专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US06762950B2 Folded memory layers 失效
标题翻译：折叠内存层
公开(公告)号：US06762950B2
公开(公告)日：2004-07-13
申请号：US10306229
申请日：2002-11-29
申请人： Hans Gude Gudesen , Per-Erik Nordal
发明人： Hans Gude Gudesen , Per-Erik Nordal
IPC分类号： G11C1122
CPC分类号： G11C11/22 , H01L27/10
摘要： A ferroelectric or electret volumetric memory device with a memory material provided in sandwich between first and second electrode layers with stripe-like electrodes forming word lines and bit lines of a matrix-addressable memory array, memory cells are defined in volumes of memeory material in between two crossing word lines and bit lines and a plurality of memory arrays are provided in a stacked arrangement. A stack of memory arrays is formed by tow or more ribbon-like structures, which are folded and/or braided into each other. Each ribbon-like structure includes a flexible substrate of non-conducting material and the electrode layers respectively provided on each surface of the substrate and including the parallel strip-like electrodes extending along the ribbon-like structure. A layer of memory material covers one of the electrode layers whereby each memory array of the stack is formed by overlapping portions of a pair of adjacent ribbon-like structures and crossing in substantially orthogonal relationship.
摘要翻译：具有记忆材料的铁电体或驻极体体积存储装置，其具有在形成矩阵可寻址存储器阵列的字线和位线的带条形电极的第一和第二电极层之间夹层提供的存储器单元，以堆叠的方式设置两个交叉字线和位线以及多个存储器阵列。一叠存储器阵列由丝束状或更多的带状结构形成，这些结构被折叠和/或编织成彼此。每个带状结构包括非导电材料的柔性基板和分别设置在基板的每个表面上并包括沿着带状结构延伸的平行条状电极的电极层。存储器材料层覆盖电极层之一，由此堆叠的每个存储器阵列由一对相邻的带状结构的重叠部分形成，并以基本正交的关系交叉。

12. 发明授权

US06498744B2 Ferroelectric data processing device 失效
标题翻译：铁电数据处理装置
公开(公告)号：US06498744B2
公开(公告)日：2002-12-24
申请号：US09978034
申请日：2001-10-17
申请人： Hans Gude Gudesen , Per-Erik Nordal , Geirr Ivarsson Leistad
发明人： Hans Gude Gudesen , Per-Erik Nordal , Geirr Ivarsson Leistad
IPC分类号： G11C1122
CPC分类号： H01L27/11502 , G11C11/22 , H01L27/0688
摘要： In a ferroelectric data processing device for processing and/or storage of data with passive or electrical addressing a data-carrying medium is used in the form of a thin film (1) of ferroelectric material which by an applied electric field is polarized to determined polarization states or switched between these and is provided as a continuous layer in or adjacent toelectrode structures in the form of a matrix. A logic element (4) is formed at the intersection between an x electrode (2) and a y electrode (3) of the electrode matrix. The logic element (4) is addressed by applying to the electrodes (2, 3) a voltage greater than the coercivity field of the ferroelectric material. Dependent on the polarization state and the form of the hysteresis loop of the ferroelectric material a distinct detection of the polarization state in the logic element (4) is obtained and it may also be possible to switch between the polarization states of the logic element, which hence may be used for implementing a bistable switch or a memory cell. The data processing device according to the invention may be stacked layerwise if the separate layers are separated by an electrical isolating layer and hence be used for implementing volumetric data processing devices.
摘要翻译：在用于处理和/或存储具有无源或电寻址的数据的铁电数据处理装置中，数据承载介质以铁电材料薄膜（1）的形式使用，其通过施加的电场被极化以确定极化状态或在这些之间切换并且以矩阵的形式提供为电极结构中或邻近的连续层。逻辑元件（4）形成在电极矩阵的x电极（2）和y电极（3）之间的相交处。逻辑元件（4）通过向电极（2,3）施加大于铁电材料的矫顽力场的电压来寻址。取决于极化状态和铁电材料的磁滞回线的形式，获得逻辑元件（4）中极化状态的不同检测，并且还可以在逻辑元件的极化状态之间切换，其中因此可以用于实现双稳态开关或存储单元。如果分离的层被电绝缘层分开，则根据本发明的数据处理设备可以层叠堆叠，并且因此用于实现体积数据处理设备。

