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11. 发明申请

US20120160153A1 APPARATUS AND METHOD FOR PRODUCTION OF SiC SINGLE CRYSTAL 有权
标题翻译： SiC单晶生产设备及方法
公开(公告)号：US20120160153A1
公开(公告)日：2012-06-28
申请号：US13326638
申请日：2011-12-15
申请人： Tomokazu ISHII , Hidemitsu Sakamoto , Kazuhiko Kusunoki , Kazuhito Kamei
发明人： Tomokazu ISHII , Hidemitsu Sakamoto , Kazuhiko Kusunoki , Kazuhito Kamei
IPC分类号： C30B15/20
CPC分类号： C30B29/36 , C30B17/00 , Y10T117/1068 , Y10T117/1088
摘要： To suppress 3D or convex growth and ensure a high flatness, an apparatus for producing an SiC single crystal includes: a container which holds an SiC solution, a portion for maintaining the solution in the container at a suitable temperature, a shaft having a lower end part acting as a portion for holding an SiC seed crystal in planar contact with an overall back surface of a crystal growth face and acting as a portion for cooling the SiC seed crystal, and a portion of the holding shaft for enabling an SiC single crystal to continuously grow at the crystal growth face by maintaining the crystal growth face brought into contact with the solution, a lower end part of the shaft having a portion for obtaining a uniform in-plane temperature distribution of the crystal growth face brought into planar contact, and a method for the same.
摘要翻译：为了抑制3D或凸起生长并确保高平坦度，用于制造SiC单晶的装置包括：容纳SiC溶液的容器，用于将容器中的溶液保持在合适温度的部分，具有下端的轴作为用于保持SiC晶种与晶体生长面的整个后表面平面接触并用作冷却SiC晶种的部分的部分的部分，以及用于使SiC单晶能够通过保持晶体生长面与溶液接触而在晶体生长面上连续生长，轴的下端部具有用于获得平面接触的晶体生长面的均匀的面内温度分布的部分，以及一种方法。

12. 发明授权

US09080254B2 Method of producing SiC single crystal 有权
标题翻译： SiC单晶的制备方法
公开(公告)号：US09080254B2
公开(公告)日：2015-07-14
申请号：US13202096
申请日：2010-03-11
申请人： Hidemitsu Sakamoto , Hironori Daikoku , Yasuyuki Fujiwara
发明人： Hidemitsu Sakamoto , Hironori Daikoku , Yasuyuki Fujiwara
IPC分类号： C30B15/30 , C30B29/36 , C30B9/06 , C30B17/00 , C30B19/04 , C30B15/32 , C30B15/10 , C30B9/10
CPC分类号： C30B29/36 , C30B9/06 , C30B9/10 , C30B15/10 , C30B15/30 , C30B15/305 , C30B15/32 , C30B17/00 , C30B19/04
摘要： In a method of producing a SiC single crystal, the SiC single crystal is grown on a SiC seed crystal by bringing the SiC seed crystal, which is fixed at a rotatable seed crystal fixing shaft, into contact with a solution produced by dissolving carbon in melt containing silicon in a rotatable crucible. The method includes starting rotation of the seed crystal fixing shaft, and starting rotation of the crucible after a predetermined delay time (Td); then stopping the rotation of the seed crystal fixing shaft and the rotation of the crucible simultaneously; then stopping the seed crystal fixing shaft and the crucible for a predetermined stop time (Ts); and repeating a rotation/stop cycle.
摘要翻译：在制造SiC单晶的方法中，通过将固定在可旋转晶种固定轴上的SiC晶种与通过将碳溶解在熔融物中而制成的溶液接触而将SiC单晶生长在SiC晶种上在可旋转坩埚中含硅。该方法包括开始晶种固定轴的旋转，并在预定的延迟时间（Td）之后开始坩埚的旋转。然后同时停止晶种固定轴的旋转和坩埚的旋转; 然后停止晶种固定轴和坩埚预定的停止时间（Ts）; 并重复旋转/停止循环。

