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11. 发明授权

US08324063B2 Epitaxial film growing method, wafer supporting structure and susceptor 有权
标题翻译：外延膜生长方法，晶片支撑结构和基座
公开(公告)号：US08324063B2
公开(公告)日：2012-12-04
申请号：US12682850
申请日：2008-11-06
申请人： Takashi Fujikawa , Seiji Sugimoto
发明人： Takashi Fujikawa , Seiji Sugimoto
IPC分类号： H01L21/331
CPC分类号： H01L21/68735 , C23C16/4585 , C30B25/12
摘要： An annular step portion provided to a periphery of a wafer housing portion is provided to an area with which an area of 1 to 6 mm from a boundary line with a chamfered surface of a wafer rear surface toward a wafer center comes in contact. As a result, it is possible to produce an epitaxial wafer having no scratch in a boundary area between the rear surface and the chamfered surface, and to eliminate particles generated due to a scratch in a device process.
摘要翻译：设置在晶片收纳部周边的环状台阶部设置在与晶片背面朝向晶片中心的倒角表面的边界线1〜6mm的面积接触的区域。结果，可以在后表面和倒角表面之间的边界区域中制造没有划痕的外延晶片，并且消除在器件工艺中由划痕产生的微粒。

12. 发明授权

US07550183B2 Method for manufacturing conductive element substrate, conductive element substrate, method for manufacturing liquid crystal display, liquid crystal display and electronic information equipment 有权
标题翻译：制造导电元件基板，导电元件基板，制造液晶显示器的方法，液晶显示器和电子信息设备的方法
公开(公告)号：US07550183B2
公开(公告)日：2009-06-23
申请号：US11060677
申请日：2005-02-18
申请人： Kazuhiro Ishizuka , Takashi Fujikawa , Takehiko Sakai
发明人： Kazuhiro Ishizuka , Takashi Fujikawa , Takehiko Sakai
IPC分类号： G02F1/155 , G02F1/1343
CPC分类号： G02F1/133555 , C23F1/02 , C23F1/16 , C23F1/20 , C23F1/26 , C23F1/44 , G02F1/133553 , G02F1/13439 , G02F1/136227 , Y10S438/978 , Y10T428/10 , Y10T428/1055 , Y10T428/1064
摘要： A method for manufacturing a liquid crystal display which employs an active matrix substrate including a plurality of pixels arranged in matrix on a substrate and reflecting electrodes formed in the pixels, respectively. The method comprises (a) a laminated conductive film formation step of sequentially forming a conductive metal film and an amorphous transparent conductive film on a substrate to form a laminated conductive film and (b) a reflecting electrode formation step of patterning the laminated conductive film into a reflecting electrode, wherein the step (b) includes a first etching step of etching the conductive metal film and the amorphous transparent conductive film simultaneously and a second etching step of etching the amorphous transparent conductive film only.
摘要翻译：一种制造液晶显示器的方法，该液晶显示器采用包括矩阵排列在基板上的多个像素的有源矩阵基板和形成在像素中的反射电极。该方法包括：（a）在基板上依次形成导电金属膜和非晶透明导电膜以形成层叠导电膜的层叠导电膜形成步骤，以及（b）将叠层导电膜图案化的反射电极形成步骤反射电极，其中步骤（b）包括同时蚀刻导电金属膜和非晶体透明导电膜的第一蚀刻步骤和仅蚀刻非晶形透明导电膜的第二蚀刻步骤。

13. 发明申请

US20070209135A1 SCRUBBER BRUSH WITH SLEEVE AND BRUSH MANDREL FOR USE WITH THE SCRUBBER BRUSH 有权
标题翻译：带橡皮布的刷子和刷子与滚筒刷一起使用
公开(公告)号：US20070209135A1
公开(公告)日：2007-09-13
申请号：US11683116
申请日：2007-03-07
申请人： Hui Chen , Sheshraj L. Tulshibagwale , Hideshi Takahashi , Toshikazu Tomita , Takashi Fujikawa
发明人： Hui Chen , Sheshraj L. Tulshibagwale , Hideshi Takahashi , Toshikazu Tomita , Takashi Fujikawa
IPC分类号： A46B7/10
CPC分类号： H04L1/0045 , H01L21/67046 , H03M13/09 , H03M13/3738 , H03M13/3776 , H03M13/41 , H04L1/0059 , H04L1/20 , H04L1/208
摘要： In one aspect, a scrubber brush assembly is provided. The scrubber brush assembly includes (1) a cylindrical brush including exterior and interior surfaces; and (2) a sleeve having an exterior surface coupled to the interior surface of the scrubber brush and an interior surface. The exterior surface of the sleeve includes first coupling features adapted to prevent rotation of the sleeve relative to the brush. The scrubber brush assembly also includes a mandrel coupled to the interior surface of the sleeve. Numerous other aspects are provided.
摘要翻译：在一个方面，提供了洗涤器刷组件。洗涤器刷组件包括（1）包括外表面和内表面的圆柱刷; 和（2）具有连接到洗涤器刷的内表面的外表面和内表面的套管。套筒的外表面包括适于防止套筒相对于刷子旋转的第一联结特征。洗涤器刷组件还包括联接到套筒的内表面的心轴。提供了许多其他方面。

