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11. 发明授权

US06531068B2 Method of anisotropic etching of silicon 有权
标题翻译：硅各向异性蚀刻方法
公开(公告)号：US06531068B2
公开(公告)日：2003-03-11
申请号：US09328019
申请日：1999-06-08
申请人： Franz Laermer , Andrea Schilp
发明人： Franz Laermer , Andrea Schilp
IPC分类号： H01L21308
CPC分类号： H01L21/3065
摘要： A method of anisotropic etching of silicon with structures, preferably defined with an etching mask, by using a plasma, with a polymer being applied during a polymerization step to the lateral border of the structures defined by the etching mask, then being partially removed again during the following etching step and being redeposited in deeper side walls of the structure newly formed due to the etching reaction, and the etching is performed with an etching gas containing 3 to 40 vol % oxygen. In this way it is possible to prevent sulfur contamination in the exhaust gas area in high rate etching of silicon.
摘要翻译：通过使用等离子体，优选用蚀刻掩模限定的硅，在聚合步骤期间将聚合物施加到由蚀刻掩模限定的结构的侧边缘上的各向异性蚀刻硅的方法，然后再次在以下蚀刻步骤，并且由于蚀刻反应而重新沉积在新形成的结构的更深的侧壁中，并且用含有3至40体积％氧气的蚀刻气体进行蚀刻。以这种方式，可以在硅的高速蚀刻中防止废气区域中的硫污染。

12. 发明授权

US06303512B1 Anisotropic, fluorine-based plasma etching method for silicon 有权
标题翻译：硅各向异性，氟基等离子体蚀刻方法
公开(公告)号：US06303512B1
公开(公告)日：2001-10-16
申请号：US09171516
申请日：1999-04-29
申请人： Franz Laermer , Andrea Schilp
发明人： Franz Laermer , Andrea Schilp
IPC分类号： H01L213065
CPC分类号： H01L21/30655 , H01L21/3065
摘要： A method for anisotropic plasma etching of laterally defined patterns in a silicon substrate is described. Protective layers made of at least one silicon compound with a second reaction partner that is entirely compatible with the chemistry of the etching process are deposited before and/or during plasma etching onto the sidewalls of the laterally defined patterns.
摘要翻译：描述了硅衬底中侧向限定图案的各向异性等离子体蚀刻的方法。由与至少一种硅化合物制成的保护层与第二反应对象制成，其与蚀刻工艺的化学完全相容，在等离子体蚀刻之前和/或等离子体蚀刻之间沉积到横向限定图案的侧壁上。

13. 发明授权

US06200822B1 Method for detecting the transition between different materials in semiconductor structures 失效
标题翻译：用于检测半导体结构中不同材料之间的转变的方法
公开(公告)号：US06200822B1
公开(公告)日：2001-03-13
申请号：US09269007
申请日：1999-06-17
申请人： Volker Becker , Franz Laermer , Andrea Schilp
发明人： Volker Becker , Franz Laermer , Andrea Schilp
IPC分类号： H01L2100
CPC分类号： H01J37/32963 , H01J37/32935 , H01L21/30655 , H01L22/26
摘要： A method for detecting the transition between different materials in semiconductor structures during alternating etching and covering steps for anisotropic depthwise etching of defined patterns performed using a plasma. Provision is made for ascertaining, by way of an intensity measurement of at least one specific substance contained in the plasma, the beginning of each etching step by the fact that a characteristic threshold is reached, this also being achievable by way of an external synchronization signal which indicates the beginning and end of each etching step; for then, when the threshold value is reached, starting a delay time which is longer than the course of a first concentration maximum; for a second concentration maximum then to be ascertained after the delay time has elapsed; and for the second concentration maxima of the etching steps to be monitored as to whether they exceed or fall below the predefined value, in order to detect a material transition.
摘要翻译：一种用于在交替蚀刻期间检测半导体结构中的不同材料之间的转变的方法以及使用等离子体进行的限定图案的各向异性深度蚀刻的覆盖步骤。提供了通过对等离子体中包含的至少一种特定物质的强度测量来确定通过达到特征阈值的事实开始每个蚀刻步骤，这也可以通过外部同步信号来实现其表示每个蚀刻步骤的开始和结束; 然后，当达到阈值时，启动比第一浓度最大值的过程更长的延迟时间; 对于第二浓度最大值，然后在延迟时间过去之后确定; 并且为了监测蚀刻步骤的第二浓度最大值是否超过或低于预定值，为了检测材料转变。

