US07310358B2 Semiconductor lasers 有权
标题翻译：半导体激光器
公开(公告)号：US07310358B2
公开(公告)日：2007-12-18
申请号：US11015990
申请日：2004-12-17
申请人： Christopher L. Chua , Michael A. Kneissl , Patrick Y. Maeda , Noble M. Johnson , Ross D. Bringans , John E. Northrup , David K. Biegelsen
发明人： Christopher L. Chua , Michael A. Kneissl , Patrick Y. Maeda , Noble M. Johnson , Ross D. Bringans , John E. Northrup , David K. Biegelsen
IPC分类号： H01S3/10 , H01S5/00 , H01S3/14
CPC分类号： H01S5/0425 , H01S5/4031 , H01S5/4087
摘要： Lasers, such as in laser structures, can include two or more semiconductor structures that are substantially identical or that include the same semiconductor material and have substantially the same geometry, such as in closely spaced dual-spot two-beam or quad-spot four-beam lasers. The lasers can also include differently structured current flow or contact structures or different wavelength control structures. For example, current flow or contact structures can be differently structured to prevent or otherwise affect phase locking, such as by causing different threshold currents and different operating temperatures. Exemplary differences include that one laser's semiconductor structure can have an isolated area that does not receive electrical current from a covering conductive layer; conductive layers of two layers can have different thicknesses or lengths; one laser can have a patterned layer with high electrical resistance between its semiconductor structure and a conductive layer; or one laser's semiconductor structure can include regions of high electrical resistance adjacent its contact structure.
摘要翻译：诸如激光结构的激光器可以包括两个或更多个半导体结构，其基本相同或包括相同的半导体材料并具有基本上相同的几何形状，例如紧密间隔的双点双光束或四点四光束，光束激光器。激光器还可以包括不同结构的电流或接触结构或不同的波长控制结构。例如，电流或接触结构可以被不同地构造以防止或以其他方式影响锁相，例如通过引起不同的阈值电流和不同的工作温度。示例性差异包括一个激光器的半导体结构可以具有不从覆盖导电层接收电流的隔离区域; 两层的导电层可以具有不同的厚度或长度; 一个激光器可以具有在其半导体结构和导电层之间具有高电阻的图案层; 或者一个激光器的半导体结构可以包括邻近其接触结构的高电阻的区域。

13. 发明授权

US06597717B1 Structure and method for index-guided, inner stripe laser diode structure 有权
标题翻译：折射率导向，内条激光二极管结构的结构和方法
公开(公告)号：US06597717B1
公开(公告)日：2003-07-22
申请号：US09443172
申请日：1999-11-19
申请人： Michael A. Kneissl , David P. Bour , Linda T. Romano , Brent S. Krusor , Noble M. Johnson
发明人： Michael A. Kneissl , David P. Bour , Linda T. Romano , Brent S. Krusor , Noble M. Johnson
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/2214 , H01S5/222 , H01S5/2227 , H01S5/2231 , H01S5/34333
摘要： An inner stripe laser diode structure for GaN laser diodes is disclosed. Inner stripe laser diode structures provide a convenient means of achieving low threshold, single mode laser diodes. The structure of an inner stripe laser diode is modified to produce lateral index guiding.
摘要翻译：公开了一种用于GaN激光二极管的内条激光二极管结构。内部条纹激光二极管结构提供了实现低阈值单模激光二极管的便利手段。修改内部条纹激光二极管的结构以产生横向折射率引导。

14. 发明授权

US06724013B2 Edge-emitting nitride-based laser diode with p-n tunnel junction current injection 有权
标题翻译：边缘发射氮化物激光二极管，p-n隧道结电流注入
公开(公告)号：US06724013B2
公开(公告)日：2004-04-20
申请号：US10024417
申请日：2001-12-21
申请人： Michael A. Kneissl , Peter Kiesel , Christian G. Van de Walle
发明人： Michael A. Kneissl , Peter Kiesel , Christian G. Van de Walle
IPC分类号： H01L3112
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/3095 , H01S5/34333
摘要： A p-n tunnel junction between a p-type semiconductor layer and a n-type semiconductor layer provides current injection for an edge-emitting nitride based semiconductor laser structure. The amount of p-type material in the nitride based semiconductor laser structure can be minimized, with attendant advantages in electrical, thermal, and optical performance, and in fabrication.
摘要翻译： p型半导体层和n型半导体层之间的p-n隧道结为边缘发射氮化物半导体激光器结构提供电流注入。氮化物基半导体激光器结构中的p型材料的量可以最小化，同时具有电，热和光学性能以及制造中的优点。