14. 发明申请

US20060054536A1 Hydrotreating catalyst for gas oil, process for producing the same, and method of hydrotreating gas oil 有权
标题翻译：瓦斯油加氢处理催化剂及其制备方法以及加氢处理瓦斯油的方法
公开(公告)号：US20060054536A1
公开(公告)日：2006-03-16
申请号：US10539400
申请日：2003-12-17
申请人： Takashi Fujikawa , Masahiro Kato , Nobumasa Nakajima , Minoru Hashimoto
发明人： Takashi Fujikawa , Masahiro Kato , Nobumasa Nakajima , Minoru Hashimoto
IPC分类号： C10G45/04 , B01J21/18 , B01J27/187
CPC分类号： C10G45/08 , B01J23/85 , B01J23/882 , B01J23/883 , B01J23/8885 , B01J31/04 , B01J31/2234 , B01J31/34 , B01J35/002 , B01J35/1019 , B01J35/1038 , B01J35/1042 , B01J35/1061 , B01J37/04 , B01J37/20 , B01J37/28 , B01J2231/641 , B01J2531/84 , B01J2531/845 , B01J2531/847 , C10G2300/1059 , C10G2300/4018
摘要： An object of the present invention is to provide a hydrotreating catalyst capable of being produced by a simple method and capable of realizing ultra-deep desulfurization of sulfur components in gas oil without requiring severer operating conditions as well as capable of reducing nitrogen components simultaneously, to provide a process for producing the catalyst, and to provide a process for desulfurizing gas oil using the catalyst. The invention relates to a catalyst containing on an inorganic oxide support 10 to 40% by weight of a metal in the Group 6 of the periodic table, 1 to 15% by weight of a metal in the Group 8 of the periodic table, 1.5 to 8% by weight of phosphorus, each in terms of an oxide amount based on the catalyst, and 2 to 14% by weight of carbon in terms of an element amount based on the catalyst, wherein the catalyst has a specific surface area of 150 to 300 m2/g, a pore volume of 0.3 to 0.6 ml/g, and an average pore diameter of 65 to 140 Å, and wherein the catalyst has a certain NO adsorption FT-IR spectrum after sulfidation treatment, a process for producing the catalyst, and a process for desulfurizing gas oil using the catalyst.
摘要翻译：本发明的目的是提供一种加氢处理催化剂，其能够通过简单的方法制造，并能够在不需要更严格的操作条件以及能够同时还原氮成分的情况下实现瓦斯油中的硫成分的超深度脱硫，提供催化剂的制造方法，提供使用该催化剂使瓦斯油脱硫的方法。

15. 发明授权

US08407846B2 Scrubber brush with sleeve and brush mandrel for use with the scrubber brush 有权
标题翻译：洗涤刷与套筒和刷心轴用于洗涤刷
公开(公告)号：US08407846B2
公开(公告)日：2013-04-02
申请号：US11683116
申请日：2007-03-07
申请人： Hui Chen , Sheshraj L. Tulshibagwale , Hideshi Takahashi , Toshikazu Tomita , Takashi Fujikawa
发明人： Hui Chen , Sheshraj L. Tulshibagwale , Hideshi Takahashi , Toshikazu Tomita , Takashi Fujikawa
IPC分类号： B05C1/00
CPC分类号： H04L1/0045 , H01L21/67046 , H03M13/09 , H03M13/3738 , H03M13/3776 , H03M13/41 , H04L1/0059 , H04L1/20 , H04L1/208
摘要： In one aspect, a scrubber brush assembly is provided. The scrubber brush assembly includes (1) a cylindrical brush including exterior and interior surfaces; and (2) a sleeve having an exterior surface coupled to the interior surface of the scrubber brush and an interior surface. The exterior surface of the sleeve includes first coupling features adapted to prevent rotation of the sleeve relative to the brush. The scrubber brush assembly also includes a mandrel coupled to the interior surface of the sleeve. Numerous other aspects are provided.
摘要翻译：在一个方面，提供了洗涤器刷组件。洗涤器刷组件包括（1）包括外表面和内表面的圆柱刷; 和（2）具有连接到洗涤器刷的内表面的外表面和内表面的套管。套筒的外表面包括适于防止套筒相对于刷子旋转的第一联结特征。洗涤器刷组件还包括联接到套筒的内表面的心轴。提供了许多其他方面。

