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11. 发明授权

US07906259B2 Reflective mask blank for EUV lithography 有权
标题翻译： EUV光刻用反光罩
公开(公告)号：US07906259B2
公开(公告)日：2011-03-15
申请号：US12205967
申请日：2008-09-08
申请人： Kazuyuki Hayashi , Kazuo Kadowaki , Takashi Sugiyama , Masaki Mikami
发明人： Kazuyuki Hayashi , Kazuo Kadowaki , Takashi Sugiyama , Masaki Mikami
IPC分类号： G03F1/00
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/22
摘要： To provide a reflective mask blank for EUV lithography having an absorber layer, which presents a low reflectance to a light in the wavelength ranges of EUV light and pattern inspection light, and which is easily controlled to have desired film composition and film thickness. A reflective mask blank for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), boron (B), silicon (Si) and nitrogen (N), and in the absorber layer, the B content is at least 1 at % and less than 5 at %, the Si content is from 1 to 25 at %, and the compositional ratio of Ta to N (Ta:N) is from 8:1 to 1:1.
摘要翻译：为了提供具有吸收层的EUV光刻用的反射掩模板，其对EUV光和图案检查光的波长范围内的光呈现低反射率，并且易于控制以具有所需的膜组成和膜厚度。一种用于EUV光刻的反射掩模板，包括基板和用于反射EUV光的反射层和用于吸收在基板上依次形成的EUV光的吸收层，其中吸收层包含钽（Ta），硼（B），硅（Si）和氮（N），并且在吸收层中，B含量为至少1原子％且小于5原子％，Si含量为1至25原子％，Ta的组成比至N（Ta：N）为8:1至1:1。

12. 发明授权

US07189460B2 High reflectance mirror 失效
标题翻译：高反射镜
公开(公告)号：US07189460B2
公开(公告)日：2007-03-13
申请号：US10875270
申请日：2004-06-25
申请人： Naoko Shin , Takuji Oyama , Kazuo Kadowaki
发明人： Naoko Shin , Takuji Oyama , Kazuo Kadowaki
IPC分类号： B32B9/00
CPC分类号： G02B5/0858 , C23C14/024 , C23C14/086 , Y10T428/31678
摘要： A high reflectance mirror having a high reflectance in a visible-light region, being excellent in durability such as a moisture resistance, a saltwater resistance, etc. and having small dependence on incident angle (i.e., the fluctuation of the reflectance depending on an incident angle of light is little) is provided.The high reflectance mirror comprises a substrate and a silver film, a low refractive index film and a high refractive index film laminated on the substrate in this order wherein an adhesion improving film is formed on the silver film surface on the opposite side of the substrate, the extinction coefficient of the low refractive index film is at most 0.01, the extinction coefficient of the high refractive index film is at most 0.01, the adhesion improving film is an oxide film and the extinction coefficient of the adhesion improving film is at most 0.1.
摘要翻译：在可见光区域具有高反射率的高反射率反射镜，耐湿性，耐盐水性等耐久性优异并且对入射角的依赖性小（即，取决于事件的反射率的波动）光的角度很小）。高反射镜包括基板和基板上层叠有低折射率膜和高折射率膜的基板，在该基板的相反侧的银膜表面上形成有粘附改善膜，低折射率膜的消光系数为0.01以下，高折射率膜的消光系数为0.01以下，粘合改善膜为氧化膜，粘合改善膜的消光系数为0.1以下。