13. 发明申请

US20110315073A1 METHOD OF PRODUCING SIC SINGLE CRYSTAL 有权
标题翻译：生产SIC单晶的方法
公开(公告)号：US20110315073A1
公开(公告)日：2011-12-29
申请号：US13202096
申请日：2010-03-11
申请人： Hidemitsu Sakamoto , Hironori Daikoku , Yasuyuki Fujiwara
发明人： Hidemitsu Sakamoto , Hironori Daikoku , Yasuyuki Fujiwara
IPC分类号： C30B15/30
CPC分类号： C30B29/36 , C30B9/06 , C30B9/10 , C30B15/10 , C30B15/30 , C30B15/305 , C30B15/32 , C30B17/00 , C30B19/04
摘要： In a method of producing an SiC single crystal, the SiC single crystal is grown on an SiC seed crystal by bringing the SiC seed crystal, which is fixed at a rotatable seed crystal fixing shaft, into contact with a solution produced by dissolving carbon in melt containing silicon in a rotatable crucible. The method includes starting rotation of the seed crystal fixing shaft, and starting rotation of the crucible after a predetermined delay time (Td); then stopping the rotation of the seed crystal fixing shaft and the rotation of the crucible simultaneously; then stopping the seed crystal fixing shaft and the crucible for a predetermined stop time (Ts); and repeating a rotation/stop cycle.
摘要翻译：在制造SiC单晶的方法中，通过将固定在可旋转晶种固定轴上的SiC晶种与通过将碳溶解在熔体中而制备的溶液接触而将SiC单晶生长在SiC晶种上在可旋转坩埚中含硅。该方法包括开始晶种固定轴的旋转，并在预定的延迟时间（Td）之后开始坩埚的旋转。然后同时停止晶种固定轴的旋转和坩埚的旋转; 然后停止晶种固定轴和坩埚预定的停止时间（Ts）; 并重复旋转/停止循环。

14. 发明申请

US20090084309A1 METHOD OF PRODUCTION OF SiC SINGLE CRYSTAL 审中-公开
标题翻译： SiC单晶的生产方法
公开(公告)号：US20090084309A1
公开(公告)日：2009-04-02
申请号：US12160218
申请日：2007-01-18
申请人： Hidemitsu Sakamoto
发明人： Hidemitsu Sakamoto
IPC分类号： C30B17/00
CPC分类号： C30B29/36 , C30B19/04
摘要： A method of production of SiC single crystal using the solution method able to stably maintain flatness of a growth surface, prevent polycrystallization, and grow a large sized SiC single crystal is provided. A method of growing a hexagonal SiC single crystal starting from a hexagonal SiC seed crystal held directly under a melt surface of an Si melt in a graphite crucible by maintaining in the Si melt a temperature gradient such that the temperature falls from the inside toward the melt surface of the Si melt, characterized by:growing said SiC single crystal on a surface of said SiC seed crystal, which surface is inclined at a selected off angle from a (0001) plane of the SiC seed crystal in a [1-100] direction of the SiC seed crystal. The off angle is preferably 1 to 30°, while growing the SiC single crystal on the (1-100) surface where the off angle is 90° is most preferable.
摘要翻译：提供了使用能够稳定地保持生长面的平坦性，防止多晶化并生长大型SiC单晶的溶液法的SiC单晶的制造方法。从石英坩埚中的Si熔体的熔融表面直接保持在六方晶SiC晶种开始生长六方晶系SiC单晶的方法，通过在Si熔体中保持温度梯度使得温度从内部向熔融物 Si熔体的表面，其特征在于：在所述SiC晶种的表面上生长所述SiC单晶，所述SiC晶种在[1-100]中从SiC晶种的（0001）面以选定的偏角倾斜， SiC晶种的方向。脱离角优选为1〜30°，而在偏离角为90°的（1-100）表面上生长SiC单晶是最优选的。

15. 发明申请

US20120103251A1 SEED CRYSTAL AXIS FOR SOLUTION GROWTH OF SINGLE CRYSTAL 有权
标题翻译：用于单晶生长的SEED晶体轴
公开(公告)号：US20120103251A1
公开(公告)日：2012-05-03
申请号：US12673011
申请日：2009-07-21
申请人： Hidemitsu Sakamoto , Yasuyuki Fujiwara
发明人： Hidemitsu Sakamoto , Yasuyuki Fujiwara
IPC分类号： C30B15/32 , B32B9/00
CPC分类号： C30B9/00 , C30B17/00 , C30B29/36 , Y10T117/10 , Y10T117/1016 , Y10T117/1024 , Y10T117/1032 , Y10T117/1068 , Y10T428/2918
摘要： PROBLEM To provide a seed crystal axis for solution growth of single crystal able to prevent or suppress formation of polycrystals due to the liquid phase technique and grow a single crystal with a high growth rate.MEANS A seed crystal axis used in a solution growth of single crystal production system, said seed crystal axis for solution growth of single crystal comprising a seed crystal bonded to a seed crystal support member between which is interposed a laminated carbon sheet having a high thermal conductivity in a direction perpendicular to a solution surface of a solvent and comprising a plurality of carbon thin films laminated with an adhesive, a laminated carbon sheet comprising a plurality of pieces with differing lamination directions arranged in a lattice, a wound carbon sheet comprising a carbon strip wound concentrically from the center, or a wound carbon sheet comprising a plurality of carbon strips with differing thicknesses which are wound and laminated from the center so that the closer to the outer periphery, the thicker.
摘要翻译：问题提供能够防止或抑制由于液相技术形成多晶体的单晶溶液生长的种晶轴，并生长具有高生长速率的单晶。意味着用于单晶生产系统的溶液生长的晶种轴，所述籽晶液晶轴用于溶液生长的单晶，其包含结合到晶种支撑构件的晶种，其中插入具有高热导率的层压碳片在垂直于溶剂的溶液表面的方向上并且包括多个层叠有粘合剂的碳薄膜，包括具有以格子排列的不同层压方向的多个片的层压碳片，包含碳带的卷绕碳片从中心同心地卷绕，或者包括从中心卷绕并层压的具有不同厚度的多个碳带的卷绕碳片，使得越靠近外周越厚。