16. 发明授权

US08252709B2 Catalyst for hydrodesulfurization/dewaxing of hydrocarbon oil, process for producing the same, and method of hydrotreating hydrocarbon oil with the catalyst 有权
标题翻译：用于烃油加氢脱硫/脱蜡的催化剂，其制备方法和用催化剂加氢处理烃油的方法
公开(公告)号：US08252709B2
公开(公告)日：2012-08-28
申请号：US12299329
申请日：2007-09-10
申请人： Yoshinori Kato , Hiroshi Kimura , Kazuyuki Kiriyama , Takashi Fujikawa
发明人： Yoshinori Kato , Hiroshi Kimura , Kazuyuki Kiriyama , Takashi Fujikawa
IPC分类号： B01J29/06 , B01J27/182 , C10G45/04 , C10G25/05
CPC分类号： B01J29/076 , B01J29/48 , B01J31/04 , B01J37/0203 , B01J37/08 , B01J2229/34 , B01J2229/37 , B01J2229/40 , C10G45/08 , C10G45/12 , C10G45/64 , C10G2300/202 , C10G2300/301 , C10G2300/4006 , C10G2300/70 , C10G2400/04
摘要： An object of the present invention is to provide a catalyst for hydrodesulfurization/dewaxing of a hydrocarbon oil, with which sulfur compounds in the hydrocarbon oil can be desulfurized to a high degree and which simultaneously is extremely effective in reducing the wax deposit content; a process for producing the catalyst; and a method of hydrotreatment with the catalyst.The invention relates to a catalyst for hydrodesulfurization/dewaxing of a hydrocarbon oil, comprising a support comprising an inorganic oxide containing at least one crystalline aluminosilicate having a one- or two-dimensional pore path system and, having provided thereon, 10 to 35% by mass of a metal in Group 6 of the Periodic Table, 1 to 10% by mass of a metal in Group 8 of the Periodic Table, and 1.5 to 6% by mass of phosphorus in terms of oxide amount on the basis of the catalyst and further containing 2 to 14% by mass of carbon derived from an organic acid in terms of element amount on the basis of the catalyst, wherein the content of the crystalline aluminosilicate having a one-or two-dimensional pore path system in the support is 3 to 25% by mass on the basis of the support; a process for producing the catalyst; and a method of hydrotreatment with the catalyst.
摘要翻译：本发明的目的在于提供一种用于烃油加氢脱硫/脱蜡的催化剂，其中烃油中的硫化合物可以高度脱硫，同时在降低蜡沉积物含量方面非常有效; 催化剂的制造方法; 和用催化剂进行加氢处理的方法。本发明涉及一种用于烃油加氢脱硫/脱蜡的催化剂，其包括含有至少一种具有一维或二维孔道系统的至少一种结晶硅铝酸盐的无机氧化物的载体，并且其上提供10-35％周期表第6族中的金属质量，周期表第8族中的金属为1〜10质量％，以催化剂为基准的氧化物量为1.5〜6质量％，以及进一步含有2〜14质量％的以有机酸为基准的碳，基于催化剂的元素量，其中载体中具有一维或二维孔径系统的结晶硅铝酸盐的含量为3 至25质量％; 催化剂的制造方法; 和用催化剂进行加氢处理的方法。

