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11. 发明授权

US5488234A Semiconductor element having bivalent and VI group element and an insulating layer 失效
标题翻译：具有二价和VI族元素的半导体元件和绝缘层
公开(公告)号：US5488234A
公开(公告)日：1996-01-30
申请号：US214281
申请日：1994-03-17
申请人： Shigeo Yoshii , Kazuhiro Okawa , Ayumi Tsujimura , Tsuneo Mitsuyu
发明人： Shigeo Yoshii , Kazuhiro Okawa , Ayumi Tsujimura , Tsuneo Mitsuyu
IPC分类号： H01L33/28 , H01L33/64 , H01S5/20 , H01S5/22 , H01S5/327 , H01L33/00 , H01L29/22 , H01L31/0256 , H01L31/0296
CPC分类号： H01L33/641 , H01L33/285 , H01S5/327 , H01S5/2063 , H01S5/2211
摘要： Ions are implanted to the n-type or p-type semiconductor layers of a semiconductor element, which includes a semiconductor having a multilayer structure on a substrate, a metal electrode on one entire surface of the semiconductor and a metal section partially formed on the metal electrode, in an amount from 10.sup.12 ions/cm.sup.2 to 10.sup.18 ions/cm.sup.2, thus forming an insulating layer in the n-type or p-type semiconductor layers.
摘要翻译：将离子注入到半导体元件的n型或p型半导体层中，半导体元件包括在基板上具有多层结构的半导体，半导体的整个表面上的金属电极和部分地形成在金属上的金属部分电极，其量为1012离子/ cm 2至1018离子/ cm 2，因此在n型或p型半导体层中形成绝缘层。

12. 发明授权

US07919596B2 Method of arranging ferritin and method of arranging inorganic particles 有权
标题翻译：安排铁蛋白的方法和无机颗粒的排列方法
公开(公告)号：US07919596B2
公开(公告)日：2011-04-05
申请号：US12320556
申请日：2009-01-29
申请人： Shigeo Yoshii , Kazuaki Nishio , Shinya Kumagai , Ichiro Yamashita
发明人： Shigeo Yoshii , Kazuaki Nishio , Shinya Kumagai , Ichiro Yamashita
IPC分类号： C07K14/00 , H01L21/00 , H01L21/314 , H01L21/471
CPC分类号： C07K14/47 , B82B1/00 , B82Y30/00
摘要： To provide a method of arranging ferritin by which a high rate of the number of the molecular film spots on which sole ferritin molecule was arranged in effect, with respect to total number of the molecular film spots provided for arranging ferritin (sole arrangement rate) is achieved is objected to. Specifically, in Fer8 ferritin having a sequence excluding 7 amino acids of from the second to the eighth, from an amino acid sequence (Fer0 sequence) translated from a naturally occurring DNA sequence, lysine at position 91 is substituted with glutamic acid.
摘要翻译：为了提供一种安排铁蛋白的方法，相对于提供用于安排铁蛋白的总分子膜点数（单独排列速率），通过该铁蛋白排列高分子膜斑点的数量，单个铁蛋白分子排列有效的方法是：实现是反对的。具体而言，在来自第二至第八的7个氨基酸序列的Fer8铁蛋白中，从天然存在的DNA序列翻译的氨基酸序列（Fer0序列）中，91位的赖氨酸被谷氨酸取代。