13. 发明授权

US6052354A Optical data storage medium and method for writing and reading of data 失效
标题翻译：光学数据存储介质和数据写入和读取方法
公开(公告)号：US6052354A
公开(公告)日：2000-04-18
申请号：US981425
申请日：1997-12-23
申请人： Hans Gude Gudesen , Per-Erik Nordal , Rolv M.o slashed.ll Nilsen , Thormod N.ae butted.ringsrud
发明人： Hans Gude Gudesen , Per-Erik Nordal , Rolv M.o slashed.ll Nilsen , Thormod N.ae butted.ringsrud
IPC分类号： G02B5/18 , G11B7/0033 , G11B7/0065 , G11B7/24 , G11C13/04 , G11B7/00
CPC分类号： G11B7/0033 , G11B7/0065 , G11B7/24 , G11C13/04
摘要： In an optical data storage medium with a storage area formed from a transparent, homogenous base material and with a number of optically active structures at one side of the storage area, the optically active structures are diffractive optical elements which can focus a beam of light incident on the storage area on to one or more points in the storage area and/or a redirected beam of light or emitted light radiation from this or these points on to a point outside the optical storage medium. During writing/reading of data in the storage medium, the diffractive optical elements are used for focusing the write/read beam in order to generate a data carrying structure or read data stored in such a data carrying structure, respectively. By exploiting the special optical properties of diffractive optical elements, it is possible to achieve parallel writing/reading of data, possibly in several parallel storage layers in the optical storage medium or randomly distributed therein, the optical storage medium thus providing a genuine volumetric storage and a corresponding genuine volumetric accessing of the stored data.
摘要翻译： PCT No.PCT / NO96 / 00155 Sec。 371 1997年12月23日第 102（e）1997年12月23日PCT PCT 1996年6月24日PCT公布。出版物WO97 / 01171 日期1997年1月9日在具有由透明均质基材形成的存储区域和在存储区域的一侧具有多个光学活性结构的光学数据存储介质中，光学活性结构是可聚焦的衍射光学元件入射到存储区域中的光束到存储区域中的一个或多个点和/或重定向的光束或发射的光辐射从该或这些点到光存储介质外的点。在存储介质中写入/读取数据期间，衍射光学元件用于聚焦写入/读取光束，以便分别产生存储在这种数据承载结构中的数据承载结构或读取数据。通过利用衍射光学元件的特殊光学特性，可以实现数据的并行写入/读取，可能在光存储介质中的几个并行存储层中或随机分布在其中，光学存储介质因此提供真正的容积存储，存储数据的对应的真实容量访问。

14. 发明授权

US06765617B1 Optoelectronic camera and method for image formatting in the same 失效
标题翻译：光电相机和图像格式化方法相同
公开(公告)号：US06765617B1
公开(公告)日：2004-07-20
申请号：US09341311
申请日：1999-07-08
申请人： Reidar E. Tangen , Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad
发明人： Reidar E. Tangen , Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad
IPC分类号： H04N5225
CPC分类号： H04N9/045 , H01L27/14627 , H04N5/3415 , H04N2209/046
摘要： An optoelectronic camera comprises an objective system formed by a number of optical active structures (L), particularly refractive structures in the form of microlenses or lenslets provided in an array. A detector device (D) is assigned to the lens array and comprises detectors (Dn) formed by sensor elements (E) which define pixels in the optical image. Each detector (Dn) defines a sample of the optical image and optimally all samples are used to generate a digital image. The optoelectronic camera may be realized as a color image camera, particularly for recording images in an RGB system. In a method for digital electronic formatting of an image recorded with the optoelectronic camera, zoom and pan functions are implemented in the camera.
摘要翻译：光电照相机包括由许多光学有源结构（L）形成的物镜系统，特别是以阵列形式提供的微透镜或小透镜形式的折射结构。检测器装置（D）被分配给透镜阵列，并且包括由限定光学图像中的像素的传感器元件（E）形成的检测器（Dn）。每个检测器（Dn）定义光学图像的样本，并且最佳地使用所有样本来产生数字图像。光电相机可以被实现为彩色图像相机，特别是用于在RGB系统中记录图像。在用光电相机记录的图像的数字电子格式化方法中，在相机中实现变焦和平移功能。