17. 发明申请

US20050186359A1 Method for manufacturing conductive element substrate, conductive element substrate, method for manufacturing liquid crystal display, liquid crystal display and electronic information equipment 有权
标题翻译：制造导电元件基板，导电元件基板，制造液晶显示器的方法，液晶显示器和电子信息设备的方法
公开(公告)号：US20050186359A1
公开(公告)日：2005-08-25
申请号：US11060677
申请日：2005-02-18
申请人： Kazuhiro Ishizuka , Takashi Fujikawa , Takehiko Sakai
发明人： Kazuhiro Ishizuka , Takashi Fujikawa , Takehiko Sakai
IPC分类号： C09K19/00 , C23F1/00 , C23F1/02 , C23F1/16 , C23F1/20 , C23F1/26 , C23F1/44 , G02F1/133 , G02F1/1335 , G02F1/1343 , G02F1/1362 , G09F9/00 , G09F9/30
CPC分类号： G02F1/133555 , C23F1/02 , C23F1/16 , C23F1/20 , C23F1/26 , C23F1/44 , G02F1/133553 , G02F1/13439 , G02F1/136227 , Y10S438/978 , Y10T428/10 , Y10T428/1055 , Y10T428/1064
摘要： A method for manufacturing a liquid crystal display which employs an active matrix substrate including a plurality of pixels arranged in matrix on a substrate and reflecting electrodes formed in the pixels, respectively. The method comprises (a) a laminated conductive film formation step of sequentially forming a conductive metal film and an amorphous transparent conductive film on a substrate to form a laminated conductive film and (b) a reflecting electrode formation step of patterning the laminated conductive film into a reflecting electrode, wherein the step (b) includes a first etching step of etching the conductive metal film and the amorphous transparent conductive film simultaneously and a second etching step of etching the amorphous transparent conductive film only.
摘要翻译：一种制造液晶显示器的方法，该液晶显示器采用包括矩阵排列在基板上的多个像素的有源矩阵基板和形成在像素中的反射电极。该方法包括：（a）在基板上依次形成导电金属膜和非晶透明导电膜以形成层叠导电膜的层叠导电膜形成步骤，以及（b）将叠层导电膜图案化的反射电极形成步骤反射电极，其中步骤（b）包括同时蚀刻导电金属膜和非晶体透明导电膜的第一蚀刻步骤和仅蚀刻非晶形透明导电膜的第二蚀刻步骤。

18. 发明授权

US06460970B1 Method of manufacturing nozzle plate for ink jet recording head, ink jet recording head comprising such nozzle plate, and ink jet recording apparatus comprising such head 失效
标题翻译：制造喷墨记录头喷嘴板的方法，包括这种喷嘴板的喷墨记录头，以及包括这种喷头的喷墨记录装置
公开(公告)号：US06460970B1
公开(公告)日：2002-10-08
申请号：US08668478
申请日：1996-06-25
申请人： Norio Ohkuma , Hirokazu Komuro , Takashi Fujikawa , Ken Tsuchii , Hideto Yokoi , Shuichi Murakami
发明人： Norio Ohkuma , Hirokazu Komuro , Takashi Fujikawa , Ken Tsuchii , Hideto Yokoi , Shuichi Murakami
IPC分类号： B41J214
CPC分类号： B41J2/1606 , B41J2/162 , B41J2/1625 , B41J2/1631
摘要： The method of the present invention of manufacturing a nozzle plate for an ink jet recording head comprises a first step of forming a layer of a resin comprising a benzene ring on a metal substrate, a second step of patterning the layer of the resin by means of excimer laser and partially exposing the metal substrate, a third step of forming a metal layer having a thickness smaller than that of the resin layer on the exposed surface of the metal substrate by electroforming, and a fourth step of separating the metal layer from the metal substrate and the resin layer.
摘要翻译：制造喷墨记录头用喷嘴板的本发明的方法包括在金属基板上形成包含苯环的树脂层的第一工序，第二工序，通过以下步骤对树脂层进行图案化：准分子激光器和部分地暴露金属基板的第三步骤，通过电铸在金属基板的暴露表面上形成厚度小于树脂层的厚度的金属层的第三步骤，以及将金属层与金属分离的第四步骤基板和树脂层。