13. 发明授权

US07419849B2 Method for producing single electron semiconductor element 有权
标题翻译：单电子半导体元件的制造方法
公开(公告)号：US07419849B2
公开(公告)日：2008-09-02
申请号：US11878691
申请日：2007-07-26
申请人： Shinya Kumagai , Shigeo Yoshii , Nozomu Matsukawa , Ichiro Yamashita
发明人： Shinya Kumagai , Shigeo Yoshii , Nozomu Matsukawa , Ichiro Yamashita
IPC分类号： H01L51/40
CPC分类号： H01L29/7613 , B82Y10/00 , H01L29/66439 , H01L49/006 , Y10S438/962 , Y10S977/773
摘要： The present invention provides a method for production of a single electron semiconductor element (SET) in which a quantum dot is selectively arranged in a nano gap between fine electrodes, whereby the product yield is significantly improved, leading to excellent practical applicability. The method for production of SET of the present invention is characterized in that a solution containing ferritin including a metal or semiconductor particle therein, and a nonionic surfactant is dropped on a substrate having a source electrode and a drain electrode formed by laminating a titanium film and a film of a metal other than titanium, whereby the ferritin is selectively arranged in a nano gap between the source electrode/drain electrode.
摘要翻译：本发明提供一种单电子半导体元件（SET）的制造方法，其中量子点选择性地排列在细电极之间的纳米间隙中，从而显着提高了产品产率，从而实现了优异的实用性。本发明的SET的制造方法的特征在于，将含有金属或半导体粒子的铁蛋白和非离子表面活性剂的溶液滴落在具有源极电极和漏电极的基板上，所述源极和漏极通过层叠钛膜和除钛以外的金属的膜，由此铁素体选择性地排列在源电极/漏电极之间的纳米间隙中。

14. 发明申请

US20050067615A1 Semiconductor device and fabrication method thereof 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20050067615A1
公开(公告)日：2005-03-31
申请号：US10962492
申请日：2004-10-13
申请人： Shigeo Yoshii , Nobuyuki Otsuka , Koichi Mizuno , Asamira Suzuki
发明人： Shigeo Yoshii , Nobuyuki Otsuka , Koichi Mizuno , Asamira Suzuki
IPC分类号： H01L29/68 , H01L29/06 , H01L29/08 , H01L29/12 , H01L29/737 , H01L31/0328
CPC分类号： B82Y10/00 , H01L29/0817 , H01L29/127 , H01L29/7371
摘要： The present invention relates to a semiconductor device comprising a substrate (101); a semiconductor multi-layered structure formed on the substrate (101); the semiconductor multi-layered structure comprising an emitter layer (102), a base layer (105), and a collector layer (107), each composed of a group III-V n-type compound semiconductor and layered in this order; a quantum dot barrier layer (103) disposed between the emitter layer (102) and the base layer (105); a collector electrode (110), a base electrode (111) and an emitter electrode (112) connected to the collector layer (107), the base layer (105) and the emitter layer (102), respectively; the quantum dot barrier layer (103) comprising a plurality of quantum dots (103c); the quantum dots (103) being sandwiched between first and second barrier layers (103a, 103d) from the emitter layer side and the base layer side, respectively; each of the quantum dots (103c) having a convex portion that is convex to the base layer (105); a base layer (105) side interface (d1) in the second barrier layer (103d), and collector layer side and emitter layer side interfaces (d2, d3) in the base layer (105); the interfaces having curvatures (d12, d22, d23) that are convex to the collector layer (107) corresponding to the convex portions of the quantum dots (103c).
摘要翻译：本发明涉及一种包括衬底（101）的半导体器件; 形成在所述基板（101）上的半导体多层结构; 所述半导体多层结构包括由III-V族N型化合物半导体构成的发射极层（102），基极层（105）和集电极层（107），并且按顺序层叠; 设置在发射极层（102）和基极层（105）之间的量子点势垒层（103）; 分别与集电极层（107）连接的集电极（110），基极（111）和发射极（112），基极层（105）和发射极层（102）所述量子点势垒层（103）包括多个量子点（103c）; 量子点（103）分别从发射极侧和基极侧夹在第一和第二阻挡层（103a，103d）之间; 每个量子点（103c）具有与基底层（105）凸起的凸部; 第二阻挡层（103d）中的基底层（105）侧界面（d1），以及基底层（105）中的集电极层侧和发射极层侧界面（d2，d3）具有对应于量子点（103c）的凸部的与集电体层（107）凸起的曲率（d12，d22，d23）的界面。

