专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US06204194B1 Method and apparatus for producing a semiconductor device 失效
标题翻译：用于制造半导体器件的方法和装置
公开(公告)号：US06204194B1
公开(公告)日：2001-03-20
申请号：US09231821
申请日：1999-01-15
申请人： Mikio Takagi
发明人： Mikio Takagi
IPC分类号： H01L2131
CPC分类号： C23C16/45504 , C23C16/4412 , C23C16/455 , C23C16/45521 , C23C16/45578 , C23C16/45591 , C23C16/4584 , H01L21/02164 , H01L21/02271 , H01L21/31612
摘要： The film growth speed of a conventional vertical heating method, such as SiO2 film, polycrystalline Si film or the like of a semiconductor device, is enhanced by means of discharging and sucking the reaction gas onto and from the Si wafers placed horizontally in the vertical furnace. The wafers are rotated and the wafer-distance is set at 5 mm or more.
摘要翻译：通过将反应气体排放到水平放置在立式炉中的Si晶片上并从其中吸出反应气体来提高常规垂直加热方法的膜生长速度，例如半导体器件的SiO 2膜，多晶Si膜等。晶片旋转，晶片间距设定在5mm以上。

12. 发明授权

US5445676A Method and apparatus for manufacturing semiconductor devices 失效
标题翻译：用于制造半导体器件的方法和装置
公开(公告)号：US5445676A
公开(公告)日：1995-08-29
申请号：US321745
申请日：1994-10-12
申请人： Mikio Takagi
发明人： Mikio Takagi
IPC分类号： C23C16/46 , C23C16/54 , C30B31/12 , F27B17/00 , F27D3/00 , H01L21/00 , C23C16/00
CPC分类号： H01L21/67115 , C23C16/46 , C23C16/54 , C30B31/12 , F27B17/0025 , F27D2003/0075 , Y10T29/41
摘要： A wafer(s) for producing semiconductor devices is subjected to heat treatment in a vertical thermal reactor, which is provided with an electric heating means setting a first temperature and another electric heating means setting a second temperature higher than the first temperature. The wafer(s) is moved upwards and is subjected to a treatment in the second region of the vertical thermal reactor; and, is reverted to the first region. Rapid thermal processing of 6 or 8 inch wafer(s) is possible without causing slip lines.
摘要翻译：用于制造半导体器件的晶片在垂直热反应器中进行热处理，所述立式热反应器设置有设定第一温度的电加热装置和设置高于第一温度的第二温度的另一电加热装置。将晶片向上移动并在垂直热反应器的第二区域中进行处理; 并被恢复到第一个地区。 6或8英寸晶圆的快速热处理是可能的，而不会导致滑移线。

13. 发明授权

US4532022A Process of producing a semiconductor device 失效
标题翻译：制造半导体器件的工艺
公开(公告)号：US4532022A
公开(公告)日：1985-07-30
申请号：US499477
申请日：1983-05-31
申请人： Kanetake Takasaki , Mikio Takagi , Kenji Koyama
发明人： Kanetake Takasaki , Mikio Takagi , Kenji Koyama
IPC分类号： H01L21/318 , C23C16/30 , G11C16/02 , G11C17/00 , H01L21/314 , H01L21/56 , H01L21/8247 , H01L23/29 , H01L23/31 , H01L29/51 , H01L29/788 , H01L29/792 , C23C15/00
CPC分类号： H01L29/518 , C23C16/308 , H01L21/3144 , H01L21/3145 , H01L21/56 , H01L23/291 , H01L23/3171 , H01L29/7881 , H01L2924/0002 , Y10S148/043 , Y10S148/081 , Y10S148/114 , Y10S438/958 , Y10S438/972
摘要： A silicon nitride film containing from 20 to 70% oxygen, for use as a surface passivation film, has enhanced ultraviolet ray transmissivity while exhibiting the desirable moisture proofness quality of a silicon nitride film.
摘要翻译：含有20〜70％氧的用作表面钝化膜的氮化硅膜具有增强的紫外线透射率，同时表现出氮化硅膜所需的防潮性。