15. 发明授权

US06380597B1 Read-only memory and read-only memory device 失效
标题翻译：只读存储器和只读存储器件
公开(公告)号：US06380597B1
公开(公告)日：2002-04-30
申请号：US09297521
申请日：1999-09-13
申请人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad
发明人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad
IPC分类号： G11C1706
CPC分类号： G11C13/0014 , B82Y10/00 , G11C11/5664 , G11C11/5692 , G11C13/0016 , H01L27/112
摘要： A read-only memory is made electrically addressable over a passive conductor matrix, wherein the volume between intersection of two conductors (2; 4) in the matrix defines a memory cell (5). Data are stored as impedance values in the memory cells. The memory cells (5) comprise either an isolating material (6) which provides high impedance or one or more inorganic or organic semiconductors (9), preferably with an anisotropic conducting property. The semiconductor material (9) forms a diode junction at the interface to a metallic conductor (2; 4) in the matrix. By suitable arrangement of respectively the isolating material (6) and semiconductor material (9) in the memory cells these may be given a determined impedance value which may be read electrically and corresponds to logical values in a binary or multi-valued code. One or more read-only memories (ROM) may be provided on a semiconductor substrate (1) which also comprises driver and control circuits (13), to accomplish a read-only memory device. The device may be realized either planar or also volumetrically by stacking several read-only memories (ROM) in horizontal layers (15) and connecting them with the substrate (1) via addressing buses.
摘要翻译：只读存储器在无源导体矩阵上可电寻址，其中矩阵中两个导体（2; 4）的相交之间的体积限定了存储单元（5）。数据作为阻抗值存储在存储单元中。存储单元（5）包括提供高阻抗的隔离材料（6）或一个或多个无机或有机半导体（9），优选具有各向异性导电性能。半导体材料（9）在与基体中的金属导体（2; 4）的界面处形成二极管结。通过分别将存储单元中的隔离材料（6）和半导体材料（9）适当地布置，这些可以被给予确定的阻抗值，其可以被电读取并对应于二值或多值代码中的逻辑值。可以在也包括驱动器和控制电路（13）的半导体衬底（1）上提供一个或多个只读存储器（ROM），以实现只读存储器件。该装置可以通过在水平层（15）中堆叠几个只读存储器（ROM）并且经由寻址总线将其与衬底（1）连接来实现平面或体积式地实现。