13. 发明申请

US20110194578A1 LASER LIGHT-SOURCE APPARATUS AND PROJECTOR APPARATUS 有权
标题翻译：激光灯装置和投影仪
公开(公告)号：US20110194578A1
公开(公告)日：2011-08-11
申请号：US13021108
申请日：2011-02-04
申请人： Tatsuro HIROSE , Taisuke Murata , Kazuo Kadowaki
发明人： Tatsuro HIROSE , Taisuke Murata , Kazuo Kadowaki
IPC分类号： H01S3/04
CPC分类号： H01S5/02469 , H01S5/02208 , H01S5/02256 , H01S5/02292 , H01S5/4093 , H04N9/3129 , H04N9/3144 , H04N9/3161
摘要： A laser light-source apparatus according to the present invention is equipped with: a laser-driving circuit board, thermal insulators that are placed on the laser-driving circuit board; a heat receiving plate that is placed on the thermal insulators and thermally insulated from the laser-driving circuit board, a laser light-source module that is installed on the heat receiving plate so as to be thermally connected to the heat receiving plate and is also electrically connected to the laser-driving circuit board so as to be driven thereby, and a heat sink that is thermally connected to the heat receiving plate via a heat pipe.
摘要翻译：根据本发明的激光光源装置装备有：激光驱动电路板，放置在激光驱动电路板上的绝热体; 放置在热绝缘体上并与激光驱动电路板热绝缘的热接收板，安装在受热板上以与热接收板热连接的激光光源模块，也是电连接到激光驱动电路板以被驱动，以及散热器，其通过热管与热接收板热连接。

14. 发明授权

US07833682B2 Reflective mask blank for EUV lithography and substrate with functional film for the same 有权
标题翻译：用于EUV光刻的反光掩模板和具有功能膜的基板
公开(公告)号：US07833682B2
公开(公告)日：2010-11-16
申请号：US12198912
申请日：2008-08-27
申请人： Kazuyuki Hayashi , Kazuo Kadowaki , Takashi Sugiyama , Masaki Mikami
发明人： Kazuyuki Hayashi , Kazuo Kadowaki , Takashi Sugiyama , Masaki Mikami
IPC分类号： G03F1/00 , B32B17/06
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/22 , G21K1/062
摘要： To provide an EUV mask blank of which the decrease in the reflectance during EUV exposure is suppressed, and a substrate with a functional film to be used for production of such an EUV mask blank.A substrate with a reflective layer for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer formed in this order on the substrate, wherein the protective layer contains ruthenium (Ru) and at least one element selected from the group consisting of boron (B) and zirconium (Zr); and in the protective layer, the Ru content is from 70 at % to 95 at % and the total content of B and Zr is from 5 at % to 30 at %.
摘要翻译：提供抑制EUV曝光期间反射率降低的EUV掩模空白，以及用于制造这种EUV掩模空白的具有功能膜的基板。具有用于EUV光刻的反射层的衬底，包括衬底和用于反射EUV光的反射层和用于保护在衬底上依次形成的反射层的保护层，其中保护层包含钌（Ru）并且在选自硼（B）和锆（Zr）的至少一种元素; 并且在保护层中，Ru含量为70原子％至95原子％，B和Zr的总含量为5原子％至30原子％。

15. 发明授权

US07718324B2 Reflective mask blank for EUV lithography 有权
标题翻译： EUV光刻用反光罩
公开(公告)号：US07718324B2
公开(公告)日：2010-05-18
申请号：US12028250
申请日：2008-02-08
申请人： Kazuyuki Hayashi , Kazuo Kadowaki , Takashi Sugiyama
发明人： Kazuyuki Hayashi , Kazuo Kadowaki , Takashi Sugiyama
IPC分类号： G03F1/00
CPC分类号： G03F1/24 , G03F1/46 , G03F1/58
摘要： A reflective mask blank for EUV lithography, which comprises a substrate, and a reflective layer to reflect EUV light and an absorber layer to absorb EUV light, formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta) and hafnium (Hf), and in the absorber layer, the content of Hf is from 20 to 60 at. % and the content of Ta is from 40 to 80 at. %, and wherein the absorber layer has a content of N being 0 to at most 35 at. %.
摘要翻译：用于EUV光刻的反射掩模板，其包括基板，以及反射层，用于反射EUV光和吸收层，以吸收在基板上依次形成的EUV光，其中吸收层包含钽（Ta）和铪（ Hf），并且在吸收层中，Hf的含量为20〜60at。％，Ta的含量为40〜80。％，并且其中所述吸收层的N含量为0至至多35at。％。