14. 发明授权

US4263087A Process for producing epitaxial layers 失效
标题翻译：生产外延层的方法
公开(公告)号：US4263087A
公开(公告)日：1981-04-21
申请号：US120094
申请日：1980-02-11
申请人： Kaoru Tanabe , Yoshifumi Nomura , Mamoru Maeda , Mikio Takagi
发明人： Kaoru Tanabe , Yoshifumi Nomura , Mamoru Maeda , Mikio Takagi
IPC分类号： C30B25/02 , C30B25/10 , C30B25/12 , H01L21/205 , H01L21/31 , C23C13/00
CPC分类号： C30B29/06 , C30B25/10 , C30B25/12 , H01L21/02381 , H01L21/02532 , H01L21/0262
摘要： Epitaxial layers are formed by introducing a reaction gas mixture into a reaction vessel in which semiconductor substrates are located, under a pressure of not higher than 1333 Pa (10 Torr), and heating said semiconductor substrates by high frequency induction power so that layers grow epitaxially on said semiconductor substrates. The frequency f of high frequency power is not higher than 50 kHz, and the pressure P in said reaction vessel is maintained in the following range ##STR1## wherein, P is the pressure in units of Pa or Torr in the reaction vessel and f is the frequency in kHz of said high frequency power.
摘要翻译：通过在不高于1333Pa（10Torr）的压力下将反应气体混合物引入到其中位于半导体衬底的反应容器中并通过高频感应功率加热所述半导体衬底以使得层外延生长来形成外延层在所述半导体衬底上。高频功率的频率f不高于50kHz，并且所述反应容器中的压力P保持在以下范围内：其中P是反应容器中的Pa或Torr单位的压力 f是所述高频功率的kHz的频率。

15. 发明授权

US08178837B2 Logical CAD navigation for device characteristics evaluation system 有权
标题翻译：设备特征评估系统的逻辑CAD导航
公开(公告)号：US08178837B2
公开(公告)日：2012-05-15
申请号：US12728562
申请日：2010-03-22
申请人： Tohru Ando , Tsutomu Saito , Yasuhiko Nara , Mikio Takagi , Koichi Takauchi
发明人： Tohru Ando , Tsutomu Saito , Yasuhiko Nara , Mikio Takagi , Koichi Takauchi
IPC分类号： G01N23/00 , G21K7/00
CPC分类号： G06T7/001 , G06T2200/24 , G06T2207/30148 , H01J37/222 , H01J37/28 , H01J2237/2817 , Y10S715/964
摘要： A navigation system for easily determining defective positions is provided. In the case of CAD navigation to defective positions, logical information for indicating defective positions is created in a CAD format, instead of CAD data of physical information indicating circuit design. Specifically, by attaching marks such as rectangles, characters, or lines, to an electron microscope image with software, quick navigation is performed with required minimum information. By using created CAD data, re-navigation with the same equipment and CAD navigation to heterogeneous equipment are performed.
摘要翻译：提供了用于容易地确定缺陷位置的导航系统。在CAD导航到缺陷位置的情况下，代替用于指示电路设计的物理信息的CAD数据，以CAD格式创建用于指示缺陷位置的逻辑信息。具体地，通过用软件将诸如矩形，字符或线的标记附加到电子显微镜图像上，使用所需的最小信息进行快速导航。通过使用创建的CAD数据，执行使用相同设备和CAD导航到异构设备的重新导航。