15. 发明申请

US20050042386A1 Method of production of nano particle dispersed composite material 有权
标题翻译：纳米颗粒分散复合材料的生产方法
公开(公告)号：US20050042386A1
公开(公告)日：2005-02-24
申请号：US10864881
申请日：2004-06-10
申请人： Masahiro Nunoshita , Ichiro Yamashita , Shigeo Yoshii
发明人： Masahiro Nunoshita , Ichiro Yamashita , Shigeo Yoshii
IPC分类号： B05D3/02 , H01L21/266 , H01L29/12 , H01L29/15
CPC分类号： H01L29/127 , B82Y10/00 , B82Y30/00 , C01P2004/64 , H01L21/266 , H01L29/158 , Y10S438/917 , Y10S438/918 , Y10S438/962
摘要： A method of the production of a nanoparticle dispersed composite material capable of controlling a particle size and a three dimensional arrangement of the nanoparticles is provided. The method of the production of a nanoparticle dispersed composite material of the present invention includes a step (a) of arranging a plurality of core fine particle-protein complexes having a core fine particle, which comprises an inorganic material, internally included within a protein on the top surface of a substrate, a step (b) of removing the protein, a step (c) of conducting ion implantation from the top surface of the substrate, and a step (d) of forming nanoparticles including the ion implanted by the ion implantation as a raw material, inside of the substrate.
摘要翻译：提供了能够控制纳米颗粒的粒度和三维排列的纳米颗粒分散复合材料的制造方法。制备本发明的纳米颗粒分散复合材料的方法包括：将包含内部包含在蛋白质内的无机材料的多个具有核心细颗粒的核心细颗粒 - 蛋白复合物排列在衬底的顶表面，去除蛋白质的步骤（b），从衬底的顶表面进行离子注入的步骤（c）和形成纳米颗粒的步骤（d），其包括由离子注入的离子作为原料植入，在基板的内部。

16. 发明授权

US5822347A Semiconductor light emitting device and method for fabricating the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US5822347A
公开(公告)日：1998-10-13
申请号：US589488
申请日：1996-01-22
申请人： Toshiya Yokogawa , Shigeo Yoshii , Yoichi Sasai
发明人： Toshiya Yokogawa , Shigeo Yoshii , Yoichi Sasai
IPC分类号： H01L33/00 , H01L33/10 , H01L33/28 , H01L33/46 , H01S5/183 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/327 , H01S5/347 , H01S3/19 , H01L29/22
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/0083 , H01L33/0087 , H01L33/465 , H01S5/18341 , H01S5/327 , H01S5/347 , H01L33/105 , H01S2301/166 , H01S5/0207 , H01S5/02461 , H01S5/18308 , H01S5/18369 , H01S5/2063 , H01S5/2081 , H01S5/2211 , H01S5/2214 , H01S5/2231
摘要： In a II-VI group semiconductor laser, on an n type GaAs substrate, an n type ZnSe layer, a multiquantum well layer of a ZnCdSe well layer and a ZnSe barrier layer, and a p type ZnSe layer are deposited in this order. A polycrystalline ZnO layer is provided on both sides of the p type ZnSe layer for constricting current. Multifilm reflecting mirrors, respectively constituted with a polycrystalline SiO.sub.2 layer and a polycrystalline TiO.sub.2 layer, for obtaining laser oscillation are provided on the p type ZnSe layer as well as on a surface of the n type ZnSe layer exposed by etching the GaAs substrate. Furthermore, a p type AuPd electrode and an n type AuGeNi electrode are respectively provided. Alternatively, on an n type GaAs substrate, an n type ZnSe epitaxial layer, an n type ZnMgSSe cladding layer, an n type ZnSSe optical waveguide layer, a ZnCdSe active layer, a p type ZnSSe optical waveguide layer, a p type ZnMgSSe cladding layer, a p type ZnTe contact layer and a polycrystalline ZnO burying layer are respectively formed. Furthermore, a p type AuPd electrode and an n type In electrode are respectively provided.
摘要翻译：在II-VI族半导体激光器中，在n型GaAs衬底上依次沉积n型ZnSe层，ZnCdSe阱层的多量子阱层和ZnSe阻挡层以及p型ZnSe层。在p型ZnSe层的两侧设置多晶ZnO层，用于收缩电流。在p型ZnSe层以及通过蚀刻GaAs衬底暴露的n型ZnSe层的表面上，设置分别由用于获得激光振荡的多晶SiO 2层和多晶TiO 2层构成的多片反射镜。此外，分别设置p型AuPd电极和n型AuGeNi电极。或者，在n型GaAs衬底上，n型ZnSe外延层，n型ZnMgSSe覆层，n型ZnSSe光波导层，ZnCdSe有源层，ap型ZnSSe光波导层，ap型ZnMgSSe覆层，ap 分别形成ZnTe接触层和多晶ZnO掩埋层。此外，分别设置p型AuPd电极和n型In电极。