16. 发明授权

US06937500B2 Method for operating a ferroelectric of electret memory device, and a device of this kind 有权
标题翻译：操作驻极体存储装置的铁电体的方法以及这种装置
公开(公告)号：US06937500B2
公开(公告)日：2005-08-30
申请号：US10659428
申请日：2003-09-11
申请人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad , Per Bröms , Per Sandström , Mats Johansson
发明人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad , Per Bröms , Per Sandström , Mats Johansson
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A matrix-addressable ferroelectric or electret memory device and a method of operating are explained. The method includes applying a first plurality of voltage difference across a first and a second set of electrodes in the memory when data are read, and applying a second plurality of voltage differences when data are refreshed or rewritten. The first and second plurality of voltage differences correspond to sets of potential levels comprising time sequences of voltage pulses. At least one parameter indicative of a change in a memory cell response is used for determining at least one correction factor for the voltage pulses, whereby the pulse parameter is adjusted accordingly. The memory device comprises means for determining the at least one parameter, a calibration memory connected with means for determining the correction factor, and control circuits for adjusting pulse parameters as applied to read and write operations in the memory device.
摘要翻译：说明矩阵寻址铁电或驻极体存储器件及其操作方法。该方法包括当读取数据时在存储器中的第一和第二组电极上施加第一多个电压差，以及当刷新或重写数据时施加第二多个电压差。第一和第二多个电压差对应于包括电压脉冲的时间序列的电位电平集合。指示存储器单元响应的变化的至少一个参数用于确定电压脉冲的至少一个校正因子，从而相应地调整脉冲参数。存储器件包括用于确定至少一个参数的装置，与用于确定校正因子的装置连接的校准存储器以及用于调整应用于存储器件中的读和写操作的脉冲参数的控制电路。

17. 发明授权

US06841818B2 Non-volatile memory device utilizing dueterated materials 失效
标题翻译：使用二元材料的非易失性存储器件
公开(公告)号：US06841818B2
公开(公告)日：2005-01-11
申请号：US10229178
申请日：2002-08-28
申请人： Hans Gude Gudesen , Per-Erik Nordal
发明人： Hans Gude Gudesen , Per-Erik Nordal
IPC分类号： G11C11/22 , H01L27/115 , H01L29/76
CPC分类号： H01L27/11502 , G11C11/22
摘要： In a non-volatile memory device that includes an electrically polarizable dielectric memory material with ferroelectric or electret properties and capable of exhibiting hysteresis and remanence, wherein the memory material includes one or more polymers, at least one of these polymers is a deuterated polymer.
摘要翻译：在包括具有铁电或驻极体性质并且能够显示滞后和剩磁的电极化电介质存储材料的非易失性存储器件中，其中所述记忆材料包括一种或多种聚合物，这些聚合物中的至少一种是氘代聚合物。

18. 发明授权

US06380553B2 Multilayer matrix-addressable logic device with a plurality of individually matrix-addressable and stacked thin films of an active material 失效
标题翻译：多层矩阵可寻址逻辑器件，具有多个单独矩阵寻址并堆叠的活性材料薄膜
公开(公告)号：US06380553B2
公开(公告)日：2002-04-30
申请号：US09255579
申请日：1999-02-22
申请人： Hans Gude Gudesen , Per-Erik Nordal
发明人： Hans Gude Gudesen , Per-Erik Nordal
IPC分类号： H01L3900
CPC分类号： G11C13/02 , G11C2213/71 , G11C2213/77
摘要： In a multilayer logic device or processor device with a plurality of individually matrix-addressable stacked thin layers of an active material, the active material in each layer is provided between a first electrode set and a second electrode set wherein the electrodes in the first set realize the columns and the electrodes in the second set the rows in an orthogonal array. The intersections between the electrodes in the array define logic cells in the layer of active material, and the stacked layers of active material are provided on a common supporting substrate. A separation layer with determined electrical or thermal properties is provided between each layer of active material.
摘要翻译：在具有多个单独矩阵寻址的活性材料层叠薄层的多层逻辑器件或处理器器件中，每层中的活性材料设置在第一电极组和第二电极组之间，其中第一组中的电极实现第二列中的列和电极以正交阵列设置行。阵列中的电极之间的交点定义了活性材料层中的逻辑单元，并且活动材料的堆叠层设置在共同的支撑衬底上。在每层活性材料之间提供具有确定的电或热特性的分离层。