16. 发明申请

US20070124713A1 Logical CAD navigation for device characteristics evaluation system 有权
标题翻译：设备特征评估系统的逻辑CAD导航
公开(公告)号：US20070124713A1
公开(公告)日：2007-05-31
申请号：US11583983
申请日：2006-10-20
申请人： Tohru Ando , Tsutomu Saito , Yasuhiko Nara , Mikio Takagi , Koichi Takauchi
发明人： Tohru Ando , Tsutomu Saito , Yasuhiko Nara , Mikio Takagi , Koichi Takauchi
IPC分类号： G06F17/50
CPC分类号： G06T7/001 , G06T2200/24 , G06T2207/30148 , H01J37/222 , H01J37/28 , H01J2237/2817 , Y10S715/964
摘要： A navigation system for easily determining defective positions is provided. In the case of CAD navigation to defective positions, logical information for indicating defective positions is created in a CAD format, instead of CAD data of physical information indicating circuit design. Specifically, by attaching marks such as rectangles, characters, or lines, to an electron microscope image with software, quick navigation is performed with required minimum information. By using created CAD data, re-navigation with the same equipment and CAD navigation to heterogeneous equipment are performed.
摘要翻译：提供了用于容易地确定缺陷位置的导航系统。在CAD导航到缺陷位置的情况下，代替用于指示电路设计的物理信息的CAD数据，以CAD格式创建用于指示缺陷位置的逻辑信息。具体地，通过用软件将诸如矩形，字符或线的标记附加到电子显微镜图像上，使用所需的最小信息进行快速导航。通过使用创建的CAD数据，执行使用相同设备和CAD导航到异构设备的重新导航。

17. 发明授权

US5972116A Method and apparatus for producing a semiconductor device 失效
标题翻译：用于制造半导体器件的方法和装置
公开(公告)号：US5972116A
公开(公告)日：1999-10-26
申请号：US579851
申请日：1995-12-28
申请人： Mikio Takagi
发明人： Mikio Takagi
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , H01L21/00 , H01L21/205 , H01L21/22 , H01L21/304 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/4401 , C23C16/4412 , C23C16/455 , C23C16/45591 , C23C16/4584 , H01L21/67017 , H01L21/67109 , H01L21/67115
摘要： In a method for producing a semiconductor device using a dual tube reactor, inert gas is fed into the vertical reaction-tube, a reaction gas is introduced into the vertical reaction-tube, the inert gas is exhausted through the annular channel formed between the inner tube and the outer tube at a bottom portion of the vertical reaction-tube; and, a wafer is heat treated in the vertical reaction-tube by means of a heating furnace. In order to decrease the number and size of the particles, the wafer is displaced upward and then positioned at a level substantially the same as or above the top end of the inner tube, and the reaction gas is introduced into the vertical reaction-tube at or above the position of the wafer. Furthermore, the inert gas is caused to flow from a bottom portion of the inner tube toward the wafer positioned as above. As a result, inflow of the reaction gas into the inner tube is impeded, and the generation of particles there can be lessened.
摘要翻译：在使用双管反应器的半导体器件的制造方法中，将惰性气体供给到垂直反应管中，将反应气体引入到垂直反应管中，惰性气体通过内部形成的环状通路排出管和外管在垂直反应管的底部; 并且通过加热炉在垂直反应管中对晶片进行热处理。为了减小颗粒的数量和尺寸，晶片向上移位，然后定位在与内管的顶端基本相同或高于内管的水平面上，并将反应气体引入垂直反应管中或高于晶片的位置。此外，使惰性气体从内管的底部朝向如上定位的晶片流动。结果，阻止反应气体进入内管，并且可以减少颗粒的产生。

18. 发明授权

US5699656A Agricultural combine 失效
标题翻译：农业结合
公开(公告)号：US5699656A
公开(公告)日：1997-12-23
申请号：US722579
申请日：1996-10-01
申请人： Kenji Hamada , Toshinori Kirihata , Keita Kamikubo , Mikio Takagi , Masami Nakamura , Youzaburo Narahara , Koichi Kawasaki
发明人： Kenji Hamada , Toshinori Kirihata , Keita Kamikubo , Mikio Takagi , Masami Nakamura , Youzaburo Narahara , Koichi Kawasaki
IPC分类号： B62D11/18 , F16H7/08 , A01D41/00 , A01F12/00
CPC分类号： F16H7/0827 , B62D11/183 , Y10S180/90
摘要： A tracked agricultural combine vehicle for harvesting, hulling and sorting grain includes a grain working section driven via a tension roller clutch controlled power transmission belt and further including integrated control means for left and right side propulsion track assemblies wherein individual track steering commands in the form of differential track speed control are derived from a common steering wheel input; vehicle speed is controlled by a single input means which controls the speed of both tracks.
摘要翻译：一种用于收割，整理和分粒的跟踪农用车辆包括通过张紧辊离合器控制的动力传动带驱动的谷物工作部分，并且还包括用于左右侧推进履带组件的综合控制装置，其中以差速器轨迹速度控制是从一个常用的方向盘输入中得出的; 车速由控制两个轨道的速度的单个输入装置控制。