19. 发明授权

US06277501B1 Silicon epitaxial wafer and method for manufacturing the same 有权
标题翻译：硅外延晶片及其制造方法
公开(公告)号：US06277501B1
公开(公告)日：2001-08-21
申请号：US09230684
申请日：1999-01-29
申请人： Takashi Fujikawa
发明人： Takashi Fujikawa
IPC分类号： B32B1500
CPC分类号： C30B29/06 , C30B15/00 , H01L21/3225 , Y10S428/93 , Y10S438/959 , Y10S438/974 , Y10T156/10 , Y10T428/12674 , Y10T428/31663
摘要： The present invention has as an objective providing a silicon epi-wafer, and a manufacturing method therefor, which simplifies processing as much as possible in an attempt to lower the cost of an epi-wafer, and which is capable of manifesting a sufficient IG effect even in low-temperature device fabrication processing of under 1080° C. in an epi-wafer, and furthermore, in device processing, which enhances gettering capabilities for a variety of impurities in wafer device processing, without performing, following wafer slicing, any process from which an EG effect can be anticipated. As for the silicon single crystal, which is grown via the CZ method so as to make the oxygen concentration relatively high, and to intentionally make the carbon concentration high, outstanding gettering capabilities are manifested in the wafer itself, without performing EG processing. And, in accordance with suitably controlling oxygen concentration and carbon concentration while pulling a single crystal, and performing short-duration annealing at a low temperature after silicon wafer slicing, [the present invention], in addition to furnishing IG capabilities, is capable of reducing the number of processes by not performing any of the various complex EG processes performed following conventional silicon wafer formation, strives to lower costs, makes possible the granting of IG capabilities, which are generated in low-temperature device processing that uses an epi-wafer, and, since EG is not needed even when two-side mirror finishing is required to realize high-precision planarity, makes possible the manufacture of a substrate capable of measures designed to increase precision.
摘要翻译：本发明的目的是提供一种硅外延晶片及其制造方法，其尽可能地简化了处理，以降低外延片的成本，并且能够表现出足够的IG效应即使在外延晶片中低于1080℃的低温器件制造处理中，此外，在器件处理中，其提高晶片器件处理中的各种杂质的吸杂能力，而不执行晶片切片之后的任何工艺从中可以预见到EG效应。对于通过CZ方法生长以使氧浓度相对较高的硅单晶，并且有意地使碳浓度高，在晶片本身上表现出优异的吸气能力，而不进行EG处理。并且，根据适当地控制氧浓度和碳浓度同时牵引单晶，并且在硅晶片切片之后在低温下进行短时间退火，[本发明]除了提供IG能力之外，还能够减少通过不执行常规硅晶片形成之后执行的各种复杂EG工艺中的任何一个处理的次数，力求降低成本，使得可以授予在使用外延晶片的低温器件处理中产生的IG能力，并且由于即使需要双面镜面精加工来实现高精度平面化也不需要EG，因此可以制造能够提高精度的措施。

20. 发明授权

US06091470A Active matrix substrate with concave portion in region at edge of pixel electrode and method for fabricating the same using ashing treatment 失效
标题翻译：在像素电极的边缘处的区域中具有凹部的有源矩阵基板和使用灰化处理的其制造方法
公开(公告)号：US06091470A
公开(公告)日：2000-07-18
申请号：US926574
申请日：1997-09-04
申请人： Takashi Fujikawa , Yoshiharu Kataoka
发明人： Takashi Fujikawa , Yoshiharu Kataoka
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , G02F1/1333
CPC分类号： G02F1/136227
摘要： An active-matrix substrate includes: two kinds of lines arranged in a matrix on an insulating plate; switching elements each provided in the vicinity of an intersection of the two kinds of lines; an insulating film for flattening, covering an entire surface of the insulating plate so as to flatten the uneven surface of the insulating plate due to the presence of the lines and the switching elements; and pixel electrodes provided in a matrix on the insulating film for flattening. A concave portion for preventing a short-circuit from occurring between the pixel electrodes during a production process is formed in a region of the insulating film for flattening which corresponds to a gap between pixel electrodes which are adjacent to each other. Also, a method for fabricating the active-matrix substrate includes the step of forming a concave portion for preventing a short-circuit from occurring between the pixel electrodes in an exposed portion of the insulating film for flattening at a gap between the pixel electrodes adjacent to each other, forming the concave portion by an ashing treatment after forming the pixel electrodes in a matrix.
摘要翻译：有源矩阵基板包括：在绝缘板上以矩阵布置的两种线; 各个设置在两条线路的交点附近的开关元件; 用于平坦化的绝缘膜，覆盖绝缘板的整个表面，以便由于线和开关元件的存在而使绝缘板的不平坦表面变平; 以及设置在绝缘膜上的矩阵中的像素电极用于平坦化。在用于平坦化的绝缘膜的与彼此相邻的像素电极之间的间隙对应的区域中形成用于防止在制造工艺期间在像素电极之间发生短路的凹部。此外，制造有源矩阵基板的方法包括形成用于防止在绝缘膜的暴露部分中的像素电极之间发生短路的凹部的步骤，用于在邻近的像素电极之间的间隙处变平彼此形成像素电极之后通过灰化处理形成凹部。

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