16. 发明申请

US20090253055A1 REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY, AND SUBSTRATE WITH FUNCTIONAL FILM FOR THE MASK BLANK 有权
标题翻译：用于EUV光刻的反射遮罩和带有功能膜的底片
公开(公告)号：US20090253055A1
公开(公告)日：2009-10-08
申请号：US12483785
申请日：2009-06-12
申请人： Kazuyuki Hayashi , Kazuo Kadowaki , Takashi Sugiyama
发明人： Kazuyuki Hayashi , Kazuo Kadowaki , Takashi Sugiyama
IPC分类号： G03F1/00 , B32B3/10
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/38 , G21K1/062 , Y10T428/24355
摘要： Provided are a substrate with a conductive film for an EUV mask blank in which the generation of particles due to abrasion between an electrostatic chuck and the substrate is prevented; and a substrate with a multilayer reflective film and an EUV mask blank each employing such a substrate with a conductive film.A substrate with a conductive film to be used for producing a reflective mask blank for EUV lithography, the conductive film containing chromium (Cr) and nitrogen (N), the average concentration of N in the conductive film being at least 0.1 atomic % and less than 40 atomic %, the crystal state of at least a surface of the conductive film being amorphous, the sheet resistance of the conductive film being at most 27 Ω/□, and the surface roughness (rms) of the conductive film being at most 0.5 nm.
摘要翻译：提供一种具有用于EUV掩模坯料的导电膜的基板，其中防止了由于静电卡盘和基板之间的磨损而产生的颗粒; 以及具有多层反射膜的基板和使用这种具有导电膜的基板的EUV掩模板。具有用于制造用于EUV光刻的反射掩模板的导电膜的基板，含有铬（Cr）和氮（N）的导电膜，导电膜中的N的平均浓度为至少0.1原子％以下导电膜的至少表面的晶体状态为非晶态，导电膜的薄层电阻为至多27Ω/□，导电膜的表面粗糙度（rms）为0.5以下 nm。

17. 发明申请

US20080199787A1 REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY 失效
标题翻译：反射掩蔽空白用于EUV LITHOGRAPHY
公开(公告)号：US20080199787A1
公开(公告)日：2008-08-21
申请号：US12027680
申请日：2008-02-07
申请人： Kazuyuki Hayashi , Kazuo Kadowaki , Takashi Sugiyama
发明人： Kazuyuki Hayashi , Kazuo Kadowaki , Takashi Sugiyama
IPC分类号： G03F1/00
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/54
摘要： To provide a reflective mask blank for EUV lithography having an absorber layer which has a low reflectance in a wavelength region of EUV light or light for inspection of a pattern and which is easy to control to have a desired layer composition and thickness.A reflective mask blank for EUV lithography, which comprises a substrate, and a reflective layer to reflect EUV light and an absorber layer to absorb EUV light, formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta) and hafnium (Hf), and in the absorber layer, the content of Hf is from 20 to 60 at. % and the content of Ta is from 40 to 80 at. %.
摘要翻译：为了提供EUV光刻用的反射掩模板，其具有在EUV光或光的波长区域具有低反射率的吸收层，用于检查图案，并且易于控制以具有期望的层组成和厚度。用于EUV光刻的反射掩模板，其包括基板，以及反射层，用于反射EUV光和吸收层，以吸收在基板上依次形成的EUV光，其中吸收层包含钽（Ta）和铪（ Hf），并且在吸收层中，Hf的含量为20〜60at。％，Ta的含量为40〜80。％。

18. 发明申请

US20050008879A1 High reflectance mirror 失效
标题翻译：高反射镜
公开(公告)号：US20050008879A1
公开(公告)日：2005-01-13
申请号：US10875270
申请日：2004-06-25
申请人： Naoko Shin , Takuji Oyama , Kazuo Kadowaki
发明人： Naoko Shin , Takuji Oyama , Kazuo Kadowaki
IPC分类号： G02B5/08 , G02B1/10 , B32B15/04 , B32B9/00 , B32B9/06
CPC分类号： G02B5/0858 , C23C14/024 , C23C14/086 , Y10T428/31678
摘要： A high reflectance mirror having a high reflectance in a visible-light region, being excellent in durability such as a moisture resistance, a saltwater resistance, etc. and having small dependence on incident angle (i.e., the fluctuation of the reflectance depending on an incident angle of light is little) is provided. The high reflectance mirror comprises a substrate and a silver film, a low refractive index film and a high refractive index film laminated on the substrate in this order wherein an adhesion improving film is formed on the silver film surface on the opposite side of the substrate, the extinction coefficient of the low refractive index film is at most 0.01, the extinction coefficient of the high refractive index film is at most 0.01, the adhesion improving film is an oxide film and the extinction coefficient of the adhesion improving film is at most 0.1.
摘要翻译：在可见光区域具有高反射率的高反射率反射镜，耐湿性，耐盐水性等耐久性优异并且对入射角的依赖性小（即，取决于事件的反射率的波动）光的角度很小）。高反射镜包括基板和基板上层叠有低折射率膜和高折射率膜的基板，在该基板的相反侧的银膜表面上形成有粘附改善膜，低折射率膜的消光系数为0.01以下，高折射率膜的消光系数为0.01以下，粘合改善膜为氧化膜，粘合改善膜的消光系数为0.1以下。