16. 发明申请

US20090178610A1 METHOD OF MANUFACTURING A SILICON CARBIDE SINGLE CRYSTAL 有权
标题翻译：制造单晶碳化硅单晶的方法
公开(公告)号：US20090178610A1
公开(公告)日：2009-07-16
申请号：US12296145
申请日：2007-04-05
申请人： Hidemitsu Sakamoto , Yukio Terashima
发明人： Hidemitsu Sakamoto , Yukio Terashima
IPC分类号： C30B15/02
CPC分类号： C30B29/36 , C30B17/00 , C30B19/04
摘要： Silicon raw material is filled into a graphite crucible (10), the graphite crucible (10) is heated to form molten silicon (M), at least one rare earth element and at least one of Sn, Al, and Ge are added to molten silicon (M), and a temperature gradient is maintained in the molten silicon in which the temperature decreases from within the molten silicon toward the surface while growing an silicon carbide single crystal starting from an silicon carbide seed crystal (14) held immediately below the surface of the molten liquid.
摘要翻译：将硅原料填充到石墨坩埚（10）中，将石墨坩埚（10）加热形成熔融硅（M），将至少一种稀土元素和Sn，Al和Ge中的至少一种加入熔融硅（M），并且在熔融硅中保持温度梯度，其中温度从熔融硅内朝向表面降温，同时从立即在表面下方保持的碳化硅晶种（14）开始生长碳化硅单晶的熔融液体。

17. 发明授权

US08052793B2 Method for producing silicon carbide single crystal 有权
标题翻译：碳化硅单晶的制造方法
公开(公告)号：US08052793B2
公开(公告)日：2011-11-08
申请号：US11921463
申请日：2006-06-16
申请人： Hidemitsu Sakamoto
发明人： Hidemitsu Sakamoto
IPC分类号： C30B15/20
CPC分类号： C30B29/36 , C30B17/00 , C30B19/00 , C30B19/04
摘要： A method for producing a silicon carbide single crystal, which comprises bringing a silicon carbide single crystal substrate into contact with a melt prepared by melting a raw material containing Si and C, and growing a silicon carbide single crystal on the substrate, the method including performing a cycle comprising the following steps (a) and (b): a) a step of bringing the seed crystal substrate into contact with the surface of the melt, growing a single crystal, and separating the seed crystal substrate from the surface of the melt thereby interrupting the growth of the single crystal, and b) a step of bringing the seed crystal substrate into contact with the surface of the melt and growing a single crystal, at least one time, wherein the seed crystal is a 6H-silicon carbide single crystal or a 15R-silicon carbide single crystal and the resulting single crystal is a 4H-silicon carbide single crystal.
摘要翻译：一种碳化硅单晶的制造方法，其特征在于，包括使碳化硅单晶基板与通过熔融含有Si和C的原料熔融而制备的熔体接触，并在所述基板上生长碳化硅单晶，所述方法包括进行包括以下步骤（a）和（b）的循环：a）使晶种衬底与熔体的表面接触，生长单晶并从晶体表面分离晶种衬底的步骤从而中断单晶的生长，以及b）使籽晶衬底与熔融物的表面接触并生长单晶的步骤至少一次，其中晶种是6H-碳化硅单体晶体或15R-碳化硅单晶，所得单晶为4H-碳化硅单晶。