14. 发明授权

US07094706B2 Device and method for etching a substrate by using an inductively coupled plasma 有权
公开(公告)号：US07094706B2
公开(公告)日：2006-08-22
申请号：US10763010
申请日：2004-01-21
申请人： Klaus Breitschwerdt , Volker Becker , Franz Laermer , Andrea Schilp
发明人： Klaus Breitschwerdt , Volker Becker , Franz Laermer , Andrea Schilp
IPC分类号： H01L21/302
CPC分类号： H01J37/321 , H01J37/3266 , H01L21/3065
摘要： A device and a method for etching a substrate, in particular a silicon body, by using an inductively coupled plasma. A high-frequency electromagnetic alternating field is generated using an ICP source, and an inductively coupled plasma composed of reactive particles is generated by the action of a high-frequency electromagnetic alternating field on a reactive gas in a reactor. In addition, a static or time-variable magnetic field is generated between the substrate and the ICP source, for which purpose at least two magnetic field coils arranged one above the other are provided. The direction of the resulting magnetic field is also approximately parallel to the direction defined by the tie line connecting the substrate and the inductively coupled plasma. Finally, a first component magnetic field is generated with a first magnetic field coil, and a second component magnetic field which is equally strong at an equivalent site is generated with a second magnetic field coil, the two component magnetic fields being oriented in opposite directions.

15. 发明授权

US06911348B1 Device and method for determining the lateral undercut of a structured surface layer 失效
标题翻译：用于确定结构化表面层的横向底切的装置和方法
公开(公告)号：US06911348B1
公开(公告)日：2005-06-28
申请号：US09674984
申请日：2000-03-13
申请人： Volker Becker , Franz Laermer , Andrea Schilp
发明人： Volker Becker , Franz Laermer , Andrea Schilp
IPC分类号： B81C99/00 , H01L21/02 , H01L21/66 , H01L21/00
CPC分类号： H01L28/10 , B81C99/004 , H01L22/12
摘要： A device and a method for determining the extent of an at least locally lateral undercut of a structured surface layer on a sacrificial layer. The structured surface layer for this purpose locally has at least one passive electronic component, using which a physical measured quantity can be determined, which is proportional to the extent of the lateral undercut. The method for generating this device proposes, initially on the structured surface layer in a first etching method, to provide the surface layer at least locally with a structuring having trenches and, in a second etching method, proceeding from the trenches, to undertake at least locally a lateral undercut of the structured surface layer. In this context, in the first etching method on the surface layer, locally at least one passive electronic component is additionally delineated out, which in response to a subsequent undercutting of the surface layer is also undercut. The physical measured quantity is determined without contact, preferably by sending an electromagnetic emission into the passive component.
摘要翻译：用于确定牺牲层上的结构化表面层的至少局部侧向底切的程度的装置和方法。用于此目的的结构化表面层在本地具有至少一个无源电子部件，利用该被动电子部件可以确定与外侧底切的程度成比例的物理测量量。用于产生该装置的方法首先在第一蚀刻方法中在结构化表面层上提出至少局部地提供具有沟槽的结构的表面层，并且以第二蚀刻方法从沟槽进行至少承受局部地是结构化表面层的横向底切。在本文中，在表面层上的第一蚀刻方法中，局部地附加地描绘了至少一个无源电子部件，其响应于表面层的随后的底切也被切削。物理测量的数量是在不接触的情况下确定的，优选地通过向无源部件发送电磁辐射。

16. 发明授权

US06558559B1 Method of manufacturing micromechanical surface structures by vapor-phase etching 失效
标题翻译：通过气相蚀刻制造微机械表面结构的方法
公开(公告)号：US06558559B1
公开(公告)日：2003-05-06
申请号：US09019011
申请日：1998-02-05
申请人： Volker Becker , Franz Laermer , Michael Offenberg , Andrea Schilp
发明人： Volker Becker , Franz Laermer , Michael Offenberg , Andrea Schilp
IPC分类号： C23F100
CPC分类号： B81C1/00
摘要： A method of sacrificial layer etching of micromechanical surface structures, in which a sacrificial layer is deposited on a heatable silicon substrate and is structured. A temperature difference between the substrate and the vapor phase of an etching medium is established in such a way that exposed metal contacts made of aluminum alloys are not attacked at the same time and are not subsequently exposed to any risk of corrosion.
摘要翻译：一种牺牲层蚀刻微机械表面结构的方法，其中牺牲层沉积在可加热的硅衬底上并被构造。蚀刻介质的衬底和气相之间的温度差异以这样的方式建立，使得由铝合金制成的暴露的金属触点不会同时受到冲击，并且不会随后暴露于任何腐蚀的风险。

17. 发明授权

US6008138A Process for making micromechanical structures 失效
标题翻译：制造微机械结构的方法
公开(公告)号：US6008138A
公开(公告)日：1999-12-28
申请号：US814760
申请日：1997-03-07
申请人： Franz Laermer , Andrea Schilp
发明人： Franz Laermer , Andrea Schilp
IPC分类号： B81B3/00 , H01L21/302
CPC分类号： B81B3/0051 , B81B2203/053 , B81C2201/0108
摘要： A process for structuring a movable element out of a membrane region. A sacrificial layer and a sealing layer are applied to the underside of the membrane region. Following removal of the sacrificial layer, sealing layer forms a limit stop and a seal for the movement of the movable element.
摘要翻译：一种用于从膜区域构造可移动元件的工艺。将牺牲层和密封层施加到膜区域的下侧。在去除牺牲层之后，密封层形成限位挡块和用于可移动元件运动的密封件。