19. 发明授权

US08422523B2 Laser light-source apparatus and projector apparatus 有权
标题翻译：激光光源设备和投影仪设备
公开(公告)号：US08422523B2
公开(公告)日：2013-04-16
申请号：US13021108
申请日：2011-02-04
申请人： Tatsuro Hirose , Taisuke Murata , Kazuo Kadowaki
发明人： Tatsuro Hirose , Taisuke Murata , Kazuo Kadowaki
IPC分类号： H01S3/04
CPC分类号： H01S5/02469 , H01S5/02208 , H01S5/02256 , H01S5/02292 , H01S5/4093 , H04N9/3129 , H04N9/3144 , H04N9/3161
摘要： A laser light-source apparatus according to the present invention is equipped with: a laser-driving circuit board, thermal insulators that are placed on the laser-driving circuit board; a heat receiving plate that is placed on the thermal insulators and thermally insulated from the laser-driving circuit board, a laser light-source module that is installed on the heat receiving plate so as to be thermally connected to the heat receiving plate and is also electrically connected to the laser-driving circuit board so as to be driven thereby, and a heat sink that is thermally connected to the heat receiving plate via a heat pipe.
摘要翻译：根据本发明的激光光源装置装备有：激光驱动电路板，放置在激光驱动电路板上的绝热体; 放置在热绝缘体上并与激光驱动电路板热绝缘的热接收板，安装在受热板上以与热接收板热连接的激光光源模块，也是电连接到激光驱动电路板以被驱动，以及散热器，其通过热管与热接收板热连接。

20. 发明授权

US08088538B2 Reflective mask blank for EUV lithography 有权
标题翻译： EUV光刻用反光罩
公开(公告)号：US08088538B2
公开(公告)日：2012-01-03
申请号：US12578648
申请日：2009-10-14
申请人： Kazyuki Hayashi , Kazuo Kadowaki , Masaki Mikami , Takashi Sugiyama
发明人： Kazyuki Hayashi , Kazuo Kadowaki , Masaki Mikami , Takashi Sugiyama
IPC分类号： G03F1/00 , B32B9/00
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/78
摘要： Provision of a reflective mask blank for EUV lithography having an absorber layer which has a low reflectance in the wavelength regions of EUV light and pattern inspection light and whose film composition and film thickness are easily controllable to desired ones.A reflective mask blank for EUV lithography, which comprises a substrate, and a reflective layer to reflect EUV light and an absorber layer to absorb EUV light, formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), boron (B) and silicon (Si), and in the absorber layer, the content of B is at least 1 at. % and less than 5 at. % and the content of Si is from 1 to 25 at. %, and wherein the absorber layer contains no nitrogen (N) or at most 10 at. % of N.
摘要翻译：提供用于EUV光刻的反射掩模板，其具有在EUV光和图案检查光的波长区域中具有低反射率的吸收层，并且其膜组成和膜厚度可以容易地控制到期望的。一种用于EUV光刻的反射掩模板，其包括基板，以及反射层，用于反射EUV光和吸收层，以吸收在基板上依次形成的EUV光，其中吸收层包含钽（Ta），硼（ B）和硅（Si），并且在吸收层中，B的含量至少为1个。％和小于5在。％，Si的含量为1〜25at。％，并且其中吸收层不含氮（N）或至多10原子。％的N.

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