18. 发明申请

US20090101062A1 Method for Producing Silicon Carbide Single Crystal 有权
标题翻译：生产碳化硅单晶的方法
公开(公告)号：US20090101062A1
公开(公告)日：2009-04-23
申请号：US11921463
申请日：2006-06-16
申请人： Hidemitsu Sakamoto
发明人： Hidemitsu Sakamoto
IPC分类号： C30B19/10
CPC分类号： C30B29/36 , C30B17/00 , C30B19/00 , C30B19/04
摘要： A method for producing a silicon carbide single crystal, which comprises bringing a silicon carbide single crystal substrate into contact with a melt prepared by melting a raw material containing Si and C, and growing a silicon carbide single crystal on the substrate, the method including performing a cycle comprising the following steps (a) and (b): a) a step of bringing the seed crystal substrate into contact with the surface of the melt, growing a single crystal, and separating the seed crystal substrate from the surface of the melt thereby interrupting the growth of the single crystal, and b) a step of bringing the seed crystal substrate into contact with the surface of the melt and growing a single crystal, at least one time, wherein the seed crystal is a 6H-silicon carbide single crystal or a 15R-silicon carbide single crystal and the resulting single crystal is a 4H-silicon carbide single crystal.
摘要翻译：一种碳化硅单晶的制造方法，其特征在于，包括使碳化硅单晶基板与通过熔融含有Si和C的原料熔融而制备的熔体接触，并在所述基板上生长碳化硅单晶，所述方法包括进行包括以下步骤（a）和（b）的循环：a）使晶种衬底与熔体的表面接触，生长单晶并从晶体表面分离晶种衬底的步骤从而中断单晶的生长，以及b）使籽晶衬底与熔融物的表面接触并生长单晶的步骤至少一次，其中晶种是6H-碳化硅单体晶体或15R-碳化硅单晶，所得单晶为4H-碳化硅单晶。

19. 发明授权

US08328937B2 Seed crystal axis for solution growth of single crystal 有权
标题翻译：晶晶轴用于单晶溶液生长
公开(公告)号：US08328937B2
公开(公告)日：2012-12-11
申请号：US12673011
申请日：2009-07-21
申请人： Hidemitsu Sakamoto , Yasuyuki Fujiwara
发明人： Hidemitsu Sakamoto , Yasuyuki Fujiwara
IPC分类号： C30B11/14
CPC分类号： C30B9/00 , C30B17/00 , C30B29/36 , Y10T117/10 , Y10T117/1016 , Y10T117/1024 , Y10T117/1032 , Y10T117/1068 , Y10T428/2918
摘要： A seed crystal axis used in a solution growth of single crystal production system is provided to prevent formation of polycrystals and grow a single crystal with a high growth rate. The seed crystal axis includes a seed crystal bonded to a seed crystal support member between which is interposed a laminated carbon sheet having a high thermal conductivity in a direction perpendicular to a solution surface of a solvent. The laminated carbon sheet includes a plurality of carbon thin films laminated with an adhesive or a plurality of pieces with differing lamination directions arranged in a lattice. Alternatively, a wound carbon sheet including a carbon strip wound concentrically from the center or a wound carbon sheet including a plurality of carbon strips with differing thicknesses which are wound and laminated from the center may be provided.
摘要翻译：提供用于单晶生产系统的溶液生长的晶种轴以防止多晶体的形成并以高生长速率生长单晶。种子晶轴包括结合到晶种支撑构件的晶种，其中在与溶剂的溶液表面垂直的方向上插入具有高热导率的层压碳片。层叠碳片包括层叠有粘合剂的多个碳薄膜或者具有以格子排列的不同层叠方向的多个片。或者，可以提供包括从中心同心卷绕的碳带的卷绕碳片或包括从中心卷绕并层压的多个厚度不同的碳带的卷绕碳片。

20. 发明授权

US08118933B2 Method of manufacturing a silicon carbide single crystal 有权
标题翻译：制造碳化硅单晶的方法
公开(公告)号：US08118933B2
公开(公告)日：2012-02-21
申请号：US12296145
申请日：2007-04-05
申请人： Hidemitsu Sakamoto , Yukio Terashima
发明人： Hidemitsu Sakamoto , Yukio Terashima
IPC分类号： C03B15/02
CPC分类号： C30B29/36 , C30B17/00 , C30B19/04
摘要： Silicon raw material is filled into a graphite crucible (10), the graphite crucible (10) is heated to form molten silicon (M), at least one rare earth element and at least one of Sn, Al, and Ge are added to molten silicon (M), and a temperature gradient is maintained in the molten silicon in which the temperature decreases from within the molten silicon toward the surface while growing an silicon carbide single crystal starting from an silicon carbide seed crystal (14) held immediately below the surface of the molten liquid.
摘要翻译：将硅原料填充到石墨坩埚（10）中，将石墨坩埚（10）加热形成熔融硅（M），将至少一种稀土元素和Sn，Al和Ge中的至少一种加入熔融硅（M），并且在熔融硅中保持温度梯度，其中温度从熔融硅内朝向表面降温，同时从立即在表面下方保持的碳化硅晶种（14）开始生长碳化硅单晶的熔融液体。

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