15. 发明授权

US06515308B1 Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection 有权
标题翻译：基于氮化物的VCSEL或具有p-n隧道结电流注入的发光二极管
公开(公告)号：US06515308B1
公开(公告)日：2003-02-04
申请号：US10024418
申请日：2001-12-21
申请人： Michael A. Kneissl , Peter Kiesel , Christian G. Van de Walle
发明人： Michael A. Kneissl , Peter Kiesel , Christian G. Van de Walle
IPC分类号： H01L2715
CPC分类号： H01S5/18341 , H01L33/04 , H01L33/105 , H01L33/14 , H01L33/465 , H01S5/0213 , H01S5/18305 , H01S5/18308 , H01S5/18369 , H01S5/2009 , H01S5/3095 , H01S5/32341
摘要： A p-n tunnel junction between a p-type semiconductor layer and a n-type semiconductor layer provides current injection for an nitride based vertical cavity surface emitting laser or light emitting diode structure. The p-n tunnel junction reduces the number of p-type semiconductor layers in the nitride based semiconductor VCSEL or LED structure which reduces the distributed loss, reduces the threshold current densities, reduces the overall series resistance and improves the structural quality of the laser by allowing higher growth temperatures.
摘要翻译： p型半导体层和n型半导体层之间的p-n隧道结提供了用于基于氮化物的垂直腔表面发射激光器或发光二极管结构的电流注入。 pn隧道结减少了基于氮化物的半导体VCSEL或LED结构中的p型半导体层的数量，其减少了分布损耗，降低了阈值电流密度，降低了整体串联电阻，并且通过允许更高的温度来提高激光器的结构质量生长温度。

16. 发明授权

US06618413B2 Graded semiconductor layers for reducing threshold voltage for a nitride-based laser diode structure 有权
标题翻译：用于降低基于氮化物的激光二极管结构的阈值电压的分级半导体层
公开(公告)号：US06618413B2
公开(公告)日：2003-09-09
申请号：US10024239
申请日：2001-12-21
申请人： David P. Bour , Michael A. Kneissl
发明人： David P. Bour , Michael A. Kneissl
IPC分类号： H01S5343
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/321 , H01S5/34333
摘要： Graded semiconductor layers between GaN and AlGaN layers in a nitride based semiconductor laser structure reduce the threshold voltage of the laser structure by reducing the electric potential barrier at the interface between the GaN and AlGaN layers. The graded layers can be step graded, continuous graded or digital graded.
摘要翻译：基于氮化物的半导体激光器结构中的GaN和AlGaN层之间的梯度半导体层通过降低GaN和AlGaN层之间的界面处的电位势垒来降低激光器结构的阈值电压。分级层可以分级，连续分级或数字分级。

17. 发明授权

US06526083B1 Two section blue laser diode with reduced output power droop 有权
标题翻译：两部分蓝色激光二极管，输出功率降低
公开(公告)号：US06526083B1
公开(公告)日：2003-02-25
申请号：US09972361
申请日：2001-10-09
申请人： Michael A. Kneissl , Thomas L. Paoli
发明人： Michael A. Kneissl , Thomas L. Paoli
IPC分类号： H01S5026
CPC分类号： B82Y20/00 , H01S5/0265 , H01S5/0287 , H01S5/0625 , H01S5/06251 , H01S5/34333
摘要： A III-V nitride blue laser diode has an amplifier region and a modulator region. The amplifier region has a constant current to keep the region near the lasing threshold. The modulator region has a small varying forward current or reverse bias voltage which controls the light output of the laser. This two section blue laser diode requires much lower power consumption than directly modulated lasers which reduces transient heating and “drooping” of the light output.
摘要翻译： III-V族氮化物蓝色激光二极管具有放大器区域和调制器区域。放大器区域具有恒定电流以保持该区域接近激光阈值。调制器区域具有小的变化的正向电流或反向偏置电压，其控制激光器的光输出。这两部分蓝色激光二极管比直接调制的激光器要低得多的功耗，减少了瞬态加热和“下垂”光输出。

18. 发明授权

US08088637B1 Method of manufacturing a semiconductor device including a superlattice strain relief layer 有权
标题翻译：包括超晶格应变消除层的半导体器件的制造方法
公开(公告)号：US08088637B1
公开(公告)日：2012-01-03
申请号：US12435333
申请日：2009-05-04
申请人： William S. Wong , Michael A. Kneissl , Zhihong Yang , Mark Teepe , Cliff Knollenberg
发明人： William S. Wong , Michael A. Kneissl , Zhihong Yang , Mark Teepe , Cliff Knollenberg
IPC分类号： H01L21/00
CPC分类号： H01L29/205 , B82Y20/00 , H01L29/155 , H01L29/2003 , H01L33/04 , H01L33/32 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/0224 , H01S5/34333
摘要： A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.
摘要翻译：在GaN /蓝宝石模板结构上形成GaN / AlN超晶格，其部分作为用于后续层（例如深UV发光二极管）生长的应变消除层。 GaN / AlN超晶格减轻GaN /蓝宝石模板和多量子阱异质结构有源区之间的应变，允许在有源区中使用高Al摩尔分数，从而在深紫外波长中发射。