17. 发明申请

US20120309033A1 METHOD FOR DETECTING AN ANTIGEN 有权
标题翻译：检测抗原的方法
公开(公告)号：US20120309033A1
公开(公告)日：2012-12-06
申请号：US13536202
申请日：2012-06-28
申请人： Kazuaki Nishio , Nozomu Matsukawa , Shigeo Yoshii
发明人： Kazuaki Nishio , Nozomu Matsukawa , Shigeo Yoshii
IPC分类号： G01N21/78
CPC分类号： G01N33/542 , C12Q1/26 , G01N33/54373 , G01N2333/90287
摘要： The present invention relates to a method for detecting an antigen with use of an antibody and an enzyme. Specifically, the present invention provides a method for detecting an antigen without use of a labeled-antibody. the method comprises immersing particles in a first buffer solution which is predicted to contain the antigen; wherein an antibody and a multi-copper oxidase CueO are immobilized on each surface of the particles, and the antibody reacts specifically with the antigen. The method further comprises the following steps recovering the obtained particles; mixing the particles recovered, an oxidation-reduction indicator (reductant), and a second buffer solution so as to prepare a reaction solution; measuring an activity degree of the multi-copper oxidase CueO contained in the reaction solution; determining that the first buffer solution contains the antigen based on the above activity degree.
摘要翻译：本发明涉及使用抗体和酶检测抗原的方法。具体而言，本发明提供了不使用标记抗体来检测抗原的方法。该方法包括将颗粒浸入预测含有抗原的第一缓冲溶液中; 其中抗体和多铜氧化酶CueO固定在颗粒的每个表面上，并且抗体与抗原特异性反应。该方法还包括以下步骤：回收所获得的颗粒; 混合回收的颗粒，氧化还原指示剂（还原剂）和第二缓冲溶液以制备反应溶液; 测定反应溶液中所含的多铜氧化酶CueO的活度; 基于上述活性度确定第一缓冲溶液含有抗原。

18. 发明授权

US08309345B2 Method for detecting an antigen 有权
标题翻译：检测抗原的方法
公开(公告)号：US08309345B2
公开(公告)日：2012-11-13
申请号：US13296879
申请日：2011-11-15
申请人： Kazuaki Nishio , Nozomu Matsukawa , Shigeo Yoshii
发明人： Kazuaki Nishio , Nozomu Matsukawa , Shigeo Yoshii
IPC分类号： C12M1/34 , C12M3/00
CPC分类号： G01N33/54306 , C12Q1/26
摘要： Provided is a method for detecting an antigen without use of a labeled-antibody. A support having an antibody and a multi-copper oxidase CueO immobilized thereon is brought into contact with a first buffer solution containing the antigen, a current is measured by a potentiostat method using the support and a second buffer solution, and when the measured current is greater than or equal to 1.5×(blank value), it is determined that the antigen exists. The second buffer solution contains a substrate of the CueO and has an ionic strength falling within a range of not less than 0.3 mM and not more than 1.0 mM.
摘要翻译：提供了不使用标记抗体来检测抗原的方法。使具有固定在其上的抗体和多铜氧化酶CueO的载体与含有抗原的第一缓冲溶液接触，通过使用载体和第二缓冲溶液的恒电位法测量电流，并且当测量的电流为大于或等于1.5×（空白值），则确定存在抗原。第二缓冲溶液含有CueO的底物，离子强度在0.3mM以上1.0mM以下的范围内。