19. 发明授权

US06236587B1 Read-only memory and read-only memory devices 失效
标题翻译：只读存储器和只读存储器件
公开(公告)号：US06236587B1
公开(公告)日：2001-05-22
申请号：US09297467
申请日：1999-09-13
申请人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad
发明人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad
IPC分类号： G11C1706
CPC分类号： G11C13/0014 , B82Y10/00 , G11C11/5664 , G11C11/5692 , G11C13/0016 , H01L27/112
摘要： A read-only memory is made electrically addressable over a passive conductor matrix, wherein at least a portion of the volume between intersection of two conductors (2;4) in the matrix defines a memory cell (5) in the read-only memory. Data are stored as impedance values in the memory cells. The memory cells (5) comprise either an isolating material (6) which provides high impedance or one or more inorganic or organic semiconductors (9), preferably with an anisotropic conducting property. The semiconductor material (9) forms a diode junction at the interface to a metallic conductor (2;4) in the matrix. By suitable arrangement of respectively the isolating material (6) and semiconductor material (9) in the memory cells these may be given a determined impedance value which may be read electrically and corresponds to logical values in a binary or multi-valued code. The read-only memory device may be realized either as planar or also volumetrically by stacking several read-only memories (ROM) above each other and connecting them with the substrate (1) via addressing buses (14). Such read-only memory devices may be implemented on memory cards with standard card interfaces and used for storage of source information.
摘要翻译：只读存储器在无源导体矩阵上可电寻址，其中在矩阵中的两个导体（2; 4）的相交之间的体积的至少一部分限定了只读存储器中的存储器单元（5）。数据作为阻抗值存储在存储单元中。存储单元（5）包括提供高阻抗的隔离材料（6）或一个或多个无机或有机半导体（9），优选具有各向异性导电性能。半导体材料（9）在与基体中的金属导体（2; 4）的界面处形成二极管结。通过分别将存储单元中的隔离材料（6）和半导体材料（9）适当地布置，这些可以被给予确定的阻抗值，其可以被电读取并对应于二值或多值代码中的逻辑值。只读存储器件可以通过堆叠多个彼此之间的多个只读存储器（ROM）而通过寻址总线（14）与基板（1）连接来实现平面或体积。这种只读存储器件可以在具有标准卡接口的存储卡上实现并用于存储源信息。

20. 发明授权

US6115344A Device and method for optical data storage having multiple optical states 失效
标题翻译：具有多个光学状态的光学数据存储装置和方法
公开(公告)号：US6115344A
公开(公告)日：2000-09-05
申请号：US952421
申请日：1997-11-20
申请人： Hans Gude Gudesen , Per-Erik Nordal
发明人： Hans Gude Gudesen , Per-Erik Nordal
IPC分类号： G11B7/00 , G11B7/004 , G11B7/0045 , G11B7/005 , G11B7/013 , G11B7/24085 , G11B7/244 , G11C11/56 , G11C13/04
CPC分类号： G11B7/24085 , G11B7/00451 , G11B7/00455 , G11B7/0052 , G11B7/244 , G11C11/56 , G11C13/04
摘要： The optical storage device and method includes a fluorescent layer arranged on a substrate and having a surface. The fluorescent layer is composed of fluorescent dye molecules embedded in a transparent polymeric base material. A group of data-carrying structures are arranged in the fluorescent layer. Each of the data-carrying structures has more than two optical states represented by a specific degree of quenching of fluorescence emitted from the data-carrying structure when irradiated with a fluorescence exciting radiation.
摘要翻译： PCT No.PCT / NO96 / 00125 Sec。 371日期：1997年11月20日 102（e）日期1997年11月20日PCT提交1996年5月22日PCT公布。公开号WO96 / 37888 日期：1996年11月28日光存储器件和方法包括布置在衬底上并具有表面的荧光层。荧光层由嵌入透明聚合物基材中的荧光染料分子组成。一组数据携带结构被布置在荧光层中。数据携带结构中的每一个具有由用荧光激发辐射照射时由数据载体结构发射的荧光的特定淬灭程度表示的两种以上的光学状态。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式