19. 发明授权

US4581622A UV erasable EPROM with UV transparent silicon oxynitride coating 失效
标题翻译： UV可擦除EPROM与UV透明氧氮化硅涂层
公开(公告)号：US4581622A
公开(公告)日：1986-04-08
申请号：US578992
申请日：1984-02-13
申请人： Kanetake Takasaki , Mikio Takagi , Kenji Koyama
发明人： Kanetake Takasaki , Mikio Takagi , Kenji Koyama
IPC分类号： H01L21/318 , C23C16/30 , G11C16/02 , G11C17/00 , H01L21/314 , H01L21/56 , H01L21/8247 , H01L23/29 , H01L23/31 , H01L29/51 , H01L29/788 , H01L29/792 , G11C11/40 , H01L27/10 , H01L27/14 , H01L21/94
CPC分类号： H01L29/518 , C23C16/308 , H01L21/3144 , H01L21/3145 , H01L21/56 , H01L23/291 , H01L23/3171 , H01L29/7881 , H01L2924/0002 , Y10S148/043 , Y10S148/081 , Y10S148/114 , Y10S438/958 , Y10S438/972
摘要： A silicon nitride film containing from 20 to 70% oxygen, for use as a surface passivation film, has enhanced ultraviolet ray transmissivity while exhibiting the desirable moisture proofness quality of a silicon nitride film.

20. 发明授权

US4394401A Method of plasma enhanced chemical vapor deposition of phosphosilicate glass film 失效
标题翻译：磷硅玻璃薄膜等离子体增强化学气相沉积方法
公开(公告)号：US4394401A
公开(公告)日：1983-07-19
申请号：US290978
申请日：1981-08-07
申请人： Yoshimi Shioya , Mamoru Maeda , Kanetake Takasaki , Mikio Takagi
发明人： Yoshimi Shioya , Mamoru Maeda , Kanetake Takasaki , Mikio Takagi
IPC分类号： C01B33/113 , C03C17/02 , C03C17/245 , C23C16/30 , C23C16/40 , C23C16/50 , C23C16/509 , C30B25/02 , C30B29/18 , H01L21/316
CPC分类号： H01L21/02129 , C23C16/401 , C23C16/5096 , H01L21/02126 , H01L21/02164 , H01L21/02274 , H01L21/31625
摘要： A method of plasma enhanced chemical vapor deposition of a phosphosilicate glass film on a substrate from a reaction gas mixture including SiH.sub.4, N.sub.2 O and PH.sub.3 is disclosed. This deposition is effected under the conditions such that a mol ratio of N.sub.2 O to SiH.sub.4 (N.sub.2 O/SiH.sub.4) in the reaction gas mixture is 50 or more and that a mol ratio of PH.sub.3 to SiH.sub.4 (PH.sub.3 /SiH.sub.4) in the reaction gas mixture is 0.08 or less. In the phosphosilicate glass film thus deposited, no cracking occurs due to a high temperature heat-treatment and due to the stress, caused by cooling the deposited films to an ordinarily ambient temperature.
摘要翻译：公开了一种从包括SiH 4，N 2 O和PH 3的反应气体混合物在基底上等离子体增强化学气相沉积磷硅酸盐玻璃膜的方法。这种沉积是在反应气体混合物中N2O与SiH4（N2O / SiH4）的摩尔比为50以上，反应气体混合物中PH3〜SiH4（PH3 / SiH4）的摩尔比为 0.08以下。在这样沉积的磷硅玻璃膜中，不会由于高温热处理而引起裂纹，并且由于通过将沉积膜冷却到常规环境温度而引起的应力。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式