19. 发明授权

US07323725B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07323725B2
公开(公告)日：2008-01-29
申请号：US10962492
申请日：2004-10-13
申请人： Shigeo Yoshii , Nobuyuki Otsuka , Koichi Mizuno , Asamira Suzuki
发明人： Shigeo Yoshii , Nobuyuki Otsuka , Koichi Mizuno , Asamira Suzuki
IPC分类号： H01L29/739 , H01L31/00
CPC分类号： B82Y10/00 , H01L29/0817 , H01L29/127 , H01L29/7371
摘要： The present invention relates to a semiconductor device having a multi-layered structure comprising an emitter layer, a base layer, and a collector layer, each composed of a group III-V n-type compound semiconductor in this order; a quantum dot barrier layer disposed between the emitter layer and the base layer; a collector electrode, a base electrode and the emitter layer all connected to an emitter electrode; the quantum dot barrier layer having a plurality of quantum dots being sandwiched between first and second barrier layers from the emitter layer side and the base layer side, respectively and each having a portion that is convex to the base layer; a base layer side interface in the second barrier layer, and collector layer side and emitter layer side interfaces in the base layer having curvatures that are convex to the collector layer corresponding to the convex portions of the quantum dots.
摘要翻译：本发明涉及一种具有多层结构的半导体器件，该多层结构包括依次由III-V族n型化合物半导体构成的发射极层，基极层和集电极层; 设置在发射极层和基极层之间的量子点势垒层; 集电极，基极和发射极层全部连接到发射极; 所述量子点势垒层分别具有从所述发射极层侧和所述基极侧侧夹在第一和第二阻挡层之间的多个量子点，并且各自具有与所述基极层相对的部分。第二阻挡层中的基底层侧界面，基底层中的集电极层侧发射极侧接合具有对应于量子点的凸部的集电极层的曲率的曲率。

20. 发明授权

US06917457B2 Process of fabricating semiconductor light emitting device 失效
标题翻译：制造半导体发光器件的工艺
公开(公告)号：US06917457B2
公开(公告)日：2005-07-12
申请号：US10889027
申请日：2004-07-13
申请人： Nobuyuki Otsuka , Shigeo Yoshii , Masahiro Kitoh , Toshiya Yokogawa
发明人： Nobuyuki Otsuka , Shigeo Yoshii , Masahiro Kitoh , Toshiya Yokogawa
IPC分类号： G02F1/015 , G02F1/017
CPC分类号： B82Y20/00 , G02F1/015 , G02F1/017 , G02F2202/32 , G02F2203/02 , G02F2203/10
摘要： A vertical optical modulator comprising: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type bonded to the first semiconductor layer; a third semiconductor layer of the second conductivity type; a dielectric layer formed between the second semiconductor layer and the third semiconductor layer; an antenna electrode having a plurality of conductive pieces which are formed within the dielectric layer so as to have a net-like shape as a whole, to be separated from one another at the intersections of the net-like shape, and to be in contact with both the second semiconductor layer and the third semiconductor layer; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the third semiconductor layer.
摘要翻译：一种垂直光学调制器，包括：第一导电类型的第一半导体层; 第二导电类型的第二半导体层结合到第一半导体层; 第二导电类型的第三半导体层; 形成在所述第二半导体层和所述第三半导体层之间的电介质层; 具有多个导电片的天线电极，其形成在电介质层内以形成网状整体，在网状形状的交点处彼此分离并且接触同时具有第二半导体层和第三半导体层; 电连接到第一半导体层的第一电极; 以及电连接到第三半导体层的第二电极。

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