19. 发明申请

US20090053845A1 Method For Controlling The Structure And Surface Qualities Of A Thin Film And Product Produced Thereby 审中-公开
标题翻译：用于控制薄膜的结构和表面质量的方法以及由此产生的产品
公开(公告)号：US20090053845A1
公开(公告)日：2009-02-26
申请号：US12265379
申请日：2008-11-05
申请人： William S. Wong , Michael A. Kneissl , Mark Teepe
发明人： William S. Wong , Michael A. Kneissl , Mark Teepe
IPC分类号： H01L21/18
CPC分类号： H01L33/0079 , B82Y20/00 , H01L21/30621 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/32341 , H01S5/34333
摘要： A system and method for providing improved surface quality following removal of a substrate and template layers from a semiconductor structure provides an improved surface quality for a layer (such as a quantum well heterostructure active region) prior to bonding a heat sink/conductive substrate to the structure. Following the physical removal of a sapphire substrate, a sacrificial coating such as a spin-coat polymer photoresist is applied to an exposed GaN surface. This sacrificial coating provides a planar surface, generally parallel to the planes of the interfaces of the underlying layers. The sacrificial coating and etching conditions are selected such that the etch rate of the sacrificial coating approximately matches the etch rate of GaN and the underlying layers, so that the physical surface profile during etching approximates the physical surface profile of the sacrificial coating prior to etching. Following etching, a substrate is bonded to the exposed surface which acts as a heat sink and may be conductive providing for backside electrical contact to the active region.
摘要翻译：在从半导体结构去除衬底和模板层之后提供改进的表面质量的系统和方法在将散热器/导电衬底接合到衬底之前为层（例如量子阱异质结构有源区）提供改进的表面质量结构体。在物理去除蓝宝石衬底之后，将诸如旋涂聚合物光致抗蚀剂的牺牲涂层施加到暴露的GaN表面。该牺牲涂层提供了一般平行于下层的界面的平面的平面。选择牺牲涂层和蚀刻条件使得牺牲涂层的蚀刻速率近似与GaN和下面的层的蚀刻速率匹配，使得蚀刻期间的物理表面轮廓近似于蚀刻之前牺牲涂层的物理表面轮廓。在蚀刻之后，衬底被结合到作为散热器的暴露表面，并且可以是导电的，用于与有源区域的背面电接触。

20. 发明授权

US07122799B2 LED or laser enabled real-time PCR system and spectrophotometer 有权
标题翻译： LED或激光启用实时PCR系统和分光光度计
公开(公告)号：US07122799B2
公开(公告)日：2006-10-17
申请号：US10739706
申请日：2003-12-18
申请人： Huangpin Ben Hsieh , Michael A. Kneissl
发明人： Huangpin Ben Hsieh , Michael A. Kneissl
IPC分类号： G01J5/02
CPC分类号： G01N21/6454 , B01L7/52 , B01L2300/0654 , B01L2300/0829 , G01N21/0303 , G01N21/253 , G01N21/272 , G01N21/31 , G01N21/33 , G01N21/6452 , G01N21/6486 , G01N2201/0627
摘要： A system for conducting a polymerase chain reaction (PCR) assay upon a collection of samples is disclosed. The PCR assay is performed by absorption detection. The system includes a multi-well plate which is adapted to retain a collection of sample wells. This system includes a thermal cycler for the multi-well plate. The system additionally includes a collection of photodetectors, and a corresponding number of light sources. The light sources are positioned such that light emitted from each of the respective light sources passes through a corresponding well retained in the multi-well plate and to a corresponding photodetector. The system also includes a processor or other means for analyzing the output signals from the photodetectors. In certain versions of the system, ultra-violet light is used.
摘要翻译：公开了在收集样品时进行聚合酶链反应（PCR）测定的系统。通过吸收检测进行PCR测定。该系统包括多孔板，其适于保留一组样品孔。该系统包括用于多孔板的热循环仪。该系统还包括光电检测器的集合和相应数量的光源。光源被定位成使得从每个相应光源发射的光穿过保持在多孔板中的对应的阱和相应的光电检测器。该系统还包括用于分析来自光电检测器的输出信号的处理器或其它装置。在系统的某些版本中，使用紫外光。

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