18. 发明授权

US5804457A Method for manufacturing a force sensor 失效
标题翻译：力传感器的制造方法
公开(公告)号：US5804457A
公开(公告)日：1998-09-08
申请号：US659694
申请日：1996-06-05
申请人： Gerhard Benz , Franz Laermer , Andrea Schilp , Erich Zabler , Jurgen Schirmer , Werner Uhler
发明人： Gerhard Benz , Franz Laermer , Andrea Schilp , Erich Zabler , Jurgen Schirmer , Werner Uhler
IPC分类号： G01L1/10 , G01L9/00 , G01P15/08 , G01P15/097 , G01P15/10 , H01L29/84 , H01L21/77
CPC分类号： G01P15/097 , G01L9/0019 , G01L9/0042 , G01P15/0802 , Y10S148/159
摘要： In a force sensor, a resonator is mounted by means of a dielectric layer on a bending element. Deformation of the bending element changes the resonant frequency of the resonator.
摘要翻译：在力传感器中，通过介电层将谐振器安装在弯曲元件上。弯曲元件的变形会改变谐振器的谐振频率。

19. 发明授权

US5616523A Method of manufacturing sensor 失效
标题翻译：制造传感器的方法
公开(公告)号：US5616523A
公开(公告)日：1997-04-01
申请号：US627819
申请日：1996-04-02
申请人： Gerhard Benz , Jiri Marek , Frank Bantien , Horst Muenzel , Franz Laermer , Michael Offenberg , Andrea Schilp
发明人： Gerhard Benz , Jiri Marek , Frank Bantien , Horst Muenzel , Franz Laermer , Michael Offenberg , Andrea Schilp
IPC分类号： H01L21/306 , G01P15/08 , G01P15/125 , H01L29/84
CPC分类号： G01P15/125 , G01P15/0802 , G01P2015/0817 , G01P2015/0828
摘要： A method for manufacturing sensors from a multilayer plate with upper and lower monocrystalline silicon layers and an etching layer between them. The upper silicon layer is structured by the introduction of troughs therein extending down to the etching layer. Sensor structures, such as a bending beam that is used in an acceleration sensor, are created by etching the etching layer beneath a part of the silicon layer structured in this manner.
摘要翻译：一种从具有上，下单晶硅层的多层板和它们之间的蚀刻层制造传感器的方法。上硅层通过引入其中向下延伸到蚀刻层的槽而构成。传感器结构，例如用于加速度传感器中的弯曲梁，通过蚀刻以这种方式构造的硅层的一部分下方的蚀刻层来产生。

20. 发明授权

US07648611B2 Plasma etching equipment 失效
标题翻译：等离子体蚀刻设备
公开(公告)号：US07648611B2
公开(公告)日：2010-01-19
申请号：US10276438
申请日：2001-05-10
申请人： Franz Laermer , Andrea Schilp
发明人： Franz Laermer , Andrea Schilp
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/32357 , H01J37/321 , H01J37/32183 , H01L21/67069
摘要： A plasma etching system for etching, in particular anisotropic etching, of a substrate by using a plasma. The plasma etching system has a first plasma-generating device which is inductively coupled in particular and has a first arrangement for generating a first high-frequency electromagnetic alternating field, a first plasma-generating area for generating a first plasma and a first gas feed, as well as a first plasma-generating device downstream from a second plasma-generating device which is inductively coupled in particular and has a second arrangement for generating a second high-frequency electromagnetic alternating field, a second plasma-generating area for generating a second plasma and a second gas feed. The substrate to be etched is arranged in the first plasma-generating device. The second plasma is suppliable to the first plasma-generating device via the first gas feed at least partially as a first reactive gas.
摘要翻译：一种用于通过使用等离子体蚀刻，特别是各向异性蚀刻基板的等离子体蚀刻系统。等离子体蚀刻系统具有特别地感应耦合的第一等离子体产生装置，并且具有用于产生第一高频电磁交变场的第一装置，用于产生第一等离子体的第一等离子体产生区域和第一气体进料，以及第二等离子体产生装置的下游的第一等离子体产生装置，其特别地感应耦合并且具有用于产生第二高频电磁交变场的第二装置，用于产生第二等离子体产生区域的第二等离子体产生区域和第二气体进料。要蚀刻的衬底被布置在第一等离子体产生装置中。第二等离子体可以经由至少部分地作为第一反应气体的第一气体进料供应到第一等离子体产生装置。

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